페이지 39 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  39/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7CH75K10EF-R
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.53V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 500nC
  • Td (on/off) @ 25°C: 120ns/445ns
  • Test Condition: 600V, 100A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,064
1200V
-
-
1.53V @ 15V, 20A
-
-
Standard
500nC
120ns/445ns
600V, 100A, 5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
hot FGD3040G2
Fairchild/ON Semiconductor

IGBT 400V 41A 150W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 6.5A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고56,400
400V
41A
-
1.25V @ 4V, 6A
150W
-
Logic
21nC
-/4.8µs
300V, 6.5A, 1 kOhm, 5V
-
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
IXGP30N60C2
IXYS

IGBT 600V 70A 190W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
  • Power - Max: 190W
  • Switching Energy: 190µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 13ns/70ns
  • Test Condition: 400V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,360
600V
70A
150A
2.7V @ 15V, 24A
190W
190µJ (off)
Standard
70nC
13ns/70ns
400V, 24A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot SGW23N60UFDTM
Fairchild/ON Semiconductor

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 115µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: 17ns/60ns
  • Test Condition: 300V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고19,200
600V
23A
92A
2.6V @ 15V, 12A
100W
115µJ (on), 135µJ (off)
Standard
49nC
17ns/60ns
300V, 12A, 23 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGR72N60A3H1
IXYS

IGBT 600V 75A 200W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 60A
  • Power - Max: 200W
  • Switching Energy: 1.4mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 31ns/320ns
  • Test Condition: 480V, 50A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고4,928
600V
75A
400A
1.45V @ 15V, 60A
200W
1.4mJ (on), 3.5mJ (off)
Standard
230nC
31ns/320ns
480V, 50A, 3 Ohm, 15V
140ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
STGW35NC120HD
STMicroelectronics

IGBT 1200V 60A 235W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 135A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
  • Power - Max: 235W
  • Switching Energy: 1.66mJ (on), 4.44mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 29ns/275ns
  • Test Condition: 960V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 152ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고4,400
1200V
60A
135A
2.75V @ 15V, 20A
235W
1.66mJ (on), 4.44mJ (off)
Standard
110nC
29ns/275ns
960V, 20A, 10 Ohm, 15V
152ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXGH36N60B3D1
IXYS

IGBT 600V 250W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 540µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 19ns/125ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고2,112
600V
-
200A
1.8V @ 15V, 30A
250W
540µJ (on), 800µJ (off)
Standard
80nC
19ns/125ns
400V, 30A, 5 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
NGTB75N60SWG
ON Semiconductor

IGBT 75A 600V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 595W
  • Switching Energy: 1.5mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 110ns/270ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고4,832
600V
100A
200A
2V @ 15V, 75A
595W
1.5mJ (on), 1mJ (off)
Standard
310nC
110ns/270ns
400V, 75A, 10 Ohm, 15V
80ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
RJP60D0DPK-00#T0
Renesas Electronics America

IGBT 600V 45A 140W TO-3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
  • Power - Max: 140W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 35ns/90ns
  • Test Condition: 300V, 22A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고7,360
600V
45A
-
2.2V @ 15V, 22A
140W
-
Standard
45nC
35ns/90ns
300V, 22A, 5 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXGH12N120A2D1
IXYS

IGBT 1200V 12A TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고2,976
1200V
12A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
STGF3HF60HD
STMicroelectronics

IGBT 600V 7.5A TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7.5A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.95V @ 15V, 1.5A
  • Power - Max: 18W
  • Switching Energy: 19µJ (on), 12µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 11ns/60ns
  • Test Condition: 400V, 1.5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
패키지: TO-220-3 Full Pack
재고3,552
600V
7.5A
18A
2.95V @ 15V, 1.5A
18W
19µJ (on), 12µJ (off)
Standard
12nC
11ns/60ns
400V, 1.5A, 100 Ohm, 15V
85ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220FP
IKP15N60TXKSA1
Infineon Technologies

IGBT 600V 30A 130W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 130W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 17ns/188ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고4,848
600V
30A
45A
2.05V @ 15V, 15A
130W
570µJ
Standard
87nC
17ns/188ns
400V, 15A, 15 Ohm, 15V
34ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot FGH40N60SMDF
Fairchild/ON Semiconductor

IGBT 600V 80A 349W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 349W
  • Switching Energy: 1.3mJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 119nC
  • Td (on/off) @ 25°C: 12ns/92ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고9,972
600V
80A
120A
2.5V @ 15V, 40A
349W
1.3mJ (on), 260µJ (off)
Standard
119nC
12ns/92ns
400V, 40A, 6 Ohm, 15V
90ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STGB14NC60KT4
STMicroelectronics

IGBT 600V 25A 80W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 25A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
  • Power - Max: 80W
  • Switching Energy: 82µJ (on), 155µJ (off)
  • Input Type: Standard
  • Gate Charge: 34.4nC
  • Td (on/off) @ 25°C: 22.5ns/116ns
  • Test Condition: 390V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고24,000
600V
25A
-
2.5V @ 15V, 7A
80W
82µJ (on), 155µJ (off)
Standard
34.4nC
22.5ns/116ns
390V, 7A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
APT50GT60BRG
Microsemi Corporation

IGBT 600V 110A 446W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 446W
  • Switching Energy: 995µJ (on), 1070µJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 14ns/240ns
  • Test Condition: 400V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고7,472
600V
110A
150A
2.5V @ 15V, 50A
446W
995µJ (on), 1070µJ (off)
Standard
240nC
14ns/240ns
400V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
STGWT40H65DFB
STMicroelectronics

IGBT 650V 80A 283W TO3P-3L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 283W
  • Switching Energy: 498µJ (on), 363µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 40ns/142ns
  • Test Condition: 400V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고13,416
650V
80A
160A
2V @ 15V, 40A
283W
498µJ (on), 363µJ (off)
Standard
210nC
40ns/142ns
400V, 40A, 5 Ohm, 15V
62ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot STGW30NC120HD
STMicroelectronics

IGBT 1200V 60A 220W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
  • Power - Max: 220W
  • Switching Energy: 1.66mJ (on), 4.44mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 29ns/275ns
  • Test Condition: 960V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 152ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고111,384
1200V
60A
-
2.75V @ 15V, 20A
220W
1.66mJ (on), 4.44mJ (off)
Standard
110nC
29ns/275ns
960V, 20A, 10 Ohm, 15V
152ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot ISL9V3040P3
Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고324,540
430V
21A
-
1.6V @ 4V, 6A
150W
-
Logic
17nC
-/4.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
SIGC12T60NCX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 10A, 27Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
21ns/110ns
300V, 10A, 27Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IXGM20N60A
IXYS

IGBT 600V 40A TO-204AE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 150 W
  • Switching Energy: 2mJ (on), 2mJ (off)
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 100ns/600ns
  • Test Condition: 480V, 20A, 82Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AE
  • Supplier Device Package: TO-204AE
패키지: -
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600 V
40 A
80 A
3V @ 15V, 20A
150 W
2mJ (on), 2mJ (off)
Standard
120 nC
100ns/600ns
480V, 20A, 82Ohm, 15V
200 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-204AE
TO-204AE
IXGA30N60C3
IXYS

IGBT 600V 60A 220W TO-263AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 220 W
  • Switching Energy: 270µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 38 nC
  • Td (on/off) @ 25°C: 16ns/42ns
  • Test Condition: 300V, 20A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 26 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
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600 V
60 A
150 A
3V @ 15V, 20A
220 W
270µJ (on), 90µJ (off)
Standard
38 nC
16ns/42ns
300V, 20A, 5Ohm, 15V
26 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IXYX300N65A3
IXYS

DISC IGBT XPT-GENX3 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 600 A
  • Current - Collector Pulsed (Icm): 1460 A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
  • Power - Max: 2300 W
  • Switching Energy: 7.8mJ (on), 4.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 565 nC
  • Td (on/off) @ 25°C: 42ns/190ns
  • Test Condition: 400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 125 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
패키지: -
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650 V
600 A
1460 A
1.6V @ 15V, 100A
2300 W
7.8mJ (on), 4.7mJ (off)
Standard
565 nC
42ns/190ns
400V, 100A, 1Ohm, 15V
125 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
PLUS247™-3
STGB20N45LZAG
STMicroelectronics

POWER TRANSISTORS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 450 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 26 nC
  • Td (on/off) @ 25°C: 1.1µs/4.6µs
  • Test Condition: 300V, 10A, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
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450 V
25 A
50 A
1.25V @ 4V, 6A
150 W
-
Logic
26 nC
1.1µs/4.6µs
300V, 10A, 1kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IHW25N120R2FKSA1
Infineon Technologies

IGBT 1200V 50A 365W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
  • Power - Max: 365 W
  • Switching Energy: 1.59mJ
  • Input Type: Standard
  • Gate Charge: 60.7 nC
  • Td (on/off) @ 25°C: -/324ns
  • Test Condition: 600V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
패키지: -
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1200 V
50 A
75 A
1.8V @ 15V, 25A
365 W
1.59mJ
Standard
60.7 nC
-/324ns
600V, 25A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
IRG4CC50WC
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 27 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 33 ns
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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600 V
27 A
-
-
-
-
Standard
-
-
-
33 ns
-55°C ~ 150°C
Surface Mount
Die
Die
FGHL40T65LQDT
onsemi

IGBT TRENCH FS 650V 60A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 40A
  • Power - Max: 273 W
  • Switching Energy: 620µJ (on), 1.03mJ (off)
  • Input Type: Standard
  • Gate Charge: 414 nC
  • Td (on/off) @ 25°C: 24ns/364ns
  • Test Condition: 400V, 20A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 84 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: -
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650 V
60 A
160 A
1.35V @ 15V, 40A
273 W
620µJ (on), 1.03mJ (off)
Standard
414 nC
24ns/364ns
400V, 20A, 4.7Ohm, 15V
84 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXYT40N120A4HV
IXYS

IGBT PT 1200V 140A TO268HV

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): 275 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
  • Power - Max: 600 W
  • Switching Energy: 2.3mJ (on), 3.75mJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 22ns/204ns
  • Test Condition: 600V, 32A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268HV (IXYT)
패키지: -
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1200 V
140 A
275 A
1.8V @ 15V, 32A
600 W
2.3mJ (on), 3.75mJ (off)
Standard
90 nC
22ns/204ns
600V, 32A, 5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268HV (IXYT)
RGWX5TS65GC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 132A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 132 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
  • Power - Max: 348 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 213 nC
  • Td (on/off) @ 25°C: 64ns/229ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고1,350
650 V
132 A
300 A
1.9V @ 15V, 75A
348 W
-
Standard
213 nC
64ns/229ns
400V, 75A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N