Infineon Technologies 제품

AUIRL1404S

Infineon Technologies

MOSFET N-CH 40V 160A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-PAK (TO-252AA)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF8707PBF

Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 11.9 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

BSP135 E6906

Infineon Technologies

MOSFET N-CH 600V 120MA SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 1V @ 94µA
• Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

BC 817-40 E6433

Infineon Technologies

TRANS NPN 45V 0.5A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 170MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

BFS483H6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 65MA SOT363

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
• Gain: 19dB
• Power - Max: 450mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (Ic) (Max): 65mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

BBY 51 E6433

Infineon Technologies

DIODE TUNING 7V 20MA SOT-23

• Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
• Capacitance Ratio: 2.2
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 7V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

SIDC14D60E6

Infineon Technologies

DIODE GEN PURP 600V 30A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

TLE4299GV33NT

Infineon Technologies

IC REG LINEAR 150MA 8DSO

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

ICE2PCS01GXUMA1

Infineon Technologies

IC PFC CONTROLLER CCM 8DSO

• Mode: Continuous Conduction (CCM)
• Frequency - Switching: 50kHz ~ 315kHz
• Current - Startup: 450µA
• Voltage - Supply: 11 V ~ 25 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

TLE82094SACUMA1

Infineon Technologies

IC MOTOR DRIVER SPI 20DSO

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: SPI
• Technology: Power MOSFET
• Step Resolution: -
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 4.4 V ~ 5.25 V
• Voltage - Load: 4.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-20-65

패키지: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

IR21771SPBF

Infineon Technologies

IC CURRENT SENSE 16SOIC

• Function: Current Sense
• Sensing Method: -
• Accuracy: -
• Voltage - Input: 8 V ~ 20 V
• Current - Output: -
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

TLE8251VSJXUMA1

Infineon Technologies

TRANSCEIVER

• Type: Transceiver
• Protocol: CAN
• Number of Drivers/Receivers: 1/1
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: 2Mbps
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

XC2336B40F80LAAFXUMA1

Infineon Technologies

IC MCU 32BIT 320KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 320KB (320K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

SAK-XE164KM-72F80L AA

Infineon Technologies

IC MCU 16BIT 576KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 76
• Program Memory Size: 576KB (576K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 50K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

패키지: 100-LQFP Exposed Pad

SLE 66C321PE MFC5.8

Infineon Technologies

IC SECURITY CTRLR 8/16BIT MFC5.8

• Applications: Security
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: MFC5.8 Chip Card Module
• Supplier Device Package: S-MFC5.8-9

패키지: MFC5.8 Chip Card Module

TLE4699GMXUMA2

Infineon Technologies

IC REG LINEAR 5V 200MA 14DSO

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.35V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 100µA
• Current - Supply (Max): 10mA
• PSRR: 65dB (100Hz)
• Control Features: Enable, Reset
• Protection Features: Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

패키지: 14-SOIC (0.154", 3.90mm Width)

IR3888BMTRPBFAUMA1

Infineon Technologies

IC REG BUCK ADJ 25A 22IQFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2V
• Voltage - Input (Max): 17V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 6V
• Current - Output: 25A
• Frequency - Switching: 600kHz ~ 2MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 22-PowerVQFN
• Supplier Device Package: PG-IQFN-22-2

패키지: -

BSO080P03SHXUMA1

Infineon Technologies

MOSFET P-CH 30V 12.6A 8DSO

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 1.79W (Ta)
• Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: -

S29GL512N10FFAR23

Infineon Technologies

IC FLASH 512MBIT PARALLEL 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100 ns
• Voltage - Supply: 3V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (13x11)

패키지: -

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CYB06447BZI-BLD53

Infineon Technologies

IC MCU 32BIT 1MB FLASH 116BGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 78
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 288K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 116-WFBGA
• Supplier Device Package: 116-BGA (5.2x6.4)

패키지: -

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CYPD3173P-24LQXQ

Infineon Technologies

CCG3PA-NFET

• Applications: Power Adaptor
• Core Processor: ARM® Cortex®-M0
• Program Memory Type: FLASH (64kB)
• Controller Series: CYPD3x
• RAM Size: 4K x 8
• Interface: PWM
• Number of I/O: 6
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 24-UFQFN Exposed Pad
• Supplier Device Package: 24-QFN (4x4)

패키지: -

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S6E2HG6F0AGV2000M

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit
• Speed: 160MHz
• Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 80
• Program Memory Size: 544KB (544K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 24x12b SAR; D/A 2x12b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

패키지: -

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S29AL016J70TFI020A

Infineon Technologies

IC MEMORY FLASH NOR

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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SIDC14D60E6X1SA4

Infineon Technologies

DIODE GEN PURP 600V 30A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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S29GL064S90FHI020

Infineon Technologies

IC FLASH 64MBIT PARALLEL 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 90 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (13x11)

패키지: -

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T2180N12TOFVTXPSA1

Infineon Technologies

SCR MODULE 1800V 4460A DO200AD

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 2180 A
• Current - On State (It (RMS)) (Max): 4460 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: DO-200AD

패키지: -

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S99HS512TGABHI013

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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BSC010NE2LSIATMA1

Infineon Technologies

MOSFET N-CH 25V 38A/100A TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25 V
• Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 12 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-7
• Package / Case: 8-PowerTDFN

패키지: -