페이지 85 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  85/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PH42UD1MPBF
Infineon Technologies

IGBT 1200V 85A 313W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 313W
  • Switching Energy: 1.21mJ (off)
  • Input Type: Standard
  • Gate Charge: 270nC
  • Td (on/off) @ 25°C: -/270ns
  • Test Condition: 600V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고6,800
1200V
85A
200A
2V @ 15V, 30A
313W
1.21mJ (off)
Standard
270nC
-/270ns
600V, 30A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRGPF40F
Infineon Technologies

IGBT FAST 900V 31A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 17A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고3,968
900V
31A
-
3.3V @ 15V, 17A
160W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXSX40N60CD1
IXYS

IGBT 600V 75A 280W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 280W
  • Switching Energy: 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 50ns/70ns
  • Test Condition: 480V, 40A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고5,472
600V
75A
150A
2.5V @ 15V, 40A
280W
1mJ (off)
Standard
190nC
50ns/70ns
480V, 40A, 2.7 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
MGP15N40CLG
ON Semiconductor

IGBT 440V 15A 150W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 440V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 25A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/4µs
  • Test Condition: 300V, 6.5A, 1 kOhm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고2,640
440V
15A
50A
2.9V @ 4V, 25A
150W
-
Logic
-
-/4µs
300V, 6.5A, 1 kOhm
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKQ100N60TAXKSA1
Infineon Technologies

IGBT 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 714W
  • Switching Energy: 3.1mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 610nC
  • Td (on/off) @ 25°C: 30ns/290ns
  • Test Condition: 400V, 100A, 3.6 Ohm, 15V
  • Reverse Recovery Time (trr): 225ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고2,352
600V
160A
400A
2V @ 15V, 100A
714W
3.1mJ (on), 2.5mJ (off)
Standard
610nC
30ns/290ns
400V, 100A, 3.6 Ohm, 15V
225ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IKD04N60RAATMA1
Infineon Technologies

IGBT 600V 8A 75W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 90µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/146ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): 43ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,100
600V
8A
12A
2.1V @ 15V, 4A
75W
90µJ (on), 150µJ (off)
Standard
27nC
14ns/146ns
400V, 4A, 43 Ohm, 15V
43ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IXBF10N300C
IXYS

IGBT 3000V 29A 240W ISOPLUSI4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 29A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
  • Power - Max: 240W
  • Switching Energy: 7.2mJ (on), 1.04mJ (off)
  • Input Type: Standard
  • Gate Charge: 208nC
  • Td (on/off) @ 25°C: 32ns/390ns
  • Test Condition: 1500V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 700ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
패키지: i4-Pac?-5 (3 leads)
재고7,264
3000V
29A
240A
6V @ 15V, 10A
240W
7.2mJ (on), 1.04mJ (off)
Standard
208nC
32ns/390ns
1500V, 10A, 10 Ohm, 15V
700ns
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
IXGR16N170AH1
IXYS

IGBT 1700V 16A 120W ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 8A
  • Power - Max: 120W
  • Switching Energy: 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 36ns/200ns
  • Test Condition: 850V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
패키지: ISOPLUS247?
재고6,944
1700V
16A
40A
5V @ 15V, 8A
120W
900µJ (off)
Standard
65nC
36ns/200ns
850V, 16A, 10 Ohm, 15V
150ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGX120N60B3
IXYS

IGBT 600V 280A 780W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 280A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
  • Power - Max: 780W
  • Switching Energy: 2.9mJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 465nC
  • Td (on/off) @ 25°C: 40ns/227ns
  • Test Condition: 480V, 100A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
패키지: TO-247-3
재고5,232
600V
280A
600A
1.8V @ 15V, 100A
780W
2.9mJ (on), 3.5mJ (off)
Standard
465nC
40ns/227ns
480V, 100A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXA30RG1200DHGLB-TRR
IXYS

IGBT PHASELEG 1200V 43A SMPD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 43A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 147W
  • Switching Energy: 2.5mJ (on), 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 70ns/250ns
  • Test Condition: 600V, 25A, 39 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-SMD Module
  • Supplier Device Package: ISOPLUS-SMPD?.B
패키지: 9-SMD Module
재고5,296
1200V
43A
-
2.1V @ 15V, 25A
147W
2.5mJ (on), 3mJ (off)
Standard
76nC
70ns/250ns
600V, 25A, 39 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
9-SMD Module
ISOPLUS-SMPD?.B
hot IXGH60N60C3D1
IXYS

IGBT 600V 75A 380W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 380W
  • Switching Energy: 800µJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 21ns/70ns
  • Test Condition: 480V, 40A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고475,464
600V
75A
300A
2.5V @ 15V, 40A
380W
800µJ (on), 450µJ (off)
Standard
115nC
21ns/70ns
480V, 40A, 3 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
RJH60D7ADPK-00#T0
Renesas Electronics America

IGBT 600V 90A 300W TO-3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: 1.1mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 130nC
  • Td (on/off) @ 25°C: 60ns/190ns
  • Test Condition: 300V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 100ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고7,360
600V
90A
-
2.2V @ 15V, 50A
300W
1.1mJ (on), 600µJ (off)
Standard
130nC
60ns/190ns
300V, 50A, 5 Ohm, 15V
100ns
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXGH30N120IH
IXYS

IGBT 1200V 50A TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고2,704
1200V
50A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
APT40GR120B2SCD10
Microsemi Corporation

IGBT 1200V 88A 500W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 88A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
  • Power - Max: 500W
  • Switching Energy: 929µJ (on), 1070µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 20ns/166ns
  • Test Condition: 600V, 40A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고7,504
1200V
88A
160A
3.2V @ 15V, 40A
500W
929µJ (on), 1070µJ (off)
Standard
210nC
20ns/166ns
600V, 40A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
AOB5B65M1
Alpha & Omega Semiconductor Inc.

IGBT 650V 5A TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
  • Power - Max: 83W
  • Switching Energy: 80µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 8.5ns/106ns
  • Test Condition: 400V, 5A, 60 Ohm, 15V
  • Reverse Recovery Time (trr): 195ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,360
650V
10A
15A
1.98V @ 15V, 5A
83W
80µJ (on), 70µJ (off)
Standard
14nC
8.5ns/106ns
400V, 5A, 60 Ohm, 15V
195ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
hot IRGP4072DPBF
Infineon Technologies

IGBT 300V 70A 180W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
  • Power - Max: 180W
  • Switching Energy: 409µJ (on), 838µJ (off)
  • Input Type: Standard
  • Gate Charge: 73nC
  • Td (on/off) @ 25°C: 18ns/144ns
  • Test Condition: 240V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 122ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고5,952
300V
70A
120A
1.7V @ 15V, 40A
180W
409µJ (on), 838µJ (off)
Standard
73nC
18ns/144ns
240V, 40A, 10 Ohm, 15V
122ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IKA08N65H5XKSA1
Infineon Technologies

IGBT 650V 10.8A 31.2W PG-TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 10.8A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 31.2W
  • Switching Energy: 70µJ (on), 30µJ (off)
  • Input Type: Standard
  • Gate Charge: 22nC
  • Td (on/off) @ 25°C: 11ns/115ns
  • Test Condition: 400V, 4A, 48 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고7,968
650V
10.8A
24A
2.1V @ 15V, 8A
31.2W
70µJ (on), 30µJ (off)
Standard
22nC
11ns/115ns
400V, 4A, 48 Ohm, 15V
40ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
APT35GP120B2DQ2G
Microsemi Corporation

IGBT 1200V 96A 543W TMAX

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 96A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
  • Power - Max: 543W
  • Switching Energy: 750µJ (on), 680µJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 16ns/95ns
  • Test Condition: 600V, 35A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
패키지: TO-247-3 Variant
재고7,968
1200V
96A
140A
3.9V @ 15V, 35A
543W
750µJ (on), 680µJ (off)
Standard
150nC
16ns/95ns
600V, 35A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
IXBF20N360
IXYS

IGBT 3600V 45A ISOPLUS I4PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 230W
  • Switching Energy: 15.5mJ (on), 4.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 43nC
  • Td (on/off) @ 25°C: 18ns/238ns
  • Test Condition: 1500V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 1.7µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5
  • Supplier Device Package: ISOPLUS i4-PAC?
패키지: i4-Pac?-5
재고7,408
3600V
45A
220A
3.4V @ 15V, 20A
230W
15.5mJ (on), 4.3mJ (off)
Standard
43nC
18ns/238ns
1500V, 20A, 10 Ohm, 15V
1.7µs
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5
ISOPLUS i4-PAC?
STGWT60H60DLFB
STMicroelectronics

IGBT 600V 80A 375W TO3P-3L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
  • Power - Max: 375W
  • Switching Energy: 626µJ (off)
  • Input Type: Standard
  • Gate Charge: 306nC
  • Td (on/off) @ 25°C: -/160ns
  • Test Condition: 400V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고14,940
600V
80A
240A
2V @ 15V, 60A
375W
626µJ (off)
Standard
306nC
-/160ns
400V, 60A, 5 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot STGW30NC60KD
STMicroelectronics

IGBT 600V 60A 200W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 125A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 350µJ (on), 435µJ (off)
  • Input Type: Standard
  • Gate Charge: 96nC
  • Td (on/off) @ 25°C: 29ns/120ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고11,148
600V
60A
125A
2.7V @ 15V, 20A
200W
350µJ (on), 435µJ (off)
Standard
96nC
29ns/120ns
480V, 20A, 10 Ohm, 15V
40ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SIGC12T60NCX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 10A, 27Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
10 A
30 A
2.5V @ 15V, 10A
-
-
Standard
-
21ns/110ns
300V, 10A, 27Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
RGTV00TK65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 45A TO3PFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 45 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 94 W
  • Switching Energy: 1.17mJ (on), 940µJ (off)
  • Input Type: Standard
  • Gate Charge: 104 nC
  • Td (on/off) @ 25°C: 41ns/142ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 102 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
패키지: -
재고1,350
650 V
45 A
200 A
1.9V @ 15V, 50A
94 W
1.17mJ (on), 940µJ (off)
Standard
104 nC
41ns/142ns
400V, 50A, 10Ohm, 15V
102 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PFM
IXBT42N170-TRL
IXYS

IGBT 1700V 80A TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
  • Power - Max: 360 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 188 nC
  • Td (on/off) @ 25°C: 37ns/340ns
  • Test Condition: 850V, 42A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: -
Request a Quote
1700 V
80 A
300 A
2.8V @ 15V, 42A
360 W
-
Standard
188 nC
37ns/340ns
850V, 42A, 10Ohm, 15V
-
-
Surface Mount
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-268
AOTF8B65MQ1
Alpha & Omega Semiconductor Inc.

IGBT 8A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 16 A
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 8A
  • Power - Max: 30 W
  • Switching Energy: 160µJ (on), 110µJ (off)
  • Input Type: Standard
  • Gate Charge: 22 nC
  • Td (on/off) @ 25°C: 8.5ns/102ns
  • Test Condition: 400V, 8A, 37.5Ohm, 15V
  • Reverse Recovery Time (trr): 94 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: -
Request a Quote
650 V
16 A
24 A
2.25V @ 15V, 8A
30 W
160µJ (on), 110µJ (off)
Standard
22 nC
8.5ns/102ns
400V, 8A, 37.5Ohm, 15V
94 ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
IGTM10N50A
Harris Corporation

N CHANNEL IGBT FOR SWITCHING APP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 10 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
패키지: -
Request a Quote
500 V
10 A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-204AA, TO-3
TO-3
FGY100T120SWD
onsemi

IGBT FIELD STOP 1200V 200A TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 400 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 866 W
  • Switching Energy: 3.1mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 284 nC
  • Td (on/off) @ 25°C: 46.4ns/209.6ns
  • Test Condition: 600V, 50A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 152 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: TO-247-3
패키지: -
Request a Quote
1200 V
200 A
400 A
2V @ 15V, 100A
866 W
3.1mJ (on), 1.6mJ (off)
Standard
284 nC
46.4ns/209.6ns
600V, 50A, 4.7Ohm, 15V
152 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3 Variant
TO-247-3
AOK40B120N1
Alpha & Omega Semiconductor Inc.

IGBT 1200V 40A TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 600 W
  • Switching Energy: 3.4mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 100 nC
  • Td (on/off) @ 25°C: 57ns/146ns
  • Test Condition: 600V, 40A, 7.5Ohm, 15V
  • Reverse Recovery Time (trr): 300 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: -
Request a Quote
1200 V
80 A
160 A
2.5V @ 15V, 40A
600 W
3.4mJ (on), 1.4mJ (off)
Standard
100 nC
57ns/146ns
600V, 40A, 7.5Ohm, 15V
300 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247