페이지 118 - IXYS 제품 | Heisener Electronics
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IXYS 제품

기록 5,468
페이지  118/196
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IXGT6N170
IXYS

IGBT 1700V 12A 75W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
  • Power - Max: 75W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 20nC
  • Td (on/off) @ 25°C: 40ns/250ns
  • Test Condition: 1360V, 6A, 33 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고3,904
IXSN52N60AU1
IXYS

IGBT FRD 600V 80A SCSOA SOT227B

  • IGBT Type: PT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 250W
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
  • Current - Collector Cutoff (Max): 750µA
  • Input Capacitance (Cies) @ Vce: 4.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
패키지: SOT-227-4, miniBLOC
재고5,520
VMO150-01P1
IXYS

MOSFET N-CH 100V 165A ECO-PAC2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 165A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ECO-PAC2
  • Package / Case: ECO-PAC2
패키지: ECO-PAC2
재고4,944
IXFX44N80Q3
IXYS

MOSFET N-CH 800V 44A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고4,864
IXTQ30N60L2
IXYS

MOSFET N-CH 600V 30A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고3,568
IXFT26N50
IXYS

MOSFET N-CH 500V 26A TO-268

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
패키지: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
재고2,656
IXFT88N28P
IXYS

MOSFET N-CH 280V 88A TO268

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고7,248
IXTQ480P2
IXYS

MOSFET N-CH 500V 52A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고5,760
IXTA5N60P
IXYS

MOSFET N-CH 600V 5A D2-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,008
IXFA4N60P3
IXYS

MOSFET N-CH 600V 4A TO-263AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXFA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,456
IXTY2N60P
IXYS

MOSFET N-CH 600V 2A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,360
GMM3X160-0055X2-SMDSAM
IXYS

MOSFET 6N-CH 55V 150A 24-SMD

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SMD, Gull Wing
  • Supplier Device Package: 24-SMD
패키지: 24-SMD, Gull Wing
재고3,424
MDC500-22IO1
IXYS

DIODE MODULE 2200V WC-500

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 2200V
  • Current - On State (It (AV)) (Max): 545A
  • Current - On State (It (RMS)) (Max): 1294A
  • Voltage - Gate Trigger (Vgt) (Max): 3V
  • Current - Gate Trigger (Igt) (Max): 300mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
  • Current - Hold (Ih) (Max): 1A
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: WC-500
패키지: WC-500
재고6,976
MCC224-24IO1
IXYS

MOD THYRISTOR DUAL 24KV

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 2400V
  • Current - On State (It (AV)) (Max): 240A
  • Current - On State (It (RMS)) (Max): 400A
  • Voltage - Gate Trigger (Vgt) (Max): 2V
  • Current - Gate Trigger (Igt) (Max): 150mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A, 8500A
  • Current - Hold (Ih) (Max): 150mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
패키지: Module
재고3,344
VWO95-08IO7
IXYS

MODULE AC CTLR 3PH 800V PWS-F

  • Structure: 3-Phase Controller - All SCRs
  • Number of SCRs, Diodes: 6 SCRs
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 44A
  • Current - On State (It (RMS)) (Max): 69A
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
  • Current - Hold (Ih) (Max): 150mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
패키지: Module
재고2,320
DHG20I600HA
IXYS

DIODE GEN PURP 600V 20A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 2.24V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-247 (HA)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-3P-3 Full Pack
재고7,104
hot MEO450-12DA
IXYS

DIODE MODULE 1.2KV 453A Y4-M6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 453A
  • Voltage - Forward (Vf) (Max) @ If: 1.96V @ 520A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 24mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M6
  • Supplier Device Package: Y4-M6
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: Y4-M6
재고4,800
IXK611P1
IXYS

IC DRIVER HALF BRIDGE GATE 8DIP

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고2,400
LGB8207ATH
IXYS

D2PAK, IGBT3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
IXFH60N65X2-4
IXYS

MOSFET N-CH 650V 60A TO247-4L

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 780W (Tc)
  • Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
패키지: -
재고9
N2825TJ450
IXYS

SCR 4.5KV 5520A W81

  • Voltage - Off State: 4.5 kV
  • Voltage - Gate Trigger (Vgt) (Max): 3 V
  • Current - Gate Trigger (Igt) (Max): 300 mA
  • Voltage - On State (Vtm) (Max): 3.37 V
  • Current - On State (It (AV)) (Max): 2825 A
  • Current - On State (It (RMS)) (Max): 5520 A
  • Current - Hold (Ih) (Max): 1 A
  • Current - Off State (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: W81
패키지: -
Request a Quote
DPG30P400PJ
IXYS

DIODE GP 400V 30A ISOPLUS220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 46pF @ 200V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS220™
  • Supplier Device Package: ISOPLUS220™
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
Request a Quote
IXA20I1200PZ-TRL
IXYS

DISC IGBT XPT-GENX3 TO-263D2

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 38 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 165 W
  • Switching Energy: 1.6mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 47 nC
  • Td (on/off) @ 25°C: 48ns/230ns
  • Test Condition: 600V, 15A, 56Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
패키지: -
Request a Quote
IXYX110N120B4
IXYS

IGBT 1200V 110A GEN4 XPT PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 340 A
  • Current - Collector Pulsed (Icm): 800 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
  • Power - Max: 1360 W
  • Switching Energy: 3.6mJ (on), 3.85mJ (off)
  • Input Type: Standard
  • Gate Charge: 340 nC
  • Td (on/off) @ 25°C: 45ns/390ns
  • Test Condition: 600V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 50 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
패키지: -
Request a Quote
QJ8030RH4TP
IXYS

TRIAC ALTERNISTOR 800V 30A TO220

  • Triac Type: Alternistor - Snubberless
  • Voltage - Off State: 800 V
  • Current - On State (It (RMS)) (Max): 30 A
  • Voltage - Gate Trigger (Vgt) (Max): 1 V
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
  • Current - Gate Trigger (Igt) (Max): 35 mA
  • Current - Hold (Ih) (Max): 60 mA
  • Configuration: Single
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
패키지: -
재고2,970
IXTH24N65X2
IXYS

MOSFET N-CH 650V 24A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
패키지: -
재고780
DSEI36-06AS-TRL
IXYS

DIODE GEN PURP 600V 37A TO263AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 37A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AA
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
재고3,927
DSA30C200PC-TUB
IXYS

DIODE ARR SCHOTT 200V 15A TO263

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 940 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
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