페이지 2 - 트랜지스터 - JFET | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MV2N4860	Microsemi Corporation	N CHANNEL JFET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 40 Ohm Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: TO-206AA, TO-18-3 Metal Can	재고3,040	30V	30V	100mA @ 15V	-	6V @ 500pA	18pF @ 10V	40 Ohm	360mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2N3822	Microsemi Corporation	N CHANNEL JFET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Drain to Source Voltage (Vdss): 50V Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: TO-206AF, TO-72-4 Metal Can	재고3,968	50V	50V	10mA @ 15V	-	6V @ 500pA	6pF @ 15V	-	300mW	-55°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
SST5486-E3	Vishay Siliconix	JFET P-CH 35V 8MA SOT-23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고7,024	25V	-	8mA @ 15V	-	2V @ 10nA	5pF @ 15V	-	350mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
J112RLRAG	ON Semiconductor	JFET N-CH 35V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 50 Ohm Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고556,920	35V	-	5mA @ 15V	-	1V @ 1µA	-	50 Ohm	350mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
TF256TH-4-TL-H	ON Semiconductor	JFET N-CH 1MA 100MW VTFP FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-VTFP	패키지: 3-SMD, Flat Leads	재고2,640	-	-	140µA @ 2V	1mA	100mV @ 1µA	3.1pF @ 2V	-	100mW	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-VTFP
PN4117A_D26Z	Fairchild/ON Semiconductor	JFET N-CH 40V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 30µA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 600mV @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,864	40V	-	30µA @ 10V	-	600mV @ 1nA	3pF @ 10V	-	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
J108_D27Z	Fairchild/ON Semiconductor	JFET N-CH 25V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 8 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,032	25V	-	80mA @ 15V	-	3V @ 10nA	-	8 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N4391UB	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,136	-	-	-	-	-	-	-	-	-	-	-	-
CPH6904-TL-E	ON Semiconductor	JFET 2N-CH 0.7W CPH6 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 5V Current Drain (Id) - Max: 50mA Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V Resistance - RDS(On): - Power - Max: 700mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-CPH	패키지: SC-74, SOT-457	재고7,120	-	-	20mA @ 5V	50mA	600mV @ 100µA	6pF @ 5V	-	700mW	150°C (TJ)	Surface Mount	SC-74, SOT-457	6-CPH
MMBF4393LT3G	ON Semiconductor	JFET N-CH 30V 0.225W SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V Resistance - RDS(On): 100 Ohm Power - Max: 225mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고6,032	30V	30V	5mA @ 15V	-	500mV @ 10nA	14pF @ 15V	100 Ohm	225mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
J106	Fairchild/ON Semiconductor	JFET N-CH 25V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 6 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고26,430	25V	-	200mA @ 15V	-	2V @ 1µA	-	6 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
CMPFJ176 TR	Central Semiconductor Corp	IC JFET P-CH SOT23-3 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 250 Ohm Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고3,680	30V	-	2mA @ 15V	-	1V @ 10nA	-	250 Ohm	350mW	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
CMPFJ175 TR	Central Semiconductor Corp	IC JFET P-CH SOT23-3 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 125 Ohm Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236, SC-59, SOT-23-3 variant, 3-SMD Supplier Device Package: SOT-23	패키지: TO-236, SC-59, SOT-23-3 variant, 3-SMD	재고2,576	30V	-	7mA @ 15V	-	3V @ 10nA	-	125 Ohm	350mW	-65°C ~ 150°C (TJ)	Surface Mount	TO-236, SC-59, SOT-23-3 variant, 3-SMD	SOT-23
MMBF4091	Fairchild/ON Semiconductor	JFET N-CH 40V 350MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 30 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,424	40V	-	30mA @ 20V	-	5V @ 1nA	16pF @ 20V	30 Ohm	350mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
J113_D74Z	Fairchild/ON Semiconductor	JFET N-CH 35V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 100 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,848	35V	-	2mA @ 15V	-	500mV @ 1µA	-	100 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2SK937Y4-AA	onsemi	NCH J-FET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NTE2938	NTE Electronics, Inc	JFET P-CH 30V TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 300 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	Request a Quote	30 V	30 V	1.5 mA @ 15 V	-	800 mV @ 10 nA	-	300 Ohms	350 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
SMP5485TR	InterFET	JFET N-Channel -25V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 25 V Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Resistance - RDS(On): 220 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	25 V	6 mA @ 15 V	-	2.5 V @ 10 nA	3.5pF @ 15V	220 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
SMPJ109TR	InterFET	JFET N-Channel -25V Low Noise FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 25 V Current - Drain (Idss) @ Vds (Vgs=0): 240 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3.5 V @ 0.5 nA Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 0V Resistance - RDS(On): 10 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	25 V	240 mA @ 15 V	-	3.5 V @ 0.5 nA	28pF @ 0V	10 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
MX2N5116UB-TR	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Resistance - RDS(On): 175 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	5 mA @ 15 V	-	1 V @ 1 nA	27pF @ 15V	175 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2N4856UB-TR	Microchip Technology	JFET N-CH 40V FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 25 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	40 V	40 V	175 mA @ 15 V	-	10 V @ 500 pA	18pF @ 10V	25 Ohms	360 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
MV2N4391UB-TR	Microchip Technology	JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
2SK2170-TL-E	onsemi	NCH J-FET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
LS3956-TO-71-6L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 60V TO71 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 20V Resistance - RDS(On): - Power - Max: 400 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-71-6 Metal Can Supplier Device Package: TO-71	패키지: -	재고1,494	60 V	-	500 µA @ 20 V	-	1 V @ 1 nA	6pF @ 20V	-	400 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-71-6 Metal Can	TO-71
2SK212D-SPA	onsemi	NCH J-FET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
2N4860UB-TR	Microchip Technology	JFET N-CH 30V FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 40 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	100 mA @ 15 V	-	6 V @ 500 pA	18pF @ 10V	40 Ohms	360 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
SST405-SOIC-8L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 50V 8SOIC FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 50 V Drain to Source Voltage (Vdss): 50 V Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V Resistance - RDS(On): - Power - Max: 300 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고14,871	50 V	50 V	500 µA @ 10 V	-	500 mV @ 1 nA	8pF @ 15V	-	300 mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MQ2N4092UB	Microchip Technology	JFET N-CH 40V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 50 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	40 V	40 V	15 mA @ 20 V	-	-	16pF @ 20V	50 Ohms	360 mW	-65°C ~ 175°C (TJ)	Surface Mount	3-SMD, No Lead	UB

MV2N4860

Microsemi Corporation

N CHANNEL JFET

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 40 Ohm
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: TO-206AA, TO-18-3 Metal Can

재고3,040

30V

100mA @ 15V

-

6V @ 500pA

18pF @ 10V

40 Ohm

360mW

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

2N3822

Microsemi Corporation

N CHANNEL JFET

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 50V
Drain to Source Voltage (Vdss): 50V
Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: TO-206AF, TO-72-4 Metal Can

재고3,968

50V

10mA @ 15V

-

6V @ 500pA

6pF @ 15V

-

300mW

-55°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

SST5486-E3

Vishay Siliconix

JFET P-CH 35V 8MA SOT-23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고7,024

25V

-

8mA @ 15V

-

2V @ 10nA

5pF @ 15V

-

350mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

J112RLRAG

ON Semiconductor

JFET N-CH 35V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 50 Ohm
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고556,920

35V

-

5mA @ 15V

-

1V @ 1µA

-

50 Ohm

350mW

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

TF256TH-4-TL-H

ON Semiconductor

JFET N-CH 1MA 100MW VTFP

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-VTFP

패키지: 3-SMD, Flat Leads

재고2,640

-

140µA @ 2V

1mA

100mV @ 1µA

3.1pF @ 2V

-

100mW

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-VTFP

PN4117A_D26Z

Fairchild/ON Semiconductor

JFET N-CH 40V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 30µA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 600mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,864

40V

-

30µA @ 10V

-

600mV @ 1nA

3pF @ 10V

-

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

J108_D27Z

Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 8 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,032

25V

-

80mA @ 15V

-

3V @ 10nA

-

8 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N4391UB

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,136

-

CPH6904-TL-E

ON Semiconductor

JFET 2N-CH 0.7W CPH6

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 5V
Current Drain (Id) - Max: 50mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100µA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V
Resistance - RDS(On): -
Power - Max: 700mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-CPH

패키지: SC-74, SOT-457

재고7,120

-

20mA @ 5V

50mA

600mV @ 100µA

6pF @ 5V

-

700mW

150°C (TJ)

Surface Mount

SC-74, SOT-457

6-CPH

MMBF4393LT3G

ON Semiconductor

JFET N-CH 30V 0.225W SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Resistance - RDS(On): 100 Ohm
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고6,032

30V

5mA @ 15V

-

500mV @ 10nA

14pF @ 15V

100 Ohm

225mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

J106

Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 6 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고26,430

25V

-

200mA @ 15V

-

2V @ 1µA

-

6 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

CMPFJ176 TR

Central Semiconductor Corp

IC JFET P-CH SOT23-3

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 250 Ohm
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고3,680

30V

-

2mA @ 15V

-

1V @ 10nA

-

250 Ohm

350mW

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

CMPFJ175 TR

Central Semiconductor Corp

IC JFET P-CH SOT23-3

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 125 Ohm
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236, SC-59, SOT-23-3 variant, 3-SMD
Supplier Device Package: SOT-23

패키지: TO-236, SC-59, SOT-23-3 variant, 3-SMD

재고2,576

30V

-

7mA @ 15V

-

3V @ 10nA

-

125 Ohm

350mW

-65°C ~ 150°C (TJ)

Surface Mount

TO-236, SC-59, SOT-23-3 variant, 3-SMD

SOT-23

MMBF4091

Fairchild/ON Semiconductor

JFET N-CH 40V 350MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 5V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 30 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,424

40V

-

30mA @ 20V

-

5V @ 1nA

16pF @ 20V

30 Ohm

350mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

J113_D74Z

Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 100 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,848

35V

-

2mA @ 15V

-

500mV @ 1µA

-

100 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2SK937Y4-AA

onsemi

NCH J-FET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

NTE2938

NTE Electronics, Inc

JFET P-CH 30V TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 300 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

Request a Quote

30 V

1.5 mA @ 15 V

-

800 mV @ 10 nA

-

300 Ohms

350 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

SMP5485TR

InterFET

JFET N-Channel -25V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 25 V
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Resistance - RDS(On): 220 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

25 V

6 mA @ 15 V

-

2.5 V @ 10 nA

3.5pF @ 15V

220 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

SMPJ109TR

InterFET

JFET N-Channel -25V Low Noise

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 25 V
Current - Drain (Idss) @ Vds (Vgs=0): 240 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3.5 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 0V
Resistance - RDS(On): 10 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

25 V

240 mA @ 15 V

-

3.5 V @ 0.5 nA

28pF @ 0V

10 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

MX2N5116UB-TR

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Resistance - RDS(On): 175 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

5 mA @ 15 V

-

1 V @ 1 nA

27pF @ 15V

175 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2N4856UB-TR

Microchip Technology

JFET N-CH 40V

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 175 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 10 V @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 25 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

40 V

175 mA @ 15 V

-

10 V @ 500 pA

18pF @ 10V

25 Ohms

360 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

MV2N4391UB-TR

Microchip Technology

JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2SK2170-TL-E

onsemi

NCH J-FET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

LS3956-TO-71-6L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO71

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 20V
Resistance - RDS(On): -
Power - Max: 400 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-71-6 Metal Can
Supplier Device Package: TO-71

패키지: -

재고1,494

60 V

-

500 µA @ 20 V

-

1 V @ 1 nA

6pF @ 20V

-

400 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-71-6 Metal Can

TO-71

2SK212D-SPA

onsemi

NCH J-FET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

2N4860UB-TR

Microchip Technology

JFET N-CH 30V

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 40 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

100 mA @ 15 V

-

6 V @ 500 pA

18pF @ 10V

40 Ohms

360 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

SST405-SOIC-8L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 50V 8SOIC

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 50 V
Drain to Source Voltage (Vdss): 50 V
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Resistance - RDS(On): -
Power - Max: 300 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고14,871

50 V

500 µA @ 10 V

-

500 mV @ 1 nA

8pF @ 15V

-

300 mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MQ2N4092UB

Microchip Technology

JFET N-CH 40V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 50 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

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40 V

15 mA @ 20 V

-

16pF @ 20V

50 Ohms

360 mW

-65°C ~ 175°C (TJ)

Surface Mount

3-SMD, No Lead

UB