페이지 151 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 803
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

트랜지스터 - IGBT - 단일

기록 4,424
페이지  151/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IKI04N60TXKSA1
Infineon Technologies

IGBT 600V 8A 42W TO262-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 42W
  • Switching Energy: 143µJ
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/164ns
  • Test Condition: 400V, 4A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: PG-TO262-3
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고2,416
600V
8A
12A
2.05V @ 15V, 4A
42W
143µJ
Standard
27nC
14ns/164ns
400V, 4A, 47 Ohm, 15V
28ns
-40°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
PG-TO262-3
IRG4BC20F-SPBF
Infineon Technologies

IGBT 600V 16A 60W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 70µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 24ns/190ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고2,592
600V
16A
64A
2V @ 15V, 9A
60W
70µJ (on), 600µJ (off)
Standard
27nC
24ns/190ns
480V, 9A, 50 Ohm, 15V
-
-
Through Hole
TO-220-3
TO-220AB
92-0065
Infineon Technologies

IGBT STD 600V 60A TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,280
600V
60A
-
1.5V @ 15V, 31A
160W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot STGW45NC60VD
STMicroelectronics

IGBT 600V 90A 270W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
  • Power - Max: 270W
  • Switching Energy: 333µJ (on), 537µJ (off)
  • Input Type: Standard
  • Gate Charge: 126nC
  • Td (on/off) @ 25°C: 33ns/178ns
  • Test Condition: 390V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: TO-247-3
재고4,768
600V
90A
220A
2.4V @ 15V, 30A
270W
333µJ (on), 537µJ (off)
Standard
126nC
33ns/178ns
390V, 30A, 10 Ohm, 15V
45ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot STGD8NC60KT4
STMicroelectronics

IGBT 600V 15A 62W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
  • Power - Max: 62W
  • Switching Energy: 55µJ (on), 85µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 17ns/72ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고26,400
600V
15A
30A
2.75V @ 15V, 3A
62W
55µJ (on), 85µJ (off)
Standard
19nC
17ns/72ns
390V, 3A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGX50N60C2D1
IXYS

IGBT 600V 75A 480W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 480W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 138nC
  • Td (on/off) @ 25°C: 18ns/115ns
  • Test Condition: 480V, 40A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고2,656
600V
75A
300A
2.5V @ 15V, 40A
480W
380µJ (off)
Standard
138nC
18ns/115ns
480V, 40A, 2 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGR60N60C2D1
IXYS

IGBT 600V 75A 250W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 250W
  • Switching Energy: 490µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 18ns/95ns
  • Test Condition: 400V, 50A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고5,056
600V
75A
300A
2.7V @ 15V, 50A
250W
490µJ (off)
Standard
140nC
18ns/95ns
400V, 50A, 2 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
hot STGP12NB60KD
STMicroelectronics

IGBT 600V 30A 125W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
  • Power - Max: 125W
  • Switching Energy: 258µJ (off)
  • Input Type: Standard
  • Gate Charge: 54nC
  • Td (on/off) @ 25°C: 25ns/96ns
  • Test Condition: 480V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,536
600V
30A
60A
2.8V @ 15V, 12A
125W
258µJ (off)
Standard
54nC
25ns/96ns
480V, 12A, 10 Ohm, 15V
80ns
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
SGB15N120ATMA1
Infineon Technologies

IGBT 1200V 30A 198W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
  • Power - Max: 198W
  • Switching Energy: 1.9mJ
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 18ns/580ns
  • Test Condition: 800V, 15A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,520
1200V
30A
52A
3.6V @ 15V, 15A
198W
1.9mJ
Standard
130nC
18ns/580ns
800V, 15A, 33 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IRGS8B60KPBF
Infineon Technologies

IGBT 600V 28A 167W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
  • Power - Max: 167W
  • Switching Energy: 160µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 23ns/140ns
  • Test Condition: 400V, 8A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,888
600V
28A
34A
2.2V @ 15V, 8A
167W
160µJ (on), 160µJ (off)
Standard
29nC
23ns/140ns
400V, 8A, 50 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXBL64N250
IXYS

IGBT 2500V 116A 500W ISOPLUSI5

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500V
  • Current - Collector (Ic) (Max): 116A
  • Current - Collector Pulsed (Icm): 750A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 64A
  • Power - Max: 500W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 400nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 160ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUSi5-Pak?
  • Supplier Device Package: ISOPLUSi5-Pak?
패키지: ISOPLUSi5-Pak?
재고2,928
2500V
116A
750A
3V @ 15V, 64A
500W
-
Standard
400nC
-
-
160ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUSi5-Pak?
ISOPLUSi5-Pak?
IXGK35N120CD1
IXYS

IGBT 1200V 70A 350W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
  • Power - Max: 350W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 50ns/150ns
  • Test Condition: 960V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
패키지: TO-264-3, TO-264AA
재고3,296
1200V
70A
140A
4V @ 15V, 35A
350W
3mJ (off)
Standard
170nC
50ns/150ns
960V, 35A, 5 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
NGTG35N65FL2WG
ON Semiconductor

IGBT 650V 60A 167W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 840µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: 72ns/132ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고3,424
650V
70A
120A
2V @ 15V, 35A
300W
840µJ (on), 280µJ (off)
Standard
125nC
72ns/132ns
400V, 35A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGD3325G2_F085
Fairchild/ON Semiconductor

IGBT 300V DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: 800ns/5.1µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,168
250V
41A
-
1.25V @ 4V, 6A
150W
-
Logic
21nC
800ns/5.1µs
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
APT36GA60B
Microsemi Corporation

IGBT 600V 65A 290W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 109A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 307µJ (on), 254µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고5,792
600V
65A
109A
2.5V @ 15V, 20A
290W
307µJ (on), 254µJ (off)
Standard
102nC
16ns/122ns
400V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
FGH30T65UPDT_F155
Fairchild/ON Semiconductor

IGBT 650V 60A 250W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 760µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 22ns/139ns
  • Test Condition: 400V, 30A, 8 Ohm, 15V
  • Reverse Recovery Time (trr): 43ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: TO-247-3
재고6,060
650V
60A
90A
2.3V @ 15V, 30A
250W
760µJ (on), 400µJ (off)
Standard
155nC
22ns/139ns
400V, 30A, 8 Ohm, 15V
43ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IXXK110N65B4H1
IXYS

IGBT 650V 240A 880W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 630A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
  • Power - Max: 880W
  • Switching Energy: 2.2mJ (on), 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 183nC
  • Td (on/off) @ 25°C: 38ns/156ns
  • Test Condition: 400V, 55A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXXK)
패키지: TO-264-3, TO-264AA
재고5,600
650V
240A
630A
2.1V @ 15V, 110A
880W
2.2mJ (on), 1.05mJ (off)
Standard
183nC
38ns/156ns
400V, 55A, 2 Ohm, 15V
100ns
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXXK)
hot IRGP4640D-EPBF
Infineon Technologies

IGBT 600V 65A 250W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고14,496
600V
65A
72A
1.9V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
75nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
FGA30N120FTDTU
Fairchild/ON Semiconductor

IGBT 1200V 60A 339W TO3P

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 339W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 208nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 730ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고6,276
1200V
60A
90A
2V @ 15V, 30A
339W
-
Standard
208nC
-
-
730ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot STGB20NB37LZT4
STMicroelectronics

IGBT 425V 40A 200W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 425V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 20A
  • Power - Max: 200W
  • Switching Energy: 11.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 2.3µs/2µs
  • Test Condition: 250V, 20A, 1 kOhm, 4.5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고183,996
425V
40A
80A
2V @ 4.5V, 20A
200W
11.8mJ (off)
Standard
51nC
2.3µs/2µs
250V, 20A, 1 kOhm, 4.5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RGTH60TK65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 28A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 28 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 61 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 58 nC
  • Td (on/off) @ 25°C: 27ns/105ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,209
650 V
28 A
120 A
2.1V @ 15V, 30A
61 W
-
Standard
58 nC
27ns/105ns
400V, 30A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
AFGHL40T65SPD
onsemi

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267 W
  • Switching Energy: 1.16mJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 36 nC
  • Td (on/off) @ 25°C: 18ns/35ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 35 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고2,670
650 V
80 A
120 A
2.4V @ 15V, 40A
267 W
1.16mJ (on), 270µJ (off)
Standard
36 nC
18ns/35ns
400V, 40A, 6Ohm, 15V
35 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
WG50N65DHWQ
WeEn Semiconductors

IGBT TRENCH FS 650V 91A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 91 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 278 W
  • Switching Energy: 1.7mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 160 nC
  • Td (on/off) @ 25°C: 66ns/163ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 105 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
재고1,668
650 V
91 A
200 A
2V @ 15V, 50A
278 W
1.7mJ (on), 600µJ (off)
Standard
160 nC
66ns/163ns
400V, 50A, 10Ohm, 15V
105 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
RGS60TS65HRC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 56A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 56 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 223 W
  • Switching Energy: 660µJ (on), 810µJ (off)
  • Input Type: Standard
  • Gate Charge: 36 nC
  • Td (on/off) @ 25°C: 28ns/104ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
Request a Quote
650 V
56 A
90 A
2.1V @ 15V, 30A
223 W
660µJ (on), 810µJ (off)
Standard
36 nC
28ns/104ns
400V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
LGD18N40ATH
Littelfuse Inc.

IGBT 430V 18A TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430 V
  • Current - Collector (Ic) (Max): 18 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: 115 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: 0.7µs/4µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
패키지: -
Request a Quote
430 V
18 A
50 A
-
115 W
-
Logic
-
0.7µs/4µs
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
AOD7B65M3
Alpha & Omega Semiconductor Inc.

IGBT 650V 7A TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 14 A
  • Current - Collector Pulsed (Icm): 21 A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 7A
  • Power - Max: 69 W
  • Switching Energy: 108µJ (on), 99µJ (off)
  • Input Type: Standard
  • Gate Charge: 14 nC
  • Td (on/off) @ 25°C: 6ns/79ns
  • Test Condition: 400V, 7A, 43Ohm, 15V
  • Reverse Recovery Time (trr): 212 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
패키지: -
Request a Quote
650 V
14 A
21 A
2.35V @ 15V, 7A
69 W
108µJ (on), 99µJ (off)
Standard
14 nC
6ns/79ns
400V, 7A, 43Ohm, 15V
212 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
RGS30TSX2DGC11
Rohm Semiconductor

IGBT TRENCH FLD 1200V 30A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 267 W
  • Switching Energy: 740µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 41 nC
  • Td (on/off) @ 25°C: 30ns/70ns
  • Test Condition: 600V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 157 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고675
1200 V
30 A
45 A
2.1V @ 15V, 15A
267 W
740µJ (on), 600µJ (off)
Standard
41 nC
30ns/70ns
600V, 15A, 10Ohm, 15V
157 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
STGWA50H65DFB2
STMicroelectronics

DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 86 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 272 W
  • Switching Energy: 910µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 151 nC
  • Td (on/off) @ 25°C: 28ns/115ns
  • Test Condition: 400V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
재고1,620
650 V
86 A
150 A
2V @ 15V, 50A
272 W
910µJ (on), 580µJ (off)
Standard
151 nC
28ns/115ns
400V, 50A, 4.7Ohm, 15V
92 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads