페이지 247 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
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다이오드 - 브리지 정류기

기록 7,565
페이지  247/271
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제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
KBPM308G
GeneSiC Semiconductor

DIODE BRIDGE 800V 3A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
패키지: 4-SIP, KBPM
재고6,592
Standard
800V
3A
1.1V @ 3A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
EFE13F
Crydom Co.

MODULE DIODE 75A 380VAC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 100A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고4,256
Standard
1200V
75A
1.4V @ 100A
-
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
W10G/1
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1.5A 1000V WOG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Circular, WOG
  • Supplier Device Package: WOG
패키지: 4-Circular, WOG
재고2,576
Standard
1000V
1.5A
1V @ 1A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-Circular, WOG
WOG
M3P100A-80
GeneSiC Semiconductor

DIODE STD REC 800V 100A 3PH

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 100A
  • Current - Reverse Leakage @ Vr: 10mA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-SMD Module
  • Supplier Device Package: 5-SMD
패키지: 5-SMD Module
재고2,032
Standard
800V
100A
1.15V @ 100A
10mA @ 800V
-55°C ~ 150°C (TJ)
Surface Mount
5-SMD Module
5-SMD
VUC36-12GO2
IXYS

DIODE BRIDGE FAST 1200V KAMM-MOD

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 34A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 55A
  • Current - Reverse Leakage @ Vr: 5mA @ 1200V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: KAMM
  • Supplier Device Package: KAMM
패키지: KAMM
재고4,592
Standard
1200V
34A
1.85V @ 55A
5mA @ 1200V
-40°C ~ 125°C (TJ)
Chassis Mount
KAMM
KAMM
GBPC5004-G
Comchip Technology

RECTIFIER BRIDGE 50A 400V GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
패키지: 4-Square, GBPC
재고7,152
Standard
400V
50A
1.1V @ 25A
10µA @ 400V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
TS25P04G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 25A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고2,384
Standard
400V
25A
1.1V @ 25A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS20P04G D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고7,856
Standard
400V
20A
1.1V @ 20A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
TS20P04GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고4,176
Standard
400V
20A
1.1V @ 20A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBL005-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 50V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고7,680
Standard
50V
3A
1.1V @ 4A
5µA @ 50V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
hot DB106G
GeneSiC Semiconductor

DIODE BRIDGE 800V 1A DB

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB
패키지: 4-EDIP (0.321", 8.15mm)
재고4,704
Standard
800V
1A
1.1V @ 1A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB
UG4KB40TB
SMC Diode Solutions

BRIDGE RECT 1PHASE 400V 4A D3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: D3K
패키지: 4-ESIP
재고6,560
Standard
400V
4A
1.1V @ 4A
5µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP
D3K
GBU8D-BP
Micro Commercial Co

RECT BRIDGE GPP 8A 200V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고2,784
Standard
200V
8A
1V @ 4A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
CBRLDSH1-40 TR13
Central Semiconductor Corp

RECT BRIDGE 1A 40V 4LPDIP

  • Diode Type: Single Phase
  • Technology: Schottky
  • Voltage - Peak Reverse (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: 4-LPDIP
패키지: 4-SMD, Gull Wing
재고5,664
Schottky
40V
1A
500mV @ 1A
100µA @ 40V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
4-LPDIP
DB103-BP
Micro Commercial Co

RECTIFIER BRIDGE 1A 200V DB-1

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DB-1
패키지: 4-EDIP (0.321", 8.15mm)
재고58,986
Standard
200V
1A
1.1V @ 1A
10µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DB-1
GBU8A-T
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 5.6 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
50 V
5.6 A
1 V @ 8 A
5 µA @ 50 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBU2002-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 20 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
200 V
20 A
1.1 V @ 10 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBS4K
Diotec Semiconductor

BRIDGE 1-PH GBS_SIL-1.5-2.3 800V

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 2.3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: 4-SIP
패키지: -
Request a Quote
Standard
800 V
2.3 A
1.05 V @ 2 A
5 µA @ 800 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP
4-SIP
GBS4J
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 2.3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP
  • Supplier Device Package: 4-SIL
패키지: -
Request a Quote
Standard
600 V
2.3 A
1.05 V @ 2 A
5 µA @ 600 V
-50°C ~ 150°C (TJ)
Through Hole
4-ESIP
4-SIL
KBPF306G
Taiwan Semiconductor Corporation

3A, 800V, STANDARD BRIDGE RECTIF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPF
  • Supplier Device Package: KBPF
패키지: -
재고6,300
Standard
800 V
3 A
1.1 V @ 1.5 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBPF
KBPF
GBI20M
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 3.6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBI
  • Supplier Device Package: GBI
패키지: -
Request a Quote
Standard
1 kV
3.6 A
1.1 V @ 10 A
5 µA @ 1000 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBI
GBI
RDBF34-13
Diodes Incorporated

BRIDGE RECTIFIER DBF T&R 3K

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: DBF
패키지: -
Request a Quote
Standard
400 V
3 A
1.3 V @ 2.5 A
5 µA @ 400 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Flat Leads
DBF
RDXK810_T0_00601
Panjit International Inc.

DXK,GLASS PASSIVATED FAST BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: DXK
패키지: -
재고16,758
Standard
1 kV
8 A
1.3 V @ 4 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP
DXK
GBJA2502-BP
Micro Commercial Co

DIODE BRIDGE 25A JA

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, JA
  • Supplier Device Package: JA
패키지: -
Request a Quote
Standard
200 V
25 A
1.05 V @ 12.5 A
10 µA @ 200 V
-55°C ~ 150°C
Through Hole
4-SIP, JA
JA
GBL02E-E3-A
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 200V 3A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
Request a Quote
Standard
200 V
3 A
1 V @ 4 A
5 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
KBL403G-T0
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 200V 4A KBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBL
  • Supplier Device Package: KBL
패키지: -
Request a Quote
Standard
200 V
4 A
1.1 V @ 4 A
10 µA @ 200 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, KBL
KBL
TBS406
Taiwan Semiconductor Corporation

4A 600V STANDARD BRIDGE RECTIFIE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 4 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: TBS
패키지: -
재고15,528
Standard
600 V
4 A
1 V @ 4 A
2 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
TBS
DB107L-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-EDIP (0.321", 8.15mm)
  • Supplier Device Package: DBL-1
패키지: -
Request a Quote
Standard
1 kV
1 A
1.05 V @ 1 A
10 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-EDIP (0.321", 8.15mm)
DBL-1