페이지 115 - IXYS 제품 | Heisener Electronics

부품 번호	제조업체	설명	패키지	재고
IXGH28N60B	IXYS	IGBT 600V 40A 150W TO247AD IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 80A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A Power - Max: 150W Switching Energy: 2mJ (off) Input Type: Standard Gate Charge: 68nC Td (on/off) @ 25°C: 15ns/175ns Test Condition: 480V, 28A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고390,000
IXGH30N60C2D1	IXYS	IGBT 600V 70A 190W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 70A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A Power - Max: 190W Switching Energy: 190µJ (off) Input Type: Standard Gate Charge: 70nC Td (on/off) @ 25°C: 13ns/70ns Test Condition: 400V, 24A, 5 Ohm, 15V Reverse Recovery Time (trr): 25ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고4,432
IXSA20N60B2D1	IXYS	IGBT 600V 35A 190W TO263 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A Power - Max: 190W Switching Energy: 380µJ (off) Input Type: Standard Gate Charge: 33nC Td (on/off) @ 25°C: 30ns/116ns Test Condition: 480V, 16A, 10 Ohm, 15V Reverse Recovery Time (trr): 30ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 AA (IXSA)	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,216
IXYH16N250CV1HV	IXYS	IGBT 2500V 35A TO247HV IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 2500V Current - Collector (Ic) (Max): 35A Current - Collector Pulsed (Icm): 126A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A Power - Max: 500W Switching Energy: 4.75mJ (on), 3.9mJ (off) Input Type: Standard Gate Charge: 97nC Td (on/off) @ 25°C: 14ns/260ns Test Condition: 1250V, 16A, 10 Ohm, 15V Reverse Recovery Time (trr): 19ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXYH)	패키지: TO-247-3	재고2,640
IXBX50N360HV	IXYS	IGBT 3600V 125A 660W TO-247PLUS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 3600V Current - Collector (Ic) (Max): 125A Current - Collector Pulsed (Icm): 420A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A Power - Max: 660W Switching Energy: - Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 46ns/205ns Test Condition: 960V, 50A, 5 Ohm, 15V Reverse Recovery Time (trr): 1.7µs Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고7,200
IXGH36N60B3C1	IXYS	IGBT 600V 75A 250W TO247 IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 75A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Power - Max: 250W Switching Energy: 390µJ (on), 800µJ (off) Input Type: Standard Gate Charge: 80nC Td (on/off) @ 25°C: 20ns/125ns Test Condition: 400V, 30A, 5 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXGH)	패키지: TO-247-3	재고6,384
IXXH80N65B4H1	IXYS	IGBT 650V 160A 625W TO247AD IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 160A Current - Collector Pulsed (Icm): 430A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Power - Max: 625W Switching Energy: 3.77mJ (on), 1.2mJ (off) Input Type: Standard Gate Charge: 120nC Td (on/off) @ 25°C: 38ns/120ns Test Condition: 400V, 80A, 3 Ohm, 15V Reverse Recovery Time (trr): 150ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXXH)	패키지: TO-247-3	재고19,872
MDI550-12A4	IXYS	MOD IGBT BUCK 1200V 670A Y3-DCB IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 670A Power - Max: 2750W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A Current - Collector Cutoff (Max): 21mA Input Capacitance (Cies) @ Vce: 26nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-DCB Supplier Device Package: Y3-DCB	패키지: Y3-DCB	재고4,656
IXFT50N30Q3	IXYS	MOSFET N-CH 300V 50A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 690W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	재고7,536
VKM60-01P1	IXYS	MOSFET 4N-CH 100V 75A ECO-PAC2 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75A Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Power - Max: 300W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	패키지: ECO-PAC2	재고3,136
MCD162-12IO1	IXYS	MOD THYRISTOR/DIODE 1200V Y4-M6 Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 190A Current - On State (It (RMS)) (Max): 300A Voltage - Gate Trigger (Vgt) (Max): 2.5V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A Current - Hold (Ih) (Max): 200mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Y4-M6	패키지: Y4-M6	재고2,800
VHFD29-12IO1	IXYS	RECT BRIDGE 1PH 1200V V1A-PAK Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1) Number of SCRs, Diodes: 2 SCRs, 4 Diodes Voltage - Off State: 1200V Current - On State (It (AV)) (Max): 28A Current - On State (It (RMS)) (Max): - Voltage - Gate Trigger (Vgt) (Max): 1V Current - Gate Trigger (Igt) (Max): 65mA Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 330A Current - Hold (Ih) (Max): 100mA Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: V1A-PAK	패키지: V1A-PAK	재고4,048
MDD200-22N1	IXYS	DIODE MODULE 2.2KV 224A Y4-M6 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io) (per Diode): 224A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 2200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: Y4-M6 Supplier Device Package: Y4-M6	패키지: Y4-M6	재고4,336
DSEC29-02AS	IXYS	DIODE ARRAY GP 200V 15A TO263 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 1.06V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 100µA @ 200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고6,256
DSA20C45PB	IXYS	DIODE ARRAY SCHOTTKY 45V TO220 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 750mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고72,000
DSP25-16AR	IXYS	DIODE ARRAY 1600V 28A ISOPLUS247 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io) (per Diode): 28A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 55A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 1600V Operating Temperature - Junction: -40°C ~ 180°C Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247?	패키지: ISOPLUS247?	재고6,480
DSEI2X121-02A	IXYS	DIODE MODULE 200V 123A SOT227B Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 123A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 1mA @ 200V Operating Temperature - Junction: - Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: SOT-227-4, miniBLOC	재고7,088
VUO98-14NO7	IXYS	RECT BRIDGE 3PH 1400V ECO-PAC2 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1400V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A Current - Reverse Leakage @ Vr: 100µA @ 1400V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC2 Supplier Device Package: ECO-PAC2	패키지: ECO-PAC2	재고3,248
VUO86-12NO7	IXYS	RECT BRIDGE 3PH 1200V ECO-PAC1 Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 86A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A Current - Reverse Leakage @ Vr: 40µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECO-PAC1 Supplier Device Package: ECO-PAC1	패키지: ECO-PAC1	재고7,904
IXDD509D1T/R	IXYS	IC GATE DRIVER 9A 6-DFN Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 23ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (4x5)	패키지: 6-VDFN Exposed Pad	재고7,200
IX4R11M6	IXYS	IC DRVR HALF BRIDGE 4A 16-MLP Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 7V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650V Rise / Fall Time (Typ): 23ns, 22ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VDFN Exposed Pad Supplier Device Package: 16-MLP (7x6)	패키지: 16-VDFN Exposed Pad	재고3,312
IXBOD1-12R	IXYS	IC DIODE MODULE BOD 1.25A 1200V Voltage - Clamping: 1200V (1.2kV) Technology: Mixed Technology Number of Circuits: 2 Number of Circuits: 2 Applications: High Voltage Mounting Type: PCB, Through Hole Package / Case: Radial Supplier Device Package: BOD	패키지: Radial	재고5,490
IXFJ26N50	IXYS	MOSFET N-CH 500V 14A TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
IXFT60N60X3HV	IXYS	MOSFET ULTRA 600V 60A TO268HV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268HV (IXFT) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	패키지: -	Request a Quote
IXFT12N50F	IXYS	MOSFET N-CH 12A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
IXYN150N60B3	IXYS	IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 250 A Current - Collector Pulsed (Icm): 750 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A Power - Max: 830 W Switching Energy: 4.2mJ (on), 2.6mJ (off) Input Type: Standard Gate Charge: 260 nC Td (on/off) @ 25°C: 27ns/167ns Test Condition: 400V, 75A, 2Ohm, 15V Reverse Recovery Time (trr): 88 ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	패키지: -	Request a Quote
MIXG120W1200PTEH	IXYS	IGBT MODULE - SIXPACK E3-PACK-PF IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
N3597ML040	IXYS	SCR 400V 7030A WP5 Voltage - Off State: 400 V Voltage - Gate Trigger (Vgt) (Max): 3 V Current - Gate Trigger (Igt) (Max): 300 mA Voltage - On State (Vtm) (Max): 1.53 V Current - On State (It (AV)) (Max): 3597 A Current - On State (It (RMS)) (Max): 7030 A Current - Hold (Ih) (Max): 1 A Current - Off State (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz SCR Type: Standard Recovery Operating Temperature: -40°C ~ 140°C Mounting Type: Clamp On Package / Case: TO-200AC, K-PUK Supplier Device Package: WP5	패키지: -	Request a Quote

IXGH28N60B

IXYS

IGBT 600V 40A 150W TO247AD

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
Power - Max: 150W
Switching Energy: 2mJ (off)
Input Type: Standard
Gate Charge: 68nC
Td (on/off) @ 25°C: 15ns/175ns
Test Condition: 480V, 28A, 10 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고390,000

IXGH30N60C2D1

IXYS

IGBT 600V 70A 190W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Power - Max: 190W
Switching Energy: 190µJ (off)
Input Type: Standard
Gate Charge: 70nC
Td (on/off) @ 25°C: 13ns/70ns
Test Condition: 400V, 24A, 5 Ohm, 15V
Reverse Recovery Time (trr): 25ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고4,432

IXSA20N60B2D1

IXYS

IGBT 600V 35A 190W TO263

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 35A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Power - Max: 190W
Switching Energy: 380µJ (off)
Input Type: Standard
Gate Charge: 33nC
Td (on/off) @ 25°C: 30ns/116ns
Test Condition: 480V, 16A, 10 Ohm, 15V
Reverse Recovery Time (trr): 30ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 AA (IXSA)

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,216

IXYH16N250CV1HV

IXYS

IGBT 2500V 35A TO247HV

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 2500V
Current - Collector (Ic) (Max): 35A
Current - Collector Pulsed (Icm): 126A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Power - Max: 500W
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Input Type: Standard
Gate Charge: 97nC
Td (on/off) @ 25°C: 14ns/260ns
Test Condition: 1250V, 16A, 10 Ohm, 15V
Reverse Recovery Time (trr): 19ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXYH)

패키지: TO-247-3

재고2,640

IXBX50N360HV

IXYS

IGBT 3600V 125A 660W TO-247PLUS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 3600V
Current - Collector (Ic) (Max): 125A
Current - Collector Pulsed (Icm): 420A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
Power - Max: 660W
Switching Energy: -
Input Type: Standard
Gate Charge: 210nC
Td (on/off) @ 25°C: 46ns/205ns
Test Condition: 960V, 50A, 5 Ohm, 15V
Reverse Recovery Time (trr): 1.7µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고7,200

IXGH36N60B3C1

IXYS

IGBT 600V 75A 250W TO247

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Power - Max: 250W
Switching Energy: 390µJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: 80nC
Td (on/off) @ 25°C: 20ns/125ns
Test Condition: 400V, 30A, 5 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXGH)

패키지: TO-247-3

재고6,384

IXXH80N65B4H1

IXYS

IGBT 650V 160A 625W TO247AD

IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): 430A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Power - Max: 625W
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 38ns/120ns
Test Condition: 400V, 80A, 3 Ohm, 15V
Reverse Recovery Time (trr): 150ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXXH)

패키지: TO-247-3

재고19,872

MDI550-12A4

IXYS

MOD IGBT BUCK 1200V 670A Y3-DCB

IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 670A
Power - Max: 2750W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
Current - Collector Cutoff (Max): 21mA
Input Capacitance (Cies) @ Vce: 26nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Supplier Device Package: Y3-DCB

패키지: Y3-DCB

재고4,656

IXFT50N30Q3

IXYS

MOSFET N-CH 300V 50A TO-268

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 690W (Tc)
Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

재고7,536

VKM60-01P1

IXYS

MOSFET 4N-CH 100V 75A ECO-PAC2

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 75A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Power - Max: 300W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

패키지: ECO-PAC2

재고3,136

MCD162-12IO1

IXYS

MOD THYRISTOR/DIODE 1200V Y4-M6

Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 190A
Current - On State (It (RMS)) (Max): 300A
Voltage - Gate Trigger (Vgt) (Max): 2.5V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Current - Hold (Ih) (Max): 200mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6

패키지: Y4-M6

재고2,800

VHFD29-12IO1

IXYS

RECT BRIDGE 1PH 1200V V1A-PAK

Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
Number of SCRs, Diodes: 2 SCRs, 4 Diodes
Voltage - Off State: 1200V
Current - On State (It (AV)) (Max): 28A
Current - On State (It (RMS)) (Max): -
Voltage - Gate Trigger (Vgt) (Max): 1V
Current - Gate Trigger (Igt) (Max): 65mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 330A
Current - Hold (Ih) (Max): 100mA
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: V1A-PAK

패키지: V1A-PAK

재고4,048

MDD200-22N1

IXYS

DIODE MODULE 2.2KV 224A Y4-M6

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io) (per Diode): 224A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20mA @ 2200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Supplier Device Package: Y4-M6

패키지: Y4-M6

재고4,336

DSEC29-02AS

IXYS

DIODE ARRAY GP 200V 15A TO263

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 1.06V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고6,256

DSA20C45PB

IXYS

DIODE ARRAY SCHOTTKY 45V TO220

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 45V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고72,000

DSP25-16AR

IXYS

DIODE ARRAY 1600V 28A ISOPLUS247

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 28A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 55A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 1600V
Operating Temperature - Junction: -40°C ~ 180°C
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?

패키지: ISOPLUS247?

재고6,480

DSEI2X121-02A

IXYS

DIODE MODULE 200V 123A SOT227B

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 123A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 1mA @ 200V
Operating Temperature - Junction: -
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: SOT-227-4, miniBLOC

재고7,088

VUO98-14NO7

IXYS

RECT BRIDGE 3PH 1400V ECO-PAC2

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1400V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 40A
Current - Reverse Leakage @ Vr: 100µA @ 1400V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC2
Supplier Device Package: ECO-PAC2

패키지: ECO-PAC2

재고3,248

VUO86-12NO7

IXYS

RECT BRIDGE 3PH 1200V ECO-PAC1

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 86A
Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
Current - Reverse Leakage @ Vr: 40µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ECO-PAC1
Supplier Device Package: ECO-PAC1

패키지: ECO-PAC1

재고7,904

IXDD509D1T/R

IXYS

IC GATE DRIVER 9A 6-DFN

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 30 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 9A, 9A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 23ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-DFN (4x5)

패키지: 6-VDFN Exposed Pad

재고7,200

IX4R11M6

IXYS

IC DRVR HALF BRIDGE 4A 16-MLP

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 6V, 7V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650V
Rise / Fall Time (Typ): 23ns, 22ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VDFN Exposed Pad
Supplier Device Package: 16-MLP (7x6)

패키지: 16-VDFN Exposed Pad

재고3,312

IXBOD1-12R

IXYS

IC DIODE MODULE BOD 1.25A 1200V

Voltage - Clamping: 1200V (1.2kV)
Technology: Mixed Technology
Number of Circuits: 2
Number of Circuits: 2
Applications: High Voltage
Mounting Type: PCB, Through Hole
Package / Case: Radial
Supplier Device Package: BOD

패키지: Radial

재고5,490

IXFJ26N50

IXYS

MOSFET N-CH 500V 14A TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

IXFT60N60X3HV

IXYS

MOSFET ULTRA 600V 60A TO268HV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268HV (IXFT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

패키지: -

Request a Quote

IXFT12N50F

IXYS

MOSFET N-CH 12A TO268

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

Request a Quote

IXYN150N60B3

IXYS

IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 250 A
Current - Collector Pulsed (Icm): 750 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Power - Max: 830 W
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Input Type: Standard
Gate Charge: 260 nC
Td (on/off) @ 25°C: 27ns/167ns
Test Condition: 400V, 75A, 2Ohm, 15V
Reverse Recovery Time (trr): 88 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B

패키지: -

Request a Quote

MIXG120W1200PTEH

IXYS

IGBT MODULE - SIXPACK E3-PACK-PF

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

N3597ML040

IXYS

SCR 400V 7030A WP5

Voltage - Off State: 400 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - Gate Trigger (Igt) (Max): 300 mA
Voltage - On State (Vtm) (Max): 1.53 V
Current - On State (It (AV)) (Max): 3597 A
Current - On State (It (RMS)) (Max): 7030 A
Current - Hold (Ih) (Max): 1 A
Current - Off State (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Mounting Type: Clamp On
Package / Case: TO-200AC, K-PUK
Supplier Device Package: WP5

패키지: -

Request a Quote