페이지 3 - 트랜지스터 - JFET | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
J175	Central Semiconductor Corp	JFET P-CHAN 30V TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 10V (VGS) Resistance - RDS(On): 125 Ohm Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고11,148	30V	-	7mA @ 15V	-	3V @ 10nA	5.5pF @ 10V (VGS)	125 Ohm	350mW	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92
MV2N4860UB	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,168	-	-	-	-	-	-	-	-	-	-	-	-
2SK596S-A	ON Semiconductor	JFET N-CH 0.1W FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-72 Supplier Device Package: 3-SPA	패키지: SC-72	재고6,976	-	-	100µA @ 5V	1mA	500mV @ 1µA	4.1pF @ 5V	-	100mW	150°C (TJ)	Through Hole	SC-72	3-SPA
SST5484-T1-E3	Vishay Siliconix	JFET P-CH 35V 1MA SOT-23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고73,200	25V	-	1mA @ 15V	-	300mV @ 10nA	5pF @ 15V	-	350mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2N4859JTXL02	Vishay Siliconix	JFET N-CH 30V 360MW TO-18 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고2,896	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N4857JTXL02	Vishay Siliconix	JFET N-CH 40V 360MA TO-18 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고6,304	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
TF256-3-TL-H	ON Semiconductor	JFET N-CH 1MA 30MW USFP FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 2V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V Resistance - RDS(On): - Power - Max: 30mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-USFP	패키지: 3-SMD, Flat Leads	재고5,424	-	-	100µA @ 2V	1mA	100mV @ 1µA	3.1pF @ 2V	-	30mW	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-USFP
U1898_D27Z	Fairchild/ON Semiconductor	JFET N-CH 40V 0.625W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 50 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고7,360	40V	-	15mA @ 20V	-	2V @ 1nA	16pF @ 20V	50 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
TIS75_D75Z	Fairchild/ON Semiconductor	JFET N-CH 30V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800mV @ 4nA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS) Resistance - RDS(On): 60 Ohm Power - Max: 350mW Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,384	30V	-	8mA @ 15V	-	800mV @ 4nA	18pF @ 10V (VGS)	60 Ohm	350mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BFR31LT1	ON Semiconductor	JFET N-CH 225MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2.5V @ 0.5nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Resistance - RDS(On): - Power - Max: 225mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	패키지: TO-236-3, SC-59, SOT-23-3	재고28,716	-	25V	1mA @ 10V	-	2.5V @ 0.5nA	5pF @ 10V	-	225mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
PN5434	Fairchild/ON Semiconductor	JFET N-CH 25V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 3nA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS) Resistance - RDS(On): 10 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고2,528	25V	-	30mA @ 15V	-	1V @ 3nA	30pF @ 10V (VGS)	10 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J176	Fairchild/ON Semiconductor	JFET P-CH 30V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 250 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고285,240	30V	-	2mA @ 15V	-	1V @ 10nA	-	250 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J174_D74Z	Fairchild/ON Semiconductor	JFET P-CH 30V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 85 Ohm Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고2,064	30V	-	20mA @ 15V	-	5V @ 10nA	-	85 Ohm	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN598JATA	Fairchild/ON Semiconductor	JFET N-CH 20V 0.15W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 20V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V Resistance - RDS(On): - Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,704	20V	-	100µA @ 5V	1mA	600mV @ 1µA	3.5pF @ 5V	-	150mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
PMBFJ620,115	NXP	JFET 2N-CH 25V 0.19W 6TSSOP FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Resistance - RDS(On): 50 Ohm Power - Max: 190mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	패키지: 6-TSSOP, SC-88, SOT-363	재고6,048	25V	25V	24mA @ 10V	-	2V @ 1µA	5pF @ 10V	50 Ohm	190mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
2N4860UB	Microsemi Corporation	N CHANNEL JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,248	-	-	-	-	-	-	-	-	-	-	-	-
2N4117A	Fairchild/Micross Components	DIE MOSFET N-CH 40V FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고16,968	-	-	-	-	-	-	-	-	-	-	-	-
2SK545-11D-TB-E	ON Semiconductor	JFET N-CH 1MA 125MW CP FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 60µA @ 10V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 1.5V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V Resistance - RDS(On): - Power - Max: 125mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	패키지: TO-236-3, SC-59, SOT-23-3	재고4,016	-	40V	60µA @ 10V	1mA	1.5V @ 1µA	1.7pF @ 10V	-	125mW	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
2SK275100L	Panasonic Electronic Components	JFET N-CH 10MA 200MW MINI-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1.4µA @ 10V Current Drain (Id) - Max: 10mA Voltage - Cutoff (VGS off) @ Id: 3.5V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Resistance - RDS(On): - Power - Max: 200mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	패키지: TO-236-3, SC-59, SOT-23-3	재고6,192	-	-	1.4µA @ 10V	10mA	3.5V @ 1µA	5pF @ 10V	-	200mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
PMBFJ110,215	NXP	JFET N-CH 25V 250MW SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS) Resistance - RDS(On): 18 Ohm Power - Max: 250mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 (TO-236AB)	패키지: TO-236-3, SC-59, SOT-23-3	재고89,670	25V	25V	10mA @ 15V	-	4V @ 1µA	30pF @ 10V (VGS)	18 Ohm	250mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23 (TO-236AB)
MV2N5114UB-TR	Microchip Technology	JFET P-CH 30V UB FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Resistance - RDS(On): 75 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	30 mA @ 18 V	-	5 V @ 1 nA	25pF @ 15V	75 Ohms	500 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
U421-TO-78-7L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 40V TO78-7 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V Resistance - RDS(On): - Power - Max: 500 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-7 Metal Can Supplier Device Package: TO-78-7	패키지: -	재고1,485	40 V	-	-	-	-	3pF @ 10V	-	500 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-78-7 Metal Can	TO-78-7
SMP4393TR	InterFET	JFET N-Channel -40V Low Noise FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V Resistance - RDS(On): 70 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	40 V	12 mA @ 20 V	-	1.5 V @ 1 nA	13pF @ 20V	70 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
J201-TO-92-3L-ROHS	Linear Integrated Systems, Inc.	JFET N-CH 40V 10MA TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V Current Drain (Id) - Max: 10 mA Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V Resistance - RDS(On): - Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	재고741	40 V	40 V	200 µA @ 15 V	10 mA	300 mV @ 10 nA	4.5pF @ 15V	-	350 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
IF1320ST3	InterFET	JFET N-Channel -20V Low Noise FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 20 V Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.1 V @ 0.5 nA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Resistance - RDS(On): 50 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	20 V	10 mA @ 10 V	-	1.1 V @ 0.5 nA	15pF @ 10V	50 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
SST174-SOT-23-3L-ROHS	Linear Integrated Systems, Inc.	JFET P-CH 30V SOT23-3 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 85 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	재고24,726	30 V	-	-	-	-	-	85 Ohms	350 mW	-55°C ~ 135°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
J112-D74Z	onsemi	JFET N-CH 35V TO92-3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 50 Ohms Power - Max: 625 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92-3	패키지: -	Request a Quote	35 V	-	5 mA @ 15 V	-	1 V @ 1 µA	-	50 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
MV2N4861UB	Microchip Technology	JFET N-CH 30V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 60 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	8 mA @ 15 V	-	800 mV @ 500 pA	18pF @ 10V	60 Ohms	360 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB

J175

Central Semiconductor Corp

JFET P-CHAN 30V TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 5.5pF @ 10V (VGS)
Resistance - RDS(On): 125 Ohm
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고11,148

30V

-

7mA @ 15V

-

3V @ 10nA

5.5pF @ 10V (VGS)

125 Ohm

350mW

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92

MV2N4860UB

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,168

-

2SK596S-A

ON Semiconductor

JFET N-CH 0.1W

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 4.1pF @ 5V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72
Supplier Device Package: 3-SPA

패키지: SC-72

재고6,976

-

100µA @ 5V

1mA

500mV @ 1µA

4.1pF @ 5V

-

100mW

150°C (TJ)

Through Hole

SC-72

3-SPA

SST5484-T1-E3

Vishay Siliconix

JFET P-CH 35V 1MA SOT-23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고73,200

25V

-

1mA @ 15V

-

300mV @ 10nA

5pF @ 15V

-

350mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2N4859JTXL02

Vishay Siliconix

JFET N-CH 30V 360MW TO-18

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고2,896

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N4857JTXL02

Vishay Siliconix

JFET N-CH 40V 360MA TO-18

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고6,304

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

TF256-3-TL-H

ON Semiconductor

JFET N-CH 1MA 30MW USFP

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 2V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Resistance - RDS(On): -
Power - Max: 30mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-USFP

패키지: 3-SMD, Flat Leads

재고5,424

-

100µA @ 2V

1mA

100mV @ 1µA

3.1pF @ 2V

-

30mW

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-USFP

U1898_D27Z

Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 50 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고7,360

40V

-

15mA @ 20V

-

2V @ 1nA

16pF @ 20V

50 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

TIS75_D75Z

Fairchild/ON Semiconductor

JFET N-CH 30V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800mV @ 4nA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Resistance - RDS(On): 60 Ohm
Power - Max: 350mW
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,384

30V

-

8mA @ 15V

-

800mV @ 4nA

18pF @ 10V (VGS)

60 Ohm

350mW

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BFR31LT1

ON Semiconductor

JFET N-CH 225MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2.5V @ 0.5nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Resistance - RDS(On): -
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

패키지: TO-236-3, SC-59, SOT-23-3

재고28,716

-

25V

1mA @ 10V

-

2.5V @ 0.5nA

5pF @ 10V

-

225mW

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

PN5434

Fairchild/ON Semiconductor

JFET N-CH 25V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 3nA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
Resistance - RDS(On): 10 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고2,528

25V

-

30mA @ 15V

-

1V @ 3nA

30pF @ 10V (VGS)

10 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J176

Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 250 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고285,240

30V

-

2mA @ 15V

-

1V @ 10nA

-

250 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

J174_D74Z

Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 85 Ohm
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고2,064

30V

-

20mA @ 15V

-

5V @ 10nA

-

85 Ohm

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

FJN598JATA

Fairchild/ON Semiconductor

JFET N-CH 20V 0.15W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 20V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Resistance - RDS(On): -
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,704

20V

-

100µA @ 5V

1mA

600mV @ 1µA

3.5pF @ 5V

-

150mW

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

PMBFJ620,115

NXP

JFET 2N-CH 25V 0.19W 6TSSOP

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Resistance - RDS(On): 50 Ohm
Power - Max: 190mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

패키지: 6-TSSOP, SC-88, SOT-363

재고6,048

25V

24mA @ 10V

-

2V @ 1µA

5pF @ 10V

50 Ohm

190mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

2N4860UB

Microsemi Corporation

N CHANNEL JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,248

-

2N4117A

Fairchild/Micross Components

DIE MOSFET N-CH 40V

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고16,968

-

2SK545-11D-TB-E

ON Semiconductor

JFET N-CH 1MA 125MW CP

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 60µA @ 10V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 1.7pF @ 10V
Resistance - RDS(On): -
Power - Max: 125mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

패키지: TO-236-3, SC-59, SOT-23-3

재고4,016

-

40V

60µA @ 10V

1mA

1.5V @ 1µA

1.7pF @ 10V

-

125mW

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

2SK275100L

Panasonic Electronic Components

JFET N-CH 10MA 200MW MINI-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1.4µA @ 10V
Current Drain (Id) - Max: 10mA
Voltage - Cutoff (VGS off) @ Id: 3.5V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Resistance - RDS(On): -
Power - Max: 200mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

패키지: TO-236-3, SC-59, SOT-23-3

재고6,192

-

1.4µA @ 10V

10mA

3.5V @ 1µA

5pF @ 10V

-

200mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

PMBFJ110,215

NXP

JFET N-CH 25V 250MW SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
Resistance - RDS(On): 18 Ohm
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)

패키지: TO-236-3, SC-59, SOT-23-3

재고89,670

25V

10mA @ 15V

-

4V @ 1µA

30pF @ 10V (VGS)

18 Ohm

250mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23 (TO-236AB)

MV2N5114UB-TR

Microchip Technology

JFET P-CH 30V UB

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 18 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Resistance - RDS(On): 75 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

30 mA @ 18 V

-

5 V @ 1 nA

25pF @ 15V

75 Ohms

500 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

U421-TO-78-7L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 40V TO78-7

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Resistance - RDS(On): -
Power - Max: 500 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-7 Metal Can
Supplier Device Package: TO-78-7

패키지: -

재고1,485

40 V

-

3pF @ 10V

-

500 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-78-7 Metal Can

TO-78-7

SMP4393TR

InterFET

JFET N-Channel -40V Low Noise

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
Resistance - RDS(On): 70 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

40 V

12 mA @ 20 V

-

1.5 V @ 1 nA

13pF @ 20V

70 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

J201-TO-92-3L-ROHS

Linear Integrated Systems, Inc.

JFET N-CH 40V 10MA TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
Current Drain (Id) - Max: 10 mA
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Resistance - RDS(On): -
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

재고741

40 V

200 µA @ 15 V

10 mA

300 mV @ 10 nA

4.5pF @ 15V

-

350 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

IF1320ST3

InterFET

JFET N-Channel -20V Low Noise

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 20 V
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.1 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Resistance - RDS(On): 50 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

20 V

10 mA @ 10 V

-

1.1 V @ 0.5 nA

15pF @ 10V

50 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

SST174-SOT-23-3L-ROHS

Linear Integrated Systems, Inc.

JFET P-CH 30V SOT23-3

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 85 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

재고24,726

30 V

-

85 Ohms

350 mW

-55°C ~ 135°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

J112-D74Z

onsemi

JFET N-CH 35V TO92-3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 50 Ohms
Power - Max: 625 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3

패키지: -

Request a Quote

35 V

-

5 mA @ 15 V

-

1 V @ 1 µA

-

50 Ohms

625 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

TO-92-3

MV2N4861UB

Microchip Technology

JFET N-CH 30V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 60 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

8 mA @ 15 V

-

800 mV @ 500 pA

18pF @ 10V

60 Ohms

360 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB