페이지 36 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  36/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGP4069-EPBF
Infineon Technologies

IGBT 600V 76A 268W TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 76A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 35A
  • Power - Max: 268W
  • Switching Energy: 390µJ (on), 632µJ (off)
  • Input Type: Standard
  • Gate Charge: 104nC
  • Td (on/off) @ 25°C: 46ns/105ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고6,944
600V
76A
105A
1.85V @ 15V, 35A
268W
390µJ (on), 632µJ (off)
Standard
104nC
46ns/105ns
400V, 35A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot SKB15N60 E8151
Infineon Technologies

IGBT 600V 31A 139W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21 Ohm, 15V
  • Reverse Recovery Time (trr): 279ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고72,000
600V
31A
62A
2.4V @ 15V, 15A
139W
570µJ
Standard
76nC
32ns/234ns
400V, 15A, 21 Ohm, 15V
279ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
SGW30N60HSFKSA1
Infineon Technologies

IGBT 600V 41A 250W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 112A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 1.15mJ
  • Input Type: Standard
  • Gate Charge: 141nC
  • Td (on/off) @ 25°C: 20ns/250ns
  • Test Condition: 400V, 30A, 11 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고5,312
600V
41A
112A
3.15V @ 15V, 30A
250W
1.15mJ
Standard
141nC
20ns/250ns
400V, 30A, 11 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRG4RC10KPBF
Infineon Technologies

IGBT 600V 9A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 160µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 11ns/51ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,872
600V
9A
18A
2.62V @ 15V, 5A
38W
160µJ (on), 100µJ (off)
Standard
19nC
11ns/51ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IXGR24N60B
IXYS

IGBT 600V 42A 80W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 80W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고7,792
600V
42A
-
2.5V @ 15V, 24A
80W
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
hot STGP30NC60W
STMicroelectronics

IGBT 600V 60A 200W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 305µJ (on), 181µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 29.5ns/118ns
  • Test Condition: 390V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고6,896
600V
60A
150A
2.5V @ 15V, 20A
200W
305µJ (on), 181µJ (off)
Standard
102nC
29.5ns/118ns
390V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
SGS6N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 6A 22W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A
  • Power - Max: 22W
  • Switching Energy: 57µJ (on), 25µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 15ns/60ns
  • Test Condition: 300V, 3A, 80 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: TO-220-3 Full Pack
재고2,400
600V
6A
25A
2.6V @ 15V, 3A
22W
57µJ (on), 25µJ (off)
Standard
15nC
15ns/60ns
300V, 3A, 80 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
IKP20N65F5XKSA1
Infineon Technologies

IGBT 650V TO220-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 42A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 125W
  • Switching Energy: 160µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 20ns/165ns
  • Test Condition: 400V, 10A, 32 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
패키지: TO-220-3
재고6,032
650V
42A
60A
2.1V @ 15V, 20A
125W
160µJ (on), 60µJ (off)
Standard
48nC
20ns/165ns
400V, 10A, 32 Ohm, 15V
53ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
IRGB4B60KPBF
Infineon Technologies

IGBT 600V 12A 63W TO220A

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 63W
  • Switching Energy: 130µJ (on), 83µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 22ns/100ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고6,320
600V
12A
24A
2.5V @ 15V, 4A
63W
130µJ (on), 83µJ (off)
Standard
12nC
22ns/100ns
400V, 4A, 100 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRG4BC20W-SPBF
Infineon Technologies

IGBT 600V 13A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 60µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: 22ns/110ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고103,116
600V
13A
52A
2.6V @ 15V, 6.5A
60W
60µJ (on), 80µJ (off)
Standard
26nC
22ns/110ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXDH30N120D1
IXYS

IGBT 1200V 60A 300W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 76A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 4.6mJ (on), 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 30A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD (IXDH)
패키지: TO-3P-3 Full Pack
재고3,504
1200V
60A
76A
2.9V @ 15V, 30A
300W
4.6mJ (on), 3.4mJ (off)
Standard
120nC
-
600V, 30A, 47 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-247AD (IXDH)
hot APT30GN60BDQ2G
Microsemi Corporation

IGBT 600V 63A 203W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 63A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 203W
  • Switching Energy: 525µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 165nC
  • Td (on/off) @ 25°C: 12ns/155ns
  • Test Condition: 400V, 30A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고19,020
600V
63A
90A
1.9V @ 15V, 30A
203W
525µJ (on), 700µJ (off)
Standard
165nC
12ns/155ns
400V, 30A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXYP20N65C3D1
IXYS

IGBT 650V 18A 50W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 430µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 19ns/80ns
  • Test Condition: 400V, 20A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 135ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고7,824
650V
50A
105A
2.5V @ 15V, 20A
200W
430µJ (on), 350µJ (off)
Standard
30nC
19ns/80ns
400V, 20A, 20 Ohm, 15V
135ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
NGTB35N65FL2WG
ON Semiconductor

IGBT 650V 70A 300W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 840µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: 72ns/132ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고5,040
650V
70A
120A
2V @ 15V, 35A
300W
840µJ (on), 280µJ (off)
Standard
125nC
72ns/132ns
400V, 35A, 10 Ohm, 15V
68ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IXBK75N170
IXYS

IGBT 1700V 200A 1040W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): 580A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
  • Power - Max: 1040W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 350nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.5µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: TO-264-3, TO-264AA
재고6,256
1700V
200A
580A
3.1V @ 15V, 75A
1040W
-
Standard
350nC
-
-
1.5µs
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
FGP20N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO220

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 165W
  • Switching Energy: 380µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 13ns/87ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고12,348
600V
40A
60A
2.4V @ 15V, 20A
165W
380µJ (on), 260µJ (off)
Standard
63nC
13ns/87ns
400V, 20A, 10 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot NGTB40N120FL3WG
ON Semiconductor

IGBT 1200V 160A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 454W
  • Switching Energy: 1.6mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 212nC
  • Td (on/off) @ 25°C: 18ns/145ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 136ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고14,520
1200V
160A
160A
2.3V @ 15V, 40A
454W
1.6mJ (on), 1.1mJ (off)
Standard
212nC
18ns/145ns
600V, 40A, 10 Ohm, 15V
136ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRGP35B60PDPBF
Infineon Technologies

IGBT 600V 60A 308W TO247AC

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
  • Power - Max: 308W
  • Switching Energy: 220µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 26ns/110ns
  • Test Condition: 390V, 22A, 3.3 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고170,688
600V
60A
120A
2.55V @ 15V, 35A
308W
220µJ (on), 215µJ (off)
Standard
160nC
26ns/110ns
390V, 22A, 3.3 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot STGW30NC60WD
STMicroelectronics

IGBT 600V 60A 200W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 305µJ (on), 181µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 29.5ns/118ns
  • Test Condition: 390V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고34,980
600V
60A
150A
2.5V @ 15V, 20A
200W
305µJ (on), 181µJ (off)
Standard
102nC
29.5ns/118ns
390V, 20A, 10 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SFGH15T120SMD-F155
onsemi

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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LGB8245TI
Littelfuse Inc.

IGBT 500V 20A TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: 1µs/4.5µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
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500 V
20 A
50 A
-
150 W
-
Logic
-
1µs/4.5µs
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
FGD3040G2-F085-1
onsemi

IGBT 400V 41A TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 6.5A, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
패키지: -
Request a Quote
400 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
-/4.8µs
300V, 6.5A, 1kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
STGWA80H65DFBAG
STMicroelectronics

AUTOMOTIVE-GRADE TRENCH GATE FIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 120 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
  • Power - Max: 535 W
  • Switching Energy: 3.26mJ (on), 2.33mJ (off)
  • Input Type: Standard
  • Gate Charge: 453 nC
  • Td (on/off) @ 25°C: -/360ns
  • Test Condition: 400V, 80A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 64 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
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650 V
120 A
240 A
2V @ 15V, 80A
535 W
3.26mJ (on), 2.33mJ (off)
Standard
453 nC
-/360ns
400V, 80A, 10Ohm, 15V
64 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IKZA100N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 140A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
  • Power - Max: 429 W
  • Switching Energy: 1.24mJ (on), 1.22mJ (off)
  • Input Type: Standard
  • Gate Charge: 207 nC
  • Td (on/off) @ 25°C: 32ns/240ns
  • Test Condition: 400V, 100A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 62 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
패키지: -
재고612
650 V
140 A
400 A
1.65V @ 15V, 100A
429 W
1.24mJ (on), 1.22mJ (off)
Standard
207 nC
32ns/240ns
400V, 100A, 10Ohm, 15V
62 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4-3
IRGC100B120KB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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1200 V
100 A
-
2.6V @ 15V, 100A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
FGH4L40T120LQD
onsemi

1200V 40A FSIII IGBT LOW VCESAT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 306 W
  • Switching Energy: 1.04mJ (on), 1.35mJ (off)
  • Input Type: Standard
  • Gate Charge: 227 nC
  • Td (on/off) @ 25°C: 42ns/218ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 59 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
패키지: -
재고1,104
1200 V
80 A
160 A
1.8V @ 15V, 40A
306 W
1.04mJ (on), 1.35mJ (off)
Standard
227 nC
42ns/218ns
600V, 40A, 10Ohm, 15V
59 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L
IGD15N65T6ARMA1
Infineon Technologies

IGBT TRENCH FS 650V 30A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 57.5 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
  • Power - Max: 100 W
  • Switching Energy: 230µJ (on), 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 37 nC
  • Td (on/off) @ 25°C: 30ns/117ns
  • Test Condition: 400V, 11.5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: -
재고1,944
650 V
30 A
57.5 A
1.9V @ 15V, 11.5A
100 W
230µJ (on), 110µJ (off)
Standard
37 nC
30ns/117ns
400V, 11.5A, 47Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
RGT40NS65DGC9
Rohm Semiconductor

IGBT TRENCH FIELD 650V 40A TO262

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 161 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40 nC
  • Td (on/off) @ 25°C: 22ns/75ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262
패키지: -
재고3,000
650 V
40 A
60 A
2.1V @ 15V, 20A
161 W
-
Standard
40 nC
22ns/75ns
400V, 20A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262