페이지 57 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  57/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SKB02N60E3266ATMA1
Infineon Technologies

IGBT 600V 6A 30W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
  • Power - Max: 30W
  • Switching Energy: 64µJ
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 20ns/259ns
  • Test Condition: 400V, 2A, 118 Ohm, 15V
  • Reverse Recovery Time (trr): 130ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,968
600V
6A
12A
2.4V @ 15V, 2A
30W
64µJ
Standard
14nC
20ns/259ns
400V, 2A, 118 Ohm, 15V
130ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
SGP30N60HSXKSA1
Infineon Technologies

IGBT 600V 41A 250W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 112A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 1.15mJ
  • Input Type: Standard
  • Gate Charge: 141nC
  • Td (on/off) @ 25°C: 20ns/250ns
  • Test Condition: 400V, 30A, 11 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
패키지: TO-220-3
재고2,784
600V
41A
112A
3.15V @ 15V, 30A
250W
1.15mJ
Standard
141nC
20ns/250ns
400V, 30A, 11 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot IRG4RC10UTRLPBF
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 80µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 19ns/116ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고249,216
600V
8.5A
34A
2.6V @ 15V, 5A
38W
80µJ (on), 160µJ (off)
Standard
15nC
19ns/116ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4BC20K
Infineon Technologies

IGBT 600V 16A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 32A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 150µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 34nC
  • Td (on/off) @ 25°C: 28ns/150ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고55,200
600V
16A
32A
2.8V @ 15V, 9A
60W
150µJ (on), 250µJ (off)
Standard
34nC
28ns/150ns
480V, 9A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGK60N60C2D1
IXYS

IGBT 600V 75A 480W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 480W
  • Switching Energy: 400µJ (on), 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 146nC
  • Td (on/off) @ 25°C: 18ns/95ns
  • Test Condition: 400V, 50A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
패키지: TO-264-3, TO-264AA
재고5,584
600V
75A
300A
2.5V @ 15V, 50A
480W
400µJ (on), 480µJ (off)
Standard
146nC
18ns/95ns
400V, 50A, 2 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264 (IXGK)
SGP40N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 40A 160W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 97nC
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 300V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: TO-220-3
재고6,000
600V
40A
160A
2.6V @ 15V, 20A
160W
160µJ (on), 200µJ (off)
Standard
97nC
15ns/65ns
300V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
IKD10N60RFAATMA1
Infineon Technologies

IGBT 600V 20A 150W PG-TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 190µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 12ns/168ns
  • Test Condition: 400V, 10A, 26 Ohm, 15V
  • Reverse Recovery Time (trr): 72ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,864
600V
20A
30A
2.5V @ 15V, 10A
150W
190µJ (on), 160µJ (off)
Standard
64nC
12ns/168ns
400V, 10A, 26 Ohm, 15V
72ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
APT50GN60BG
Microsemi Corporation

IGBT 600V 107A 366W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 107A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: 366W
  • Switching Energy: 1185µJ (on), 1565µJ (off)
  • Input Type: Standard
  • Gate Charge: 325nC
  • Td (on/off) @ 25°C: 20ns/230ns
  • Test Condition: 400V, 50A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고3,216
600V
107A
150A
1.85V @ 15V, 50A
366W
1185µJ (on), 1565µJ (off)
Standard
325nC
20ns/230ns
400V, 50A, 4.3 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
STGW60V60DLF
STMicroelectronics

IGBT BIPO 600V 60A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,528
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
APT85GR120L
Microsemi Corporation

IGBT 1200V 170A 962W TO264

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): 340A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 85A
  • Power - Max: 962W
  • Switching Energy: 6mJ (on), 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 660nC
  • Td (on/off) @ 25°C: 43ns/300ns
  • Test Condition: 600V, 85A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
패키지: TO-264-3, TO-264AA
재고6,816
1200V
170A
340A
3.2V @ 15V, 85A
962W
6mJ (on), 3.8mJ (off)
Standard
660nC
43ns/300ns
600V, 85A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
TO-264
hot APT50GT60BRDQ2G
Microsemi Corporation

IGBT 600V 110A 446W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 110A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 446W
  • Switching Energy: 995µJ (on), 1070µJ (off)
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 14ns/240ns
  • Test Condition: 400V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고46,020
600V
110A
150A
2.5V @ 15V, 50A
446W
995µJ (on), 1070µJ (off)
Standard
240nC
14ns/240ns
400V, 50A, 5 Ohm, 15V
22ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
IXXH60N65B4H1
IXYS

IGBT 650V 116A 380W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 116A
  • Current - Collector Pulsed (Icm): 230A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
  • Power - Max: 380W
  • Switching Energy: 3.13mJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 37ns/145ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXXH)
패키지: TO-247-3
재고4,816
650V
116A
230A
2V @ 15V, 60A
380W
3.13mJ (on), 1.15mJ (off)
Standard
95nC
37ns/145ns
400V, 60A, 5 Ohm, 15V
150ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXXH)
IKD10N60RFATMA1
Infineon Technologies

IGBT 600V 20A 150W PG-TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 190µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 12ns/168ns
  • Test Condition: 400V, 10A, 26 Ohm, 15V
  • Reverse Recovery Time (trr): 72ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,872
600V
20A
30A
2.5V @ 15V, 10A
150W
190µJ (on), 160µJ (off)
Standard
64nC
12ns/168ns
400V, 10A, 26 Ohm, 15V
72ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
STGFW35HF60W
STMicroelectronics

IGBT 600V 36A 88W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 88W
  • Switching Energy: 290µJ (on), 185µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 30ns/175ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
패키지: TO-3P-3 Full Pack
재고8,220
600V
36A
150A
2.5V @ 15V, 20A
88W
290µJ (on), 185µJ (off)
Standard
140nC
30ns/175ns
400V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
STGB30NC60WT4
STMicroelectronics

IGBT 600V 60A 200W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 305µJ (on), 181µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 29.5ns/118ns
  • Test Condition: 390V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고18,456
600V
60A
150A
2.5V @ 15V, 20A
200W
305µJ (on), 181µJ (off)
Standard
102nC
29.5ns/118ns
390V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot APT30GP60BDQ1G
Microsemi Corporation

IGBT 600V 100A 463W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 463W
  • Switching Energy: 260µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/55ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고6,192
600V
100A
120A
2.7V @ 15V, 30A
463W
260µJ (on), 250µJ (off)
Standard
90nC
13ns/55ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
NTE3320
NTE Electronics, Inc

IGBT 600V 50A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
  • Power - Max: 240 W
  • Switching Energy: 1.30mJ (on), 1.34mJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 240ns/300ns
  • Test Condition: 300V, 50A, 130Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: -
Request a Quote
600 V
50 A
100 A
2.45V @ 15V, 50A
240 W
1.30mJ (on), 1.34mJ (off)
Standard
-
240ns/300ns
300V, 50A, 130Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IKWH20N65WR6XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 55A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 55 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 136 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 97 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
패키지: -
재고423
650 V
55 A
60 A
1.7V @ 15V, 20A
136 W
-
Standard
97 nC
-
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
IXGA48N60C3-TRL
IXYS

IXGA48N60C3 TRL

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 250 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
  • Power - Max: 300 W
  • Switching Energy: 410µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 77 nC
  • Td (on/off) @ 25°C: 19ns/60ns
  • Test Condition: 400V, 30A, 3Ohm, 15V
  • Reverse Recovery Time (trr): 26 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
패키지: -
Request a Quote
600 V
75 A
250 A
2.5V @ 15V, 30A
300 W
410µJ (on), 230µJ (off)
Standard
77 nC
19ns/60ns
400V, 30A, 3Ohm, 15V
26 ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IXG100IF1200HF
IXYS

IGBT PT 1200V 140A PLUS247-3

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 140 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
패키지: -
Request a Quote
1200 V
140 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3 Variant
PLUS247™-3
SIGC18T60UNX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 400V, 20A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
20 A
60 A
3.15V @ 15V, 20A
-
-
Standard
-
15ns/65ns
400V, 20A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGS30NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 34A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 34 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 150 W
  • Switching Energy: 360µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 22 nC
  • Td (on/off) @ 25°C: 21ns/93ns
  • Test Condition: 400V, 15A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 96 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
패키지: -
재고3,000
650 V
34 A
45 A
2.1V @ 15V, 15A
150 W
360µJ (on), 400µJ (off)
Standard
22 nC
21ns/93ns
400V, 15A, 10Ohm, 15V
96 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
63-7000PBF
Infineon Technologies

IGBT 650V COPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GWA40MS120DF4AG
STMicroelectronics

IGBT TRENCH FS 1200V 80A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 536 W
  • Switching Energy: 1.5mJ (on), 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 147 nC
  • Td (on/off) @ 25°C: 35ns/140ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 465 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
Request a Quote
1200 V
80 A
120 A
2.3V @ 15V, 40A
536 W
1.5mJ (on), 3.3mJ (off)
Standard
147 nC
35ns/140ns
600V, 40A, 10Ohm, 15V
465 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
IXGN200N170
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 280 A
  • Current - Collector Pulsed (Icm): 1050 A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
  • Power - Max: 1250 W
  • Switching Energy: 28mJ (on), 30mJ (off)
  • Input Type: Standard
  • Gate Charge: 540 nC
  • Td (on/off) @ 25°C: 37ns/320ns
  • Test Condition: 850V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 133 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: -
Request a Quote
1700 V
280 A
1050 A
2.6V @ 15V, 100A
1250 W
28mJ (on), 30mJ (off)
Standard
540 nC
37ns/320ns
850V, 100A, 1Ohm, 15V
133 ns
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
AIGB30N65F5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: -
Request a Quote
650 V
30 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
SIGC81T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 95ns/200ns
  • Test Condition: 300V, 100A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
95ns/200ns
300V, 100A, 2.2Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IPP014N08NM6AKSA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
-
-
-