페이지 88 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품

IRG8P40N120KDPBF

Infineon Technologies

IGBT 1200V 60A 305W TO-247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 75A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Power - Max: 305W
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Input Type: Standard
Gate Charge: 240nC
Td (on/off) @ 25°C: 40ns/245ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr): 80ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고5,744

1200V

60A

75A

2V @ 15V, 25A

305W

1.6mJ (on), 1.8mJ (off)

Standard

240nC

40ns/245ns

600V, 25A, 10 Ohm, 15V

80ns

-40°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

IRGP4063-EPBF

Infineon Technologies

IGBT 600V 96A 330W TO247AD

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 96A
Current - Collector Pulsed (Icm): 144A
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Power - Max: 330W
Switching Energy: 625µJ (on), 1.28mJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 60ns/145ns
Test Condition: 400V, 48A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

패키지: TO-247-3

재고103,464

600V

96A

144A

2.14V @ 15V, 48A

330W

625µJ (on), 1.28mJ (off)

Standard

95nC

60ns/145ns

400V, 48A, 10 Ohm, 15V

-

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

TO-247AD

IRGBC20FD2

Infineon Technologies

IGBT W/DIODE 600V 16A TO-220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고14,820

600V

16A

-

Standard

-

Through Hole

TO-220-3

TO-220AB

IXGH32N60BD1

IXYS

IGBT 600V 60A 200W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A
Power - Max: 200W
Switching Energy: 600µJ (off)
Input Type: Standard
Gate Charge: 110nC
Td (on/off) @ 25°C: 25ns/100ns
Test Condition: 480V, 32A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고6,272

600V

60A

120A

2.3V @ 15V, 32A

200W

600µJ (off)

Standard

110nC

25ns/100ns

480V, 32A, 4.7 Ohm, 15V

25ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AD (IXGH)

SGL160N60UFTU

Fairchild/ON Semiconductor

IGBT 600V 160A 250W TO3PF

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A
Power - Max: 250W
Switching Energy: 2.5mJ (on), 1.76mJ (off)
Input Type: Standard
Gate Charge: 345nC
Td (on/off) @ 25°C: 40ns/90ns
Test Condition: 300V, 80A, 3.9 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264

패키지: TO-264-3, TO-264AA

재고11,916

600V

160A

300A

2.6V @ 15V, 80A

250W

2.5mJ (on), 1.76mJ (off)

Standard

345nC

40ns/90ns

300V, 80A, 3.9 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-264-3, TO-264AA

TO-264

ISL9V3040S3S

Fairchild/ON Semiconductor

IGBT 430V 21A 150W TO263AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 430V
Current - Collector (Ic) (Max): 21A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A
Power - Max: 150W
Switching Energy: -
Input Type: Logic
Gate Charge: 17nC
Td (on/off) @ 25°C: -/4.8µs
Test Condition: 300V, 1 kOhm, 5V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고314,664

430V

21A

-

1.6V @ 4V, 6A

150W

-

Logic

17nC

-/4.8µs

300V, 1 kOhm, 5V

-

-40°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

FGB40N6S2

Fairchild/ON Semiconductor

IGBT 600V 75A 290W TO263AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Power - Max: 290W
Switching Energy: 115µJ (on), 195µJ (off)
Input Type: Standard
Gate Charge: 35nC
Td (on/off) @ 25°C: 8ns/35ns
Test Condition: 390V, 20A, 3 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,888

600V

75A

180A

2.7V @ 15V, 20A

290W

115µJ (on), 195µJ (off)

Standard

35nC

8ns/35ns

390V, 20A, 3 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

FGH30N6S2

Fairchild/ON Semiconductor

IGBT 600V 45A 167W TO247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 45A
Current - Collector Pulsed (Icm): 108A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Power - Max: 167W
Switching Energy: 55µJ (on), 100µJ (off)
Input Type: Standard
Gate Charge: 23nC
Td (on/off) @ 25°C: 6ns/40ns
Test Condition: 390V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고7,248

600V

45A

108A

2.5V @ 15V, 12A

167W

55µJ (on), 100µJ (off)

Standard

23nC

6ns/40ns

390V, 12A, 10 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

IRG7CH37K10EF

Infineon Technologies

IGBT CHIP WAFER

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 15A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 28ns/122ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고3,072

1200V

15A

-

2.3V @ 15V, 15A

-

Standard

80nC

28ns/122ns

600V, 15A, 10 Ohm, 15V

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

SKB02N120ATMA1

Infineon Technologies

IGBT 1200V 6.2A 62W TO263-3-2

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 6.2A
Current - Collector Pulsed (Icm): 9.6A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
Power - Max: 62W
Switching Energy: 220µJ
Input Type: Standard
Gate Charge: 11nC
Td (on/off) @ 25°C: 23ns/260ns
Test Condition: 800V, 2A, 91 Ohm, 15V
Reverse Recovery Time (trr): 50ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,968

1200V

6.2A

9.6A

3.6V @ 15V, 2A

62W

220µJ

Standard

11nC

23ns/260ns

800V, 2A, 91 Ohm, 15V

50ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

PG-TO263-3-2

IXGK400N30B3

IXYS

IGBT 300V 400A TO264AA

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 400A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264 (IXGK)

패키지: TO-264-3, TO-264AA

재고5,024

300V

400A

-

Standard

-

Through Hole

TO-264-3, TO-264AA

TO-264 (IXGK)

APT68GA60B2D40

Microsemi Corporation

IGBT 600V 121A 520W TO-247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 121A
Current - Collector Pulsed (Icm): 202A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Power - Max: 520W
Switching Energy: 715µJ (on), 607µJ (off)
Input Type: Standard
Gate Charge: 198nC
Td (on/off) @ 25°C: 21ns/133ns
Test Condition: 400V, 40A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: -

패키지: TO-247-3 Variant

재고7,056

600V

121A

202A

2.5V @ 15V, 40A

520W

715µJ (on), 607µJ (off)

Standard

198nC

21ns/133ns

400V, 40A, 4.7 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3 Variant

-

IXGR24N120C3H1

IXYS

IGBT 1200V 48A ISOPLUS247

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

패키지: ISOPLUS247?

재고7,360

1200V

48A

-

Standard

-

Through Hole

ISOPLUS247?

FGH50N3

Fairchild/ON Semiconductor

IGBT 300V 75A 463W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 300V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Power - Max: 463W
Switching Energy: 130µJ (on), 92µJ (off)
Input Type: Standard
Gate Charge: 180nC
Td (on/off) @ 25°C: 20ns/135ns
Test Condition: 180V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고2,512

300V

75A

240A

1.4V @ 15V, 30A

463W

130µJ (on), 92µJ (off)

Standard

180nC

20ns/135ns

180V, 30A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247

IXGT60N60C3D1

IXYS

IGBT 600V 75A 380W TO268

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Power - Max: 380W
Switching Energy: 800µJ (on), 450µJ (off)
Input Type: Standard
Gate Charge: 115nC
Td (on/off) @ 25°C: 21ns/70ns
Test Condition: 480V, 40A, 3 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고5,120

600V

75A

300A

2.5V @ 15V, 40A

380W

800µJ (on), 450µJ (off)

Standard

115nC

21ns/70ns

480V, 40A, 3 Ohm, 15V

25ns

-55°C ~ 150°C (TJ)

Surface Mount

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

TO-268

IXGA48N60A3

IXYS

IGBT 600V 120A 300W TO263AA

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 300A
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Power - Max: 300W
Switching Energy: 950µJ (on), 2.9mJ (off)
Input Type: Standard
Gate Charge: 110nC
Td (on/off) @ 25°C: 25ns/334ns
Test Condition: 480V, 32A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (IXGA)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,120

600V

120A

300A

1.35V @ 15V, 32A

300W

950µJ (on), 2.9mJ (off)

Standard

110nC

25ns/334ns

480V, 32A, 5 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (IXGA)

STGB30V60DF

STMicroelectronics

IGBT 600V 60A 258W D2PAK

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Power - Max: 258W
Switching Energy: 383µJ (on), 233µJ (off)
Input Type: Standard
Gate Charge: 163nC
Td (on/off) @ 25°C: 45ns/189ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 53ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고4,208

600V

60A

120A

2.3V @ 15V, 30A

258W

383µJ (on), 233µJ (off)

Standard

163nC

45ns/189ns

400V, 30A, 10 Ohm, 15V

53ns

-55°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

IRG4BC20FDPBF

Infineon Technologies

IGBT 600V 16A 60W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Current - Collector Pulsed (Icm): 64A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Power - Max: 60W
Switching Energy: 250µJ (on), 640µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 43ns/240ns
Test Condition: 480V, 9A, 50 Ohm, 15V
Reverse Recovery Time (trr): 37ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고13,200

600V

16A

64A

2V @ 15V, 9A

60W

250µJ (on), 640µJ (off)

Standard

27nC

43ns/240ns

480V, 9A, 50 Ohm, 15V

37ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IRG4BC20UPBF

Infineon Technologies

IGBT 600V 13A 60W TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 13A
Current - Collector Pulsed (Icm): 52A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Power - Max: 60W
Switching Energy: 100µJ (on), 120µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 21ns/86ns
Test Condition: 480V, 6.5A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고6,204

600V

13A

52A

2.1V @ 15V, 6.5A

60W

100µJ (on), 120µJ (off)

Standard

27nC

21ns/86ns

480V, 6.5A, 50 Ohm, 15V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IRG4PC30KDPBF

Infineon Technologies

IGBT 600V 28A 100W TO247AC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 28A
Current - Collector Pulsed (Icm): 58A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Power - Max: 100W
Switching Energy: 600µJ (on), 580µJ (off)
Input Type: Standard
Gate Charge: 67nC
Td (on/off) @ 25°C: 60ns/160ns
Test Condition: 480V, 16A, 23 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

패키지: TO-247-3

재고18,660

600V

28A

58A

2.7V @ 15V, 16A

100W

600µJ (on), 580µJ (off)

Standard

67nC

60ns/160ns

480V, 16A, 23 Ohm, 15V

42ns

-55°C ~ 150°C (TJ)

Through Hole

TO-247-3

TO-247AC

MGB20N36CL

onsemi

IGBT 360V D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NGP8203N

onsemi

IGBT 440 20A

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SIGC42T60SNCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

600 V

50 A

150 A

2.5V @ 15V, 50A

-

Standard

-

57ns/380ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

HG24N60D1D

Harris Corporation

HG24N60D1D

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FGA25S125P

onsemi

IGBT 1250V 50A 250W TO-3PN

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 75 A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Power - Max: 250 W
Switching Energy: -
Input Type: Standard
Gate Charge: 204 nC
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN

패키지: -

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1250 V

50 A

75 A

2.35V @ 15V, 25A

250 W

-

Standard

204 nC

-

Through Hole

TO-3P-3, SC-65-3

TO-3PN

IXYP15N65B3D1

IXYS

IGBT TO220AB

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

HGTG2ON60C3DR

Harris Corporation

40A, 600V, RUGGED UFS SERIES N C

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IXYX140N120A4

IXYS

IGBT PT 1200V 480A PLUS247-3

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 480 A
Current - Collector Pulsed (Icm): 1200 A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Power - Max: 1500 W
Switching Energy: 4.9mJ (on), 12mJ (off)
Input Type: Standard
Gate Charge: 420 nC
Td (on/off) @ 25°C: 52ns/590ns
Test Condition: 600V, 70A, 1.5Ohm, 15V
Reverse Recovery Time (trr): 47 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3

패키지: -

재고219

1200 V

480 A

1200 A

1.7V @ 15V, 140A

1500 W

4.9mJ (on), 12mJ (off)

Standard

420 nC

52ns/590ns

600V, 70A, 1.5Ohm, 15V

47 ns

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3 Variant

PLUS247™-3

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRG8P40N120KDPBF	Infineon Technologies	IGBT 1200V 60A 305W TO-247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: 305W Switching Energy: 1.6mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10 Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고5,744	1200V	60A	75A	2V @ 15V, 25A	305W	1.6mJ (on), 1.8mJ (off)	Standard	240nC	40ns/245ns	600V, 25A, 10 Ohm, 15V	80ns	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
IRGP4063-EPBF	Infineon Technologies	IGBT 600V 96A 330W TO247AD IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 144A Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Power - Max: 330W Switching Energy: 625µJ (on), 1.28mJ (off) Input Type: Standard Gate Charge: 95nC Td (on/off) @ 25°C: 60ns/145ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	패키지: TO-247-3	재고103,464	600V	96A	144A	2.14V @ 15V, 48A	330W	625µJ (on), 1.28mJ (off)	Standard	95nC	60ns/145ns	400V, 48A, 10 Ohm, 15V	-	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247AD
IRGBC20FD2	Infineon Technologies	IGBT W/DIODE 600V 16A TO-220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고14,820	600V	16A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-220-3	TO-220AB
IXGH32N60BD1	IXYS	IGBT 600V 60A 200W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 32A Power - Max: 200W Switching Energy: 600µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 25ns/100ns Test Condition: 480V, 32A, 4.7 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고6,272	600V	60A	120A	2.3V @ 15V, 32A	200W	600µJ (off)	Standard	110nC	25ns/100ns	480V, 32A, 4.7 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXGH)
SGL160N60UFTU	Fairchild/ON Semiconductor	IGBT 600V 160A 250W TO3PF IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 80A Power - Max: 250W Switching Energy: 2.5mJ (on), 1.76mJ (off) Input Type: Standard Gate Charge: 345nC Td (on/off) @ 25°C: 40ns/90ns Test Condition: 300V, 80A, 3.9 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	패키지: TO-264-3, TO-264AA	재고11,916	600V	160A	300A	2.6V @ 15V, 80A	250W	2.5mJ (on), 1.76mJ (off)	Standard	345nC	40ns/90ns	300V, 80A, 3.9 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264
ISL9V3040S3S	Fairchild/ON Semiconductor	IGBT 430V 21A 150W TO263AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 21A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Power - Max: 150W Switching Energy: - Input Type: Logic Gate Charge: 17nC Td (on/off) @ 25°C: -/4.8µs Test Condition: 300V, 1 kOhm, 5V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고314,664	430V	21A	-	1.6V @ 4V, 6A	150W	-	Logic	17nC	-/4.8µs	300V, 1 kOhm, 5V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
FGB40N6S2	Fairchild/ON Semiconductor	IGBT 600V 75A 290W TO263AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A Power - Max: 290W Switching Energy: 115µJ (on), 195µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 8ns/35ns Test Condition: 390V, 20A, 3 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,888	600V	75A	180A	2.7V @ 15V, 20A	290W	115µJ (on), 195µJ (off)	Standard	35nC	8ns/35ns	390V, 20A, 3 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB
FGH30N6S2	Fairchild/ON Semiconductor	IGBT 600V 45A 167W TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 108A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Power - Max: 167W Switching Energy: 55µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 23nC Td (on/off) @ 25°C: 6ns/40ns Test Condition: 390V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고7,248	600V	45A	108A	2.5V @ 15V, 12A	167W	55µJ (on), 100µJ (off)	Standard	23nC	6ns/40ns	390V, 12A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IRG7CH37K10EF	Infineon Technologies	IGBT CHIP WAFER IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 28ns/122ns Test Condition: 600V, 15A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고3,072	1200V	15A	-	2.3V @ 15V, 15A	-	-	Standard	80nC	28ns/122ns	600V, 15A, 10 Ohm, 15V	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
SKB02N120ATMA1	Infineon Technologies	IGBT 1200V 6.2A 62W TO263-3-2 IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 6.2A Current - Collector Pulsed (Icm): 9.6A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A Power - Max: 62W Switching Energy: 220µJ Input Type: Standard Gate Charge: 11nC Td (on/off) @ 25°C: 23ns/260ns Test Condition: 800V, 2A, 91 Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,968	1200V	6.2A	9.6A	3.6V @ 15V, 2A	62W	220µJ	Standard	11nC	23ns/260ns	800V, 2A, 91 Ohm, 15V	50ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	PG-TO263-3-2
IXGK400N30B3	IXYS	IGBT 300V 400A TO264AA IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 400A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264 (IXGK)	패키지: TO-264-3, TO-264AA	재고5,024	300V	400A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-264-3, TO-264AA	TO-264 (IXGK)
APT68GA60B2D40	Microsemi Corporation	IGBT 600V 121A 520W TO-247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 121A Current - Collector Pulsed (Icm): 202A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 520W Switching Energy: 715µJ (on), 607µJ (off) Input Type: Standard Gate Charge: 198nC Td (on/off) @ 25°C: 21ns/133ns Test Condition: 400V, 40A, 4.7 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: -	패키지: TO-247-3 Variant	재고7,056	600V	121A	202A	2.5V @ 15V, 40A	520W	715µJ (on), 607µJ (off)	Standard	198nC	21ns/133ns	400V, 40A, 4.7 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	-
IXGR24N120C3H1	IXYS	IGBT 1200V 48A ISOPLUS247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	패키지: ISOPLUS247?	재고7,360	1200V	48A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	ISOPLUS247?	ISOPLUS247?
FGH50N3	Fairchild/ON Semiconductor	IGBT 300V 75A 463W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Power - Max: 463W Switching Energy: 130µJ (on), 92µJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: 20ns/135ns Test Condition: 180V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고2,512	300V	75A	240A	1.4V @ 15V, 30A	463W	130µJ (on), 92µJ (off)	Standard	180nC	20ns/135ns	180V, 30A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
IXGT60N60C3D1	IXYS	IGBT 600V 75A 380W TO268 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Power - Max: 380W Switching Energy: 800µJ (on), 450µJ (off) Input Type: Standard Gate Charge: 115nC Td (on/off) @ 25°C: 21ns/70ns Test Condition: 480V, 40A, 3 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고5,120	600V	75A	300A	2.5V @ 15V, 40A	380W	800µJ (on), 450µJ (off)	Standard	115nC	21ns/70ns	480V, 40A, 3 Ohm, 15V	25ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	TO-268
IXGA48N60A3	IXYS	IGBT 600V 120A 300W TO263AA IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 120A Current - Collector Pulsed (Icm): 300A Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A Power - Max: 300W Switching Energy: 950µJ (on), 2.9mJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 25ns/334ns Test Condition: 480V, 32A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (IXGA)	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,120	600V	120A	300A	1.35V @ 15V, 32A	300W	950µJ (on), 2.9mJ (off)	Standard	110nC	25ns/334ns	480V, 32A, 5 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (IXGA)
STGB30V60DF	STMicroelectronics	IGBT 600V 60A 258W D2PAK IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Power - Max: 258W Switching Energy: 383µJ (on), 233µJ (off) Input Type: Standard Gate Charge: 163nC Td (on/off) @ 25°C: 45ns/189ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 53ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고4,208	600V	60A	120A	2.3V @ 15V, 30A	258W	383µJ (on), 233µJ (off)	Standard	163nC	45ns/189ns	400V, 30A, 10 Ohm, 15V	53ns	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK
IRG4BC20FDPBF	Infineon Technologies	IGBT 600V 16A 60W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 64A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A Power - Max: 60W Switching Energy: 250µJ (on), 640µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 43ns/240ns Test Condition: 480V, 9A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고13,200	600V	16A	64A	2V @ 15V, 9A	60W	250µJ (on), 640µJ (off)	Standard	27nC	43ns/240ns	480V, 9A, 50 Ohm, 15V	37ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IRG4BC20UPBF	Infineon Technologies	IGBT 600V 13A 60W TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A Power - Max: 60W Switching Energy: 100µJ (on), 120µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 21ns/86ns Test Condition: 480V, 6.5A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고6,204	600V	13A	52A	2.1V @ 15V, 6.5A	60W	100µJ (on), 120µJ (off)	Standard	27nC	21ns/86ns	480V, 6.5A, 50 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IRG4PC30KDPBF	Infineon Technologies	IGBT 600V 28A 100W TO247AC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 58A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Power - Max: 100W Switching Energy: 600µJ (on), 580µJ (off) Input Type: Standard Gate Charge: 67nC Td (on/off) @ 25°C: 60ns/160ns Test Condition: 480V, 16A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	패키지: TO-247-3	재고18,660	600V	28A	58A	2.7V @ 15V, 16A	100W	600µJ (on), 580µJ (off)	Standard	67nC	60ns/160ns	480V, 16A, 23 Ohm, 15V	42ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AC
MGB20N36CL	onsemi	IGBT 360V D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGP8203N	onsemi	IGBT 440 20A IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIGC42T60SNCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 57ns/380ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	57ns/380ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
HG24N60D1D	Harris Corporation	HG24N60D1D IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FGA25S125P	onsemi	IGBT 1250V 50A 250W TO-3PN IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 75 A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A Power - Max: 250 W Switching Energy: - Input Type: Standard Gate Charge: 204 nC Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3PN	패키지: -	Request a Quote	1250 V	50 A	75 A	2.35V @ 15V, 25A	250 W	-	Standard	204 nC	-	-	-	-	Through Hole	TO-3P-3, SC-65-3	TO-3PN
IXYP15N65B3D1	IXYS	IGBT TO220AB IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
HGTG2ON60C3DR	Harris Corporation	40A, 600V, RUGGED UFS SERIES N C IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXYX140N120A4	IXYS	IGBT PT 1200V 480A PLUS247-3 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 480 A Current - Collector Pulsed (Icm): 1200 A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A Power - Max: 1500 W Switching Energy: 4.9mJ (on), 12mJ (off) Input Type: Standard Gate Charge: 420 nC Td (on/off) @ 25°C: 52ns/590ns Test Condition: 600V, 70A, 1.5Ohm, 15V Reverse Recovery Time (trr): 47 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3	패키지: -	재고219	1200 V	480 A	1200 A	1.7V @ 15V, 140A	1500 W	4.9mJ (on), 12mJ (off)	Standard	420 nC	52ns/590ns	600V, 70A, 1.5Ohm, 15V	47 ns	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3 Variant	PLUS247™-3