페이지 52 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2KBP10ML-5/22	Vishay Semiconductor Diodes Division	BRIDGE RECT 1PHASE 1KV 2A KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 165°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고7,536	Standard	1000V	2A	1.1V @ 3.14A	5µA @ 1000V	-55°C ~ 165°C (TJ)	Through Hole	4-SIP, KBPM	KBPM
MSD100-18	Microsemi Corporation	DIODE BRIDGE 1800V 100A M3 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1800V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A Current - Reverse Leakage @ Vr: 300µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: M3 Supplier Device Package: -	패키지: M3	재고4,416	Standard	1800V	100A	1.9V @ 300A	300µA @ 1800V	-40°C ~ 150°C (TJ)	Chassis Mount	M3	-
VSIB10A40-E3/45	Vishay Semiconductor Diodes Division	DIODE 10A 400V SGL BRIDGE 4SIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1V @ 5A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GSIB-5S Supplier Device Package: GSIB-5S	패키지: 4-SIP, GSIB-5S	재고2,784	Standard	400V	10A	1V @ 5A	10µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GSIB-5S	GSIB-5S
RS405L	Micro Commercial Co	RECTIFIER BRIDGE 4A 600V RS-4L Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, RS-4L Supplier Device Package: RS-4L	패키지: 4-SIP, RS-4L	재고34,800	Standard	600V	4A	1V @ 3A	10µA @ 600V	-55°C ~ 125°C (TJ)	Through Hole	4-SIP, RS-4L	RS-4L
T483A	Crydom Co.	MODULE POWER Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 25µA @ 100V Operating Temperature: - Mounting Type: Surface Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고3,424	Standard	200V	10A	-	25µA @ 100V	-	Surface Mount	Module	Module
BR50504W-G	Comchip Technology	BRIDGE DIODE 50A 400V BR-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: - Mounting Type: Through Hole Package / Case: 4-Square, BR-W Supplier Device Package: BR-W	패키지: 4-Square, BR-W	재고3,088	Standard	400V	50A	1.1V @ 25A	10µA @ 400V	-	Through Hole	4-Square, BR-W	BR-W
TS50P05GHD2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 50A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고2,032	Standard	600V	50A	1.1V @ 25A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
GBPC3508WTA	SMC Diode Solutions	BRIDGE RECT 1PH 800V 35A GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고7,888	Standard	800V	35A	1.1V @ 17.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC1502W	GeneSiC Semiconductor	DIODE BRIDGE 200V 15A GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고5,216	Standard	200V	15A	1.1V @ 7.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBU8K-M3/51	Vishay Semiconductor Diodes Division	BRIDGE RECT GPP 8A 800V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고7,456	Standard	800V	8A	1V @ 8A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBL10-M3/45	Vishay Semiconductor Diodes Division	BRIDGE RECT 4A GPP 1000V GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: 4-SIP, GBL	재고5,808	Standard	1000V	4A	1.1V @ 4A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
GBL08-E3/51	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 800V GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Current - Reverse Leakage @ Vr: 10µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: 4-SIP, GBL	재고215,520	Standard	800V	3A	1V @ 2A	10µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
RDBLS207G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, FAST, 2A, 1000 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	패키지: 4-SMD, Gull Wing	재고3,456	Standard	1000V	2A	1.15V @ 2A	2µA @ 1000V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DBLS
DBL102G C1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 2µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: 4-DIP (0.300", 7.62mm)	재고3,104	Standard	100V	1A	1.1V @ 1A	2µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
VS-KBPC602	Vishay Semiconductor Diodes Division	BRIDGE RECTIFIER 200V 6.0A D-72 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Current - Reverse Leakage @ Vr: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, D-72 Supplier Device Package: D-72	패키지: 4-Square, D-72	재고4,752	Standard	200V	6A	1.2V @ 3A	-	-40°C ~ 150°C (TJ)	Through Hole	4-Square, D-72	D-72
GBPC5004-BP	Micro Commercial Co	RECT BRIDGE 400V 50A GBPC Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: 4-Square, GBPC	재고8,088	Standard	400V	50A	1.1V @ 25A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
NTE5332	NTE Electronics, Inc	R-SI BRIDGE 600V 1A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: -	패키지: -	Request a Quote	Standard	600 V	1 A	1.2 V @ 1 A	10 µA @ 600 V	-65°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	-
MSCDC50X1201AG	Microchip Technology	PM-DIODE-SIC-SBD-SP1F Diode Type: Three Phase Technology: Silicon Carbide Schottky Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	패키지: -	재고18	Silicon Carbide Schottky	1.2 kV	50 A	1.8 V @ 50 A	200 µA @ 1200 V	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
NTE5327W	NTE Electronics, Inc	R-SI BRIDGE 800V 25A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square Supplier Device Package: -	패키지: -	Request a Quote	Standard	800 V	25 A	1.2 V @ 12.5 A	10 µA @ 800 V	-55°C ~ 125°C (TJ)	Through Hole	4-Square	-
GBU4KL-6437E3-51	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 800V 3A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	800 V	3 A	1 V @ 4 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
RS801	JATTA	BRIDGE RECT 1P 600V 8.0A RS-8 Diode Type: - Technology: - Voltage - Peak Reverse (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-
GBI20A	Diotec Semiconductor	IC Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 3.6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBI Supplier Device Package: GBI	패키지: -	Request a Quote	Standard	50 V	3.6 A	1.1 V @ 10 A	5 µA @ 50 V	-50°C ~ 150°C (TJ)	Through Hole	4-SIP, GBI	GBI
GBU4JL-5303E3-45	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 600V 3A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBJL15J	SMC Diode Solutions	600V, 15A, GBJL, BRIDGE RECTIFIE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJL Supplier Device Package: GBJL	패키지: -	재고4,302	Standard	600 V	15 A	1 V @ 7.5 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJL	GBJL
MT330CB16T3-BP	Micro Commercial Co	DISCRETE SEMICONDUCTOR MODULES T Diode Type: - Technology: - Voltage - Peak Reverse (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-
DBL202GH	Taiwan Semiconductor Corporation	DIODE BRIDGE 2A 100V DBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: -	Request a Quote	Standard	100 V	2 A	1.15 V @ 2 A	2 µA @ 100 V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
GBPC1004W	Surge	10A -400V - GBPC-W - BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	Standard	400 V	10 A	1.1 V @ 5 A	5 µA @ 400 V	-65°C ~ 150°C (TJ)	-	-	-
SM520C	JATTA	BRIDGE RECT 1P 600V 5.0A DO-214A Diode Type: - Technology: - Voltage - Peak Reverse (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-

2KBP10ML-5/22

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 1KV 2A KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고7,536

Standard

1000V

2A

1.1V @ 3.14A

5µA @ 1000V

-55°C ~ 165°C (TJ)

Through Hole

4-SIP, KBPM

KBPM

MSD100-18

Microsemi Corporation

DIODE BRIDGE 1800V 100A M3

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1800V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: -

패키지: M3

재고4,416

Standard

1800V

100A

1.9V @ 300A

300µA @ 1800V

-40°C ~ 150°C (TJ)

Chassis Mount

M3

-

VSIB10A40-E3/45

Vishay Semiconductor Diodes Division

DIODE 10A 400V SGL BRIDGE 4SIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1V @ 5A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GSIB-5S
Supplier Device Package: GSIB-5S

패키지: 4-SIP, GSIB-5S

재고2,784

Standard

400V

10A

1V @ 5A

10µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GSIB-5S

GSIB-5S

RS405L

Micro Commercial Co

RECTIFIER BRIDGE 4A 600V RS-4L

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-4L
Supplier Device Package: RS-4L

패키지: 4-SIP, RS-4L

재고34,800

Standard

600V

4A

1V @ 3A

10µA @ 600V

-55°C ~ 125°C (TJ)

Through Hole

4-SIP, RS-4L

RS-4L

T483A

Crydom Co.

MODULE POWER

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: 25µA @ 100V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고3,424

Standard

200V

10A

-

25µA @ 100V

-

Surface Mount

Module

BR50504W-G

Comchip Technology

BRIDGE DIODE 50A 400V BR-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 4-Square, BR-W
Supplier Device Package: BR-W

패키지: 4-Square, BR-W

재고3,088

Standard

400V

50A

1.1V @ 25A

10µA @ 400V

-

Through Hole

4-Square, BR-W

BR-W

TS50P05GHD2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고2,032

Standard

600V

50A

1.1V @ 25A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

GBPC3508WTA

SMC Diode Solutions

BRIDGE RECT 1PH 800V 35A GBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고7,888

Standard

800V

35A

1.1V @ 17.5A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBPC1502W

GeneSiC Semiconductor

DIODE BRIDGE 200V 15A GBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고5,216

Standard

200V

15A

1.1V @ 7.5A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

GBU8K-M3/51

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 8A 800V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고7,456

Standard

800V

8A

1V @ 8A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBL10-M3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 1000V GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: 4-SIP, GBL

재고5,808

Standard

1000V

4A

1.1V @ 4A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

GBL08-E3/51

Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 800V GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Current - Reverse Leakage @ Vr: 10µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: 4-SIP, GBL

재고215,520

Standard

800V

3A

1V @ 2A

10µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

RDBLS207G C1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, FAST, 2A, 1000

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Current - Reverse Leakage @ Vr: 2µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DBLS

패키지: 4-SMD, Gull Wing

재고3,456

Standard

1000V

2A

1.15V @ 2A

2µA @ 1000V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DBLS

DBL102G C1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 2µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: 4-DIP (0.300", 7.62mm)

재고3,104

Standard

100V

1A

1.1V @ 1A

2µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

VS-KBPC602

Vishay Semiconductor Diodes Division

BRIDGE RECTIFIER 200V 6.0A D-72

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Current - Reverse Leakage @ Vr: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, D-72
Supplier Device Package: D-72

패키지: 4-Square, D-72

재고4,752

Standard

200V

6A

1.2V @ 3A

-

-40°C ~ 150°C (TJ)

Through Hole

4-Square, D-72

D-72

GBPC5004-BP

Micro Commercial Co

RECT BRIDGE 400V 50A GBPC

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, GBPC
Supplier Device Package: GBPC

패키지: 4-Square, GBPC

재고8,088

Standard

400V

50A

1.1V @ 25A

5µA @ 400V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, GBPC

GBPC

NTE5332

NTE Electronics, Inc

R-SI BRIDGE 600V 1A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: -

패키지: -

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Standard

600 V

1 A

1.2 V @ 1 A

10 µA @ 600 V

-65°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

-

MSCDC50X1201AG

Microchip Technology

PM-DIODE-SIC-SBD-SP1F

Diode Type: Three Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

패키지: -

재고18

Silicon Carbide Schottky

1.2 kV

50 A

1.8 V @ 50 A

200 µA @ 1200 V

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

NTE5327W

NTE Electronics, Inc

R-SI BRIDGE 800V 25A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square
Supplier Device Package: -

패키지: -

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Standard

800 V

25 A

1.2 V @ 12.5 A

10 µA @ 800 V

-55°C ~ 125°C (TJ)

Through Hole

4-Square

-

GBU4KL-6437E3-51

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 800V 3A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

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Standard

800 V

3 A

1 V @ 4 A

5 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

RS801

JATTA

BRIDGE RECT 1P 600V 8.0A RS-8

Diode Type: -
Technology: -
Voltage - Peak Reverse (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

GBI20A

Diotec Semiconductor

IC

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3.6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBI
Supplier Device Package: GBI

패키지: -

Request a Quote

Standard

50 V

3.6 A

1.1 V @ 10 A

5 µA @ 50 V

-50°C ~ 150°C (TJ)

Through Hole

4-SIP, GBI

GBI

GBU4JL-5303E3-45

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

Request a Quote

Standard

600 V

3 A

1 V @ 4 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBJL15J

SMC Diode Solutions

600V, 15A, GBJL, BRIDGE RECTIFIE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJL
Supplier Device Package: GBJL

패키지: -

재고4,302

Standard

600 V

15 A

1 V @ 7.5 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJL

GBJL

MT330CB16T3-BP

Micro Commercial Co

DISCRETE SEMICONDUCTOR MODULES T

Diode Type: -
Technology: -
Voltage - Peak Reverse (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

DBL202GH

Taiwan Semiconductor Corporation

DIODE BRIDGE 2A 100V DBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: -

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Standard

100 V

2 A

1.15 V @ 2 A

2 µA @ 100 V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

GBPC1004W

Surge

10A -400V - GBPC-W - BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

Standard

400 V

10 A

1.1 V @ 5 A

5 µA @ 400 V

-65°C ~ 150°C (TJ)

-

SM520C

JATTA

BRIDGE RECT 1P 600V 5.0A DO-214A

Diode Type: -
Technology: -
Voltage - Peak Reverse (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

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