페이지 157 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

IRGIB4640DPBF

Infineon Technologies

IGBT 600V 65A 250W TO220

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 65A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Power - Max: 250W
Switching Energy: 115µJ (on), 600µJ (off)
Input Type: Standard
Gate Charge: 75nC
Td (on/off) @ 25°C: 41ns/104ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 89ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TO-220-3

패키지: 8-PowerTDFN

재고4,688

600V

65A

72A

1.9V @ 15V, 24A

250W

115µJ (on), 600µJ (off)

Standard

75nC

41ns/104ns

400V, 24A, 10 Ohm, 15V

89ns

-55°C ~ 175°C (TJ)

Through Hole

8-PowerTDFN

PG-TO-220-3

IRG8CH42K10D

Infineon Technologies

IGBT 1200V 40A DIE

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,128

-

SGW20N60HSFKSA1

Infineon Technologies

IGBT 600V 36A 178W TO247-3

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 36A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Power - Max: 178W
Switching Energy: 690µJ
Input Type: Standard
Gate Charge: 100nC
Td (on/off) @ 25°C: 18ns/207ns
Test Condition: 400V, 20A, 16 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고7,344

600V

36A

80A

3.15V @ 15V, 20A

178W

690µJ

Standard

100nC

18ns/207ns

400V, 20A, 16 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PG-TO247-3

IRGIB6B60KD116P

Infineon Technologies

IGBT 600V 11A 38W TO220FP

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 11A
Current - Collector Pulsed (Icm): 22A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Power - Max: 38W
Switching Energy: 110µJ (on), 135µJ (off)
Input Type: Standard
Gate Charge: 18.2nC
Td (on/off) @ 25°C: 25ns/215ns
Test Condition: 400V, 5A, 100 Ohm, 15V
Reverse Recovery Time (trr): 70ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak

패키지: TO-220-3 Full Pack

재고3,312

600V

11A

22A

2.2V @ 15V, 5A

38W

110µJ (on), 135µJ (off)

Standard

18.2nC

25ns/215ns

400V, 5A, 100 Ohm, 15V

70ns

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220AB Full-Pak

IRG4BC20FD-STRL

Infineon Technologies

IGBT 600V 16A 60W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 64A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Power - Max: 60W
Switching Energy: 250µJ (on), 640µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 43ns/240ns
Test Condition: 480V, 9A, 50 Ohm, 15V
Reverse Recovery Time (trr): 37ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고14,952

600V

16A

64A

2V @ 15V, 9A

60W

250µJ (on), 640µJ (off)

Standard

27nC

43ns/240ns

480V, 9A, 50 Ohm, 15V

37ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

IXGX35N120CD1

IXYS

IGBT 1200V 70A 350W PLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 140A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Power - Max: 350W
Switching Energy: 3mJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 50ns/150ns
Test Condition: 960V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고7,840

1200V

70A

140A

4V @ 15V, 35A

350W

3mJ (off)

Standard

170nC

50ns/150ns

960V, 35A, 5 Ohm, 15V

60ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

PLUS247?-3

IXGP15N120C

IXYS

IGBT 1200V 30A 200W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Power - Max: 200W
Switching Energy: 1.05mJ (off)
Input Type: Standard
Gate Charge: 86nC
Td (on/off) @ 25°C: 25ns/150ns
Test Condition: 960V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고2,816

1200V

30A

60A

3.8V @ 15V, 15A

200W

1.05mJ (off)

Standard

86nC

25ns/150ns

960V, 15A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IXGH40N60

IXYS

IGBT 600V 75A 250W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Power - Max: 250W
Switching Energy: 3mJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고4,896

600V

75A

150A

2.5V @ 15V, 40A

250W

3mJ (off)

Standard

200nC

100ns/600ns

480V, 40A, 22 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

FGA70N33BTDTU

Fairchild/ON Semiconductor

IGBT 330V 149W TO3P

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 330V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 220A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 70A
Power - Max: 149W
Switching Energy: -
Input Type: Standard
Gate Charge: 49nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): 23ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

재고20,508

330V

-

220A

1.7V @ 15V, 70A

149W

-

Standard

49nC

-

23ns

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3, SC-65-3

TO-3P

IRG8P60N120KDPBF

Infineon Technologies

IGBT 1200V 100A 420W TO-247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Power - Max: 420W
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Input Type: Standard
Gate Charge: 345nC
Td (on/off) @ 25°C: 40ns/240ns
Test Condition: 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr): 210ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고6,256

1200V

100A

120A

2V @ 15V, 40A

420W

2.8mJ (on), 2.3mJ (off)

Standard

345nC

40ns/240ns

600V, 40A, 5 Ohm, 15V

210ns

-40°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

APT70GR65B2SCD30

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 134A
Current - Collector Pulsed (Icm): 260A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
Power - Max: 595W
Switching Energy: -
Input Type: -
Gate Charge: 305nC
Td (on/off) @ 25°C: 19ns/170ns
Test Condition: 433V, 70A, 4.3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: T-MAX? [B2]

패키지: TO-247-3

재고4,864

650V

134A

260A

2.4V @ 15V, 70A

595W

-

305nC

19ns/170ns

433V, 70A, 4.3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

T-MAX? [B2]

IXGP4N100

IXYS

IGBT 1000V 8A 40W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 8A
Current - Collector Pulsed (Icm): 16A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 4A
Power - Max: 40W
Switching Energy: 900µJ (off)
Input Type: Standard
Gate Charge: 13.6nC
Td (on/off) @ 25°C: 20ns/390ns
Test Condition: 800V, 4A, 120 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고6,752

1000V

8A

16A

2.7V @ 15V, 4A

40W

900µJ (off)

Standard

13.6nC

20ns/390ns

800V, 4A, 120 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

FGM623S

Sanken

IGBT 600V 30A 60W TO3PF

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 60W
Switching Energy: -
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 100ns/300ns
Test Condition: 300V, 30A, 39 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3PF

패키지: TO-3P-3 Full Pack

재고6,224

600V

30A

100A

1.7V @ 15V, 30A

60W

-

Standard

65nC

100ns/300ns

300V, 30A, 39 Ohm, 15V

-

150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3PF

STGWA30M65DF2

STMicroelectronics

IGBT 650V 30A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Power - Max: 258W
Switching Energy: 300µJ (on), 960µJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 31.6ns/115ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 140ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads

패키지: TO-247-3

재고7,728

650V

60A

120A

2V @ 15V, 30A

258W

300µJ (on), 960µJ (off)

Standard

80nC

31.6ns/115ns

400V, 30A, 10 Ohm, 15V

140ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247 Long Leads

STGWT38IH130D

STMicroelectronics

IGBT 1300V 63A 250W TO3P

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1300V
Current - Collector (Ic) (Max): 63A
Current - Collector Pulsed (Icm): 125A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Power - Max: 250W
Switching Energy: 3.4mJ (off)
Input Type: Standard
Gate Charge: 127nC
Td (on/off) @ 25°C: -/284ns
Test Condition: 960V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-3P

패키지: TO-3P-3 Full Pack

재고12,792

1300V

63A

125A

2.8V @ 15V, 20A

250W

3.4mJ (off)

Standard

127nC

-/284ns

960V, 20A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-3P

RJP60D0DPE-00#J3

Renesas Electronics America

IGBT 600V 45A 122W LDPAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
Power - Max: 122W
Switching Energy: -
Input Type: Standard
Gate Charge: 45nC
Td (on/off) @ 25°C: 35ns/90ns
Test Condition: 300V, 22A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-83
Supplier Device Package: 4-LDPAK

패키지: SC-83

재고18,516

600V

45A

-

2.2V @ 15V, 22A

122W

-

Standard

45nC

35ns/90ns

300V, 22A, 5 Ohm, 15V

-

150°C (TJ)

Surface Mount

SC-83

4-LDPAK

STGW10M65DF2

STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Power - Max: 115W
Switching Energy: 120µJ (on), 270µJ (off)
Input Type: Standard
Gate Charge: 28nC
Td (on/off) @ 25°C: 19ns/91ns
Test Condition: 400V, 10A, 22 Ohm, 15V
Reverse Recovery Time (trr): 96ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고13,860

650V

20A

40A

2V @ 15V, 10A

115W

120µJ (on), 270µJ (off)

Standard

28nC

19ns/91ns

400V, 10A, 22 Ohm, 15V

96ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

STGW40V60DF

STMicroelectronics

IGBT 600V 80A 283W TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Power - Max: 283W
Switching Energy: 456µJ (on), 411µJ (off)
Input Type: Standard
Gate Charge: 226nC
Td (on/off) @ 25°C: 52ns/208ns
Test Condition: 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 41ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고89,724

600V

80A

160A

2.3V @ 15V, 40A

283W

456µJ (on), 411µJ (off)

Standard

226nC

52ns/208ns

400V, 40A, 10 Ohm, 15V

41ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247

FGD3325G2-F085

onsemi

IGBT 250V 41A TO252AA

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 41 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Power - Max: 150 W
Switching Energy: -
Input Type: Logic
Gate Charge: 21 nC
Td (on/off) @ 25°C: 800ns/5.1µs
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA

패키지: -

Request a Quote

250 V

41 A

-

1.25V @ 4V, 6A

150 W

-

Logic

21 nC

800ns/5.1µs

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

FGB40T65SPD-F085

onsemi

IGBT FIELD STOP 650V 80A D2PAK

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 267 W
Switching Energy: 970µJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 36 nC
Td (on/off) @ 25°C: 18ns/35ns
Test Condition: 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr): 34 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2PAK)

패키지: -

Request a Quote

650 V

80 A

120 A

2.4V @ 15V, 40A

267 W

970µJ (on), 280µJ (off)

Standard

36 nC

18ns/35ns

400V, 40A, 6Ohm, 15V

34 ns

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263 (D2PAK)

AOT10B65MQ2

Alpha & Omega Semiconductor Inc.

IGBT 10A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 30 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Power - Max: 150 W
Switching Energy: 180µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 24 nC
Td (on/off) @ 25°C: 12ns/91ns
Test Condition: 400V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr): 106 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

Request a Quote

650 V

20 A

30 A

2V @ 15V, 10A

150 W

180µJ (on), 130µJ (off)

Standard

24 nC

12ns/91ns

400V, 10A, 30Ohm, 15V

106 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220

IXYP24N100C4

IXYS

IGBT DISCRETE TO-220

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 76 A
Current - Collector Pulsed (Icm): 132 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Power - Max: 375 W
Switching Energy: 3.6mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 43 nC
Td (on/off) @ 25°C: 15ns/147ns
Test Condition: 800V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr): 35 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

Request a Quote

1000 V

76 A

132 A

2.3V @ 15V, 24A

375 W

3.6mJ (on), 1mJ (off)

Standard

43 nC

15ns/147ns

800V, 24A, 10Ohm, 15V

35 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220

RJP6065DPE-00-J3

Renesas Electronics Corporation

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

RGT16TM65DGC9

Rohm Semiconductor

IGBT TRENCH FLD 650V 9A TO220NFM

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 9 A
Current - Collector Pulsed (Icm): 24 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Power - Max: 22 W
Switching Energy: -
Input Type: Standard
Gate Charge: 21 nC
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Reverse Recovery Time (trr): 42 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NFM

패키지: -

재고3,000

650 V

9 A

24 A

2.1V @ 15V, 8A

22 W

-

Standard

21 nC

13ns/33ns

400V, 8A, 10Ohm, 15V

42 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220NFM

RJP2557DPK-E

Renesas Electronics Corporation

HIGH SPEED IGBT, 270V, 50A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IRGC49B120UB

Infineon Technologies

IGBT CHIP

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

1200 V

50 A

-

2.25V @ 15V, 10A

-

Standard

-

Surface Mount

Die

FGD2736G3-F085

onsemi

IGBT 360V 21A TO252AA

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 360 V
Current - Collector (Ic) (Max): 21 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.65V @ 4.5V, 10A
Power - Max: 150 W
Switching Energy: -
Input Type: Logic
Gate Charge: 18 nC
Td (on/off) @ 25°C: 4µs/15µs
Test Condition: 14V, 10A, 1000Ohm, 5V
Reverse Recovery Time (trr): 7 µs
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA

패키지: -

재고879

360 V

21 A

-

1.65V @ 4.5V, 10A

150 W

-

Logic

18 nC

4µs/15µs

14V, 10A, 1000Ohm, 5V

7 µs

-40°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

RJH3047ADPK-80-T2

Renesas Electronics Corporation

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGIB4640DPBF	Infineon Technologies	IGBT 600V 65A 250W TO220 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Power - Max: 250W Switching Energy: 115µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 41ns/104ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 8-PowerTDFN Supplier Device Package: PG-TO-220-3	패키지: 8-PowerTDFN	재고4,688	600V	65A	72A	1.9V @ 15V, 24A	250W	115µJ (on), 600µJ (off)	Standard	75nC	41ns/104ns	400V, 24A, 10 Ohm, 15V	89ns	-55°C ~ 175°C (TJ)	Through Hole	8-PowerTDFN	PG-TO-220-3
IRG8CH42K10D	Infineon Technologies	IGBT 1200V 40A DIE IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,128	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SGW20N60HSFKSA1	Infineon Technologies	IGBT 600V 36A 178W TO247-3 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 36A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A Power - Max: 178W Switching Energy: 690µJ Input Type: Standard Gate Charge: 100nC Td (on/off) @ 25°C: 18ns/207ns Test Condition: 400V, 20A, 16 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고7,344	600V	36A	80A	3.15V @ 15V, 20A	178W	690µJ	Standard	100nC	18ns/207ns	400V, 20A, 16 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3
IRGIB6B60KD116P	Infineon Technologies	IGBT 600V 11A 38W TO220FP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 38W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100 Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	패키지: TO-220-3 Full Pack	재고3,312	600V	11A	22A	2.2V @ 15V, 5A	38W	110µJ (on), 135µJ (off)	Standard	18.2nC	25ns/215ns	400V, 5A, 100 Ohm, 15V	70ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
IRG4BC20FD-STRL	Infineon Technologies	IGBT 600V 16A 60W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 64A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A Power - Max: 60W Switching Energy: 250µJ (on), 640µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 43ns/240ns Test Condition: 480V, 9A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고14,952	600V	16A	64A	2V @ 15V, 9A	60W	250µJ (on), 640µJ (off)	Standard	27nC	43ns/240ns	480V, 9A, 50 Ohm, 15V	37ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IXGX35N120CD1	IXYS	IGBT 1200V 70A 350W PLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 140A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A Power - Max: 350W Switching Energy: 3mJ (off) Input Type: Standard Gate Charge: 170nC Td (on/off) @ 25°C: 50ns/150ns Test Condition: 960V, 35A, 5 Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고7,840	1200V	70A	140A	4V @ 15V, 35A	350W	3mJ (off)	Standard	170nC	50ns/150ns	960V, 35A, 5 Ohm, 15V	60ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PLUS247?-3
IXGP15N120C	IXYS	IGBT 1200V 30A 200W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A Power - Max: 200W Switching Energy: 1.05mJ (off) Input Type: Standard Gate Charge: 86nC Td (on/off) @ 25°C: 25ns/150ns Test Condition: 960V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고2,816	1200V	30A	60A	3.8V @ 15V, 15A	200W	1.05mJ (off)	Standard	86nC	25ns/150ns	960V, 15A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IXGH40N60	IXYS	IGBT 600V 75A 250W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 250W Switching Energy: 3mJ (off) Input Type: Standard Gate Charge: 200nC Td (on/off) @ 25°C: 100ns/600ns Test Condition: 480V, 40A, 22 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고4,896	600V	75A	150A	2.5V @ 15V, 40A	250W	3mJ (off)	Standard	200nC	100ns/600ns	480V, 40A, 22 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
FGA70N33BTDTU	Fairchild/ON Semiconductor	IGBT 330V 149W TO3P IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 330V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 220A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 70A Power - Max: 149W Switching Energy: - Input Type: Standard Gate Charge: 49nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): 23ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	패키지: TO-3P-3, SC-65-3	재고20,508	330V	-	220A	1.7V @ 15V, 70A	149W	-	Standard	49nC	-	-	23ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
IRG8P60N120KDPBF	Infineon Technologies	IGBT 1200V 100A 420W TO-247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 420W Switching Energy: 2.8mJ (on), 2.3mJ (off) Input Type: Standard Gate Charge: 345nC Td (on/off) @ 25°C: 40ns/240ns Test Condition: 600V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): 210ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고6,256	1200V	100A	120A	2V @ 15V, 40A	420W	2.8mJ (on), 2.3mJ (off)	Standard	345nC	40ns/240ns	600V, 40A, 5 Ohm, 15V	210ns	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
APT70GR65B2SCD30	Microsemi Corporation	INSULATED GATE BIPOLAR TRANSISTO IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 134A Current - Collector Pulsed (Icm): 260A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A Power - Max: 595W Switching Energy: - Input Type: - Gate Charge: 305nC Td (on/off) @ 25°C: 19ns/170ns Test Condition: 433V, 70A, 4.3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: T-MAX? [B2]	패키지: TO-247-3	재고4,864	650V	134A	260A	2.4V @ 15V, 70A	595W	-	-	305nC	19ns/170ns	433V, 70A, 4.3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	T-MAX? [B2]
IXGP4N100	IXYS	IGBT 1000V 8A 40W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 8A Current - Collector Pulsed (Icm): 16A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 4A Power - Max: 40W Switching Energy: 900µJ (off) Input Type: Standard Gate Charge: 13.6nC Td (on/off) @ 25°C: 20ns/390ns Test Condition: 800V, 4A, 120 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고6,752	1000V	8A	16A	2.7V @ 15V, 4A	40W	900µJ (off)	Standard	13.6nC	20ns/390ns	800V, 4A, 120 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
FGM623S	Sanken	IGBT 600V 30A 60W TO3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Power - Max: 60W Switching Energy: - Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 100ns/300ns Test Condition: 300V, 30A, 39 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	패키지: TO-3P-3 Full Pack	재고6,224	600V	30A	100A	1.7V @ 15V, 30A	60W	-	Standard	65nC	100ns/300ns	300V, 30A, 39 Ohm, 15V	-	150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PF
STGWA30M65DF2	STMicroelectronics	IGBT 650V 30A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 258W Switching Energy: 300µJ (on), 960µJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 31.6ns/115ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads	패키지: TO-247-3	재고7,728	650V	60A	120A	2V @ 15V, 30A	258W	300µJ (on), 960µJ (off)	Standard	80nC	31.6ns/115ns	400V, 30A, 10 Ohm, 15V	140ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 Long Leads
STGWT38IH130D	STMicroelectronics	IGBT 1300V 63A 250W TO3P IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1300V Current - Collector (Ic) (Max): 63A Current - Collector Pulsed (Icm): 125A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A Power - Max: 250W Switching Energy: 3.4mJ (off) Input Type: Standard Gate Charge: 127nC Td (on/off) @ 25°C: -/284ns Test Condition: 960V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3P	패키지: TO-3P-3 Full Pack	재고12,792	1300V	63A	125A	2.8V @ 15V, 20A	250W	3.4mJ (off)	Standard	127nC	-/284ns	960V, 20A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3P
RJP60D0DPE-00#J3	Renesas Electronics America	IGBT 600V 45A 122W LDPAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A Power - Max: 122W Switching Energy: - Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 35ns/90ns Test Condition: 300V, 22A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-83 Supplier Device Package: 4-LDPAK	패키지: SC-83	재고18,516	600V	45A	-	2.2V @ 15V, 22A	122W	-	Standard	45nC	35ns/90ns	300V, 22A, 5 Ohm, 15V	-	150°C (TJ)	Surface Mount	SC-83	4-LDPAK
STGW10M65DF2	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT M SE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 115W Switching Energy: 120µJ (on), 270µJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 19ns/91ns Test Condition: 400V, 10A, 22 Ohm, 15V Reverse Recovery Time (trr): 96ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고13,860	650V	20A	40A	2V @ 15V, 10A	115W	120µJ (on), 270µJ (off)	Standard	28nC	19ns/91ns	400V, 10A, 22 Ohm, 15V	96ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
STGW40V60DF	STMicroelectronics	IGBT 600V 80A 283W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Power - Max: 283W Switching Energy: 456µJ (on), 411µJ (off) Input Type: Standard Gate Charge: 226nC Td (on/off) @ 25°C: 52ns/208ns Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 41ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고89,724	600V	80A	160A	2.3V @ 15V, 40A	283W	456µJ (on), 411µJ (off)	Standard	226nC	52ns/208ns	400V, 40A, 10 Ohm, 15V	41ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247
FGD3325G2-F085	onsemi	IGBT 250V 41A TO252AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 250 V Current - Collector (Ic) (Max): 41 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: 21 nC Td (on/off) @ 25°C: 800ns/5.1µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	패키지: -	Request a Quote	250 V	41 A	-	1.25V @ 4V, 6A	150 W	-	Logic	21 nC	800ns/5.1µs	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA
FGB40T65SPD-F085	onsemi	IGBT FIELD STOP 650V 80A D2PAK IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 267 W Switching Energy: 970µJ (on), 280µJ (off) Input Type: Standard Gate Charge: 36 nC Td (on/off) @ 25°C: 18ns/35ns Test Condition: 400V, 40A, 6Ohm, 15V Reverse Recovery Time (trr): 34 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2PAK)	패키지: -	Request a Quote	650 V	80 A	120 A	2.4V @ 15V, 40A	267 W	970µJ (on), 280µJ (off)	Standard	36 nC	18ns/35ns	400V, 40A, 6Ohm, 15V	34 ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)
AOT10B65MQ2	Alpha & Omega Semiconductor Inc.	IGBT 10A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 150 W Switching Energy: 180µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 24 nC Td (on/off) @ 25°C: 12ns/91ns Test Condition: 400V, 10A, 30Ohm, 15V Reverse Recovery Time (trr): 106 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote	650 V	20 A	30 A	2V @ 15V, 10A	150 W	180µJ (on), 130µJ (off)	Standard	24 nC	12ns/91ns	400V, 10A, 30Ohm, 15V	106 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
IXYP24N100C4	IXYS	IGBT DISCRETE TO-220 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector (Ic) (Max): 76 A Current - Collector Pulsed (Icm): 132 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A Power - Max: 375 W Switching Energy: 3.6mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 43 nC Td (on/off) @ 25°C: 15ns/147ns Test Condition: 800V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 35 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote	1000 V	76 A	132 A	2.3V @ 15V, 24A	375 W	3.6mJ (on), 1mJ (off)	Standard	43 nC	15ns/147ns	800V, 24A, 10Ohm, 15V	35 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220
RJP6065DPE-00-J3	Renesas Electronics Corporation	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RGT16TM65DGC9	Rohm Semiconductor	IGBT TRENCH FLD 650V 9A TO220NFM IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 9 A Current - Collector Pulsed (Icm): 24 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Power - Max: 22 W Switching Energy: - Input Type: Standard Gate Charge: 21 nC Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Reverse Recovery Time (trr): 42 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NFM	패키지: -	재고3,000	650 V	9 A	24 A	2.1V @ 15V, 8A	22 W	-	Standard	21 nC	13ns/33ns	400V, 8A, 10Ohm, 15V	42 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NFM
RJP2557DPK-E	Renesas Electronics Corporation	HIGH SPEED IGBT, 270V, 50A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRGC49B120UB	Infineon Technologies	IGBT CHIP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	1200 V	50 A	-	2.25V @ 15V, 10A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
FGD2736G3-F085	onsemi	IGBT 360V 21A TO252AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 360 V Current - Collector (Ic) (Max): 21 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.65V @ 4.5V, 10A Power - Max: 150 W Switching Energy: - Input Type: Logic Gate Charge: 18 nC Td (on/off) @ 25°C: 4µs/15µs Test Condition: 14V, 10A, 1000Ohm, 5V Reverse Recovery Time (trr): 7 µs Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	패키지: -	재고879	360 V	21 A	-	1.65V @ 4.5V, 10A	150 W	-	Logic	18 nC	4µs/15µs	14V, 10A, 1000Ohm, 5V	7 µs	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA
RJH3047ADPK-80-T2	Renesas Electronics Corporation	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-