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Infineon Technologies 제품

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BSM300GA170DN2HOSA1
Infineon Technologies

MODULE IGBT 1700V

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 440A
  • Power - Max: 2500W
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
  • Current - Collector Cutoff (Max): 3mA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,520
SPD30N03S2L10GBTMA1
Infineon Technologies

MOSFET N-CH 30V 30A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 41.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,792
SPD07N60C3T
Infineon Technologies

MOSFET N-CH 650V 7.3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,448
hot IRFZ24NSTRR
Infineon Technologies

MOSFET N-CH 55V 17A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고133,392
IPB015N08N5ATMA1
Infineon Technologies

MOSFET N-CH 80V 120A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 279µA
  • Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
패키지: TO-263-7, D2Pak (6 Leads + Tab)
재고5,360
hot IRF8308MTRPBF
Infineon Technologies

MOSFET N-CH 30V 27A MX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4404pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 27A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
패키지: DirectFET? Isometric MX
재고99,612
BG3123RH6327XTSA1
Infineon Technologies

MOSFET N-CH DUAL 8V 25MA SOT363

  • Transistor Type: 2 N-Channel (Dual)
  • Frequency: 800MHz
  • Gain: 25dB
  • Voltage - Test: 5V
  • Current Rating: 25mA, 20mA
  • Noise Figure: 1.8dB
  • Current - Test: 14mA
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고7,600
BFR 183 E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고24,168
BB831E7904HTSA1
Infineon Technologies

DIODE VAR CAP 30V 20MA SOD-323

  • Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
  • Capacitance Ratio: 9.5
  • Capacitance Ratio Condition: C1/C28
  • Voltage - Peak Reverse (Max): 30V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: PG-SOD323-2
패키지: SC-76, SOD-323
재고3,824
BTF500601TEAAUMA1
Infineon Technologies

IC PWR SW HI-SIDE 1CH TO252-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: On/Off
  • Voltage - Load: 6 V ~ 19 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 16.5A
  • Rds On (Typ): 6.8 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Supplier Device Package: PG-TO252-5-3
패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD
재고6,608
TDA4863XKLA1
Infineon Technologies

IC PFC CONTROLLER DCM 8DIP

  • Mode: Discontinuous Conduction (DCM)
  • Frequency - Switching: -
  • Current - Startup: 20µA
  • Voltage - Supply: 12.5 V ~ 20 V
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: PG-DIP-8
패키지: 8-DIP (0.300", 7.62mm)
재고3,072
hot IR2161STRPBF
Infineon Technologies

IC HALOGEN CONVERTER CTLR 8-SOIC

  • Type: Halogen Controller
  • Frequency: 34kHz ~ 70kHz
  • Voltage - Supply: 11.5 V ~ 16.5 V
  • Current - Supply: 10mA
  • Current - Output Source/Sink: -
  • Dimming: Yes
  • Operating Temperature: -25°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고16,884
IRS2124SPBF
Infineon Technologies

IC DVR HIGH SIDE 600V 8SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 80ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,272
ADM6996FHX-AC-T-1
Infineon Technologies

IC ETHERNET SW CTRLR 128QFP

  • Protocol: Ethernet
  • Function: Switch
  • Interface: Parallel
  • Standards: 10/100 Base-T/TX PHY
  • Voltage - Supply: 2.8 V ~ 3.465 V
  • Current - Supply: -
  • Operating Temperature: 0°C ~ 115°C
  • Package / Case: 128-BFQFP
  • Supplier Device Package: PG-BFQFP-128
패키지: 128-BFQFP
재고2,656
XC2387A56F80LAAKFUMA1
Infineon Technologies

IC MCU 32BIT 448KB FLASH 144LQFP

  • Core Processor: C166SV2
  • Core Size: 16/32-Bit
  • Speed: 80MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 118
  • Program Memory Size: 448KB (448K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 64K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 24x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,016
TLE9835QX
Infineon Technologies

IC MOTOR DRIVER 48VQFN

  • Applications: Automotive
  • Core Processor: XC800
  • Program Memory Type: FLASH (64 kB)
  • Controller Series: -
  • RAM Size: 3.25K x 8
  • Interface: LIN, SSI, UART
  • Number of I/O: 11
  • Voltage - Supply: 3 V ~ 27 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-29
패키지: 48-VFQFN Exposed Pad
재고2,688
ESD204B102ELSE6327XTSA1
Infineon Technologies

TVS DIODE 14VWM 28VC TSSLP2-3

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 14V (Max)
  • Voltage - Breakdown (Min): 8.5V
  • Voltage - Clamping (Max) @ Ipp: 28V
  • Current - Peak Pulse (10/1000µs): 1A (8/20µs)
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 4pF @ 1MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 2-XFDFN
  • Supplier Device Package: TSSLP-2-3
패키지: 2-XFDFN
재고3,654
CYAT81655-100AS48
Infineon Technologies

PSOC BASED - TRUETOUCH

  • Touchscreen: 2 Wire Capacitive
  • Resolution (Bits): -
  • Interface: I2C, SPI
  • Voltage Reference: -
  • Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
  • Current - Supply: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: -
Request a Quote
PSB2161TV1-1
Infineon Technologies

ARCOFI-SP AUDIO RINGING CODEC

  • Type: Audio
  • Data Interface: Serial
  • Resolution (Bits): -
  • Number of ADCs / DACs: 1 / 1
  • Sigma Delta: No
  • S/N Ratio, ADCs / DACs (db) Typ: -
  • Dynamic Range, ADCs / DACs (db) Typ: -
  • Voltage - Supply, Analog: 4.75V ~ 5.25V
  • Voltage - Supply, Digital: 4.75V ~ 5.25V
  • Operating Temperature: -25°C ~ 80°C
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: P-DSO-28
패키지: -
Request a Quote
PEB2080NVB1
Infineon Technologies

S-BUS INTERFACE CIRCUIT

  • Function: S / T Bus Interface Transceiver
  • Interface: S-Bus
  • Number of Circuits: 1
  • Voltage - Supply: 4.75V ~ 5.25V
  • Current - Supply: 13mA
  • Power (Watts): 1 W
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 28-LCC (J-Lead)
  • Supplier Device Package: PG-LCC-28-R
패키지: -
Request a Quote
S25HL02GTDPBHM053
Infineon Technologies

IC FLASH 2GBIT SPI/QUAD 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-FBGA (8x8)
패키지: -
Request a Quote
PEF2047HV1-2
Infineon Technologies

MTSS (MEMORY TIME SWITCH LARGE)

  • Type: -
  • PLL: -
  • Input: -
  • Output: -
  • Number of Circuits: -
  • Ratio - Input:Output: -
  • Differential - Input:Output: -
  • Frequency - Max: -
  • Divider/Multiplier: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
7GA6Y0090M0
Infineon Technologies

IC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
SABC501G1E24N
Infineon Technologies

LEGACY 8-BIT MCU

  • Core Processor: 8051
  • Core Size: 8-Bit
  • Speed: 24MHz
  • Connectivity: UART/USART
  • Peripherals: POR
  • Number of I/O: 32
  • Program Memory Size: 8KB (8K x 8)
  • Program Memory Type: OTP
  • EEPROM Size: -
  • RAM Size: 256 x 8
  • Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
  • Data Converters: -
  • Oscillator Type: External, Internal
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead)
  • Supplier Device Package: P-LCC-44
패키지: -
Request a Quote
F3L75R12W1H3B27BOMA1
Infineon Technologies

IGBT MOD 1200V 45A 275W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 45 A
  • Power - Max: 275 W
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고72
IRSM001-100LHTR
Infineon Technologies

IRSM001 - MULTICHIP MODULE

  • Output Configuration: -
  • Applications: -
  • Interface: -
  • Load Type: -
  • Technology: -
  • Rds On (Typ): -
  • Current - Output / Channel: -
  • Current - Peak Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Features: -
  • Fault Protection: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
BUZ22E3045A
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
BTG70501EPLXUMA1
Infineon Technologies

PROFET

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: -
  • Voltage - Load: 2.7V ~ 28V
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 28V
  • Current - Output (Max): 3A
  • Rds On (Typ): 50mOhm
  • Input Type: Non-Inverting
  • Features: Slew Rate Controlled
  • Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TSDSO-14
패키지: -
재고8,892