페이지 21 - 트랜지스터 - JFET | 이산 소자 반도체 제품 | Heisener Electronics
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트랜지스터 - JFET

기록 1,142
페이지  21/41
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Voltage - Cutoff (VGS off) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MX2N4391
Microsemi Corporation

N CHANNEL JFET

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,528
-
-
-
-
-
-
-
-
-
-
-
-
SST5485-E3
Vishay Siliconix

JFET P-CH 35V 4MA SOT-23

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
패키지: TO-236-3, SC-59, SOT-23-3
재고6,560
25V
-
4mA @ 15V
-
500mV @ 10nA
5pF @ 15V
-
350mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
2SK3796-2-TL-E
ON Semiconductor

JFET N-CH 10MA 100MW SMCP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Drain (Idss) @ Vds (Vgs=0): 600µA @ 10V
  • Current Drain (Id) - Max: 10mA
  • Voltage - Cutoff (VGS off) @ Id: 180mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
  • Resistance - RDS(On): 200 Ohm
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SMCP
패키지: SC-75, SOT-416
재고3,376
-
30V
600µA @ 10V
10mA
180mV @ 1µA
4pF @ 10V
200 Ohm
100mW
150°C (TJ)
Surface Mount
SC-75, SOT-416
SMCP
hot TF252TH-4-TL-H
ON Semiconductor

JFET N-CH 1MA 100MW VTFP

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
  • Current Drain (Id) - Max: 1mA
  • Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
  • Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-VTFP
패키지: 3-SMD, Flat Leads
재고67,428
-
-
140µA @ 2V
1mA
100mV @ 1µA
3.1pF @ 2V
-
100mW
150°C (TJ)
Surface Mount
3-SMD, Flat Leads
3-VTFP
PN5434_D27Z
Fairchild/ON Semiconductor

JFET N-CH 25V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1V @ 3nA
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V (VGS)
  • Resistance - RDS(On): 10 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고7,200
25V
-
30mA @ 15V
-
1V @ 3nA
30pF @ 10V (VGS)
10 Ohm
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PN4092_J18Z
Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 50 Ohm
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고3,552
40V
-
15mA @ 20V
-
2V @ 1nA
16pF @ 20V
50 Ohm
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
J177_D74Z
Fairchild/ON Semiconductor

JFET P-CH 30V 0.35W TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): 300 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,288
30V
-
1.5mA @ 15V
-
800mV @ 10nA
-
300 Ohm
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
TIS74
Fairchild/ON Semiconductor

JFET N-CH 30V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 4nA
  • Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
  • Resistance - RDS(On): 40 Ohm
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고7,328
30V
-
20mA @ 15V
-
2V @ 4nA
18pF @ 10V (VGS)
40 Ohm
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PN4119
Fairchild/ON Semiconductor

JFET N-CH 40V 0.35W TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA)
재고3,552
40V
-
200µA @ 10V
-
2V @ 1nA
3pF @ 10V
-
350mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2N5459_D74Z
Fairchild/ON Semiconductor

JFET N-CH 25V 625MW TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
  • Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,768
25V
-
4mA @ 15V
-
2V @ 10nA
7pF @ 15V
-
625mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot 2SK33720SL
Panasonic Electronic Components

JFET N-CH 2MA 100MW SSSMINI-3P

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Drain (Idss) @ Vds (Vgs=0): 107µA @ 2V
  • Current Drain (Id) - Max: 2mA
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 100mW
  • Operating Temperature: -20°C ~ 80°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SSSMini3-F1
패키지: SOT-723
재고5,262,480
-
20V
107µA @ 2V
2mA
-
-
-
100mW
-20°C ~ 80°C (TA)
Surface Mount
SOT-723
SSSMini3-F1
CP206-2N4393-CT20
Central Semiconductor Corp

JFET N-CH 40V

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Resistance - RDS(On): 100 Ohm
  • Power - Max: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고7,776
40V
-
5mA @ 20V
-
500mV @ 1nA
14pF @ 20V
100 Ohm
-
-65°C ~ 175°C (TJ)
Surface Mount
Die
Die
SMP4392TR
InterFET

JFET N-Channel -40V Low Noise

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 35 mA @ 20 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
  • Resistance - RDS(On): 45 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
Request a Quote
-
40 V
35 mA @ 20 V
-
2.5 V @ 1 nA
13pF @ 20V
45 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
SST308-SOT-23-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 25V SOT23-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 25 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
  • Resistance - RDS(On): 35 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고17,760
25 V
-
-
-
-
4pF @ 10V
35 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N4860A
Solid State Inc.

JFET N-CH 30V TO18

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 10V
  • Resistance - RDS(On): 40 Ohms
  • Power - Max: 300 mW
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
패키지: -
Request a Quote
30 V
30 V
-
-
-
10pF @ 10V
40 Ohms
300 mW
-
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
LS844-TO-78-6L-ROHS
Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO78-6

  • FET Type: 2 N-Channel (Dual)
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: -
재고1,623
60 V
-
1.5 mA @ 15 V
-
1 V @ 1 nA
8pF @ 15V
-
400 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-78-6 Metal Can
TO-78-6
MMBFJ201_G
onsemi

JFET N-CH 40V SOT23-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 20 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 300 mV @ 10 nA
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
Request a Quote
40 V
-
200 µA @ 20 V
-
300 mV @ 10 nA
-
-
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
LS320-TO-92-3L-ROHS
Linear Integrated Systems, Inc.

JFET P-CH 25MA TO92

  • FET Type: P-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: 25 mA
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V
  • Resistance - RDS(On): -
  • Power - Max: 200 mW
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
패키지: -
재고2,985
-
20 V
-
25 mA
-
8pF @ 10V
-
200 mW
-55°C ~ 125°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
SST4393-SOT-23-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 40V SOT23-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 20V
  • Resistance - RDS(On): 100 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고9,750
40 V
-
-
-
-
13pF @ 20V
100 Ohms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
LS846-TO-72-4L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 60V TO72-4

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 60 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 1.5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72-4
패키지: -
재고1,644
60 V
-
1.5 mA @ 15 V
-
1 V @ 1 nA
8pF @ 15V
-
300 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72-4
SMP4117A
InterFET

JFET N-Channel -40V Low Ciss

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 60 µA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1.2 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 1.8pF @ 10V
  • Resistance - RDS(On): 12.5 kOhms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
Request a Quote
-
40 V
60 µA @ 10 V
-
1.2 V @ 1 nA
1.8pF @ 10V
12.5 kOhms
350 mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
SOT-23-3
NTE312
NTE Electronics, Inc

JFET N-CH 30V TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 mA
  • Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 360 mW
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
패키지: -
Request a Quote
30 V
-
5 mA @ 15 V
-
1 V @ 10 mA
4.5pF @ 15V
-
360 mW
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
NTE459
NTE Electronics, Inc

JFET N-CH 50V 10MA TO72

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 50 V
  • Drain to Source Voltage (Vdss): 50 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
  • Current Drain (Id) - Max: 10 mA
  • Voltage - Cutoff (VGS off) @ Id: 6 V @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
패키지: -
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50 V
50 V
2 mA @ 15 V
10 mA
6 V @ 500 pA
6pF @ 15V
-
300 mW
175°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
CP206-2N4856-CT
Central Semiconductor Corp

JFET N-CH SWITCH CHOPPER

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
2N3823UB-TR
Microchip Technology

JFET N-CH 30V UB

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 30 V
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 4 mA @ 15 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 8 V @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 300 mW
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
패키지: -
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30 V
30 V
4 mA @ 15 V
-
8 V @ 500 pA
6pF @ 15V
-
300 mW
-55°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
LSK170D-SOT-23-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 40V SOT23-3

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): 18 mA @ 10 V
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: 400 mW
  • Operating Temperature: -55°C ~ 135°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: -
재고17,649
40 V
-
18 mA @ 10 V
-
200 mV @ 1 nA
20pF @ 15V
-
400 mW
-55°C ~ 135°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
PN4392-TO-92-3L-ROHS
Linear Integrated Systems, Inc.

JFET N-CH 40V TO92

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 40 V
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
  • Resistance - RDS(On): 60 Ohms
  • Power - Max: 350 mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
패키지: -
재고2,439
40 V
-
-
-
-
16pF @ 20V
60 Ohms
350 mW
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
CP210-2N4416A-CT20
Central Semiconductor Corp

JFET N-CH 35V 15MA DIE

  • FET Type: N-Channel
  • Voltage - Breakdown (V(BR)GSS): 35 V
  • Drain to Source Voltage (Vdss): 35 V
  • Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 20 V
  • Current Drain (Id) - Max: 15 mA
  • Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: -
Request a Quote
35 V
35 V
5 mA @ 20 V
15 mA
2.5 V @ 1 nA
4pF @ 15V
-
-
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die