Infineon Technologies 제품

IRGR4045DTRRPBF

Infineon Technologies

IGBT 600V 12A 77W DPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 19.5nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRGB4045DPBF

Infineon Technologies

IGBT 600V 12A 77W TO220AB

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 13nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

IKW40T120

Infineon Technologies

IGBT 1200V 75A 270W TO247-3

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 105A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 270W
• Switching Energy: 6.5mJ
• Input Type: Standard
• Gate Charge: 203nC
• Td (on/off) @ 25°C: 48ns/480ns
• Test Condition: 600V, 40A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 240ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

BSP297L6327HTSA1

Infineon Technologies

MOSFET N-CH 200V 660MA SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 400µA
• Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 357pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

IRL3705NL

Infineon Technologies

MOSFET N-CH 55V 89A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

IPB50R250CPATMA1

Infineon Technologies

MOSFET N-CH 550V 13A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 550V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 520µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS3306TRLPBF

Infineon Technologies

MOSFET N-CH 60V 120A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BB68902VH7908XTSA1

Infineon Technologies

DIODE TUNING 30V 20MA SC79

• Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
• Capacitance Ratio: 23.2
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: PG-SC79-2

패키지: SC-79, SOD-523

IDH08S60CAKSA1

Infineon Technologies

DIODE SCHOTTKY 600V 8A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: 310pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

BAV99SH6433XTMA1

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT363

• Diode Configuration: 2 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 150nA @ 70V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

IRU3011CWTR

Infineon Technologies

IC CTRL SYNC BUCK 5BIT 20SOIC(W)

• Applications: Controller, Intel Pentium? III
• Voltage - Input: 5V, 12V
• Number of Outputs: 1
• Voltage - Output: 1.3 V ~ 3.5 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SOIC

패키지: 20-SOIC (0.295", 7.50mm Width)

TLE7826GXUMA1

Infineon Technologies

IC LDO VREG/LIN TXRX DSO-28

• Applications: Special Purpose
• Current - Supply: -
• Voltage - Supply: 3.9 V ~ 27 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-28

패키지: 28-SOIC (0.295", 7.50mm Width)

PMB2313T-V15TR

Infineon Technologies

IC PRESCALER 1.1GHZ 8DSO

• Function: Prescaler
• Frequency: 1.1GHz
• RF Type: GSM
• Secondary Attributes: -
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

CY9AFB44MABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 288KB FLASH 96FBGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
• Peripherals: DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 66
• Program Memory Size: 288KB (288K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 17x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 96-LFBGA
• Supplier Device Package: 96-FBGA (6x6)

패키지: -

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BFR181E6327HTSA1

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT23-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
• Gain: 18.5dB
• Power - Max: 175mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
• Current - Collector (Ic) (Max): 20mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23

패키지: -

TLE42344GHTMA1

Infineon Technologies

IC REG LINEAR 5V 100MA SOT223-4

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 100mA
• Current - Output: 100mA
• Current - Quiescent (Iq): 400 µA
• Current - Supply (Max): 15 mA
• PSRR: 54dB (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

패키지: -

DD340N18SHPSA1

Infineon Technologies

DIODE MOD GP 1800V BGPB50SB

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io) (per Diode): 330A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
• Operating Temperature - Junction: -40°C ~ 135°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: BG-PB50SB-1

패키지: -

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S25HS02GTDPBHV050

Infineon Technologies

IC FLASH 2GBIT SPI/QUAD 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 2Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 6 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-FBGA (8x8)

패키지: -

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CY15V104QN50BFXIXQLA1

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 4Mbit
• Memory Interface: SPI
• Clock Frequency: 50 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFLGA
• Supplier Device Package: 8-UFLGA (3.28x3.23)

패키지: -

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IPSA70R750P7SAKMA1

Infineon Technologies

MOSFET N-CH 700V 6.5A TO251-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 70µA
• Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
• Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 34.7W (Tc)
• Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: -

2ED2388S06FXUMA1

Infineon Technologies

LEVEL SHIFT SOI

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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BSM100GD60DLCBDLA1

Infineon Technologies

IGBT MOD 600V 130A 430W

• IGBT Type: -
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 130 A
• Power - Max: 430 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

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CY8C4148AZI-S585

Infineon Technologies

IC MCU 32BIT 256KB FLASH 48LQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 54
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-TQFP (7x7)

패키지: -

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ETT540N22P60HPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 542 A
• Current - On State (It (RMS)) (Max): 700 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 135°C (TC)
• Mounting Type: Chassis Mount
• Package / Case: Module

패키지: -

FF1400R12IP4PB60BPSA1

Infineon Technologies

PP IHM I

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 1400 A
• Power - Max: 7650 W
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1.4kA
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 82000 pF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

패키지: -

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CYAT81650-100AA48T

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

패키지: -

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MB4243PFV-GT-BNDE1

Infineon Technologies

IC POWER MANAGEMENT 48LQFP

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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CY9BF002BGL-G-102-K7ERE1

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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