페이지 8 - 트랜지스터 - JFET | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SK2394-7-FRD-TB-E	ON Semiconductor	JFET N-CH SC-59-3 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,216	-	-	-	-	-	-	-	-	-	-	-	-
MV2N4861	Microsemi Corporation	N CHANNEL JFET FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Resistance - RDS(On): 60 Ohm Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: TO-206AA, TO-18-3 Metal Can	재고5,328	30V	30V	80mA @ 15V	-	4V @ 0.5nA	18pF @ 10V	60 Ohm	360mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
2N5116UB	Microsemi Corporation	P CHANNEL JFET FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V Resistance - RDS(On): 175 Ohm Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: 3-SMD, No Lead	재고4,832	30V	30V	25mA @ 15V	-	4V @ 1nA	27pF @ 15V	175 Ohm	500mW	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UB
2N5545JTXL01	Vishay Siliconix	JFET N-CH 50V TO-71 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-71-6 Supplier Device Package: TO-71	패키지: TO-71-6	재고5,280	-	-	-	-	-	-	-	-	-	Through Hole	TO-71-6	TO-71
2N5116-E3	Vishay Siliconix	JFET P-CH 30V TO-18 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고3,424	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N5114JAN02	Vishay Siliconix	JFET P-CH 30V TO-206AA FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고5,264	-	-	-	-	-	-	-	-	-	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
2N4393	Vishay Siliconix	MOSFET N-CH 40V .1NA TO-18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 100 Ohm Power - Max: 1.8W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고14,040	40V	-	5mA @ 20V	-	500mV @ 1nA	14pF @ 20V	100 Ohm	1.8W	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-206AA (TO-18)
FJN598JCBU	Fairchild/ON Semiconductor	JFET N-CH 20V 0.15W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 20V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V Resistance - RDS(On): - Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,456	20V	-	100µA @ 5V	1mA	600mV @ 1µA	3.5pF @ 5V	-	150mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
FJN598JBTA	Fairchild/ON Semiconductor	JFET N-CH 20V 0.15W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 20V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V Current Drain (Id) - Max: 1mA Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V Resistance - RDS(On): - Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,888	20V	-	100µA @ 5V	1mA	600mV @ 1µA	3.5pF @ 5V	-	150mW	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N3820_D26Z	Fairchild/ON Semiconductor	JFET P-CH 20V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 20V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 8V @ 10µA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,488	20V	-	300µA @ 10V	-	8V @ 10µA	32pF @ 10V	-	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
2N5461	Fairchild/ON Semiconductor	JFET P-CH 40V 0.35W TO92 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고720,600	40V	-	2mA @ 15V	-	1V @ 1µA	7pF @ 15V	-	350mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N5457G	ON Semiconductor	JFET N-CH 25V 0.31W TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V Resistance - RDS(On): - Power - Max: 310mW Operating Temperature: 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,936	25V	25V	1mA @ 15V	-	500mV @ 10nA	7pF @ 15V	-	310mW	135°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N4416A	Central Semiconductor Corp	JFET N-CH 35V 0.3W TO-72 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): 35V Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Resistance - RDS(On): - Power - Max: 300mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	패키지: TO-206AF, TO-72-4 Metal Can	재고10,236	35V	35V	5mA @ 15V	-	2.5V @ 1nA	4pF @ 15V	-	300mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
CPH3910-TL-E	ON Semiconductor	MOSFET N-CH 25V .04A CPH3 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25V Drain to Source Voltage (Vdss): 25V Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 5V Current Drain (Id) - Max: 50mA Voltage - Cutoff (VGS off) @ Id: 1.8V @ 100µA Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V Resistance - RDS(On): - Power - Max: 400mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CPH	패키지: TO-236-3, SC-59, SOT-23-3	재고5,600	25V	25V	20mA @ 5V	50mA	1.8V @ 100µA	6pF @ 5V	-	400mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CPH
CMPF4392 TR	Central Semiconductor Corp	JFET N-CH 40V 50MA SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 60 Ohm Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고22,926	40V	40V	25mA @ 20V	-	2V @ 1nA	14pF @ 20V	60 Ohm	350mW	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
J111	Fairchild/ON Semiconductor	JFET N-CH 35V 625MW TO92 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): 30 Ohm Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고108,480	35V	-	20mA @ 15V	-	3V @ 1µA	-	30 Ohm	625mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
CMPFJ310-TR	Central Semiconductor Corp	JFET N-CH 25V SOT23 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25 V Drain to Source Voltage (Vdss): 25 V Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V Resistance - RDS(On): - Power - Max: 350 mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote	25 V	25 V	24 mA @ 10 V	-	2 V @ 1 nA	5pF @ 10V	-	350 mW	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
MQ2N4393UB	Microchip Technology	JFET N-CH UB FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	3-SMD, No Lead	UB
MV2N4091	Microchip Technology	JFET N-CH 40V TO18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 30 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	40 V	40 V	30 mA @ 20 V	-	-	16pF @ 20V	30 Ohms	360 mW	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
MQ2N4091	Microchip Technology	JFET N-CH 40V TO18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40 V Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 30 Ohms Power - Max: 360 mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	40 V	40 V	30 mA @ 20 V	-	-	16pF @ 20V	30 Ohms	360 mW	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
SMP5460	InterFET	JFET P-Channel 40V Low Ciss FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 40 V Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 µA Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Resistance - RDS(On): 650 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	40 V	2 mA @ 15 V	-	2 V @ 1 µA	4pF @ 15V	650 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
SMP4338	InterFET	JFET N-Channel -50V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 50 V Current - Drain (Idss) @ Vds (Vgs=0): 40 µA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 700 mV @ 100 nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 15V Resistance - RDS(On): 1.2 kOhms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	50 V	40 µA @ 15 V	-	700 mV @ 100 nA	3pF @ 15V	1.2 kOhms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
SMP4221	InterFET	JFET N-Channel -30V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 2.8 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.1 nA Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 15V Resistance - RDS(On): 500 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	30 V	2.8 mA @ 15 V	-	2.5 V @ 0.1 nA	3pF @ 15V	500 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
SMP4416ATR	InterFET	JFET N-Channel -35V Low Ciss FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): 35 V Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Resistance - RDS(On): 180 Ohms Power - Max: 350 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote	-	35 V	8 mA @ 15 V	-	3 V @ 1 nA	3.5pF @ 15V	180 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	SOT-23-3
MX2N5115	Microchip Technology	JFET P-CH 30V TO18 FET Type: P-Channel Voltage - Breakdown (V(BR)GSS): 30 V Drain to Source Voltage (Vdss): 30 V Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V Resistance - RDS(On): 100 Ohms Power - Max: 500 mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	30 V	30 V	15 mA @ 15 V	-	6 V @ 1 nA	25pF @ 15V	100 Ohms	500 mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
2SK2539-6-TB-E	onsemi	NCH J-FET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
LS840-TO-78-6L-ROHS	Linear Integrated Systems, Inc.	JFET 2N-CH 60V TO78-6 FET Type: 2 N-Channel (Dual) Voltage - Breakdown (V(BR)GSS): 60 V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V Resistance - RDS(On): - Power - Max: 400 mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-78-6 Metal Can Supplier Device Package: TO-78-6	패키지: -	재고3,000	60 V	-	500 µA @ 20 V	-	1 V @ 1 nA	10pF @ 20V	-	400 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-78-6 Metal Can	TO-78-6
MX2N4857UB-TR	Microchip Technology	JFET FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

2SK2394-7-FRD-TB-E

ON Semiconductor

JFET N-CH SC-59-3

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,216

-

MV2N4861

Microsemi Corporation

N CHANNEL JFET

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 80mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4V @ 0.5nA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 60 Ohm
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: TO-206AA, TO-18-3 Metal Can

재고5,328

30V

80mA @ 15V

-

4V @ 0.5nA

18pF @ 10V

60 Ohm

360mW

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

2N5116UB

Microsemi Corporation

P CHANNEL JFET

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 4V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 15V
Resistance - RDS(On): 175 Ohm
Power - Max: 500mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: 3-SMD, No Lead

재고4,832

30V

25mA @ 15V

-

4V @ 1nA

27pF @ 15V

175 Ohm

500mW

-65°C ~ 200°C (TJ)

Surface Mount

3-SMD, No Lead

UB

2N5545JTXL01

Vishay Siliconix

JFET N-CH 50V TO-71

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-71-6
Supplier Device Package: TO-71

패키지: TO-71-6

재고5,280

-

Through Hole

TO-71-6

TO-71

2N5116-E3

Vishay Siliconix

JFET P-CH 30V TO-18

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고3,424

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N5114JAN02

Vishay Siliconix

JFET P-CH 30V TO-206AA

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고5,264

-

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

2N4393

Vishay Siliconix

MOSFET N-CH 40V .1NA TO-18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 100 Ohm
Power - Max: 1.8W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고14,040

40V

-

5mA @ 20V

-

500mV @ 1nA

14pF @ 20V

100 Ohm

1.8W

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-206AA (TO-18)

FJN598JCBU

Fairchild/ON Semiconductor

JFET N-CH 20V 0.15W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 20V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Resistance - RDS(On): -
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,456

20V

-

100µA @ 5V

1mA

600mV @ 1µA

3.5pF @ 5V

-

150mW

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

FJN598JBTA

Fairchild/ON Semiconductor

JFET N-CH 20V 0.15W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 20V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 100µA @ 5V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 600mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Resistance - RDS(On): -
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,888

20V

-

100µA @ 5V

1mA

600mV @ 1µA

3.5pF @ 5V

-

150mW

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N3820_D26Z

Fairchild/ON Semiconductor

JFET P-CH 20V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 20V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 300µA @ 10V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 8V @ 10µA
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,488

20V

-

300µA @ 10V

-

8V @ 10µA

32pF @ 10V

-

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

2N5461

Fairchild/ON Semiconductor

JFET P-CH 40V 0.35W TO92

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고720,600

40V

-

2mA @ 15V

-

1V @ 1µA

7pF @ 15V

-

350mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N5457G

ON Semiconductor

JFET N-CH 25V 0.31W TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Resistance - RDS(On): -
Power - Max: 310mW
Operating Temperature: 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,936

25V

1mA @ 15V

-

500mV @ 10nA

7pF @ 15V

-

310mW

135°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N4416A

Central Semiconductor Corp

JFET N-CH 35V 0.3W TO-72

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): 35V
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Resistance - RDS(On): -
Power - Max: 300mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

패키지: TO-206AF, TO-72-4 Metal Can

재고10,236

35V

5mA @ 15V

-

2.5V @ 1nA

4pF @ 15V

-

300mW

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

CPH3910-TL-E

ON Semiconductor

MOSFET N-CH 25V .04A CPH3

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25V
Drain to Source Voltage (Vdss): 25V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 5V
Current Drain (Id) - Max: 50mA
Voltage - Cutoff (VGS off) @ Id: 1.8V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 5V
Resistance - RDS(On): -
Power - Max: 400mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CPH

패키지: TO-236-3, SC-59, SOT-23-3

재고5,600

25V

20mA @ 5V

50mA

1.8V @ 100µA

6pF @ 5V

-

400mW

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CPH

CMPF4392 TR

Central Semiconductor Corp

JFET N-CH 40V 50MA SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 60 Ohm
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고22,926

40V

25mA @ 20V

-

2V @ 1nA

14pF @ 20V

60 Ohm

350mW

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

J111

Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): 30 Ohm
Power - Max: 625mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고108,480

35V

-

20mA @ 15V

-

3V @ 1µA

-

30 Ohm

625mW

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

CMPFJ310-TR

Central Semiconductor Corp

JFET N-CH 25V SOT23

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 25 V
Drain to Source Voltage (Vdss): 25 V
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Resistance - RDS(On): -
Power - Max: 350 mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: -

Request a Quote

25 V

24 mA @ 10 V

-

2 V @ 1 nA

5pF @ 10V

-

350 mW

-65°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

MQ2N4393UB

Microchip Technology

JFET N-CH UB

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB

패키지: -

Request a Quote

-

Surface Mount

3-SMD, No Lead

UB

MV2N4091

Microchip Technology

JFET N-CH 40V TO18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 30 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

40 V

30 mA @ 20 V

-

16pF @ 20V

30 Ohms

360 mW

-65°C ~ 175°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

MQ2N4091

Microchip Technology

JFET N-CH 40V TO18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40 V
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 30 mA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 30 Ohms
Power - Max: 360 mW
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

40 V

30 mA @ 20 V

-

16pF @ 20V

30 Ohms

360 mW

-65°C ~ 175°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

SMP5460

InterFET

JFET P-Channel 40V Low Ciss

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 40 V
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Resistance - RDS(On): 650 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

40 V

2 mA @ 15 V

-

2 V @ 1 µA

4pF @ 15V

650 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

SMP4338

InterFET

JFET N-Channel -50V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 50 V
Current - Drain (Idss) @ Vds (Vgs=0): 40 µA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 700 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 15V
Resistance - RDS(On): 1.2 kOhms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

50 V

40 µA @ 15 V

-

700 mV @ 100 nA

3pF @ 15V

1.2 kOhms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

SMP4221

InterFET

JFET N-Channel -30V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 2.8 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 0.1 nA
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 15V
Resistance - RDS(On): 500 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

30 V

2.8 mA @ 15 V

-

2.5 V @ 0.1 nA

3pF @ 15V

500 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

SMP4416ATR

InterFET

JFET N-Channel -35V Low Ciss

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): 35 V
Current - Drain (Idss) @ Vds (Vgs=0): 8 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V
Resistance - RDS(On): 180 Ohms
Power - Max: 350 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote

-

35 V

8 mA @ 15 V

-

3 V @ 1 nA

3.5pF @ 15V

180 Ohms

350 mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

MX2N5115

Microchip Technology

JFET P-CH 30V TO18

FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30 V
Drain to Source Voltage (Vdss): 30 V
Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 6 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
Resistance - RDS(On): 100 Ohms
Power - Max: 500 mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

30 V

15 mA @ 15 V

-

6 V @ 1 nA

25pF @ 15V

100 Ohms

500 mW

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

2SK2539-6-TB-E

onsemi

NCH J-FET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

LS840-TO-78-6L-ROHS

Linear Integrated Systems, Inc.

JFET 2N-CH 60V TO78-6

FET Type: 2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS): 60 V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 500 µA @ 20 V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 20V
Resistance - RDS(On): -
Power - Max: 400 mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6

패키지: -

재고3,000

60 V

-

500 µA @ 20 V

-

1 V @ 1 nA

10pF @ 20V

-

400 mW

-55°C ~ 150°C (TJ)

Through Hole

TO-78-6 Metal Can

TO-78-6

MX2N4857UB-TR

Microchip Technology

JFET

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: -
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