페이지 248 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 706
Language Translation

* Please refer to the English Version as our Official Version.

다이오드 - 브리지 정류기

기록 7,565
페이지  248/271
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
VSIB660-E3/45
Vishay Semiconductor Diodes Division

DIODE 6A 600V SGL BRIDGE 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
패키지: 4-SIP, GSIB-5S
재고5,920
Standard
600V
2.8A
950mV @ 3A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
G5SBA20-E3/45
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 6A 200V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 2.8A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고3,984
Standard
200V
2.8A
1.05V @ 3A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
BF3510TV
STMicroelectronics

DIODE BRIDGE 1000V 60KHZ ISOTOP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ISOTOP
  • Supplier Device Package: ISOTOP?
패키지: ISOTOP
재고4,704
Standard
1000V
35A
-
10µA @ 800V
150°C (TJ)
Chassis Mount
ISOTOP
ISOTOP?
MB252W-BP
Micro Commercial Co

RECT BRIDGE 25A 200V WIRE LEADS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 12.5A
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, MB-35W
  • Supplier Device Package: MB-35W
패키지: 4-Square, MB-35W
재고7,488
Standard
200V
25A
1.2V @ 12.5A
10µA @ 200V
-55°C ~ 125°C (TJ)
Through Hole
4-Square, MB-35W
MB-35W
MP508
Micro Commercial Co

RECT BRIDGE 50A 800V W/O LEADS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, MP-50
  • Supplier Device Package: MP-50
패키지: 4-Square, MP-50
재고4,192
Standard
800V
50A
1.2V @ 25A
10µA @ 800V
-50°C ~ 150°C (TJ)
QC Terminal
4-Square, MP-50
MP-50
130MT100KB
Vishay Semiconductor Diodes Division

IC BRIDGE 3PH 1000V 130A MTK

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 130A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 10mA @ 1000V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: MTK
  • Supplier Device Package: MTK
패키지: MTK
재고5,456
Standard
1000V
130A
-
10mA @ 1000V
-40°C ~ 150°C (TJ)
Chassis Mount
MTK
MTK
M2550TB600
Crydom Co.

MODULE POWER 50A 600V 3PH BRIDGE

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,752
Standard
600V
50A
-
-
-
Chassis Mount
Module
Module
hot GBPC1506W
GeneSiC Semiconductor

DIODE BRIDGE 600V 15A GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
패키지: 4-Square, GBPC-W
재고15,600
Standard
600V
15A
1.1V @ 7.5A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
BU12085S-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 12A BU-5S

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3.4A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, BU-5S
  • Supplier Device Package: isoCINK+? BU-5S
패키지: 4-SIP, BU-5S
재고7,216
Standard
800V
3.4A
1.05V @ 6A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, BU-5S
isoCINK+? BU-5S
GBLA06-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 600V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고5,568
Standard
600V
4A
1V @ 4A
5µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBU1007 D2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고4,944
Standard
1000V
10A
1.1V @ 1.5A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
B485C-2
Crydom Co.

MOD DIODE PWR 50A 240VAC ISO PNL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 50A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: B48 Module
  • Supplier Device Package: -
패키지: B48 Module
재고3,584
Standard
600V
50A
1.35V @ 50A
-
-40°C ~ 125°C (TJ)
Chassis Mount
B48 Module
-
HBS506-HF
Comchip Technology

BRIDGE RECTIFIER 600V 5A HBS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 5 A
  • Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: HBS
패키지: -
Request a Quote
Standard
600 V
5 A
970 mV @ 5 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
HBS
PB88-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, PB-10
  • Supplier Device Package: PB-10
패키지: -
Request a Quote
Standard
800 V
8 A
1.1 V @ 4 A
10 µA @ 800 V
-55°C ~ 125°C
Through Hole
4-Square, PB-10
PB-10
NTE5741
NTE Electronics, Inc

R-3 PHASE BRIDGE 1600V 30

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.6 kV
  • Current - Average Rectified (Io): 30 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
  • Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
1.6 kV
30 A
1.1 V @ 30 A
2 mA @ 1600 V
-40°C ~ 125°C (TJ)
Chassis Mount
Module
-
ABS05-HF
Comchip Technology

BRIDGE RECT 1PHASE 50V 1A ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
패키지: -
Request a Quote
Standard
50 V
1 A
1.1 V @ 1 A
5 µA @ 50 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
GBJ8G
Surge

8A -400V - GBJ - BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 8 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
100 V
8 A
1 V @ 4 A
10 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
-
-
GBL207
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 2A GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
재고3,591
Standard
1 kV
2 A
1 V @ 2 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
GBL08H
Taiwan Semiconductor Corporation

4A, 800V, STANDARD BRIDGE RECTIF

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: -
재고3,600
Standard
800 V
3 A
1 V @ 2 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
DB35-01
Diotec Semiconductor

IC

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 35 A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 17.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 5-Square, DB-35
  • Supplier Device Package: DB
패키지: -
Request a Quote
Standard
100 V
35 A
1.05 V @ 17.5 A
5 µA @ 100 V
-50°C ~ 150°C (TJ)
Chassis Mount
5-Square, DB-35
DB
GBU8JL-7000M3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3.9A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3.9 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: -
Request a Quote
Standard
600 V
3.9 A
1 V @ 8 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
DHG40B1200LB-TRR
IXYS

BIPOLAR MODULE-BRIDGE RECTIFIER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1.2 kV
  • Current - Average Rectified (Io): 34 A
  • Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-PowerSMD
  • Supplier Device Package: 9-SMPD-B
패키지: -
Request a Quote
Standard
1.2 kV
34 A
2.24 V @ 20 A
40 µA @ 1200 V
-55°C ~ 150°C (TJ)
Surface Mount
9-PowerSMD
9-SMPD-B
GBPC1010W
Surge

10A -1000V - GBPC-W - BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
Standard
1 kV
10 A
1.1 V @ 5 A
5 µA @ 1000 V
-65°C ~ 150°C (TJ)
-
-
-
RPM610_R2_00601
Panjit International Inc.

SURFACE MOUNT GLASS PASSIVATED F

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: M8
패키지: -
Request a Quote
Standard
1 kV
6 A
1.3 V @ 3 A
5 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
M8
UD2KB05-BP
Micro Commercial Co

Interface

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP
  • Supplier Device Package: D3K
패키지: -
Request a Quote
Standard
50 V
2 A
1 V @ 1 A
10 µA @ 50 V
-55°C ~ 150°C
Through Hole
4-SIP
D3K
ABS15JH
Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 1.5A ABS

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
패키지: -
재고15,000
Standard
600 V
1.5 A
1 V @ 1.5 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS
RABS15MH
Taiwan Semiconductor Corporation

BRIDGE RECT 1P 1KV 1.5A ABS-L

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1 kV
  • Current - Average Rectified (Io): 1.5 A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS-L
패키지: -
재고14,850
Standard
1 kV
1.5 A
1.3 V @ 1.5 A
1 µA @ 1000 V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
ABS-L
GBU1505
Taiwan Semiconductor Corporation

15A, 600V, STANDARD BRIDGE RECTI

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-ESIP, GBU
  • Supplier Device Package: GBU
패키지: -
재고3,000
Standard
600 V
15 A
1.1 V @ 15 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-ESIP, GBU
GBU