페이지 13 - 트랜지스터 - JFET | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - JFET

기록 1,142
페이지  13/41
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MV2N5116
Microsemi Corporation

P CHANNEL JFET

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: TO-206AA, TO-18-3 Metal Can
재고7,600
30V
30V
25mA @ 15V
-
6V @ 1nA
27pF @ 15V
100 Ohm
500mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
TF202THC-3-TL-HX
ON Semiconductor

JFET N-CH 1MA 100MW VTFP

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,696
-
-
-
-
-
-
-
-
-
-
-
-
2N5115JAN02
Vishay Siliconix

JFET P-CH 30V TO-18

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
패키지: TO-206AA, TO-18-3 Metal Can
재고4,960
-
-
-
-
-
-
-
-
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
2N4338-2
Vishay Siliconix

MOSFET N-CH 50V 600UA TO-206AA

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 50V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-206AA (TO-18)
패키지: TO-206AA, TO-18-3 Metal Can
재고7,152
50V
-
200µA @ 15V
-
300mV @ 100nA
7pF @ 15V
-
300mW
-55°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-206AA (TO-18)
hot 2N4118A
Vishay Siliconix

MOSFET N-CH 40V 80UA TO-206AF

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-206AF (TO-72)
패키지: TO-206AF, TO-72-4 Metal Can
재고71,940
40V
-
80µA @ 10V
-
1V @ 1nA
3pF @ 10V
-
300mW
-55°C ~ 175°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-206AF (TO-72)
PN4393_D75Z
Fairchild/ON Semiconductor

JFET N-CH 30V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고2,400
30V
-
5mA @ 20V
-
500mV @ 1nA
14pF @ 20V
100 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
P1087_J18Z
Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
  • Resistance - RDS(On): 150 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고2,384
30V
-
5mA @ 20V
-
5V @ 1µA
45pF @ 15V
150 Ohm
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot 2N5458
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고50,520
25V
-
2mA @ 15V
-
1V @ 10nA
7pF @ 15V
-
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot 2N5460
ON Semiconductor

JFET P-CH 40V 0.35W TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 750mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 135°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고307,080
40V
-
1mA @ 15V
-
750mV @ 1µA
7pF @ 15V
-
350mW
-65°C ~ 135°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot MMBFJ305
Fairchild/ON Semiconductor

JFET N-CH 30V 0.225W SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 225mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: TO-236-3, SC-59, SOT-23-3
재고561,600
30V
-
8mA @ 15V
-
500mV @ 1nA
-
-
225mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
CMPF4416A TR
Central Semiconductor Corp

JFET N-CH 35V 10MA SOT23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35V
  • Drain to Source Voltage (Vdss): 35V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: TO-236-3, SC-59, SOT-23-3
재고3,360
35V
35V
5mA @ 15V
-
2.5V @ 1nA
4.5pF @ 15V
-
350mW
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
MMBFJ177_G
onsemi

JFET P-CH 30V SOT23-3

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 225 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
Request a Quote
30 V
-
1.5 mA @ 15 V
-
800 mV @ 10 nA
-
-
225 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MMBF5457LT1
onsemi

JFET N-CH 25V SOT23-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25 V
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 225 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: -
Request a Quote
25 V
25 V
1 mA @ 15 V
-
500 mV @ 10 nA
7pF @ 15V
-
225 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
MQ2N2609
Microchip Technology

JFET P-CH 30V TO18

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 5 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: -
Request a Quote
30 V
30 V
2 mA @ 5 V
-
750 mV @ 1 µA
10pF @ 5V
-
300 mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
2SK2171-5-TD-E
onsemi

NCH J-FET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
LS844-TO-71-6L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO71

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6 Metal Can
  • Supplier Device Package: TO-71
패키지: -
재고1,443
60 V
-
1.5 mA @ 15 V
-
1 V @ 1 nA
8pF @ 15V
-
400 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-71-6 Metal Can
TO-71
SST4416-SOT-23-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 30V SOT23-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 0.8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -55°C ~ 135°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고11,394
30 V
-
-
-
-
0.8pF @ 15V
-
300 mW
-55°C ~ 135°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
CP210-2N4416A-CT
Central Semiconductor Corp

JFET N-CH 35V 15MA DIE

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35 V
  • Drain to Source Voltage (Vdss): 35 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
  • Current Drain (Id) - Max: 15 mA
  • Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
35 V
35 V
5 mA @ 20 V
15 mA
2.5 V @ 1 nA
4pF @ 15V
-
-
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die
DSK9J01Q0L
Rohm Semiconductor

JFET N-CH 30MA SSMINI3-F3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: 30 mA
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 125 mW
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
패키지: -
Request a Quote
-
-
-
30 mA
-
6pF @ 10V
-
125 mW
-40°C ~ 85°C (TA)
Surface Mount
SC-89, SOT-490
SSMini3-F3-B
SMP152TR
InterFET

JFET N-Channel -20V Low Noise

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 14 mA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.2 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
  • Resistance - RDS(On): 42 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
Request a Quote
-
20 V
14 mA @ 10 V
-
1.2 V @ 1 nA
15pF @ 10V
42 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
MV2N4858UB-TR
Microchip Technology

JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MX2N4093
Microchip Technology

JFET N-CH 40V TO18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 20 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 80 Ohms
  • Power - Max: 360 mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: -
Request a Quote
40 V
40 V
8 mA @ 20 V
-
-
16pF @ 20V
80 Ohms
360 mW
-65°C ~ 175°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
2N2608
Microchip Technology

JFET P-CH 30V TO18

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 750 mV @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
패키지: -
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30 V
-
1 mA @ 5 V
-
750 mV @ 1 µA
10pF @ 5V
-
300 mW
-65°C ~ 200°C (TJ)
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18 (TO-206AA)
SMP5115TR
InterFET

JFET P-Channel 30V Low Noise

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 3.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Resistance - RDS(On): 80 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
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-
30 V
25 mA @ 15 V
-
3.5 V @ 1 nA
12pF @ 10V
80 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
CP216-2N4393-WN
Central Semiconductor Corp

JFET N-CH 40V 50MA DIE

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
  • Current Drain (Id) - Max: 50 mA
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 20V
  • Resistance - RDS(On): 100 Ohms
  • Power - Max: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
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40 V
40 V
5 mA @ 20 V
50 mA
500 mV @ 1 nA
20pF @ 20V
100 Ohms
-
-65°C ~ 175°C (TJ)
Surface Mount
Die
Die
2N5115UB-TR
Microchip Technology

JFET P-CH 30V UB

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 60 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
  • Resistance - RDS(On): 100 Ohms
  • Power - Max: 500 mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
패키지: -
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30 V
30 V
60 mA @ 15 V
-
6 V @ 1 nA
25pF @ 15V
100 Ohms
500 mW
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2N4118A-TO-72-4L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 40V TO72-4

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72-4
패키지: -
재고2,064
40 V
-
80 µA @ 10 V
-
1 V @ 1 nA
3pF @ 10V
-
300 mW
-
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72-4
J112-D27Z
onsemi

JFET N-CH 35V TO92-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 50 Ohms
  • Power - Max: 625 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92-3
패키지: -
재고60
35 V
-
5 mA @ 15 V
-
1 V @ 1 µA
-
50 Ohms
625 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3