페이지 51 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PBPC602	Diodes Incorporated	RECT BRIDGE 4A 100V PBPC6 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -65°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, PBPC-6 Supplier Device Package: PBPC-6	패키지: 4-Square, PBPC-6	재고3,568	Standard	100V	4A	1.1V @ 3A	10µA @ 100V	-65°C ~ 125°C (TJ)	Through Hole	4-Square, PBPC-6	PBPC-6
VUC25-12GO2	IXYS	DIODE BRIDGE FAST 1200V KAMM-MOD Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 55A Current - Reverse Leakage @ Vr: 5mA @ 1200V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: KAMM Supplier Device Package: KAMM	패키지: KAMM	재고5,408	Standard	1200V	25A	2.2V @ 55A	5mA @ 1200V	-40°C ~ 125°C (TJ)	Chassis Mount	KAMM	KAMM
KBU8K	Fairchild/ON Semiconductor	IC BRIDGE RECT 8A 800V KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: 4-SIP, KBU	재고29,268	Standard	800V	8A	1V @ 8A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBU	KBU
2W005G	Fairchild/ON Semiconductor	DIODE BRIDGE GPP 2.0A 50V WOB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOB Supplier Device Package: WOB	패키지: 4-Circular, WOB	재고5,856	Standard	50V	2A	1.1V @ 2A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-Circular, WOB	WOB
130MT120KB	Vishay Semiconductor Diodes Division	IC BRIDGE 3PH 1200V 130A MTK Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 130A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 10mA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: MTK Supplier Device Package: MTK	패키지: MTK	재고6,880	Standard	1200V	130A	-	10mA @ 1200V	-40°C ~ 150°C (TJ)	Chassis Mount	MTK	MTK
VS-70MT140KPBF	Vishay Semiconductor Diodes Division	MOD IGBT 1400V 70A 3-PHASE MTP Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: MT-K Module Supplier Device Package: MT-K	패키지: MT-K Module	재고6,608	Standard	1400V	70A	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	MT-K Module	MT-K
VUE30-20NO1	IXYS	DIODE BRIDGE FAST 2000V V1-A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 2000V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 5.41V @ 12A Current - Reverse Leakage @ Vr: 750µA @ 200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: V1A-PAK Supplier Device Package: V1A-PAK	패키지: V1A-PAK	재고3,520	Standard	2000V	30A	5.41V @ 12A	750µA @ 200V	-40°C ~ 150°C (TJ)	Chassis Mount	V1A-PAK	V1A-PAK
VBO36-14NO8	IXYS	RECT BRIDGE 30A 1400V FO-B Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, FO-B Supplier Device Package: FO-B	패키지: 4-Square, FO-B	재고5,648	Standard	1400V	30A	1.7V @ 150A	300µA @ 1400V	-40°C ~ 150°C (TJ)	QC Terminal	4-Square, FO-B	FO-B
GBPC5010T	GeneSiC Semiconductor	DIODE BRIDGE 1000V 50A GBPC-T/W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: 4-Square, GBPC	재고5,984	Standard	1000V	50A	1.1V @ 25A	5µA @ 1000V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBJ2510-G-06	Comchip Technology	RECTIFIER BRIDGE 25A 1000V GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1V @ 12.5A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고2,320	Standard	1000V	25A	1V @ 12.5A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
KBPC1002W-G	Comchip Technology	RECTIFIER BRIDGE 10A 200V KBPCW Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, KBPC-W Supplier Device Package: KBPC-W	패키지: 4-Square, KBPC-W	재고6,368	Standard	200V	10A	1.1V @ 5A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, KBPC-W	KBPC-W
BU1010A-M3/51	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 1000V 10A BU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU Supplier Device Package: isoCINK+? BU	패키지: 4-SIP, BU	재고7,120	Standard	1000V	10A	1.1V @ 5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+? BU
KBL401-G	Comchip Technology	RECTIFIER BRIDGE 4A 100V KBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBL Supplier Device Package: KBL	패키지: 4-SIP, KBL	재고3,264	Standard	100V	4A	1.1V @ 4A	10µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBL	KBL
DF04SA-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 1A 400V 4SMD Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DFS	패키지: 4-SMD, Gull Wing	재고7,664	Standard	400V	1A	1.1V @ 1A	5µA @ 400V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DFS
DBLS155G RDG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1.5A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 2µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	패키지: 4-SMD, Gull Wing	재고4,608	Standard	600V	1.5A	1.1V @ 1.5A	2µA @ 600V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DBLS
CBR1-D040	Central Semiconductor Corp	RECT BRIDGE 1A 400V 4DIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	패키지: 4-DIP (0.300", 7.62mm)	재고6,144	Standard	400V	1A	1.1V @ 1A	10µA @ 400V	-65°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP
VS-GBPC3510W	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 35A 1000V GBPCW Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 2mA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고6,600	Standard	1000V	35A	-	2mA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
KBP201G	Diodes Incorporated	RECT BRIDGE GPP 100V 2A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBP Supplier Device Package: KBP	패키지: 4-SIP, KBP	재고10,428	Standard	100V	2A	1.1V @ 2A	5µA @ 100V	-65°C ~ 150°C (TJ)	Through Hole	4-SIP, KBP	KBP
TS40P05GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 40A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: -	재고1,326	Standard	600 V	40 A	1.1 V @ 20 A	10 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
DF1512S_HF	Diodes Incorporated	LOW POWER BRIDGE DF-S T&R 1.5K Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DF-S	패키지: -	Request a Quote	Standard	1.2 kV	1.5 A	1.1 V @ 1.5 A	10 µA @ 1200 V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DF-S
NTE5318	NTE Electronics, Inc	R-SI BRIDGE 200V 4A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP Supplier Device Package: 4-SIP	패키지: -	Request a Quote	Standard	200 V	4 A	1 V @ 3 A	10 µA @ 200 V	-55°C ~ 125°C (TJ)	Through Hole	4-ESIP	4-SIP
DBL158GH	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 1.2KV 1.5A DBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: -	재고15,000	Standard	1.2 kV	1.5 A	1.25 V @ 1.5 A	2 µA @ 1200 V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
GBU8KL-5301M3-45	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 800V 3.9A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.9 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	800 V	3.9 A	1 V @ 8 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBL208-BP	Micro Commercial Co	DIODE GPP SGL PHASE 2A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: -	Request a Quote	Standard	800 V	2 A	1.05 V @ 1 A	10 µA @ 800 V	-55°C ~ 150°C	Through Hole	4-SIP, GBL	GBL
GSIB1580-5402E3-45	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1P 800V 3.5A GSIB-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.5 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Supplier Device Package: GSIB-5S	패키지: -	Request a Quote	Standard	800 V	3.5 A	950 mV @ 7.5 A	10 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GSIB-5S	GSIB-5S
483-1	Microchip Technology	3 PHASE BRIDGE Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 39 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: ME Supplier Device Package: ME	패키지: -	Request a Quote	Standard	200 V	25 A	1.3 V @ 39 A	1 µA @ 200 V	-65°C ~ 175°C (TJ)	Chassis Mount	ME	ME
KBL607G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 6A KBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBL Supplier Device Package: KBL	패키지: -	재고3,000	Standard	1 kV	6 A	1.1 V @ 6 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBL	KBL
KBPC1508	Solid State Inc.	15 AMP BRIDGE RECTIFIER Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, KBPC Supplier Device Package: KBPC	패키지: -	Request a Quote	Standard	800 V	15 A	1.2 V @ 7.5 A	10 µA @ 800 V	-65°C ~ 150°C (TJ)	Chassis Mount	4-Square, KBPC	KBPC

PBPC602

Diodes Incorporated

RECT BRIDGE 4A 100V PBPC6

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -65°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, PBPC-6
Supplier Device Package: PBPC-6

패키지: 4-Square, PBPC-6

재고3,568

Standard

100V

4A

1.1V @ 3A

10µA @ 100V

-65°C ~ 125°C (TJ)

Through Hole

4-Square, PBPC-6

PBPC-6

VUC25-12GO2

IXYS

DIODE BRIDGE FAST 1200V KAMM-MOD

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 55A
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: KAMM
Supplier Device Package: KAMM

패키지: KAMM

재고5,408

Standard

1200V

25A

2.2V @ 55A

5mA @ 1200V

-40°C ~ 125°C (TJ)

Chassis Mount

KAMM

KBU8K

Fairchild/ON Semiconductor

IC BRIDGE RECT 8A 800V KBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Supplier Device Package: KBU

패키지: 4-SIP, KBU

재고29,268

Standard

800V

8A

1V @ 8A

10µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBU

KBU

2W005G

Fairchild/ON Semiconductor

DIODE BRIDGE GPP 2.0A 50V WOB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOB
Supplier Device Package: WOB

패키지: 4-Circular, WOB

재고5,856

Standard

50V

2A

1.1V @ 2A

5µA @ 50V

-55°C ~ 150°C (TJ)

Through Hole

4-Circular, WOB

WOB

130MT120KB

Vishay Semiconductor Diodes Division

IC BRIDGE 3PH 1200V 130A MTK

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 130A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: 10mA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: MTK
Supplier Device Package: MTK

패키지: MTK

재고6,880

Standard

1200V

130A

-

10mA @ 1200V

-40°C ~ 150°C (TJ)

Chassis Mount

MTK

VS-70MT140KPBF

Vishay Semiconductor Diodes Division

MOD IGBT 1400V 70A 3-PHASE MTP

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: MT-K Module
Supplier Device Package: MT-K

패키지: MT-K Module

재고6,608

Standard

1400V

70A

-

-40°C ~ 150°C (TJ)

Chassis Mount

MT-K Module

MT-K

VUE30-20NO1

IXYS

DIODE BRIDGE FAST 2000V V1-A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 2000V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 5.41V @ 12A
Current - Reverse Leakage @ Vr: 750µA @ 200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1A-PAK
Supplier Device Package: V1A-PAK

패키지: V1A-PAK

재고3,520

Standard

2000V

30A

5.41V @ 12A

750µA @ 200V

-40°C ~ 150°C (TJ)

Chassis Mount

V1A-PAK

VBO36-14NO8

IXYS

RECT BRIDGE 30A 1400V FO-B

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1400V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, FO-B
Supplier Device Package: FO-B

패키지: 4-Square, FO-B

재고5,648

Standard

1400V

30A

1.7V @ 150A

300µA @ 1400V

-40°C ~ 150°C (TJ)

QC Terminal

4-Square, FO-B

FO-B

GBPC5010T

GeneSiC Semiconductor

DIODE BRIDGE 1000V 50A GBPC-T/W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

패키지: 4-Square, GBPC

재고5,984

Standard

1000V

50A

1.1V @ 25A

5µA @ 1000V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

GBJ2510-G-06

Comchip Technology

RECTIFIER BRIDGE 25A 1000V GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1V @ 12.5A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고2,320

Standard

1000V

25A

1V @ 12.5A

10µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

KBPC1002W-G

Comchip Technology

RECTIFIER BRIDGE 10A 200V KBPCW

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, KBPC-W
Supplier Device Package: KBPC-W

패키지: 4-Square, KBPC-W

재고6,368

Standard

200V

10A

1.1V @ 5A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, KBPC-W

KBPC-W

BU1010A-M3/51

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 1000V 10A BU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

재고7,120

Standard

1000V

10A

1.1V @ 5A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU

isoCINK+? BU

KBL401-G

Comchip Technology

RECTIFIER BRIDGE 4A 100V KBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Supplier Device Package: KBL

패키지: 4-SIP, KBL

재고3,264

Standard

100V

4A

1.1V @ 4A

10µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBL

KBL

DF04SA-E3/45

Vishay Semiconductor Diodes Division

DIODE GPP 1A 400V 4SMD

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DFS

패키지: 4-SMD, Gull Wing

재고7,664

Standard

400V

1A

1.1V @ 1A

5µA @ 400V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DFS

DBLS155G RDG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Reverse Leakage @ Vr: 2µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DBLS

패키지: 4-SMD, Gull Wing

재고4,608

Standard

600V

1.5A

1.1V @ 1.5A

2µA @ 600V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DBLS

CBR1-D040

Central Semiconductor Corp

RECT BRIDGE 1A 400V 4DIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP

패키지: 4-DIP (0.300", 7.62mm)

재고6,144

Standard

400V

1A

1.1V @ 1A

10µA @ 400V

-65°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

4-DIP

VS-GBPC3510W

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 35A 1000V GBPCW

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: 2mA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고6,600

Standard

1000V

35A

-

2mA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

KBP201G

Diodes Incorporated

RECT BRIDGE GPP 100V 2A KBP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBP
Supplier Device Package: KBP

패키지: 4-SIP, KBP

재고10,428

Standard

100V

2A

1.1V @ 2A

5µA @ 100V

-65°C ~ 150°C (TJ)

Through Hole

4-SIP, KBP

KBP

TS40P05GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 600V 40A TS-6P

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: -

재고1,326

Standard

600 V

40 A

1.1 V @ 20 A

10 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

DF1512S_HF

Diodes Incorporated

LOW POWER BRIDGE DF-S T&R 1.5K

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DF-S

패키지: -

Request a Quote

Standard

1.2 kV

1.5 A

1.1 V @ 1.5 A

10 µA @ 1200 V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DF-S

NTE5318

NTE Electronics, Inc

R-SI BRIDGE 200V 4A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: 4-SIP

패키지: -

Request a Quote

Standard

200 V

4 A

1 V @ 3 A

10 µA @ 200 V

-55°C ~ 125°C (TJ)

Through Hole

4-ESIP

4-SIP

DBL158GH

Taiwan Semiconductor Corporation

BRIDGE RECT 1P 1.2KV 1.5A DBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: -

재고15,000

Standard

1.2 kV

1.5 A

1.25 V @ 1.5 A

2 µA @ 1200 V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

GBU8KL-5301M3-45

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 800V 3.9A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.9 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

Request a Quote

Standard

800 V

3.9 A

1 V @ 8 A

5 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBL208-BP

Micro Commercial Co

DIODE GPP SGL PHASE 2A GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: -

Request a Quote

Standard

800 V

2 A

1.05 V @ 1 A

10 µA @ 800 V

-55°C ~ 150°C

Through Hole

4-SIP, GBL

GBL

GSIB1580-5402E3-45

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.5 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Supplier Device Package: GSIB-5S

패키지: -

Request a Quote

Standard

800 V

3.5 A

950 mV @ 7.5 A

10 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GSIB-5S

GSIB-5S

483-1

Microchip Technology

3 PHASE BRIDGE

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 39 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ME
Supplier Device Package: ME

패키지: -

Request a Quote

Standard

200 V

25 A

1.3 V @ 39 A

1 µA @ 200 V

-65°C ~ 175°C (TJ)

Chassis Mount

ME

KBL607G

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 1KV 6A KBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Supplier Device Package: KBL

패키지: -

재고3,000

Standard

1 kV

6 A

1.1 V @ 6 A

10 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBL

KBL

KBPC1508

Solid State Inc.

15 AMP BRIDGE RECTIFIER

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 4-Square, KBPC
Supplier Device Package: KBPC

패키지: -

Request a Quote

Standard

800 V

15 A

1.2 V @ 7.5 A

10 µA @ 800 V

-65°C ~ 150°C (TJ)

Chassis Mount

4-Square, KBPC

KBPC