페이지 24 - 트랜지스터 - JFET | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TF252TH-4A-TL-H	ON Semiconductor	JFET N-CH 1MA 100MW FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: VTFP	패키지: 3-SMD, Flat Leads	재고7,584	-	-	140µA @ 2V	1mA	100mV @ 1µA	3.1pF @ 2V	-	100mW	-	Surface Mount	3-SMD, Flat Leads	VTFP
TF202THC-L5-TL-H	ON Semiconductor	JFET N-CH 1MA 100MW FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 5V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: VTFP	패키지: 3-SMD, Flat Leads	재고3,104	-	-	210µA @ 5V	1mA	200mV @ 1µA	3.5pF @ 5V	-	100mW	-	Surface Mount	3-SMD, Flat Leads	VTFP
2N5114-E3	Vishay Siliconix	JFET P-CH 30V TO-206AA FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고3,808	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N4861JAN02	Vishay Siliconix	JFET N-CH 30V TO-206 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고3,344	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N4393-E3	Vishay Siliconix	MOSFET N-CH 40V .1NA TO-18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 100 Ohm Power - Max: 1.8W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고6,400	40V	-	5mA @ 20V	-	500mV @ 1nA	14pF @ 20V	100 Ohm	1.8W	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
J202_D74Z	Fairchild/ON Semiconductor	JFET N-CH 40V 0.625W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 900µA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,400	40V	-	900µA @ 20V	-	800mV @ 10nA	-	-	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
J113_D27Z	Fairchild/ON Semiconductor	JFET N-CH 35V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 100 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고6,288	35V	-	2mA @ 15V	-	500mV @ 1µA	-	100 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJZ594JCTF	Fairchild/ON Semiconductor	JFET N-CH 20V 0.1W SOT623F FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 20V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-623F Supplier Device Package: SOT-623F	패키지: SOT-623F	재고4,112	20V	-	150µA @ 5V	1mA	600mV @ 1µA	3.5pF @ 5V	-	100mW	150°C (TJ)	Surface Mount	SOT-623F	SOT-623F
FJN598JBBU	Fairchild/ON Semiconductor	JFET N-CH 20V 0.15W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 20V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V Resistance - RDS(On): - Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고6,352	20V	-	100µA @ 5V	1mA	600mV @ 1µA	3.5pF @ 5V	-	150mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BF247A	Fairchild/ON Semiconductor	JFET N-CH 25V 0.35W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고2,112	25V	-	30mA @ 15V	-	600mV @ 100nA	-	-	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N5461_D74Z	Fairchild/ON Semiconductor	JFET P-CH 40V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고4,048	40V	-	2mA @ 15V	-	1V @ 1µA	7pF @ 15V	-	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5457	Fairchild/ON Semiconductor	JFET N-CH 25V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고102,144	25V	-	1mA @ 15V	-	500mV @ 10nA	7pF @ 15V	-	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
CP210-2N4416-CT20	Central Semiconductor Corp	TRANS JFET NCH 1=20PCS FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Resistance - RDS(On): - Power - Max: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고4,768	30V	30V	5mA @ 20V	-	6V @ 1nA	4pF @ 15V	-	-	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
TF412ST5G	ON Semiconductor	JFET N-CH 30V 0.1W SOT-883 XDFN3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V Current Drain (Id) - Max: 10mA Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Resistance - RDS(On): - Power - Max: 100mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: SOT-883 (XDFN3) (1x0.6)	패키지: 3-XFDFN	재고5,376	30V	30V	1.2mA @ 10V	10mA	180mV @ 1µA	4pF @ 10V	-	100mW	150°C (TJ)	Surface Mount	3-XFDFN	SOT-883 (XDFN3) (1x0.6)
J112_D26Z	Fairchild/ON Semiconductor	JFET N-CH 35V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 50 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고17,394	35V	-	5mA @ 15V	-	1V @ 1µA	-	50 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
SMP5486TR	InterFET	JFET N-Channel -25V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 25 V Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Resistance - RDS(On): 150 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	25 V	12 mA @ 15 V	-	4 V @ 10 nA	3.5pF @ 15V	150 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
MV2N4861UB-TR	Microchip Technology	JFET N-CH 30V UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 60 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	30 V	30 V	8 mA @ 15 V	-	800 mV @ 500 pA	18pF @ 10V	60 Ohms	360 mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
MQ2N2608	Microchip Technology	JFET P-CH 30V 5MA TO18 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V Current Drain (Id) - Max: 5 mA Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 µA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Resistance - RDS(On): - Power - Max: 300 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	30 V	-	1 mA @ 5 V	5 mA	6 V @ 1 µA	10pF @ 5V	-	300 mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
J174-TO-92-3L-ROHS	Linear Integrated Systems, Inc.	JFET P-CH 30V TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 85 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: -	재고8,478	30 V	-	-	-	-	-	85 Ohms	350 mW	-55°C ~ 135°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
BSV79	Central Semiconductor Corp	JFET N-CH TO18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Resistance - RDS(On): 40 Ohms Power - Max: 350 mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	패키지: -	Request a Quote	-	40 V	20 mA @ 15 V	-	2 V @ 1 nA	5pF @ 10V	40 Ohms	350 mW	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
LSK489-SOIC-8L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 60V 8SOIC FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V Resistance - RDS(On): - Power - Max: 500 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고798	60 V	-	2.5 mA @ 15 V	-	1.5 V @ 1 nA	8pF @ 15V	-	500 mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CP216-2N4856-CM	Central Semiconductor Corp	JFET N-CH 40V 50MA DIE FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V Current Drain (Id) - Max: 50 mA Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 25 Ohms Power - Max: - Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	40 V	40 V	50 mA @ 15 V	50 mA	4 V @ 0.5 nA	18pF @ 10V	25 Ohms	-	-65°C ~ 175°C (TJ)	Surface Mount	Die	Die
2N4392UB-TR	Microchip Technology	JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
LSK389B-SOIC-8L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 40V 10MA 8SOIC FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V Current Drain (Id) - Max: 10 mA Voltage - Cutoff (VGS off) @ Id: 300 mV @ 1 µA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Resistance - RDS(On): - Power - Max: 400 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고13,941	40 V	40 V	6 mA @ 10 V	10 mA	300 mV @ 1 µA	25pF @ 10V	-	400 mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
2N4091UB-TR	Microchip Technology	JFET N-CH 40V 3UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 30 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	40 V	40 V	30 mA @ 20 V	-	-	16pF @ 20V	30 Ohms	360 mW	-65°C ~ 175°C (TJ)	Surface Mount	3-SMD, No Lead	UB
MMBF4392LT1	onsemi	JFET SS N-CHAN 30V SOT23 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IFN160BST3	InterFET	JFET N-Channel -50V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 50 V Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 330 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	50 V	-	-	1 V @ 10 µA	-	330 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
LSK489A-SOIC-8L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 60V 8SOIC FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V Resistance - RDS(On): - Power - Max: 500 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고261	60 V	-	2.5 mA @ 15 V	-	1.5 V @ 1 nA	8pF @ 15V	-	500 mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

TF252TH-4A-TL-H

ON Semiconductor

JFET N-CH 1MA 100MW

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: VTFP

패키지: 3-SMD, Flat Leads

재고7,584

-

140µA @ 2V

1mA

100mV @ 1µA

3.1pF @ 2V

-

100mW

-

Surface Mount

3-SMD, Flat Leads

VTFP

TF202THC-L5-TL-H

ON Semiconductor

JFET N-CH 1MA 100MW

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 5V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 200mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: VTFP

패키지: 3-SMD, Flat Leads

재고3,104

-

210µA @ 5V

1mA

200mV @ 1µA

3.5pF @ 5V

-

100mW

-

Surface Mount

3-SMD, Flat Leads

VTFP

2N5114-E3

Vishay Siliconix

JFET P-CH 30V TO-206AA

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고3,808

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N4861JAN02

Vishay Siliconix

JFET N-CH 30V TO-206

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고3,344

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N4393-E3

Vishay Siliconix

MOSFET N-CH 40V .1NA TO-18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 100 Ohm
Power - Max: 1.8W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고6,400

40V

-

5mA @ 20V

-

500mV @ 1nA

14pF @ 20V

100 Ohm

1.8W

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

J202_D74Z

Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 900µA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,400

40V

-

900µA @ 20V

-

800mV @ 10nA

-

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

J113_D27Z

Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 100 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고6,288

35V

-

2mA @ 15V

-

500mV @ 1µA

-

100 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

FJZ594JCTF

Fairchild/ON Semiconductor

JFET N-CH 20V 0.1W SOT623F

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 20V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 150µA @ 5V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-623F
Supplier Device Package: SOT-623F

패키지: SOT-623F

재고4,112

20V

-

150µA @ 5V

1mA

600mV @ 1µA

3.5pF @ 5V

-

100mW

150°C (TJ)

Surface Mount

SOT-623F

FJN598JBBU

Fairchild/ON Semiconductor

JFET N-CH 20V 0.15W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 20V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Resistance - RDS(On): -
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고6,352

20V

-

100µA @ 5V

1mA

600mV @ 1µA

3.5pF @ 5V

-

150mW

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BF247A

Fairchild/ON Semiconductor

JFET N-CH 25V 0.35W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고2,112

25V

-

30mA @ 15V

-

600mV @ 100nA

-

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N5461_D74Z

Fairchild/ON Semiconductor

JFET P-CH 40V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고4,048

40V

-

2mA @ 15V

-

1V @ 1µA

7pF @ 15V

-

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5457

Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고102,144

25V

-

1mA @ 15V

-

500mV @ 10nA

7pF @ 15V

-

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

CP210-2N4416-CT20

Central Semiconductor Corp

TRANS JFET NCH 1=20PCS

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고4,768

30V

5mA @ 20V

-

6V @ 1nA

4pF @ 15V

-

-65°C ~ 150°C (TJ)

Surface Mount

Die

TF412ST5G

ON Semiconductor

JFET N-CH 30V 0.1W SOT-883 XDFN3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V
Current Drain (Id) - Max: 10mA
Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Resistance - RDS(On): -
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)

패키지: 3-XFDFN

재고5,376

30V

1.2mA @ 10V

10mA

180mV @ 1µA

4pF @ 10V

-

100mW

150°C (TJ)

Surface Mount

3-XFDFN

SOT-883 (XDFN3) (1x0.6)

J112_D26Z

Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 50 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고17,394

35V

-

5mA @ 15V

-

1V @ 1µA

-

50 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

SMP5486TR

InterFET

JFET N-Channel -25V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 25 V
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Resistance - RDS(On): 150 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

25 V

12 mA @ 15 V

-

4 V @ 10 nA

3.5pF @ 15V

150 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

MV2N4861UB-TR

Microchip Technology

JFET N-CH 30V UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 800 mV @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 60 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

30 V

8 mA @ 15 V

-

800 mV @ 500 pA

18pF @ 10V

60 Ohms

360 mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

MQ2N2608

Microchip Technology

JFET P-CH 30V 5MA TO18

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 5 V
Current Drain (Id) - Max: 5 mA
Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Resistance - RDS(On): -
Power - Max: 300 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

30 V

-

1 mA @ 5 V

5 mA

6 V @ 1 µA

10pF @ 5V

-

300 mW

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

J174-TO-92-3L-ROHS

Linear Integrated Systems, Inc.

JFET P-CH 30V TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 85 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: -

재고8,478

30 V

-

85 Ohms

350 mW

-55°C ~ 135°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

BSV79

Central Semiconductor Corp

JFET N-CH TO18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Resistance - RDS(On): 40 Ohms
Power - Max: 350 mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18

패키지: -

Request a Quote

-

40 V

20 mA @ 15 V

-

2 V @ 1 nA

5pF @ 10V

40 Ohms

350 mW

-65°C ~ 175°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18

LSK489-SOIC-8L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 60V 8SOIC

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Resistance - RDS(On): -
Power - Max: 500 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고798

60 V

-

2.5 mA @ 15 V

-

1.5 V @ 1 nA

8pF @ 15V

-

500 mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CP216-2N4856-CM

Central Semiconductor Corp

JFET N-CH 40V 50MA DIE

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V
Current Drain (Id) - Max: 50 mA
Voltage - Cutoff (VGS off) @ Id: 4 V @ 0.5 nA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 25 Ohms
Power - Max: -
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

40 V

50 mA @ 15 V

50 mA

4 V @ 0.5 nA

18pF @ 10V

25 Ohms

-

-65°C ~ 175°C (TJ)

Surface Mount

Die

2N4392UB-TR

Microchip Technology

JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

LSK389B-SOIC-8L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 40V 10MA 8SOIC

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Current Drain (Id) - Max: 10 mA
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Resistance - RDS(On): -
Power - Max: 400 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고13,941

40 V

6 mA @ 10 V

10 mA

300 mV @ 1 µA

25pF @ 10V

-

400 mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

2N4091UB-TR

Microchip Technology

JFET N-CH 40V 3UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 30 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

40 V

30 mA @ 20 V

-

16pF @ 20V

30 Ohms

360 mW

-65°C ~ 175°C (TJ)

Surface Mount

3-SMD, No Lead

UB

MMBF4392LT1

onsemi

JFET SS N-CHAN 30V SOT23

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IFN160BST3

InterFET

JFET N-Channel -50V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 50 V
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 330 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

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-

50 V

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1 V @ 10 µA

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330 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

LSK489A-SOIC-8L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 60V 8SOIC

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2.5 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
Resistance - RDS(On): -
Power - Max: 500 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고261

60 V

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2.5 mA @ 15 V

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1.5 V @ 1 nA

8pF @ 15V

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500 mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC