페이지 7 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

IRGI4086PBF

Infineon Technologies

IGBT 300V 25A 43W TO220AB

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 25A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
Power - Max: 43W
Switching Energy: -
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 36ns/112ns
Test Condition: 196V, 25A, 10 Ohm
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak

패키지: TO-220-3 Full Pack

재고18,612

300V

25A

-

2.96V @ 15V, 120A

43W

-

Standard

65nC

36ns/112ns

196V, 25A, 10 Ohm

-

-40°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220AB Full-Pak

IRG4BC30K-STRRP

Infineon Technologies

IGBT 600V 28A 100W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 56A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Power - Max: 100W
Switching Energy: 360µJ (on), 510µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 26ns/130ns
Test Condition: 480V, 16A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고61,848

600V

28A

56A

2.7V @ 15V, 16A

100W

360µJ (on), 510µJ (off)

Standard

67nC

26ns/130ns

480V, 16A, 23 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

IRG4IBC30S

Infineon Technologies

IGBT 600V 23.5A 45W TO220FP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 23.5A
Current - Collector Pulsed (Icm): 68A
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Power - Max: 45W
Switching Energy: 260µJ (on), 3.45mJ (off)
Input Type: Standard
Gate Charge: 50nC
Td (on/off) @ 25°C: 22ns/540ns
Test Condition: 480V, 18A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak

패키지: TO-220-3 Full Pack

재고159,948

600V

23.5A

68A

1.6V @ 15V, 18A

45W

260µJ (on), 3.45mJ (off)

Standard

50nC

22ns/540ns

480V, 18A, 23 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3 Full Pack

TO-220AB Full-Pak

IXSH30N60U1

IXYS

IGBT 600V 50A 200W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Power - Max: 200W
Switching Energy: 2.5mJ (off)
Input Type: Standard
Gate Charge: 110nC
Td (on/off) @ 25°C: 60ns/400ns
Test Condition: 480V, 30A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXSH)

패키지: TO-247-3

재고423,624

600V

50A

100A

2.5V @ 15V, 30A

200W

2.5mJ (off)

Standard

110nC

60ns/400ns

480V, 30A, 4.7 Ohm, 15V

50ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXSH)

IXEH40N120D1

IXYS

IGBT 1200V 60A 300W TO247AD

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Power - Max: 300W
Switching Energy: 6.1mJ (on), 3mJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 40A, 39 Ohm, 15V
Reverse Recovery Time (trr): 180ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD

패키지: TO-3P-3 Full Pack

재고5,232

1200V

60A

-

3V @ 15V, 40A

300W

6.1mJ (on), 3mJ (off)

Standard

150nC

-

600V, 40A, 39 Ohm, 15V

180ns

-55°C ~ 150°C (TJ)

Through Hole

TO-3P-3 Full Pack

TO-247AD

IGB15N65S5ATMA1

Infineon Technologies

IGBT PRODUCTS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,408

-

IXXK200N60C3

IXYS

IGBT 600V 340A 1630W TO264

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 340A
Current - Collector Pulsed (Icm): 900A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Power - Max: 1630W
Switching Energy: 3mJ (on), 1.7mJ (off)
Input Type: Standard
Gate Charge: 315nC
Td (on/off) @ 25°C: 47ns/125ns
Test Condition: 360V, 100A, 1 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXXK)

패키지: TO-264-3, TO-264AA

재고6,496

600V

340A

900A

2.1V @ 15V, 100A

1630W

3mJ (on), 1.7mJ (off)

Standard

315nC

47ns/125ns

360V, 100A, 1 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264 (IXXK)

IXYL40N250CV1

IXYS

IGBT 2.5KV 70A ISOPLUSI5-PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 400A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Power - Max: 577W
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Input Type: Standard
Gate Charge: 270nC
Td (on/off) @ 25°C: 21ns/200ns
Test Condition: 1250V, 40A, 1 Ohm, 15V
Reverse Recovery Time (trr): 210ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak?
Supplier Device Package: ISOPLUSi5-Pak?

패키지: ISOPLUSi5-Pak?

재고4,976

2500V

70A

400A

4V @ 15V, 40A

577W

11.7mJ (on), 6.9mJ (off)

Standard

270nC

21ns/200ns

1250V, 40A, 1 Ohm, 15V

210ns

-55°C ~ 175°C (TJ)

Through Hole

ISOPLUSi5-Pak?

IXBH16N170A

IXYS

IGBT 1700V 16A 150W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1700V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 40A
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Power - Max: 150W
Switching Energy: 1.2mJ (off)
Input Type: Standard
Gate Charge: 65nC
Td (on/off) @ 25°C: 15ns/160ns
Test Condition: 1360V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr): 360ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)

패키지: TO-247-3

재고4,800

1700V

16A

40A

6V @ 15V, 10A

150W

1.2mJ (off)

Standard

65nC

15ns/160ns

1360V, 10A, 10 Ohm, 15V

360ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXBH)

IXXX110N65B4H1

IXYS

IGBT 650V 240A 880W PLUS247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 240A
Current - Collector Pulsed (Icm): 630A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Power - Max: 880W
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Input Type: Standard
Gate Charge: 183nC
Td (on/off) @ 25°C: 38ns/156ns
Test Condition: 400V, 55A, 2 Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PLUS247?-3

패키지: TO-247-3

재고4,848

650V

240A

630A

2.1V @ 15V, 110A

880W

2.2mJ (on), 1.05mJ (off)

Standard

183nC

38ns/156ns

400V, 55A, 2 Ohm, 15V

100ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

PLUS247?-3

STGW25M120DF3

STMicroelectronics

IGBT 1200V 50A 375W

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Power - Max: 375W
Switching Energy: 850µJ (on), 1.3mJ (off)
Input Type: Standard
Gate Charge: 85nC
Td (on/off) @ 25°C: 28ns/150ns
Test Condition: 600V, 25A, 15 Ohm, 15V
Reverse Recovery Time (trr): 265ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고8,172

1200V

50A

100A

2.3V @ 15V, 25A

375W

850µJ (on), 1.3mJ (off)

Standard

85nC

28ns/150ns

600V, 25A, 15 Ohm, 15V

265ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

IRGB4630DPBF

Infineon Technologies

IGBT 600V 47A 206W TO220

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 47A
Current - Collector Pulsed (Icm): 54A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Power - Max: 206W
Switching Energy: 95µJ (on), 350µJ (off)
Input Type: Standard
Gate Charge: 35nC
Td (on/off) @ 25°C: 40ns/105ns
Test Condition: 400V, 18A, 22 Ohm, 15V
Reverse Recovery Time (trr): 100ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AC

패키지: TO-220-3

재고7,368

600V

47A

54A

1.95V @ 15V, 18A

206W

95µJ (on), 350µJ (off)

Standard

35nC

40ns/105ns

400V, 18A, 22 Ohm, 15V

100ns

-40°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220AC

IRG7PH50UPBF

Infineon Technologies

IGBT 1200V 140A 556W TO247AC

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 556W
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Input Type: Standard
Gate Charge: 290nC
Td (on/off) @ 25°C: 35ns/430ns
Test Condition: 600V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고6,240

1200V

140A

150A

2V @ 15V, 50A

556W

3.6mJ (on), 2.2mJ (off)

Standard

290nC

35ns/430ns

600V, 50A, 5 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AC

SIGC12T60SNCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): 30 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

10 A

30 A

2.5V @ 15V, 10A

-

Standard

-

29ns/266ns

400V, 10A, 25Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

LGD8201ATI

Littelfuse Inc.

IGBT 440V 20A TO252

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 50 A
Vce(on) (Max) @ Vge, Ic: -
Power - Max: 125 W
Switching Energy: -
Input Type: Logic
Gate Charge: -
Td (on/off) @ 25°C: 1.5µs/8µs
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)

패키지: -

Request a Quote

440 V

20 A

50 A

-

125 W

-

Logic

-

1.5µs/8µs

-

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

HGTP3N60B3

Harris Corporation

7A, 600V, UFS N-CHANNEL IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7 A
Current - Collector Pulsed (Icm): 20 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
Power - Max: 33.3 W
Switching Energy: 66µJ (on), 88µJ (off)
Input Type: Standard
Gate Charge: 21 nC
Td (on/off) @ 25°C: 18ns/105ns
Test Condition: 480V, 3.5A, 82Ohm, 15V
Reverse Recovery Time (trr): 16 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220

패키지: -

Request a Quote

600 V

7 A

20 A

2.1V @ 15V, 3.5A

33.3 W

66µJ (on), 88µJ (off)

Standard

21 nC

18ns/105ns

480V, 3.5A, 82Ohm, 15V

16 ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220

DF400R07W2S5FB77BPSA1

Infineon Technologies

LOW POWER EASY

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

HGTG40N60C3

Harris Corporation

75A, 600V, N-CHANNEL IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Power - Max: 291 W
Switching Energy: 850mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 395 nC
Td (on/off) @ 25°C: 47ns/185ns
Test Condition: 480V, 40A, 3Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: -

Request a Quote

600 V

75 A

300 A

1.8V @ 15V, 40A

291 W

850mJ (on), 1mJ (off)

Standard

395 nC

47ns/185ns

480V, 40A, 3Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

RGCL60TS60GC11

Rohm Semiconductor

IGBT TRNCH FIELD 600V 48A TO247N

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Power - Max: 111 W
Switching Energy: 770µJ (on), 1.11mJ (off)
Input Type: Standard
Gate Charge: 68 nC
Td (on/off) @ 25°C: 44ns/186ns
Test Condition: 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247N

패키지: -

재고1,089

600 V

48 A

120 A

1.8V @ 15V, 30A

111 W

770µJ (on), 1.11mJ (off)

Standard

68 nC

44ns/186ns

400V, 30A, 10Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247N

NCG100F475NF120

onsemi

IGBT 500V 100A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FGPF70N30TRDTU

Fairchild Semiconductor

IGBT 300V 70A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

AUXKNG4PH50S-215

Infineon Technologies

IGBT 1200V TO247-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IRG4BC40UPBF-INF

Infineon Technologies

ULTRAFAST SPEED IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MIW50N65F-BP

Micro Commercial Co

IGBT 650V 40A TO-247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Power - Max: 326 W
Switching Energy: 1.27mJ (on), 650µJ (off)
Input Type: Standard
Gate Charge: 450 nC
Td (on/off) @ 25°C: 55ns/319ns
Test Condition: 300V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AB

패키지: -

Request a Quote

650 V

85 A

200 A

1.95V @ 15V, 50A

326 W

1.27mJ (on), 650µJ (off)

Standard

450 nC

55ns/319ns

300V, 50A, 10Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AB

HGT1S7N60B3D

Harris Corporation

IGBT 600V 14A TO262

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Current - Collector Pulsed (Icm): 56 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
Power - Max: 60 W
Switching Energy: 160µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 30 nC
Td (on/off) @ 25°C: 26ns/130ns
Test Condition: 480V, 7A, 50Ohm, 15V
Reverse Recovery Time (trr): 21 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package: TO-262 (I2PAK)

패키지: -

Request a Quote

600 V

14 A

56 A

2.1V @ 15V, 7A

60 W

160µJ (on), 120µJ (off)

Standard

30 nC

26ns/130ns

480V, 7A, 50Ohm, 15V

21 ns

-55°C ~ 150°C (TJ)

Through Hole

TO-262-3 Long Leads, I2PAK, TO-262AA

TO-262 (I2PAK)

RGPR10BM40FHTL

Rohm Semiconductor

IGBT 460V 20A TO252

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 460 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
Power - Max: 107 W
Switching Energy: -
Input Type: Standard
Gate Charge: 14 nC
Td (on/off) @ 25°C: 500ns/4µs
Test Condition: 300V, 8A, 100Ohm, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 75°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252

패키지: -

Request a Quote

460 V

20 A

-

2.0V @ 5V, 10A

107 W

-

Standard

14 nC

500ns/4µs

300V, 8A, 100Ohm, 5V

-

-40°C ~ 75°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252

STGWA35IH135DF2

STMicroelectronics

IGBT TRENCH FS 1.35KV 70A TO247

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 70 A
Current - Collector Pulsed (Icm): 140 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Power - Max: 416 W
Switching Energy: 1.6mJ (off)
Input Type: Standard
Gate Charge: 258 nC
Td (on/off) @ 25°C: -
Test Condition: 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads

패키지: -

재고285

1350 V

70 A

140 A

2.2V @ 15V, 30A

416 W

1.6mJ (off)

Standard

258 nC

-

600V, 30A, 10Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247 Long Leads

SIGC15T60EX1SA4

Infineon Technologies

IGBT TRENCH FS 600V 30A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

30 A

90 A

1.9V @ 15V, 30A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRGI4086PBF	Infineon Technologies	IGBT 300V 25A 43W TO220AB IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 25A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A Power - Max: 43W Switching Energy: - Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 36ns/112ns Test Condition: 196V, 25A, 10 Ohm Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	패키지: TO-220-3 Full Pack	재고18,612	300V	25A	-	2.96V @ 15V, 120A	43W	-	Standard	65nC	36ns/112ns	196V, 25A, 10 Ohm	-	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
IRG4BC30K-STRRP	Infineon Technologies	IGBT 600V 28A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 56A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 360µJ (on), 510µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고61,848	600V	28A	56A	2.7V @ 15V, 16A	100W	360µJ (on), 510µJ (off)	Standard	67nC	26ns/130ns	480V, 16A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRG4IBC30S	Infineon Technologies	IGBT 600V 23.5A 45W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23.5A Current - Collector Pulsed (Icm): 68A Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Power - Max: 45W Switching Energy: 260µJ (on), 3.45mJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 22ns/540ns Test Condition: 480V, 18A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	패키지: TO-220-3 Full Pack	재고159,948	600V	23.5A	68A	1.6V @ 15V, 18A	45W	260µJ (on), 3.45mJ (off)	Standard	50nC	22ns/540ns	480V, 18A, 23 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220AB Full-Pak
IXSH30N60U1	IXYS	IGBT 600V 50A 200W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Power - Max: 200W Switching Energy: 2.5mJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 60ns/400ns Test Condition: 480V, 30A, 4.7 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXSH)	패키지: TO-247-3	재고423,624	600V	50A	100A	2.5V @ 15V, 30A	200W	2.5mJ (off)	Standard	110nC	60ns/400ns	480V, 30A, 4.7 Ohm, 15V	50ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXSH)
IXEH40N120D1	IXYS	IGBT 1200V 60A 300W TO247AD IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A Power - Max: 300W Switching Energy: 6.1mJ (on), 3mJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: - Test Condition: 600V, 40A, 39 Ohm, 15V Reverse Recovery Time (trr): 180ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247AD	패키지: TO-3P-3 Full Pack	재고5,232	1200V	60A	-	3V @ 15V, 40A	300W	6.1mJ (on), 3mJ (off)	Standard	150nC	-	600V, 40A, 39 Ohm, 15V	180ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-247AD
IGB15N65S5ATMA1	Infineon Technologies	IGBT PRODUCTS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,408	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXXK200N60C3	IXYS	IGBT 600V 340A 1630W TO264 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 340A Current - Collector Pulsed (Icm): 900A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Power - Max: 1630W Switching Energy: 3mJ (on), 1.7mJ (off) Input Type: Standard Gate Charge: 315nC Td (on/off) @ 25°C: 47ns/125ns Test Condition: 360V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXXK)	패키지: TO-264-3, TO-264AA	재고6,496	600V	340A	900A	2.1V @ 15V, 100A	1630W	3mJ (on), 1.7mJ (off)	Standard	315nC	47ns/125ns	360V, 100A, 1 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 (IXXK)
IXYL40N250CV1	IXYS	IGBT 2.5KV 70A ISOPLUSI5-PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 400A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Power - Max: 577W Switching Energy: 11.7mJ (on), 6.9mJ (off) Input Type: Standard Gate Charge: 270nC Td (on/off) @ 25°C: 21ns/200ns Test Condition: 1250V, 40A, 1 Ohm, 15V Reverse Recovery Time (trr): 210ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUSi5-Pak? Supplier Device Package: ISOPLUSi5-Pak?	패키지: ISOPLUSi5-Pak?	재고4,976	2500V	70A	400A	4V @ 15V, 40A	577W	11.7mJ (on), 6.9mJ (off)	Standard	270nC	21ns/200ns	1250V, 40A, 1 Ohm, 15V	210ns	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUSi5-Pak?	ISOPLUSi5-Pak?
IXBH16N170A	IXYS	IGBT 1700V 16A 150W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1700V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A Power - Max: 150W Switching Energy: 1.2mJ (off) Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 15ns/160ns Test Condition: 1360V, 10A, 10 Ohm, 15V Reverse Recovery Time (trr): 360ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXBH)	패키지: TO-247-3	재고4,800	1700V	16A	40A	6V @ 15V, 10A	150W	1.2mJ (off)	Standard	65nC	15ns/160ns	1360V, 10A, 10 Ohm, 15V	360ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXBH)
IXXX110N65B4H1	IXYS	IGBT 650V 240A 880W PLUS247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 240A Current - Collector Pulsed (Icm): 630A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Power - Max: 880W Switching Energy: 2.2mJ (on), 1.05mJ (off) Input Type: Standard Gate Charge: 183nC Td (on/off) @ 25°C: 38ns/156ns Test Condition: 400V, 55A, 2 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PLUS247?-3	패키지: TO-247-3	재고4,848	650V	240A	630A	2.1V @ 15V, 110A	880W	2.2mJ (on), 1.05mJ (off)	Standard	183nC	38ns/156ns	400V, 55A, 2 Ohm, 15V	100ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	PLUS247?-3
STGW25M120DF3	STMicroelectronics	IGBT 1200V 50A 375W IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A Power - Max: 375W Switching Energy: 850µJ (on), 1.3mJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 28ns/150ns Test Condition: 600V, 25A, 15 Ohm, 15V Reverse Recovery Time (trr): 265ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고8,172	1200V	50A	100A	2.3V @ 15V, 25A	375W	850µJ (on), 1.3mJ (off)	Standard	85nC	28ns/150ns	600V, 25A, 15 Ohm, 15V	265ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRGB4630DPBF	Infineon Technologies	IGBT 600V 47A 206W TO220 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 47A Current - Collector Pulsed (Icm): 54A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Power - Max: 206W Switching Energy: 95µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 40ns/105ns Test Condition: 400V, 18A, 22 Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AC	패키지: TO-220-3	재고7,368	600V	47A	54A	1.95V @ 15V, 18A	206W	95µJ (on), 350µJ (off)	Standard	35nC	40ns/105ns	400V, 18A, 22 Ohm, 15V	100ns	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AC
IRG7PH50UPBF	Infineon Technologies	IGBT 1200V 140A 556W TO247AC IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 556W Switching Energy: 3.6mJ (on), 2.2mJ (off) Input Type: Standard Gate Charge: 290nC Td (on/off) @ 25°C: 35ns/430ns Test Condition: 600V, 50A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고6,240	1200V	140A	150A	2V @ 15V, 50A	556W	3.6mJ (on), 2.2mJ (off)	Standard	290nC	35ns/430ns	600V, 50A, 5 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AC
SIGC12T60SNCX1SA3	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 10 A Current - Collector Pulsed (Icm): 30 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 29ns/266ns Test Condition: 400V, 10A, 25Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	10 A	30 A	2.5V @ 15V, 10A	-	-	Standard	-	29ns/266ns	400V, 10A, 25Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
LGD8201ATI	Littelfuse Inc.	IGBT 440V 20A TO252 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 50 A Vce(on) (Max) @ Vge, Ic: - Power - Max: 125 W Switching Energy: - Input Type: Logic Gate Charge: - Td (on/off) @ 25°C: 1.5µs/8µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK)	패키지: -	Request a Quote	440 V	20 A	50 A	-	125 W	-	Logic	-	1.5µs/8µs	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)
HGTP3N60B3	Harris Corporation	7A, 600V, UFS N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 7 A Current - Collector Pulsed (Icm): 20 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A Power - Max: 33.3 W Switching Energy: 66µJ (on), 88µJ (off) Input Type: Standard Gate Charge: 21 nC Td (on/off) @ 25°C: 18ns/105ns Test Condition: 480V, 3.5A, 82Ohm, 15V Reverse Recovery Time (trr): 16 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	패키지: -	Request a Quote	600 V	7 A	20 A	2.1V @ 15V, 3.5A	33.3 W	66µJ (on), 88µJ (off)	Standard	21 nC	18ns/105ns	480V, 3.5A, 82Ohm, 15V	16 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
DF400R07W2S5FB77BPSA1	Infineon Technologies	LOW POWER EASY IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HGTG40N60C3	Harris Corporation	75A, 600V, N-CHANNEL IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Power - Max: 291 W Switching Energy: 850mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 395 nC Td (on/off) @ 25°C: 47ns/185ns Test Condition: 480V, 40A, 3Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: -	Request a Quote	600 V	75 A	300 A	1.8V @ 15V, 40A	291 W	850mJ (on), 1mJ (off)	Standard	395 nC	47ns/185ns	480V, 40A, 3Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
RGCL60TS60GC11	Rohm Semiconductor	IGBT TRNCH FIELD 600V 48A TO247N IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 48 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 111 W Switching Energy: 770µJ (on), 1.11mJ (off) Input Type: Standard Gate Charge: 68 nC Td (on/off) @ 25°C: 44ns/186ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	패키지: -	재고1,089	600 V	48 A	120 A	1.8V @ 15V, 30A	111 W	770µJ (on), 1.11mJ (off)	Standard	68 nC	44ns/186ns	400V, 30A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247N
NCG100F475NF120	onsemi	IGBT 500V 100A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FGPF70N30TRDTU	Fairchild Semiconductor	IGBT 300V 70A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUXKNG4PH50S-215	Infineon Technologies	IGBT 1200V TO247-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG4BC40UPBF-INF	Infineon Technologies	ULTRAFAST SPEED IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MIW50N65F-BP	Micro Commercial Co	IGBT 650V 40A TO-247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 85 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A Power - Max: 326 W Switching Energy: 1.27mJ (on), 650µJ (off) Input Type: Standard Gate Charge: 450 nC Td (on/off) @ 25°C: 55ns/319ns Test Condition: 300V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AB	패키지: -	Request a Quote	650 V	85 A	200 A	1.95V @ 15V, 50A	326 W	1.27mJ (on), 650µJ (off)	Standard	450 nC	55ns/319ns	300V, 50A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AB
HGT1S7N60B3D	Harris Corporation	IGBT 600V 14A TO262 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 14 A Current - Collector Pulsed (Icm): 56 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Power - Max: 60 W Switching Energy: 160µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 30 nC Td (on/off) @ 25°C: 26ns/130ns Test Condition: 480V, 7A, 50Ohm, 15V Reverse Recovery Time (trr): 21 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Supplier Device Package: TO-262 (I2PAK)	패키지: -	Request a Quote	600 V	14 A	56 A	2.1V @ 15V, 7A	60 W	160µJ (on), 120µJ (off)	Standard	30 nC	26ns/130ns	480V, 7A, 50Ohm, 15V	21 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262 (I2PAK)
RGPR10BM40FHTL	Rohm Semiconductor	IGBT 460V 20A TO252 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 460 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A Power - Max: 107 W Switching Energy: - Input Type: Standard Gate Charge: 14 nC Td (on/off) @ 25°C: 500ns/4µs Test Condition: 300V, 8A, 100Ohm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 75°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	패키지: -	Request a Quote	460 V	20 A	-	2.0V @ 5V, 10A	107 W	-	Standard	14 nC	500ns/4µs	300V, 8A, 100Ohm, 5V	-	-40°C ~ 75°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252
STGWA35IH135DF2	STMicroelectronics	IGBT TRENCH FS 1.35KV 70A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector (Ic) (Max): 70 A Current - Collector Pulsed (Icm): 140 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 416 W Switching Energy: 1.6mJ (off) Input Type: Standard Gate Charge: 258 nC Td (on/off) @ 25°C: - Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads	패키지: -	재고285	1350 V	70 A	140 A	2.2V @ 15V, 30A	416 W	1.6mJ (off)	Standard	258 nC	-	600V, 30A, 10Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247 Long Leads
SIGC15T60EX1SA4	Infineon Technologies	IGBT TRENCH FS 600V 30A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 30 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	30 A	90 A	1.9V @ 15V, 30A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die