페이지 492 - Infineon Technologies 제품 | Heisener Electronics
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Infineon Technologies 제품

기록 16,988
페이지  492/607
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IPI80N06S4L07AKSA1
Infineon Technologies

MOSFET N-CH 60V 80A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고4,656
IRFR15N20DTRRP
Infineon Technologies

MOSFET N-CH 200V 17A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,464
BSP317PE6327T
Infineon Technologies

MOSFET P-CH 250V 0.43A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 370µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고4,352
hot IRFR3706PBF
Infineon Technologies

MOSFET N-CH 20V 75A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고25,200
IRFZ46NL
Infineon Technologies

MOSFET N-CH 55V 53A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고4,400
IRFR3518PBF
Infineon Technologies

MOSFET N-CH 80V 38A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,368
IPB80N06S2L07ATMA3
Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,824
hot IRF7478TRPBF
Infineon Technologies

MOSFET N-CH 60V 7A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고109,380
PTF210101M V1
Infineon Technologies

IC FET RF LDMOS 10W TSSOP-10

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 180mA
  • Power - Output: 10W
  • Voltage - Rated: 65V
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: PG-RFP-10
패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
재고6,288
BFS 460L6 E6327
Infineon Technologies

TRANSISTOR RF TWIN NPN TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5.8V
  • Frequency - Transition: 22GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
패키지: 6-XFDFN
재고2,784
BFP193WH6327XTSA1
Infineon Technologies

TRANS RF NPN 12V 80MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 13.5dB ~ 20.5dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고5,088
BCR 141S E6727
Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 130MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고2,768
IDH08G65C5XKSA2
Infineon Technologies

DIODE SCHOTTKY 650V 8A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 140µA @ 650V
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고7,184
IDW75D65D1XKSA1
Infineon Technologies

DIODE GEN PURP 650V 150A TO247-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 150A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 75A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 108ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: TO-247-3
재고13,140
IDM05G120C5XTMA1
Infineon Technologies

DIODE SCHOTTKY 1200V 5A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 33µA @ 1200V
  • Capacitance @ Vr, F: 301pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,968
BAS4006E6433HTMA1
Infineon Technologies

DIODE ARRAY SCHOTTKY 40V SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 120mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100ps
  • Current - Reverse Leakage @ Vr: 1µA @ 30V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고7,840
TLS205B0LDVXUMA1
Infineon Technologies

IC REG LIN POS ADJ 500MA 10TSON

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 20V
  • Voltage - Output (Min/Fixed): 1.22V
  • Voltage - Output (Max): 20V
  • Voltage Dropout (Max): 0.45V @ 500mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA ~ 31mA
  • PSRR: 65dB (120Hz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Reverse Polarity
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-TFDFN Exposed Pad
  • Supplier Device Package: PG-TSON-10
패키지: 10-TFDFN Exposed Pad
재고7,696
IRS4428SPBF
Infineon Technologies

IC DVR LOW SIDE 25V 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 6 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 2.3A, 3.3A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,656
ICE3A1065LJHKLA1
Infineon Technologies

IC OFFLINE CTRLR SMPS OTP 8DIP

  • Output Isolation: Isolated
  • Internal Switch(s): Yes
  • Voltage - Breakdown: 650V
  • Topology: Flyback
  • Voltage - Start Up: 18V
  • Voltage - Supply (Vcc/Vdd): 10.5 V ~ 26 V
  • Duty Cycle: 75%
  • Frequency - Switching: 100kHz
  • Power (Watts): 32W
  • Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
  • Control Features: -
  • Operating Temperature: -25°C ~ 130°C (TJ)
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: PG-DIP-8
  • Mounting Type: Through Hole
패키지: 8-DIP (0.300", 7.62mm)
재고7,168
IPTG054N15NM5ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 143A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 191µA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8
  • Package / Case: 8-PowerSMD, Gull Wing
패키지: -
재고5,265
IRF7380QTRPBF
Infineon Technologies

MOSFET 2N-CH 80V 3.6A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A
  • Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: -
Request a Quote
PEB2095PVA5
Infineon Technologies

OCTAT-P OCTAL TRANSCEICER

  • Function: ISDN
  • Interface: IOM-2, PCM
  • Number of Circuits: -
  • Voltage - Supply: 4.75V ~ 5.25V
  • Current - Supply: 20mA
  • Power (Watts): -
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Through Hole
  • Package / Case: 24-DIP (0.600", 15.24mm)
  • Supplier Device Package: P-DIP-24
패키지: -
Request a Quote
T4021N52TOHXPSA1
Infineon Technologies

SCR MODULE 5350V 6100A DO200AE

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 5.35 kV
  • Current - On State (It (AV)) (Max): 5460 A
  • Current - On State (It (RMS)) (Max): 6100 A
  • Voltage - Gate Trigger (Vgt) (Max): 3.5 V
  • Current - Gate Trigger (Igt) (Max): 350 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 105000A @ 50Hz
  • Current - Hold (Ih) (Max): 350 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
패키지: -
Request a Quote
BSM100GB120DLCHOSA1
Infineon Technologies

IGBT MOD 1200V 100A 830W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 830 W
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
CG8234AA
Infineon Technologies

IC SRAM MICROPOWER

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
CYT3BBBCEBQ0BZEGST
Infineon Technologies

IC MCU 32BT 4.0625MB FLSH 272BGA

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 250MHz
  • Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
  • Number of I/O: 220
  • Program Memory Size: 4.0625MB (4.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 256K x 8
  • RAM Size: 768K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 90x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 272-LFBGA
  • Supplier Device Package: 272-BGA (16x16)
패키지: -
Request a Quote
FP150R12KT4B11BPSA1
Infineon Technologies

IGBT MODULE 1200V 150A

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
SIDC09D60F6X1SA4
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
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