트랜지스터 - IGBT - 단일

IRGS4045DTRLPBF

Infineon Technologies

IGBT 600V 12A 77W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 19.5nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IHY20N135R3XKSA1

Infineon Technologies

IGBT 1350V 40A 310W TO247HC-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1350V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
• Power - Max: 310W
• Switching Energy: 1.3mJ (off)
• Input Type: Standard
• Gate Charge: 195nC
• Td (on/off) @ 25°C: -/335ns
• Test Condition: 600V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: PG-TO247HC-3

패키지: TO-247-3 Variant

SKW20N60FKSA1

Infineon Technologies

IGBT 600V 40A 179W TO247-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 179W
• Switching Energy: 440µJ (on), 330µJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 36ns/225ns
• Test Condition: 400V, 20A, 16 Ohm, 15V
• Reverse Recovery Time (trr): 300ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

SKB04N60ATMA1

Infineon Technologies

IGBT 600V 9.4A 50W TO263-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9.4A
• Current - Collector Pulsed (Icm): 19A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
• Power - Max: 50W
• Switching Energy: 131µJ
• Input Type: Standard
• Gate Charge: 24nC
• Td (on/off) @ 25°C: 22ns/237ns
• Test Condition: 400V, 4A, 67 Ohm, 15V
• Reverse Recovery Time (trr): 180ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SGB15N60ATMA1

Infineon Technologies

IGBT 600V 31A 139W TO263-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 31A
• Current - Collector Pulsed (Icm): 62A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
• Power - Max: 139W
• Switching Energy: 570µJ
• Input Type: Standard
• Gate Charge: 76nC
• Td (on/off) @ 25°C: 32ns/234ns
• Test Condition: 400V, 15A, 21 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4PC30S

Infineon Technologies

IGBT 600V 34A 100W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 34A
• Current - Collector Pulsed (Icm): 68A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
• Power - Max: 100W
• Switching Energy: 260µJ (on), 3.45mJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 22ns/540ns
• Test Condition: 480V, 18A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IRGPC50F

Infineon Technologies

IGBT FAST 600V 70A TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
• Power - Max: 200W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

RJH60M3DPP-M0#T2

Renesas Electronics America

IGBT 600V 35A 39.7W TO-220FL

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 35A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 17A
• Power - Max: 39.7W
• Switching Energy: 290µJ (on), 290µJ (off)
• Input Type: Standard
• Gate Charge: 60nC
• Td (on/off) @ 25°C: 38ns/90ns
• Test Condition: 300V, 17A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 90ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FL

패키지: TO-220-3 Full Pack

IXEH25N120D1

IXYS

IGBT 1200V 36A 200W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 36A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
• Power - Max: 200W
• Switching Energy: 4.1mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 20A, 68 Ohm, 15V
• Reverse Recovery Time (trr): 130ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD

패키지: TO-3P-3 Full Pack

ISL9V2040P3

Fairchild/ON Semiconductor

IGBT 430V 10A 130W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
• Power - Max: 130W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 12nC
• Td (on/off) @ 25°C: -/3.64µs
• Test Condition: 300V, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IKP20N60TAHKSA1

Infineon Technologies

IGBT 600V 40A 166W TO220-3-1

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
• Power - Max: 166W
• Switching Energy: 770µJ
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 18ns/199ns
• Test Condition: 400V, 20A, 12 Ohm, 15V
• Reverse Recovery Time (trr): 41ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3-1

패키지: TO-220-3

IXGX72N60B3H1

IXYS

IGBT 600V 75A 540W PLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 450A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
• Power - Max: 540W
• Switching Energy: 1.4mJ (on), 1mJ (off)
• Input Type: Standard
• Gate Charge: 225nC
• Td (on/off) @ 25°C: 31ns/152ns
• Test Condition: 480V, 50A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

패키지: TO-247-3

IXA20RG1200DHGLB-TRR

IXYS

IGBT 1200V 32A 125W SMPD

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 32A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 125W
• Switching Energy: 1.55mJ (on), 1.7mJ (off)
• Input Type: Standard
• Gate Charge: 48nC
• Td (on/off) @ 25°C: -
• Test Condition: 600V, 15A, 56 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 9-SMD Module
• Supplier Device Package: ISOPLUS-SMPD?.B

패키지: 9-SMD Module

IXXH50N60B3

IXYS

IGBT 600V 120A 600W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 120A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
• Power - Max: 600W
• Switching Energy: 670µJ (on), 740µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 27ns/100ns
• Test Condition: 360V, 36A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXXH)

패키지: TO-247-3

HGTG18N120BN

Fairchild/ON Semiconductor

IGBT 1200V 54A 390W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 54A
• Current - Collector Pulsed (Icm): 165A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
• Power - Max: 390W
• Switching Energy: 800µJ (on), 1.8mJ (off)
• Input Type: Standard
• Gate Charge: 165nC
• Td (on/off) @ 25°C: 23ns/170ns
• Test Condition: 960V, 18A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

패키지: TO-247-3

NGTB40N120FL2WAG

ON Semiconductor

IGBT FIELD STOP 1200V TO247-4

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 160A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
• Power - Max: 536W
• Switching Energy: 1.7mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 313nC
• Td (on/off) @ 25°C: 30ns/145ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 240ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: TO-247-4L

패키지: TO-247-4

FGH40T70SHD_F155

Fairchild/ON Semiconductor

650V FS GEN3 TRENCH IGBT

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 700V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
• Power - Max: 268W
• Switching Energy: 1.15mJ (on), 271µJ (off)
• Input Type: Standard
• Gate Charge: 69nC
• Td (on/off) @ 25°C: 22ns/66ns
• Test Condition: 400V, 40A, 6 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

패키지: TO-247-3

HGTP5N120BND

Fairchild/ON Semiconductor

IGBT 1200V 21A 167W TO220AB

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 21A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
• Power - Max: 167W
• Switching Energy: 450µJ (on), 390µJ (off)
• Input Type: Standard
• Gate Charge: 53nC
• Td (on/off) @ 25°C: 22ns/160ns
• Test Condition: 960V, 5A, 25 Ohm, 15V
• Reverse Recovery Time (trr): 65ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IXXR110N65B4H1

IXYS

IGBT 650V 150A 455W ISOPLUS247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 460A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A
• Power - Max: 455W
• Switching Energy: 2.2mJ (on), 1.05mJ (off)
• Input Type: Standard
• Gate Charge: 183nC
• Td (on/off) @ 25°C: 38ns/156ns
• Test Condition: 400V, 55A, 2 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: ISOPLUS247?

패키지: TO-247-3

NGB8245NT4G

Littelfuse Inc.

IGBT 490V 20A 150W D2PAK3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 500V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 50A
• Vce(on) (Max) @ Vge, Ic: 2V @ 4V, 15A
• Power - Max: 150W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STGWT40H60DLFB

STMicroelectronics

IGBT 600V 80A 283W TO3P-3L

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 283W
• Switching Energy: 363µJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: -/142ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

IRG4PC40UD-EPBF

Infineon Technologies

IGBT 600V 40A 160W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 160W
• Switching Energy: 710µJ (on), 350µJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 54ns/110ns
• Test Condition: 480V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

STGY40NC60VD

STMicroelectronics

IGBT 600V 80A 260W MAX247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
• Power - Max: 260W
• Switching Energy: 330µJ (on), 720µJ (off)
• Input Type: Standard
• Gate Charge: 214nC
• Td (on/off) @ 25°C: 43ns/140ns
• Test Condition: 390V, 40A, 3.3 Ohm, 15V
• Reverse Recovery Time (trr): 44ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: MAX247?

패키지: TO-247-3

CY25CAH-8F-T13-F10

Renesas Electronics Corporation

N-CHANNEL IGBT 400V, 150A

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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IXGK100N170

IXYS

IGBT PT 1000V 120A TO-264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 170 A
• Current - Collector Pulsed (Icm): 600 A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
• Power - Max: 830 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 425 nC
• Td (on/off) @ 25°C: 35ns/285ns
• Test Condition: 850V, 100A, 1Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: PLUS264™

패키지: -

RGTV60TS65GC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 60A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: 194 W
• Switching Energy: 570µJ (on), 500µJ (off)
• Input Type: Standard
• Gate Charge: 64 nC
• Td (on/off) @ 25°C: 33ns/105ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

패키지: -

SIGC156T60NR2CX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 200 A
• Current - Collector Pulsed (Icm): 600 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 180ns/285ns
• Test Condition: 300V, 200A, 1.5Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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MGP4N60ED

onsemi

IGBT, 6A, 600V, N-CHANNEL

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote