페이지 11 - 트랜지스터 - JFET | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MV2N4393	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,816	-	-	-	-	-	-	-	-	-	-	-	-
MV2N4391UB	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,880	-	-	-	-	-	-	-	-	-	-	-	-
2N4860JAN02	Vishay Siliconix	JFET N-CH 30V TO-206 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고7,328	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
PN4092_D74Z	Fairchild/ON Semiconductor	JFET N-CH 40V 0.625W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 50 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고3,648	40V	-	15mA @ 20V	-	2V @ 1nA	16pF @ 20V	50 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N5461RLRA	ON Semiconductor	JFET P-CH 40V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -65°C ~ 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,760	40V	-	2mA @ 15V	-	1V @ 1µA	7pF @ 15V	-	350mW	-65°C ~ 135°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
P1086	Fairchild/ON Semiconductor	JFET P-CH 30V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V Resistance - RDS(On): 75 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고3,632	30V	-	10mA @ 20V	-	10V @ 1µA	45pF @ 15V	75 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J112_D11Z	Fairchild/ON Semiconductor	JFET N-CH 35V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 50 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,456	35V	-	5mA @ 15V	-	1V @ 1µA	-	50 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KSK30YTA	Fairchild/ON Semiconductor	JFET N-CH 50V 0.1W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 125°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,568	50V	-	1.2mA @ 10V	-	400mV @ 100nA	8.2pF @ 0V	-	100mW	125°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5462_D27Z	Fairchild/ON Semiconductor	JFET P-CH 40V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,184	40V	-	4mA @ 15V	-	1.8V @ 1µA	7pF @ 15V	-	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PMBFJ176,215	NXP	JFET P-CH 30V 0.3W SOT23 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS) Resistance - RDS(On): 250 Ohm Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	패키지: TO-236-3, SC-59, SOT-23-3	재고7,648	30V	30V	2mA @ 15V	-	1V @ 10nA	8pF @ 10V (VGS)	250 Ohm	300mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
PMBFJ112,215	NXP	JFET N-CH 40V 0.3W SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS) Resistance - RDS(On): 50 Ohm Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	패키지: TO-236-3, SC-59, SOT-23-3	재고4,288	40V	40V	5mA @ 15V	-	5V @ 1µA	6pF @ 10V (VGS)	50 Ohm	300mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
2N4091	Microsemi Corporation	N CHANNEL JFET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 30 Ohm Power - Max: 360mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: TO-206AA, TO-18-3 Metal Can	재고14,400	40V	40V	30mA @ 20V	-	-	16pF @ 20V	30 Ohm	360mW	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
MMBFJ201	Fairchild/ON Semiconductor	JFET N-CH 40V 350MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고1,988,844	40V	-	200µA @ 20V	-	300mV @ 10nA	-	-	350mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
PF5102	Fairchild/ON Semiconductor	JFET N-CH 40V 0.625W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 700mV @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V Resistance - RDS(On): - Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고20,040	40V	-	4mA @ 15V	-	700mV @ 1nA	16pF @ 15V	-	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J113	Fairchild/ON Semiconductor	JFET N-CH 35V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 100 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고563,040	35V	-	2mA @ 15V	-	500mV @ 1µA	-	100 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
IF170BST3TR	InterFET	JFET N-Channel -30V Low Noise FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Resistance - RDS(On): 50 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	30 V	7 mA @ 10 V	-	800 mV @ 1 nA	15pF @ 10V	50 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
MQ2N4858UB	Microchip Technology	JFET N-CH 40V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 60 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	40 V	40 V	8 mA @ 15 V	-	800 mV @ 500 pA	18pF @ 10V	60 Ohms	360 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
IFN201ST3	InterFET	JFET N-Channel -40V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.1 V @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 850 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	40 V	-	-	1.1 V @ 10 nA	-	850 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
SMP5486	InterFET	JFET N-Channel -25V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 25 V Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Resistance - RDS(On): 150 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	25 V	12 mA @ 15 V	-	4 V @ 10 nA	3.5pF @ 15V	150 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
CP210-2N4416A-WN	Central Semiconductor Corp	JFET N-CH 35V 15MA DIE FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Drain to Source Voltage (Vdss): 35 V Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V Current Drain (Id) - Max: 15 mA Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Resistance - RDS(On): - Power - Max: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	35 V	35 V	5 mA @ 20 V	15 mA	2.5 V @ 1 nA	4pF @ 15V	-	-	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
2N4861UB-TR	Microchip Technology	JFET N-CH 30V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 60 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	8 mA @ 15 V	-	800 mV @ 500 pA	18pF @ 10V	60 Ohms	360 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2N4416A-TO-72-4L-ROHS	Linear Integrated Systems, Inc.	WIDEBAND, HIGH GAIN, SINGLE, N- FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 0.8pF @ 15V Resistance - RDS(On): - Power - Max: 300 mW Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72-4	패키지: -	재고1,140	35 V	-	-	-	-	0.8pF @ 15V	-	300 mW	-55°C ~ 135°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72-4
2N5116UB-TR	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Resistance - RDS(On): 175 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	25 mA @ 15 V	-	4 V @ 1 nA	27pF @ 15V	175 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
J211-TO-92-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 25V TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Resistance - RDS(On): - Power - Max: 360 mW Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	재고3,477	25 V	-	7 mA @ 15 V	-	2.5 V @ 1 nA	4pF @ 15V	-	360 mW	-55°C ~ 150°C	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
LS841-TO-78-6L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 60V TO78-6 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V Resistance - RDS(On): - Power - Max: 400 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	재고1,488	60 V	-	500 µA @ 20 V	-	1 V @ 1 nA	10pF @ 20V	-	400 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
MX2N5116UB	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Resistance - RDS(On): 175 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	5 mA @ 15 V	-	1 V @ 1 nA	27pF @ 15V	175 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
NTE468	NTE Electronics, Inc	JFET N-CH 35V TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Drain to Source Voltage (Vdss): 35 V Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 A Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 30 Ohms Power - Max: 625 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	35 V	35 V	20 mA @ 15 V	-	3 V @ 1 A	-	30 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
174DFN-8L-ROHS	Linear Integrated Systems, Inc.	JFET P-CH 30V 50MA 8DFN FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V Current Drain (Id) - Max: 50 mA Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 85 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x2)	패키지: -	재고18,249	30 V	30 V	20 mA @ 15 V	50 mA	5 V @ 10 nA	-	85 Ohms	350 mW	-55°C ~ 135°C (TJ)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x2)

MV2N4393

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,816

-

MV2N4391UB

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,880

-

2N4860JAN02

Vishay Siliconix

JFET N-CH 30V TO-206

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고7,328

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

PN4092_D74Z

Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 50 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고3,648

40V

-

15mA @ 20V

-

2V @ 1nA

16pF @ 20V

50 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N5461RLRA

ON Semiconductor

JFET P-CH 40V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,760

40V

-

2mA @ 15V

-

1V @ 1µA

7pF @ 15V

-

350mW

-65°C ~ 135°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

P1086

Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
Resistance - RDS(On): 75 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고3,632

30V

-

10mA @ 20V

-

10V @ 1µA

45pF @ 15V

75 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J112_D11Z

Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 50 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,456

35V

-

5mA @ 15V

-

1V @ 1µA

-

50 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KSK30YTA

Fairchild/ON Semiconductor

JFET N-CH 50V 0.1W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 0V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 125°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,568

50V

-

1.2mA @ 10V

-

400mV @ 100nA

8.2pF @ 0V

-

100mW

125°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5462_D27Z

Fairchild/ON Semiconductor

JFET P-CH 40V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,184

40V

-

4mA @ 15V

-

1.8V @ 1µA

7pF @ 15V

-

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PMBFJ176,215

NXP

JFET P-CH 30V 0.3W SOT23

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
Resistance - RDS(On): 250 Ohm
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

패키지: TO-236-3, SC-59, SOT-23-3

재고7,648

30V

2mA @ 15V

-

1V @ 10nA

8pF @ 10V (VGS)

250 Ohm

300mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

PMBFJ112,215

NXP

JFET N-CH 40V 0.3W SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS)
Resistance - RDS(On): 50 Ohm
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

패키지: TO-236-3, SC-59, SOT-23-3

재고4,288

40V

5mA @ 15V

-

5V @ 1µA

6pF @ 10V (VGS)

50 Ohm

300mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

2N4091

Microsemi Corporation

N CHANNEL JFET

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 30 Ohm
Power - Max: 360mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: TO-206AA, TO-18-3 Metal Can

재고14,400

40V

30mA @ 20V

-

16pF @ 20V

30 Ohm

360mW

-65°C ~ 175°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

MMBFJ201

Fairchild/ON Semiconductor

JFET N-CH 40V 350MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고1,988,844

40V

-

200µA @ 20V

-

300mV @ 10nA

-

350mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

PF5102

Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 700mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V
Resistance - RDS(On): -
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고20,040

40V

-

4mA @ 15V

-

700mV @ 1nA

16pF @ 15V

-

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J113

Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 100 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고563,040

35V

-

2mA @ 15V

-

500mV @ 1µA

-

100 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

IF170BST3TR

InterFET

JFET N-Channel -30V Low Noise

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Resistance - RDS(On): 50 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

30 V

7 mA @ 10 V

-

800 mV @ 1 nA

15pF @ 10V

50 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

MQ2N4858UB

Microchip Technology

JFET N-CH 40V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 60 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

40 V

8 mA @ 15 V

-

800 mV @ 500 pA

18pF @ 10V

60 Ohms

360 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

IFN201ST3

InterFET

JFET N-Channel -40V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.1 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 850 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

40 V

-

1.1 V @ 10 nA

-

850 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

SMP5486

InterFET

JFET N-Channel -25V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 25 V
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Resistance - RDS(On): 150 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

25 V

12 mA @ 15 V

-

4 V @ 10 nA

3.5pF @ 15V

150 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

CP210-2N4416A-WN

Central Semiconductor Corp

JFET N-CH 35V 15MA DIE

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Drain to Source Voltage (Vdss): 35 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
Current Drain (Id) - Max: 15 mA
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

35 V

5 mA @ 20 V

15 mA

2.5 V @ 1 nA

4pF @ 15V

-

-65°C ~ 150°C (TJ)

Surface Mount

Die

2N4861UB-TR

Microchip Technology

JFET N-CH 30V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 60 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

8 mA @ 15 V

-

800 mV @ 500 pA

18pF @ 10V

60 Ohms

360 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2N4416A-TO-72-4L-ROHS

Linear Integrated Systems, Inc.

WIDEBAND, HIGH GAIN, SINGLE, N-

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 0.8pF @ 15V
Resistance - RDS(On): -
Power - Max: 300 mW
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72-4

패키지: -

재고1,140

35 V

-

0.8pF @ 15V

-

300 mW

-55°C ~ 135°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72-4

2N5116UB-TR

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Resistance - RDS(On): 175 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

25 mA @ 15 V

-

4 V @ 1 nA

27pF @ 15V

175 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

J211-TO-92-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 25V TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 7 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Resistance - RDS(On): -
Power - Max: 360 mW
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

재고3,477

25 V

-

7 mA @ 15 V

-

2.5 V @ 1 nA

4pF @ 15V

-

360 mW

-55°C ~ 150°C

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

LS841-TO-78-6L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO78-6

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V
Resistance - RDS(On): -
Power - Max: 400 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: -

재고1,488

60 V

-

500 µA @ 20 V

-

1 V @ 1 nA

10pF @ 20V

-

400 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

MX2N5116UB

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Resistance - RDS(On): 175 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

5 mA @ 15 V

-

1 V @ 1 nA

27pF @ 15V

175 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

NTE468

NTE Electronics, Inc

JFET N-CH 35V TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Drain to Source Voltage (Vdss): 35 V
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 A
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 30 Ohms
Power - Max: 625 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

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35 V

20 mA @ 15 V

-

3 V @ 1 A

-

30 Ohms

625 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

174DFN-8L-ROHS

Linear Integrated Systems, Inc.

JFET P-CH 30V 50MA 8DFN

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Current Drain (Id) - Max: 50 mA
Voltage - Cutoff (VGS off) @ Id: 5 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 85 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x2)

패키지: -

재고18,249

30 V

20 mA @ 15 V

50 mA

5 V @ 10 nA

-

85 Ohms

350 mW

-55°C ~ 135°C (TJ)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x2)