페이지 12 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

SGW15N60FKSA1

Infineon Technologies

IGBT 600V 31A 139W TO247-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 31A
Current - Collector Pulsed (Icm): 62A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Power - Max: 139W
Switching Energy: 570µJ
Input Type: Standard
Gate Charge: 76nC
Td (on/off) @ 25°C: 32ns/234ns
Test Condition: 400V, 15A, 21 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고6,064

600V

31A

62A

2.4V @ 15V, 15A

139W

570µJ

Standard

76nC

32ns/234ns

400V, 15A, 21 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

RJP60D0DPM-00#T1

Renesas Electronics America

IGBT 600V 45A 40W TO-3PFM

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Power - Max: 40W
Switching Energy: -
Input Type: Standard
Gate Charge: 45nC
Td (on/off) @ 25°C: 35ns/90ns
Test Condition: 300V, 22A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PFM, SC-93-3
Supplier Device Package: TO-3PFM

패키지: TO-3PFM, SC-93-3

재고3,776

600V

45A

-

2.2V @ 15V, 22A

40W

-

Standard

45nC

35ns/90ns

300V, 22A, 5 Ohm, 15V

-

150°C (TJ)

Through Hole

TO-3PFM, SC-93-3

TO-3PFM

RJH60D1DPP-M0#T2

Renesas Electronics America

IGBT 600V 20A 20.8W TO220FL

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Power - Max: 30W
Switching Energy: 100µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 13nC
Td (on/off) @ 25°C: 30ns/42ns
Test Condition: 300V, 10A, 5 Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FL

패키지: TO-220-3 Full Pack

재고43,080

600V

20A

-

2.5V @ 15V, 10A

30W

100µJ (on), 130µJ (off)

Standard

13nC

30ns/42ns

300V, 10A, 5 Ohm, 15V

70ns

150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220FL

IXGH25N100U1

IXYS

IGBT 1000V 50A 200W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A
Power - Max: 200W
Switching Energy: 5mJ (off)
Input Type: Standard
Gate Charge: 130nC
Td (on/off) @ 25°C: 100ns/500ns
Test Condition: 800V, 25A, 33 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고6,096

1000V

50A

100A

3.5V @ 15V, 25A

200W

5mJ (off)

Standard

130nC

100ns/500ns

800V, 25A, 33 Ohm, 15V

50ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

IXGT40N60B2

IXYS

IGBT 600V 75A 300W TO268

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 300W
Switching Energy: 400µJ (off)
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 18ns/130ns
Test Condition: 400V, 30A, 3.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고2,496

600V

75A

200A

1.7V @ 15V, 30A

300W

400µJ (off)

Standard

100nC

18ns/130ns

400V, 30A, 3.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

IKY40N120CH3XKSA1

Infineon Technologies

IGBT PRODUCTS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,632

-

IGW100N60H3FKSA1

Infineon Technologies

IGBT 600V TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Power - Max: 714W
Switching Energy: 3.7mJ (on), 1.9mJ (off)
Input Type: Standard
Gate Charge: 625nC
Td (on/off) @ 25°C: 30ns/265ns
Test Condition: 400V, 100A, 3.5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고5,984

600V

140A

300A

2.3V @ 15V, 100A

714W

3.7mJ (on), 1.9mJ (off)

Standard

625nC

30ns/265ns

400V, 100A, 3.5 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IXGF25N300

IXYS

IGBT 3000V 27A 114W I4-PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 27A
Current - Collector Pulsed (Icm): 140A
Vce(on) (Max) @ Vge, Ic: 5.5V @ 15V, 75A
Power - Max: 114W
Switching Energy: -
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5 (3 leads)
Supplier Device Package: ISOPLUS i4-PAC?

패키지: i4-Pac?-5 (3 leads)

재고4,112

3000V

27A

140A

5.5V @ 15V, 75A

114W

-

Standard

75nC

-

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5 (3 leads)

ISOPLUS i4-PAC?

MMIX1X200N60B3

IXYS

IGBT 600V 223A 625W SMPD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 223A
Current - Collector Pulsed (Icm): 1000A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Power - Max: 625W
Switching Energy: 2.85mJ (on), 2.9mJ (off)
Input Type: Standard
Gate Charge: 315nC
Td (on/off) @ 25°C: 48ns/160ns
Test Condition: 360V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-PowerSMD, 21 Leads
Supplier Device Package: SMPD

패키지: 24-PowerSMD, 21 Leads

재고3,984

600V

223A

1000A

1.7V @ 15V, 100A

625W

2.85mJ (on), 2.9mJ (off)

Standard

315nC

48ns/160ns

360V, 100A, 1 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Surface Mount

24-PowerSMD, 21 Leads

SMPD

IXGK35N120B

IXYS

IGBT 1200V 70A 350W TO264AA

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 140A
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
Power - Max: 350W
Switching Energy: 3.8mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 50ns/180ns
Test Condition: 960V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXGK)

패키지: TO-264-3, TO-264AA

재고3,584

1200V

70A

140A

3.3V @ 15V, 35A

350W

3.8mJ (off)

Standard

170nC

50ns/180ns

960V, 35A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264 (IXGK)

IXGQ200N30PB

IXYS

IGBT 300V 400A TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 400A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고13,464

300V

400A

-

Standard

-

Through Hole

TO-3P-3, SC-65-3

TO-3P

STGP30H60DFB

STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, HB

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 260W
Switching Energy: 383µJ (on), 293µJ (off)
Input Type: Standard
Gate Charge: 149nC
Td (on/off) @ 25°C: 37ns/146ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 53ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: TO-220-3

재고22,224

600V

60A

120A

2V @ 15V, 30A

260W

383µJ (on), 293µJ (off)

Standard

149nC

37ns/146ns

400V, 30A, 10 Ohm, 15V

53ns

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220

STGWA40M120DF3

STMicroelectronics

IGBT 1200V 80A 468W TO-247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 468W
Switching Energy: 1.03mJ (on), 480µJ (off)
Input Type: Standard
Gate Charge: 125nC
Td (on/off) @ 25°C: 35ns/140ns
Test Condition: 600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 355ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고8,100

1200V

80A

160A

2.3V @ 15V, 40A

468W

1.03mJ (on), 480µJ (off)

Standard

125nC

35ns/140ns

600V, 40A, 10 Ohm, 15V

355ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

FGH50T65UPD

Fairchild/ON Semiconductor

IGBT 650V 100A 340W TO-247AB

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Power - Max: 340W
Switching Energy: 2.7mJ (on), 740µJ (off)
Input Type: Standard
Gate Charge: 230nC
Td (on/off) @ 25°C: 32ns/160ns
Test Condition: 400V, 50A, 6 Ohm, 15V
Reverse Recovery Time (trr): 53ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고8,052

650V

100A

150A

2.3V @ 15V, 50A

340W

2.7mJ (on), 740µJ (off)

Standard

230nC

32ns/160ns

400V, 50A, 6 Ohm, 15V

53ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

IRGP4650D-EPBF

Infineon Technologies

IGBT 600V 76A 268W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 76A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
Power - Max: 268W
Switching Energy: 390µJ (on), 632µJ (off)
Input Type: Standard
Gate Charge: 104nC
Td (on/off) @ 25°C: 46ns/105ns
Test Condition: 400V, 35A, 10 Ohm, 15V
Reverse Recovery Time (trr): 120ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

패키지: TO-247-3

재고4,592

600V

76A

105A

1.9V @ 15V, 35A

268W

390µJ (on), 632µJ (off)

Standard

104nC

46ns/105ns

400V, 35A, 10 Ohm, 15V

120ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AD

IRG4PH50SPBF

Infineon Technologies

IGBT 1200V 57A 200W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 57A
Current - Collector Pulsed (Icm): 114A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
Power - Max: 200W
Switching Energy: 1.8mJ (on), 19.6mJ (off)
Input Type: Standard
Gate Charge: 167nC
Td (on/off) @ 25°C: 32ns/845ns
Test Condition: 960V, 33A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고51,264

1200V

57A

114A

1.7V @ 15V, 33A

200W

1.8mJ (on), 19.6mJ (off)

Standard

167nC

32ns/845ns

960V, 33A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

LGB8202ARI

Littelfuse Inc.

IGBT 440V 20A 150W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IRGC4066B

Infineon Technologies

IGBT CHIP

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 150 nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

75 A

-

2.1V @ 15V, 75A

-

Standard

150 nC

50ns/200ns

400V, 75A, 10Ohm, 15V

-

-55°C ~ 175°C (TJ)

Surface Mount

Die

IXGP48N60B3

IXYS

DISC IGBT PT-MID FREQUENCY TO-22

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Current - Collector Pulsed (Icm): 280 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Power - Max: 300 W
Switching Energy: 840µJ (on), 660µJ (off)
Input Type: Standard
Gate Charge: 115 nC
Td (on/off) @ 25°C: 22ns/130ns
Test Condition: 480V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr): 25 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

Request a Quote

600 V

48 A

280 A

1.8V @ 15V, 32A

300 W

840µJ (on), 660µJ (off)

Standard

115 nC

22ns/130ns

480V, 30A, 5Ohm, 15V

25 ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

IXXH40N65C4D1

IXYS

IGBT PT 650V 110A TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 110 A
Current - Collector Pulsed (Icm): 215 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 455 W
Switching Energy: 1.6mJ (on), 420µJ (off)
Input Type: Standard
Gate Charge: 68 nC
Td (on/off) @ 25°C: 20ns/100ns
Test Condition: 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr): 62 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

패키지: -

Request a Quote

650 V

110 A

215 A

2.3V @ 15V, 40A

455 W

1.6mJ (on), 420µJ (off)

Standard

68 nC

20ns/100ns

400V, 40A, 5Ohm, 15V

62 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247 (IXTH)

SIGC18T60SNCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 36ns/250ns
Test Condition: 400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

20 A

60 A

2.5V @ 15V, 20A

-

Standard

-

36ns/250ns

400V, 20A, 16Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

FGI3236-F085

Fairchild Semiconductor

IGBT, 44A, 350V, N-CHANNEL, TO-2

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 360 V
Current - Collector (Ic) (Max): 44 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.4V @ 4V, 6A
Power - Max: 187 W
Switching Energy: -
Input Type: Logic
Gate Charge: 20 nC
Td (on/off) @ 25°C: -/5.4µs
Test Condition: 300V, 1kOhm, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package: TO-262 (I2PAK)

패키지: -

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360 V

44 A

-

1.4V @ 4V, 6A

187 W

-

Logic

20 nC

-/5.4µs

300V, 1kOhm, 5V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-262-3 Long Leads, I2PAK, TO-262AA

TO-262 (I2PAK)

IXXH140N65B4

IXYS

DISC IGBT XPT-GENX4 TO-247AD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 340 A
Current - Collector Pulsed (Icm): 840 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Power - Max: 1200 W
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Input Type: Standard
Gate Charge: 250 nC
Td (on/off) @ 25°C: 54ns/270ns
Test Condition: 400V, 100A, 4.7Ohm, 15V
Reverse Recovery Time (trr): 105 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)

패키지: -

Request a Quote

650 V

340 A

840 A

1.9V @ 15V, 120A

1200 W

5.75mJ (on), 2.67mJ (off)

Standard

250 nC

54ns/270ns

400V, 100A, 4.7Ohm, 15V

105 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247 (IXTH)

IGTP10N40

Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: -

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400 V

10 A

-

Standard

-

Through Hole

TO-220-3

TO-220AB

IKFW40N65ES5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 60A HSIP247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 106 W
Switching Energy: 560µJ (on), 320µJ (off)
Input Type: Standard
Gate Charge: 70 nC
Td (on/off) @ 25°C: 17ns/124ns
Test Condition: 400V, 30A, 13Ohm, 15V
Reverse Recovery Time (trr): 75 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-HSIP247-3-2

패키지: -

재고147

650 V

60 A

120 A

1.7V @ 15V, 30A

106 W

560µJ (on), 320µJ (off)

Standard

70 nC

17ns/124ns

400V, 30A, 13Ohm, 15V

75 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-HSIP247-3-2

IKZA40N120CH7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 95A TO247-4

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 95 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Power - Max: 330 W
Switching Energy: 970µJ (on), 1.01mJ (off)
Input Type: Standard
Gate Charge: 290 nC
Td (on/off) @ 25°C: 34ns/360ns
Test Condition: -
Reverse Recovery Time (trr): 90 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4-U02

패키지: -

재고399

1200 V

95 A

160 A

2.15V @ 15V, 40A

330 W

970µJ (on), 1.01mJ (off)

Standard

290 nC

34ns/360ns

-

90 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-4

PG-TO247-4-U02

STGD25N40LZAG

STMicroelectronics

POWER TRANSISTORS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 435 V
Current - Collector (Ic) (Max): 25 A
Current - Collector Pulsed (Icm): 50 A
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Power - Max: 125 W
Switching Energy: -
Input Type: Logic
Gate Charge: 26 nC
Td (on/off) @ 25°C: 1.1µs/4.6µs
Test Condition: 300V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)

패키지: -

재고6,351

435 V

25 A

50 A

1.25V @ 4V, 6A

125 W

-

Logic

26 nC

1.1µs/4.6µs

300V, 10A, 1kOhm, 5V

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

SIGC18T60NCX1SA6

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 20A, 13Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

20 A

60 A

2.5V @ 15V, 20A

-

Standard

-

21ns/110ns

300V, 20A, 13Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SGW15N60FKSA1	Infineon Technologies	IGBT 600V 31A 139W TO247-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 62A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 139W Switching Energy: 570µJ Input Type: Standard Gate Charge: 76nC Td (on/off) @ 25°C: 32ns/234ns Test Condition: 400V, 15A, 21 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고6,064	600V	31A	62A	2.4V @ 15V, 15A	139W	570µJ	Standard	76nC	32ns/234ns	400V, 15A, 21 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
RJP60D0DPM-00#T1	Renesas Electronics America	IGBT 600V 45A 40W TO-3PFM IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Power - Max: 40W Switching Energy: - Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 35ns/90ns Test Condition: 300V, 22A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	패키지: TO-3PFM, SC-93-3	재고3,776	600V	45A	-	2.2V @ 15V, 22A	40W	-	Standard	45nC	35ns/90ns	300V, 22A, 5 Ohm, 15V	-	150°C (TJ)	Through Hole	TO-3PFM, SC-93-3	TO-3PFM
RJH60D1DPP-M0#T2	Renesas Electronics America	IGBT 600V 20A 20.8W TO220FL IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: 30W Switching Energy: 100µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 30ns/42ns Test Condition: 300V, 10A, 5 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FL	패키지: TO-220-3 Full Pack	재고43,080	600V	20A	-	2.5V @ 15V, 10A	30W	100µJ (on), 130µJ (off)	Standard	13nC	30ns/42ns	300V, 10A, 5 Ohm, 15V	70ns	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220FL
IXGH25N100U1	IXYS	IGBT 1000V 50A 200W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 25A Power - Max: 200W Switching Energy: 5mJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 100ns/500ns Test Condition: 800V, 25A, 33 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고6,096	1000V	50A	100A	3.5V @ 15V, 25A	200W	5mJ (off)	Standard	130nC	100ns/500ns	800V, 25A, 33 Ohm, 15V	50ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
IXGT40N60B2	IXYS	IGBT 600V 75A 300W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 300W Switching Energy: 400µJ (off) Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 18ns/130ns Test Condition: 400V, 30A, 3.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고2,496	600V	75A	200A	1.7V @ 15V, 30A	300W	400µJ (off)	Standard	100nC	18ns/130ns	400V, 30A, 3.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IKY40N120CH3XKSA1	Infineon Technologies	IGBT PRODUCTS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,632	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGW100N60H3FKSA1	Infineon Technologies	IGBT 600V TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A Power - Max: 714W Switching Energy: 3.7mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 625nC Td (on/off) @ 25°C: 30ns/265ns Test Condition: 400V, 100A, 3.5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고5,984	600V	140A	300A	2.3V @ 15V, 100A	714W	3.7mJ (on), 1.9mJ (off)	Standard	625nC	30ns/265ns	400V, 100A, 3.5 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IXGF25N300	IXYS	IGBT 3000V 27A 114W I4-PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3000V Current - Collector (Ic) (Max): 27A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 5.5V @ 15V, 75A Power - Max: 114W Switching Energy: - Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 (3 leads) Supplier Device Package: ISOPLUS i4-PAC?	패키지: i4-Pac?-5 (3 leads)	재고4,112	3000V	27A	140A	5.5V @ 15V, 75A	114W	-	Standard	75nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5 (3 leads)	ISOPLUS i4-PAC?
MMIX1X200N60B3	IXYS	IGBT 600V 223A 625W SMPD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 223A Current - Collector Pulsed (Icm): 1000A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Power - Max: 625W Switching Energy: 2.85mJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 315nC Td (on/off) @ 25°C: 48ns/160ns Test Condition: 360V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-PowerSMD, 21 Leads Supplier Device Package: SMPD	패키지: 24-PowerSMD, 21 Leads	재고3,984	600V	223A	1000A	1.7V @ 15V, 100A	625W	2.85mJ (on), 2.9mJ (off)	Standard	315nC	48ns/160ns	360V, 100A, 1 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Surface Mount	24-PowerSMD, 21 Leads	SMPD
IXGK35N120B	IXYS	IGBT 1200V 70A 350W TO264AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A Power - Max: 350W Switching Energy: 3.8mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 50ns/180ns Test Condition: 960V, 35A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXGK)	패키지: TO-264-3, TO-264AA	재고3,584	1200V	70A	140A	3.3V @ 15V, 35A	350W	3.8mJ (off)	Standard	170nC	50ns/180ns	960V, 35A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXGK)
IXGQ200N30PB	IXYS	IGBT 300V 400A TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 400A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고13,464	300V	400A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-3P-3, SC-65-3	TO-3P
STGP30H60DFB	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT, HB IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 260W Switching Energy: 383µJ (on), 293µJ (off) Input Type: Standard Gate Charge: 149nC Td (on/off) @ 25°C: 37ns/146ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 53ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: TO-220-3	재고22,224	600V	60A	120A	2V @ 15V, 30A	260W	383µJ (on), 293µJ (off)	Standard	149nC	37ns/146ns	400V, 30A, 10 Ohm, 15V	53ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
STGWA40M120DF3	STMicroelectronics	IGBT 1200V 80A 468W TO-247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 468W Switching Energy: 1.03mJ (on), 480µJ (off) Input Type: Standard Gate Charge: 125nC Td (on/off) @ 25°C: 35ns/140ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 355ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고8,100	1200V	80A	160A	2.3V @ 15V, 40A	468W	1.03mJ (on), 480µJ (off)	Standard	125nC	35ns/140ns	600V, 40A, 10 Ohm, 15V	355ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
FGH50T65UPD	Fairchild/ON Semiconductor	IGBT 650V 100A 340W TO-247AB IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Power - Max: 340W Switching Energy: 2.7mJ (on), 740µJ (off) Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 32ns/160ns Test Condition: 400V, 50A, 6 Ohm, 15V Reverse Recovery Time (trr): 53ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고8,052	650V	100A	150A	2.3V @ 15V, 50A	340W	2.7mJ (on), 740µJ (off)	Standard	230nC	32ns/160ns	400V, 50A, 6 Ohm, 15V	53ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
IRGP4650D-EPBF	Infineon Technologies	IGBT 600V 76A 268W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 76A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A Power - Max: 268W Switching Energy: 390µJ (on), 632µJ (off) Input Type: Standard Gate Charge: 104nC Td (on/off) @ 25°C: 46ns/105ns Test Condition: 400V, 35A, 10 Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	패키지: TO-247-3	재고4,592	600V	76A	105A	1.9V @ 15V, 35A	268W	390µJ (on), 632µJ (off)	Standard	104nC	46ns/105ns	400V, 35A, 10 Ohm, 15V	120ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
IRG4PH50SPBF	Infineon Technologies	IGBT 1200V 57A 200W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 57A Current - Collector Pulsed (Icm): 114A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A Power - Max: 200W Switching Energy: 1.8mJ (on), 19.6mJ (off) Input Type: Standard Gate Charge: 167nC Td (on/off) @ 25°C: 32ns/845ns Test Condition: 960V, 33A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고51,264	1200V	57A	114A	1.7V @ 15V, 33A	200W	1.8mJ (on), 19.6mJ (off)	Standard	167nC	32ns/845ns	960V, 33A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
LGB8202ARI	Littelfuse Inc.	IGBT 440V 20A 150W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRGC4066B	Infineon Technologies	IGBT CHIP IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 150 nC Td (on/off) @ 25°C: 50ns/200ns Test Condition: 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	75 A	-	2.1V @ 15V, 75A	-	-	Standard	150 nC	50ns/200ns	400V, 75A, 10Ohm, 15V	-	-55°C ~ 175°C (TJ)	Surface Mount	Die	Die
IXGP48N60B3	IXYS	DISC IGBT PT-MID FREQUENCY TO-22 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 48 A Current - Collector Pulsed (Icm): 280 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Power - Max: 300 W Switching Energy: 840µJ (on), 660µJ (off) Input Type: Standard Gate Charge: 115 nC Td (on/off) @ 25°C: 22ns/130ns Test Condition: 480V, 30A, 5Ohm, 15V Reverse Recovery Time (trr): 25 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote	600 V	48 A	280 A	1.8V @ 15V, 32A	300 W	840µJ (on), 660µJ (off)	Standard	115 nC	22ns/130ns	480V, 30A, 5Ohm, 15V	25 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
IXXH40N65C4D1	IXYS	IGBT PT 650V 110A TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 110 A Current - Collector Pulsed (Icm): 215 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 455 W Switching Energy: 1.6mJ (on), 420µJ (off) Input Type: Standard Gate Charge: 68 nC Td (on/off) @ 25°C: 20ns/100ns Test Condition: 400V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 62 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	패키지: -	Request a Quote	650 V	110 A	215 A	2.3V @ 15V, 40A	455 W	1.6mJ (on), 420µJ (off)	Standard	68 nC	20ns/100ns	400V, 40A, 5Ohm, 15V	62 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)
SIGC18T60SNCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 36ns/250ns Test Condition: 400V, 20A, 16Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	20 A	60 A	2.5V @ 15V, 20A	-	-	Standard	-	36ns/250ns	400V, 20A, 16Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
FGI3236-F085	Fairchild Semiconductor	IGBT, 44A, 350V, N-CHANNEL, TO-2 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 360 V Current - Collector (Ic) (Max): 44 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.4V @ 4V, 6A Power - Max: 187 W Switching Energy: - Input Type: Logic Gate Charge: 20 nC Td (on/off) @ 25°C: -/5.4µs Test Condition: 300V, 1kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262 (I2PAK)	패키지: -	Request a Quote	360 V	44 A	-	1.4V @ 4V, 6A	187 W	-	Logic	20 nC	-/5.4µs	300V, 1kOhm, 5V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262 (I2PAK)
IXXH140N65B4	IXYS	DISC IGBT XPT-GENX4 TO-247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 340 A Current - Collector Pulsed (Icm): 840 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A Power - Max: 1200 W Switching Energy: 5.75mJ (on), 2.67mJ (off) Input Type: Standard Gate Charge: 250 nC Td (on/off) @ 25°C: 54ns/270ns Test Condition: 400V, 100A, 4.7Ohm, 15V Reverse Recovery Time (trr): 105 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH)	패키지: -	Request a Quote	650 V	340 A	840 A	1.9V @ 15V, 120A	1200 W	5.75mJ (on), 2.67mJ (off)	Standard	250 nC	54ns/270ns	400V, 100A, 4.7Ohm, 15V	105 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)
IGTP10N40	Harris Corporation	N CHANNEL IGBT FOR SWITCHING APP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	Request a Quote	400 V	10 A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-220-3	TO-220AB
IKFW40N65ES5XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 60A HSIP247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 106 W Switching Energy: 560µJ (on), 320µJ (off) Input Type: Standard Gate Charge: 70 nC Td (on/off) @ 25°C: 17ns/124ns Test Condition: 400V, 30A, 13Ohm, 15V Reverse Recovery Time (trr): 75 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-HSIP247-3-2	패키지: -	재고147	650 V	60 A	120 A	1.7V @ 15V, 30A	106 W	560µJ (on), 320µJ (off)	Standard	70 nC	17ns/124ns	400V, 30A, 13Ohm, 15V	75 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-HSIP247-3-2
IKZA40N120CH7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 95A TO247-4 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 95 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Power - Max: 330 W Switching Energy: 970µJ (on), 1.01mJ (off) Input Type: Standard Gate Charge: 290 nC Td (on/off) @ 25°C: 34ns/360ns Test Condition: - Reverse Recovery Time (trr): 90 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: PG-TO247-4-U02	패키지: -	재고399	1200 V	95 A	160 A	2.15V @ 15V, 40A	330 W	970µJ (on), 1.01mJ (off)	Standard	290 nC	34ns/360ns	-	90 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4	PG-TO247-4-U02
STGD25N40LZAG	STMicroelectronics	POWER TRANSISTORS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 435 V Current - Collector (Ic) (Max): 25 A Current - Collector Pulsed (Icm): 50 A Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Power - Max: 125 W Switching Energy: - Input Type: Logic Gate Charge: 26 nC Td (on/off) @ 25°C: 1.1µs/4.6µs Test Condition: 300V, 10A, 1kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	패키지: -	재고6,351	435 V	25 A	50 A	1.25V @ 4V, 6A	125 W	-	Logic	26 nC	1.1µs/4.6µs	300V, 10A, 1kOhm, 5V	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
SIGC18T60NCX1SA6	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 20A, 13Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	20 A	60 A	2.5V @ 15V, 20A	-	-	Standard	-	21ns/110ns	300V, 20A, 13Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die