페이지 156 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  156/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PK42UD1MPBF
Infineon Technologies

IGBT 1200V DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,528
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKD10N60R
Infineon Technologies

IGBT 600V 20A 150W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 590µJ
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 14ns/192ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,200
600V
20A
30A
2.1V @ 15V, 10A
150W
590µJ
Standard
64nC
14ns/192ns
400V, 10A, 23 Ohm, 15V
62ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IRG4RC10UD
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 40ns/87ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,120
600V
8.5A
34A
2.6V @ 15V, 5A
38W
140µJ (on), 120µJ (off)
Standard
15nC
40ns/87ns
480V, 5A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4PSH71UD
Infineon Technologies

IGBT 1200V 99A 350W SUPER247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 99A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
  • Power - Max: 350W
  • Switching Energy: 8.8mJ (on), 9.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 380nC
  • Td (on/off) @ 25°C: 46ns/250ns
  • Test Condition: 960V, 70A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 110ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-274AA
  • Supplier Device Package: SUPER-247 (TO-274AA)
패키지: TO-274AA
재고15,036
1200V
99A
200A
2.7V @ 15V, 70A
350W
8.8mJ (on), 9.4mJ (off)
Standard
380nC
46ns/250ns
960V, 70A, 5 Ohm, 15V
110ns
-55°C ~ 150°C (TJ)
Through Hole
TO-274AA
SUPER-247 (TO-274AA)
IXGA90N33TC
IXYS

IGBT 330V 90A 200W TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,472
330V
90A
-
1.8V @ 15V, 45A
200W
-
Standard
69nC
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
IRGC4069B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고5,968
600V
35A
-
-
-
-
Standard
-
-
-
-
175°C (TJ)
Surface Mount
Die
Die
IXYX50N170C
IXYS

IGBT 1700V 178A PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 178A
  • Current - Collector Pulsed (Icm): 460A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
  • Power - Max: 1500W
  • Switching Energy: 8.7mJ (on), 5.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 260nC
  • Td (on/off) @ 25°C: 20ns/180ns
  • Test Condition: 850V, 50A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): 44ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고2,400
1700V
178A
460A
3.7V @ 15V, 50A
1500W
8.7mJ (on), 5.6mJ (off)
Standard
260nC
20ns/180ns
850V, 50A, 1 Ohm, 15V
44ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
APT100GT60B2RG
Microsemi Corporation

IGBT 600V 148A 500W SOT247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 148A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: 500W
  • Switching Energy: 3.25mJ (on), 3.125mJ (off)
  • Input Type: Standard
  • Gate Charge: 460nC
  • Td (on/off) @ 25°C: 40ns/320ns
  • Test Condition: 400V, 100A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
패키지: TO-247-3 Variant
재고4,512
600V
148A
300A
2.5V @ 15V, 100A
500W
3.25mJ (on), 3.125mJ (off)
Standard
460nC
40ns/320ns
400V, 100A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXGT24N60B
IXYS

IGBT 600V 24A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고5,808
600V
24A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
NGTG20N60L2TF1G
ON Semiconductor

IGBT 600V 40A 64W TO-3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
  • Power - Max: 64W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 60ns/193ns
  • Test Condition: 300V, 20A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: -
패키지: TO-3P-3 Full Pack
재고5,296
600V
40A
105A
1.65V @ 15V, 20A
64W
-
Standard
84nC
60ns/193ns
300V, 20A, 30 Ohm, 15V
-
175°C (TJ)
Through Hole
TO-3P-3 Full Pack
-
STGB4M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, M S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 16A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 68W
  • Switching Energy: 40µJ (on), 136µJ (off)
  • Input Type: Standard
  • Gate Charge: 15.2nC
  • Td (on/off) @ 25°C: 12ns/86ns
  • Test Condition: 400V, 4A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 133ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,032
650V
8A
16A
2.1V @ 15V, 4A
68W
40µJ (on), 136µJ (off)
Standard
15.2nC
12ns/86ns
400V, 4A, 47 Ohm, 15V
133ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot APT75GN60BG
Microsemi Corporation

IGBT 600V 155A 536W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 155A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
  • Power - Max: 536W
  • Switching Energy: 2500µJ (on), 2140µJ (off)
  • Input Type: Standard
  • Gate Charge: 485nC
  • Td (on/off) @ 25°C: 47ns/385ns
  • Test Condition: 400V, 75A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고22,476
600V
155A
225A
1.85V @ 15V, 75A
536W
2500µJ (on), 2140µJ (off)
Standard
485nC
47ns/385ns
400V, 75A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IHW15N120E1XKSA1
Infineon Technologies

IGBT 1200V 15A TO247-3

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
  • Power - Max: 156W
  • Switching Energy: 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고9,396
1200V
30A
45A
2V @ 15V, 15A
156W
300µJ (off)
Standard
90nC
-
-
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRG4BC15UD-SPBF
Infineon Technologies

IGBT 600V 14A 49W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 42A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
  • Power - Max: 49W
  • Switching Energy: 240µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 17ns/160ns
  • Test Condition: 480V, 7.8A, 75 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고30,600
600V
14A
42A
2.4V @ 15V, 7.8A
49W
240µJ (on), 260µJ (off)
Standard
23nC
17ns/160ns
480V, 7.8A, 75 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
APT43GA90B
Microsemi Corporation

IGBT 900V 78A 337W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 129A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
  • Power - Max: 337W
  • Switching Energy: 875µJ (on), 425µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 12ns/82ns
  • Test Condition: 600V, 25A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고4,016
900V
78A
129A
3.1V @ 15V, 25A
337W
875µJ (on), 425µJ (off)
Standard
116nC
12ns/82ns
600V, 25A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXXK200N65B4
IXYS

IGBT 650V 370A 1150W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 370A
  • Current - Collector Pulsed (Icm): 1000A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A
  • Power - Max: 1150W
  • Switching Energy: 4.4mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 553nC
  • Td (on/off) @ 25°C: 62ns/245ns
  • Test Condition: 400V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXXK)
패키지: TO-264-3, TO-264AA
재고4,624
650V
370A
1000A
1.7V @ 15V, 160A
1150W
4.4mJ (on), 2.2mJ (off)
Standard
553nC
62ns/245ns
400V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXXK)
IXYH40N120B3D1
IXYS

IGBT 1200V 86A 480W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 86A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
  • Power - Max: 480W
  • Switching Energy: 2.7mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 22ns/177ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: TO-247-3
재고7,584
1200V
86A
180A
2.9V @ 15V, 40A
480W
2.7mJ (on), 1.6mJ (off)
Standard
87nC
22ns/177ns
600V, 40A, 10 Ohm, 15V
100ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
FGA40T65SHDF
Fairchild/ON Semiconductor

IGBT 650V 80A 268W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 1.22mJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 18ns/64ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 101ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고10,176
650V
80A
120A
1.81V @ 15V, 40A
268W
1.22mJ (on), 440µJ (off)
Standard
68nC
18ns/64ns
400V, 40A, 6 Ohm, 15V
101ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
FGA25S125P_SN00337
Fairchild/ON Semiconductor

IGBT 1250V 50A 250W TO-3PN

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1250V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
  • Power - Max: 250W
  • Switching Energy: 1.09mJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 204nC
  • Td (on/off) @ 25°C: 24ns/502ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고6,224
1250V
50A
75A
2.35V @ 15V, 25A
250W
1.09mJ (on), 580µJ (off)
Standard
204nC
24ns/502ns
600V, 25A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot ISL9V5036S3ST
Fairchild/ON Semiconductor

IGBT 390V 46A 250W TO263AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 46A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고14,820
390V
46A
-
1.6V @ 4V, 10A
250W
-
Logic
32nC
-/10.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IXYH40N120C4H1
IXYS

IGBT TRENCH 1200V 110A TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 110 A
  • Current - Collector Pulsed (Icm): 230 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 680 W
  • Switching Energy: 5.55mJ (on), 1.55mJ (off)
  • Input Type: Standard
  • Gate Charge: 92 nC
  • Td (on/off) @ 25°C: 21ns/140ns
  • Test Condition: 960V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 380 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: -
Request a Quote
1200 V
110 A
230 A
2.5V @ 15V, 32A
680 W
5.55mJ (on), 1.55mJ (off)
Standard
92 nC
21ns/140ns
960V, 32A, 5Ohm, 15V
380 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
RGTV80TK65GVC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 39A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 39 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 85 W
  • Switching Energy: 1.02mJ (on), 710µJ (off)
  • Input Type: Standard
  • Gate Charge: 81 nC
  • Td (on/off) @ 25°C: 39ns/113ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,350
650 V
39 A
160 A
1.9V @ 15V, 40A
85 W
1.02mJ (on), 710µJ (off)
Standard
81 nC
39ns/113ns
400V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
SIGC06T60EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 10A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
10 A
30 A
1.9V @ 15V, 10A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC121T60NR2CX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 125ns/225ns
  • Test Condition: 300V, 150A, 1.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
150 A
450 A
2.5V @ 15V, 150A
-
-
Standard
-
125ns/225ns
300V, 150A, 1.5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RJH30E2DPP-00-T2
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
STGP30H65DFB2
STMicroelectronics

IGBT 600V 60A 258W TO220AB

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 167 W
  • Switching Energy: 270µJ (on), 310µJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 18.4ns/71ns
  • Test Condition: 400V, 30A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): 115 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
Request a Quote
650 V
50 A
90 A
2.1V @ 15V, 30A
167 W
270µJ (on), 310µJ (off)
Standard
90 nC
18.4ns/71ns
400V, 30A, 6.8Ohm, 15V
115 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
HGTD3N60B3
Harris Corporation

IGBT 600V 7A IPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 7 A
  • Current - Collector Pulsed (Icm): 20 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
  • Power - Max: 33.3 W
  • Switching Energy: 66µJ (on), 88µJ (off)
  • Input Type: Standard
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 18ns/105ns
  • Test Condition: 480V, 3.5A, 82Ohm, 15V
  • Reverse Recovery Time (trr): 16 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package: IPAK
패키지: -
Request a Quote
600 V
7 A
20 A
2.1V @ 15V, 3.5A
33.3 W
66µJ (on), 88µJ (off)
Standard
21 nC
18ns/105ns
480V, 3.5A, 82Ohm, 15V
16 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-251-3 Short Leads, IPAK, TO-251AA
IPAK
FGI3040G2-F085
onsemi

ECOSPARK 2-400V IGNITION IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 900ns/4.8µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262 (I2PAK)
패키지: -
재고1,197
400 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
900ns/4.8µs
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262 (I2PAK)