페이지 98 - 트랜지스터 - IGBT - 단일 | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - IGBT - 단일

기록 4,424
페이지  98/158
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGS4607DTRRPBF
Infineon Technologies

IGBT 600V 11A 58W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 58W
  • Switching Energy: 140µJ (on), 62µJ (off)
  • Input Type: Standard
  • Gate Charge: 9nC
  • Td (on/off) @ 25°C: 27ns/120ns
  • Test Condition: 400V, 4A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,224
600V
11A
12A
2.05V @ 15V, 4A
58W
140µJ (on), 62µJ (off)
Standard
9nC
27ns/120ns
400V, 4A, 100 Ohm, 15V
48ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRGP4063D1-EPBF
Infineon Technologies

IGBT 600V 100A 330W TO-247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 192A
  • Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 1.4mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고103,464
600V
100A
192A
2.14V @ 15V, 48A
330W
1.4mJ (on), 1.1mJ (off)
Standard
150nC
60ns/160ns
400V, 48A, 10 Ohm, 15V
80ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IRG4BC30S-SPBF
Infineon Technologies

IGBT 600V 34A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고112,128
600V
34A
68A
1.6V @ 15V, 18A
100W
260µJ (on), 3.45mJ (off)
Standard
50nC
22ns/540ns
480V, 18A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRG4PC30K
Infineon Technologies

IGBT 600V 28A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 58A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 360µJ (on), 510µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 26ns/130ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고5,792
600V
28A
58A
2.7V @ 15V, 16A
100W
360µJ (on), 510µJ (off)
Standard
67nC
26ns/130ns
480V, 16A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot NGTB25N120LWG
ON Semiconductor

IGBT 1200V 50A 192W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
  • Power - Max: 192W
  • Switching Energy: 3.4mJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 89ns/235ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고104,196
1200V
50A
200A
2.3V @ 15V, 25A
192W
3.4mJ (on), 800µJ (off)
Standard
200nC
89ns/235ns
600V, 25A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IXST45N120B
IXYS

IGBT 1200V 75A 300W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 45A
  • Power - Max: 300W
  • Switching Energy: 13mJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 36ns/360ns
  • Test Condition: 960V, 45A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,344
1200V
75A
180A
3V @ 15V, 45A
300W
13mJ (off)
Standard
120nC
36ns/360ns
960V, 45A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
AUIRGP66524D0
Infineon Technologies

IGBT 600V 60A 214W TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 214W
  • Switching Energy: 915µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 30ns/75ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 176ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고2,192
600V
60A
72A
1.9V @ 15V, 24A
214W
915µJ (on), 280µJ (off)
Standard
80nC
30ns/75ns
400V, 24A, 10 Ohm, 15V
176ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXGY2N120
IXYS

IGBT 1200V 5A 25W TO252AA

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 5A
  • Current - Collector Pulsed (Icm): 8A
  • Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 5A
  • Power - Max: 25W
  • Switching Energy: 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 9nC
  • Td (on/off) @ 25°C: 15ns/300ns
  • Test Condition: 960V, 2A, 150 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,136
1200V
5A
8A
4.5V @ 15V, 5A
25W
600µJ (off)
Standard
9nC
15ns/300ns
960V, 2A, 150 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
IXGH48N60A3
IXYS

IGBT 600V 120A 300W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
  • Power - Max: 300W
  • Switching Energy: 950µJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 25ns/334ns
  • Test Condition: 480V, 32A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
패키지: TO-247-3
재고2,848
600V
120A
300A
1.35V @ 15V, 32A
300W
950µJ (on), 2.9mJ (off)
Standard
110nC
25ns/334ns
480V, 32A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
NGTD20T120F2WP
ON Semiconductor

IGBT TRENCH FIELD STOP 1200V DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고3,552
1200V
-
100A
2.4V @ 15V, 20A
-
-
Standard
-
-
-
-
-55°C ~ 175°C (TJ)
Surface Mount
Die
Die
APT64GA90B2D30
Microsemi Corporation

IGBT 900V 117A 500W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 117A
  • Current - Collector Pulsed (Icm): 193A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
  • Power - Max: 500W
  • Switching Energy: 1192µJ (on), 1088µJ (off)
  • Input Type: Standard
  • Gate Charge: 162nC
  • Td (on/off) @ 25°C: 18ns/131ns
  • Test Condition: 600V, 38A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
패키지: TO-247-3 Variant
재고5,136
900V
117A
193A
3.1V @ 15V, 38A
500W
1192µJ (on), 1088µJ (off)
Standard
162nC
18ns/131ns
600V, 38A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
RGT16NS65DGTL
Rohm Semiconductor

IGBT 650V 16A 94W TO-263S

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 94W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: 13ns/33ns
  • Test Condition: 400V, 8A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS (TO-263S)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,232
650V
16A
24A
2.1V @ 15V, 8A
94W
-
Standard
21nC
13ns/33ns
400V, 8A, 10 Ohm, 15V
42ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
LPDS (TO-263S)
IXYH10N170C
IXYS

IGBT 1.7KV 36A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 84A
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
  • Power - Max: 280W
  • Switching Energy: 1.4mJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 14ns/130ns
  • Test Condition: 850V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 17ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
패키지: TO-247-3
재고3,696
1700V
36A
84A
3.8V @ 15V, 10A
280W
1.4mJ (on), 700µJ (off)
Standard
46nC
14ns/130ns
850V, 10A, 10 Ohm, 15V
17ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
HGTG30N60B3D
Fairchild/ON Semiconductor

IGBT 600V 60A 208W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 208W
  • Switching Energy: 550µJ (on), 680µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 36ns/137ns
  • Test Condition: 480V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,544
600V
60A
220A
1.9V @ 15V, 30A
208W
550µJ (on), 680µJ (off)
Standard
170nC
36ns/137ns
480V, 30A, 3 Ohm, 15V
55ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot IRG4IBC20UDPBF
Infineon Technologies

IGBT 600V 11.4A 34W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11.4A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
  • Power - Max: 34W
  • Switching Energy: 160µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 39ns/93ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고49,200
600V
11.4A
52A
2.1V @ 15V, 6.5A
34W
160µJ (on), 130µJ (off)
Standard
27nC
39ns/93ns
480V, 6.5A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IHW20N120R5XKSA1
Infineon Technologies

IGBT 1200V 40A 288W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
  • Power - Max: 288W
  • Switching Energy: 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: -/260ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,632
1200V
40A
60A
1.75V @ 15V, 20A
288W
750µJ (off)
Standard
170nC
-/260ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKD06N60RAATMA1
Infineon Technologies

IGBT 600V 12A 100W TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 110µJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 12ns/127ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,128
600V
12A
18A
2.1V @ 15V, 6A
100W
110µJ (on), 220µJ (off)
Standard
48nC
12ns/127ns
400V, 6A, 23 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
ISL9V2040D3ST
Fairchild/ON Semiconductor

IGBT 430V 10A 130W TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
  • Power - Max: 130W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: -/3.64µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,920
430V
10A
-
1.9V @ 4V, 6A
130W
-
Logic
12nC
-/3.64µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
hot HGTG20N60A4
Fairchild/ON Semiconductor

IGBT 600V 70A 290W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 105µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: 15ns/73ns
  • Test Condition: 390V, 20A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고432,624
600V
70A
280A
2.7V @ 15V, 20A
290W
105µJ (on), 150µJ (off)
Standard
142nC
15ns/73ns
390V, 20A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IGC36T120T8LX1SA1
Infineon Technologies

IGBT 1200V 35A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 35A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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1200 V
-
105 A
2.07V @ 15V, 35A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRG7S313UTRLPBF
Infineon Technologies

IGBT PDP 330V 40A D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 60A
  • Power - Max: 78 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 33 nC
  • Td (on/off) @ 25°C: 1ns/65ns
  • Test Condition: 196V, 12A, 10Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: -
Request a Quote
330 V
40 A
-
2.14V @ 15V, 60A
78 W
-
Standard
33 nC
1ns/65ns
196V, 12A, 10Ohm
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
STGB20H65DFB2
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 20

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 147 W
  • Switching Energy: 265µJ (on), 214µJ (off)
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: 16ns/78.8ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 215 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
  • Supplier Device Package: D2PAK-3
패키지: -
재고117
650 V
40 A
60 A
2.1V @ 15V, 20A
147 W
265µJ (on), 214µJ (off)
Standard
56 nC
16ns/78.8ns
400V, 20A, 10Ohm, 15V
215 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
D2PAK-3
IGC99T120T8RQX1SA1
Infineon Technologies

IGBT CHIP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
1200 V
100 A
300 A
2.42V @ 15V, 100A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
STGWA40H65FB
STMicroelectronics

IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 283 W
  • Switching Energy: 498µJ (on), 363µJ (off)
  • Input Type: Standard
  • Gate Charge: 210 nC
  • Td (on/off) @ 25°C: 40ns/142ns
  • Test Condition: 400V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: -
재고6
650 V
80 A
160 A
2V @ 15V, 40A
283 W
498µJ (on), 363µJ (off)
Standard
210 nC
40ns/142ns
400V, 40A, 5Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
SIGC14T60NCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 15A, 18Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
21ns/110ns
300V, 15A, 18Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC04T60EX1SA2
Infineon Technologies

IGBT TRENCH FIELD ST 600V 6A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
600 V
6 A
18 A
1.9V @ 15V, 6A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IXYH85N120A4
IXYS

IGBT GENX4 1200V 85A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 300 A
  • Current - Collector Pulsed (Icm): 520 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
  • Power - Max: 1150 W
  • Switching Energy: 4.9mJ (on), 8.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 200 nC
  • Td (on/off) @ 25°C: 40ns/400ns
  • Test Condition: 600V, 60A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
패키지: -
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1200 V
300 A
520 A
1.8V @ 15V, 85A
1150 W
4.9mJ (on), 8.3mJ (off)
Standard
200 nC
40ns/400ns
600V, 60A, 5Ohm, 15V
40 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXTH)
RJU7032PJWS-00-W0
Renesas Electronics Corporation

POWER TRS1 CAR POWER IGBT DIO SA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-