페이지 4 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  4/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PH50U-EP
Infineon Technologies

IGBT 1200V ULTRA FAST TO247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 556W
  • Switching Energy: 4.6mJ (on), 3.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 440nC
  • Td (on/off) @ 25°C: 35ns/430ns
  • Test Condition: 600V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247AD
패키지: TO-247-3
재고3,392
1200V
140A
150A
2V @ 15V, 50A
556W
4.6mJ (on), 3.2mJ (off)
Standard
440nC
35ns/430ns
600V, 50A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247AD
IRG8P40N120KD-EPBF
Infineon Technologies

IGBT 1200V 60A 305W TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
  • Power - Max: 305W
  • Switching Energy: 1.6mJ (on), 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 40ns/245ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고3,968
1200V
60A
75A
2V @ 15V, 25A
305W
1.6mJ (on), 1.8mJ (off)
Standard
240nC
40ns/245ns
600V, 25A, 10 Ohm, 15V
80ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IKD04N60RF
Infineon Technologies

IGBT 600V 8A 75W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 110µJ
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 12ns/116ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,104
600V
8A
12A
2.5V @ 15V, 4A
75W
110µJ
Standard
27nC
12ns/116ns
400V, 4A, 43 Ohm, 15V
34ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKA03N120H2XKSA1
Infineon Technologies

IGBT 1200V 8.2A 29W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 8.2A
  • Current - Collector Pulsed (Icm): 9A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 29W
  • Switching Energy: 290µJ
  • Input Type: Standard
  • Gate Charge: 8.6nC
  • Td (on/off) @ 25°C: 9.2ns/281ns
  • Test Condition: 800V, 3A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): 52ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3 Full Pack
재고7,760
1200V
8.2A
9A
2.8V @ 15V, 3A
29W
290µJ
Standard
8.6nC
9.2ns/281ns
800V, 3A, 82 Ohm, 15V
52ns
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3
IXSK40N60BD1
IXYS

IGBT 600V 75A 280W TO264

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 280W
  • Switching Energy: 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 50ns/110ns
  • Test Condition: 480V, 40A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264AA(IXSK)
패키지: TO-264-3, TO-264AA
재고6,176
600V
75A
150A
2.2V @ 15V, 40A
280W
1.8mJ (off)
Standard
190nC
50ns/110ns
480V, 40A, 2.7 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264AA(IXSK)
IXGT40N60C2D1
IXYS

IGBT 600V 75A 300W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 300W
  • Switching Energy: 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 18ns/90ns
  • Test Condition: 400V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,024
600V
75A
200A
2.7V @ 15V, 30A
300W
200µJ (off)
Standard
95nC
18ns/90ns
400V, 30A, 3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
NGB8202NT4
ON Semiconductor

IGBT 440V 20A 150W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/5µs
  • Test Condition: 300V, 9A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고2,256
440V
20A
50A
1.9V @ 4.5V, 20A
150W
-
Logic
-
-/5µs
300V, 9A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot SGP13N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 13A 60W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 85µJ (on), 95µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 20ns/70ns
  • Test Condition: 300V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고36,000
600V
13A
52A
2.6V @ 15V, 6.5A
60W
85µJ (on), 95µJ (off)
Standard
25nC
20ns/70ns
300V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
IXBT24N170
IXYS

IGBT 1700V 60A 250W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 230A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.06µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고6,848
1700V
60A
230A
2.5V @ 15V, 24A
250W
-
Standard
140nC
-
-
1.06µs
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
hot IXDH20N120
IXYS

IGBT 1200V 38A 200W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 38A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 3.1mJ (on), 2.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 20A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247AD
패키지: TO-3P-3 Full Pack
재고6,640
1200V
38A
50A
3V @ 15V, 20A
200W
3.1mJ (on), 2.4mJ (off)
Standard
70nC
-
600V, 20A, 82 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-247AD
IXGR35N120D1
IXYS

IGBT 1200V ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고6,144
1200V
-
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
IXA12IF1200PB
IXYS

IGBT 1200V 20A 85W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 85W
  • Switching Energy: 1.1mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 10A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,872
1200V
20A
-
2.1V @ 15V, 10A
85W
1.1mJ (on), 1.1mJ (off)
Standard
27nC
-
600V, 10A, 100 Ohm, 15V
350ns
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
GPA015A120MN-ND
Global Power Technologies Group

IGBT 1200V 30A 212W TO3PN

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 212W
  • Switching Energy: 1.61mJ (on), 530µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 25ns/166ns
  • Test Condition: 600V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 320ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고7,424
1200V
30A
45A
2.5V @ 15V, 15A
212W
1.61mJ (on), 530µJ (off)
Standard
210nC
25ns/166ns
600V, 15A, 10 Ohm, 15V
320ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
hot NGB18N40ACLBT4G
Littelfuse Inc.

IGBT 430V 18A 115W D2PAK3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 4V, 15A
  • Power - Max: 115W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고196,716
430V
18A
50A
2.5V @ 4V, 15A
115W
-
Logic
-
-
-
-
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IHW40N135R3FKSA1
Infineon Technologies

IGBT 1350V 80A 429W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
  • Power - Max: 429W
  • Switching Energy: 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 365nC
  • Td (on/off) @ 25°C: -/343ns
  • Test Condition: 600V, 40A, 7.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,440
1350V
80A
120A
1.85V @ 15V, 40A
429W
2.5mJ (off)
Standard
365nC
-/343ns
600V, 40A, 7.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
FGA40S65SH
Fairchild/ON Semiconductor

650V FS GEN3 TRENCH IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.81V @ 15V, 40A
  • Power - Max: 268W
  • Switching Energy: 194µJ (on), 388µJ (off)
  • Input Type: Standard
  • Gate Charge: 73nC
  • Td (on/off) @ 25°C: 19.2ns/68.8ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
패키지: TO-3P-3, SC-65-3
재고8,724
650V
80A
120A
1.81V @ 15V, 40A
268W
194µJ (on), 388µJ (off)
Standard
73nC
19.2ns/68.8ns
400V, 40A, 6 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
STGP5H60DF
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT, H S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
  • Power - Max: 88W
  • Switching Energy: 56µJ (on), 78.5µJ (off)
  • Input Type: Standard
  • Gate Charge: 43nC
  • Td (on/off) @ 25°C: 30ns/140ns
  • Test Condition: 400V, 5A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 134.5ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고13,782
600V
10A
20A
1.95V @ 15V, 5A
88W
56µJ (on), 78.5µJ (off)
Standard
43nC
30ns/140ns
400V, 5A, 47 Ohm, 15V
134.5ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
RGTVX2TS65DGC11
Rohm Semiconductor

IGBT TRENCH FS 650V 111A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 111 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
  • Power - Max: 319 W
  • Switching Energy: 2.08mJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 123 nC
  • Td (on/off) @ 25°C: 49ns/150ns
  • Test Condition: 400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고222
650 V
111 A
240 A
1.9V @ 15V, 60A
319 W
2.08mJ (on), 1.15mJ (off)
Standard
123 nC
49ns/150ns
400V, 60A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
FGD3040G2_SN00297
onsemi

INTEGRATED CIRCUIT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 6.5A, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: -
Request a Quote
400 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
-/4.8µs
300V, 6.5A, 1kOhm, 5V
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
RGWS80TS65DGC13
Rohm Semiconductor

IGBT TRENCH FS 650V 71A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 71 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 202 W
  • Switching Energy: 700µJ (on), 660µJ (off)
  • Input Type: Standard
  • Gate Charge: 83 nC
  • Td (on/off) @ 25°C: 40ns/114ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 88 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
패키지: -
재고1,800
650 V
71 A
120 A
2V @ 15V, 40A
202 W
700µJ (on), 660µJ (off)
Standard
83 nC
40ns/114ns
400V, 40A, 10Ohm, 15V
88 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G
ISL9V5036S3ST_SB82170
onsemi

INTEGRATED CIRCUIT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390 V
  • Current - Collector (Ic) (Max): 46 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 250 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32 nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
Request a Quote
390 V
46 A
-
1.6V @ 4V, 10A
250 W
-
Logic
32 nC
-/10.8µs
300V, 1kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
RGTV60TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 60A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 194 W
  • Switching Energy: 570µJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 64 nC
  • Td (on/off) @ 25°C: 33ns/105ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 95 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
Request a Quote
650 V
60 A
120 A
1.9V @ 15V, 30A
194 W
570µJ (on), 500µJ (off)
Standard
64 nC
33ns/105ns
400V, 30A, 10Ohm, 15V
95 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGW80NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 83A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 83 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 227 W
  • Switching Energy: 240µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 42ns/148ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고3,000
650 V
83 A
160 A
1.9V @ 15V, 40A
227 W
240µJ (on), 330µJ (off)
Standard
110 nC
42ns/148ns
400V, 20A, 10Ohm, 15V
92 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
IGTH20N50
Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-218-3 Isolated Tab, TO-218AC
  • Supplier Device Package: TO-218 Isolated
패키지: -
Request a Quote
500 V
20 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-218-3 Isolated Tab, TO-218AC
TO-218 Isolated
IXYH30N120C4
IXYS

DISC IGBT XPT-GENX4 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 94 A
  • Current - Collector Pulsed (Icm): 166 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 500 W
  • Switching Energy: 4.8mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 57 nC
  • Td (on/off) @ 25°C: 18ns/205ns
  • Test Condition: 960V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: -
Request a Quote
1200 V
94 A
166 A
2.4V @ 15V, 25A
500 W
4.8mJ (on), 1.5mJ (off)
Standard
57 nC
18ns/205ns
960V, 25A, 5Ohm, 15V
58 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
RGC80TSX8RGC11
Rohm Semiconductor

IGBT TRENCH FLD 1800V 80A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1800 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
  • Power - Max: 535 W
  • Switching Energy: 1.85mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 468 nC
  • Td (on/off) @ 25°C: 80ns/565ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
패키지: -
재고30
1800 V
80 A
120 A
5V @ 15V, 40A
535 W
1.85mJ (on), 1.6mJ (off)
Standard
468 nC
80ns/565ns
600V, 40A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RJP30Y2ADPP-M9-T2F
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKFW50N60ETXKSA1
Infineon Technologies

IGBT TRENCH FS 600V 73A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 73 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 164 W
  • Switching Energy: 1.5mJ (on), 1.42mJ (off)
  • Input Type: Standard
  • Gate Charge: 290 nC
  • Td (on/off) @ 25°C: 28ns/305ns
  • Test Condition: 400V, 50A, 7Ohm, 15V
  • Reverse Recovery Time (trr): 91 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
패키지: -
재고720
600 V
73 A
150 A
2V @ 15V, 50A
164 W
1.5mJ (on), 1.42mJ (off)
Standard
290 nC
28ns/305ns
400V, 50A, 7Ohm, 15V
91 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-AI