페이지 1047 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MTFC4GACAAEA-WT	Micron Technology Inc.	MOD MCP EMMC 16GB WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,656	FLASH	FLASH - NAND	32Gb (4G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	-	-	-
AT45DB041D-SSU-2.5-SL383	Adesto Technologies	IC FLASH 4MBIT 50MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (264 Bytes x 2048 pages) Memory Interface: SPI Clock Frequency: 50MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,568	FLASH	FLASH	4Mb (264 Bytes x 2048 pages)	SPI	50MHz	4ms	-	2.5 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT45DB021D-SH-B	Adesto Technologies	IC FLASH 2MBIT 66MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (264 Bytes x 1024 pages) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.209", 5.30mm Width)	재고11,892	FLASH	FLASH	2Mb (264 Bytes x 1024 pages)	SPI	66MHz	4ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
MT42L128M32D2KL-3 IT:A	Micron Technology Inc.	IC SDRAM 4GBIT 333MHZ 168FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-FBGA (12x12)	패키지: 168-WFBGA	재고6,544	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	333MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	168-WFBGA	168-FBGA (12x12)
IS42S32400D-7BI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 143MHZ 90FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고4,320	DRAM	SDRAM	128Mb (4M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IS42S32200C1-7TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 143MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	패키지: 86-TFSOP (0.400", 10.16mm Width)	재고7,600	DRAM	SDRAM	64Mb (2M x 32)	Parallel	143MHz	-	5.5ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
CY62168DV30LL-55BVXIT	Cypress Semiconductor Corp	IC SRAM 16MBIT 55NS 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (8x9.5)	패키지: 48-VFBGA	재고3,456	SRAM	SRAM - Asynchronous	16Mb (2M x 8)	Parallel	-	55ns	55ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (8x9.5)
AT49BV802AT-70TU	Microchip Technology	IC FLASH 8MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200µs Access Time: 70ns Voltage - Supply: 2.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고94,104	FLASH	FLASH	8Mb (1M x 8, 512K x 16)	Parallel	-	200µs	70ns	2.65 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
71V65803S133PFGI8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고5,328	SRAM	SRAM - Synchronous ZBT	9Mb (512K x 18)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
71V3556SA133BQ8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고7,616	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
S29VS064RABBHW010	Cypress Semiconductor Corp	IC FLASH 64MBIT 108MHZ 44VTBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 108MHz Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-VFBGA Supplier Device Package: 44-VTBGA (7.5x5)	패키지: 44-VFBGA	재고5,808	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	108MHz	60ns	80ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	44-VFBGA	44-VTBGA (7.5x5)
S29GL064S80TFIV60	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,256	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	-	60ns	80ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
AS4C2M43D1A-5BIN	Alliance Memory, Inc.	DDR SDRAM Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,272	DRAM	SDRAM	64Mb (2M x 32)	Parallel	200MHz	-	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	-	-	-
71V256SA15YGI8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 15NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	패키지: 28-BSOJ (0.300", 7.62mm Width)	재고2,528	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
24LC04B/ST	Microchip Technology	IC EEPROM 4KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고3,952	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MX25U4035MI-25G	Macronix	IC FLASH 4MBIT 40MHZ 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: 300µs, 7ms Access Time: - Voltage - Supply: 1.65 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고8,652	FLASH	FLASH - NOR	4Mb (512K x 8)	SPI	40MHz	300µs, 7ms	-	1.65 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SST26WF080B-104I/SN	Microchip Technology	IC FLASH 8MBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (1M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고17,688	FLASH	FLASH	8Mb (1M x 8)	SPI - Quad I/O	104MHz	1.5ms	-	1.65 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY7C1415KV18-250BZXI	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고4,480	SRAM	SRAM - Synchronous, QDR II	36Mb (1M x 36)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
S26KS512SDGBHB030	Cypress Semiconductor Corp	IC 512 MEG Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 96ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	패키지: 24-VBGA	재고7,836	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	133MHz	-	96ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
BR93G86FVT-3GE2	Rohm Semiconductor	IC EEPROM 16KBIT 3MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8, 1K x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고27,750	EEPROM	EEPROM	16Kb (2K x 8, 1K x 16)	SPI	3MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
DS1245W-150+	Maxim Integrated	IC NVSRAM 1MBIT 150NS 32EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.600", 15.24mm) Supplier Device Package: 32-EDIP	패키지: 32-DIP Module (0.600", 15.24mm)	재고7,488	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	Parallel	-	150ns	150ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Through Hole	32-DIP Module (0.600", 15.24mm)	32-EDIP
MT28EW256ABA1LPC-0SIT	Micron Technology Inc.	IC FLASH 256MBIT 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 95ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	패키지: 64-LBGA	재고16,116	FLASH	FLASH - NOR	256Mb (32M x 8, 16M x 16)	Parallel	-	60ns	95ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-LBGA (11x13)
93AA46BT-I/OT	Microchip Technology	IC EEPROM 1KBIT 2MHZ SOT23-6 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: SOT-23-6	재고25,068	EEPROM	EEPROM	1Kb (64 x 16)	SPI	2MHz	6ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	SOT-23-6	SOT-23-6
70V9289L7PF	IDT, Integrated Device Technology Inc	IC SRAM 1M PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고6,048	SRAM	SRAM - Dual Port, Synchronous	1Mb (64K x 16)	Parallel	-	-	7.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT40A2G8SA-062E-IT-F-TR	Micron Technology Inc.	IC DRAM 16GBIT PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 19 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (7.5x11)	패키지: -	Request a Quote	DRAM	SDRAM - DDR4	16Gbit	Parallel	1.6 GHz	15ns	19 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (7.5x11)
W25M02GVSFJT	Winbond Electronics	IC FLASH 2GBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 700µs Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	SPI - Quad I/O	104 MHz	700µs	7 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IS25WX128-JHLA3-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 128MBIT SPI/OCT 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 128Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	패키지: -	Request a Quote	FLASH	FLASH	128Mbit	SPI - Octal I/O	200 MHz	-	-	1.7V ~ 2V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
MTFC128GAZAOTD-AAT-TR	Micron Technology Inc.	UFS 1T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,000	-	-	-	-	-	-	-	-	-	-	-	-

MTFC4GACAAEA-WT

Micron Technology Inc.

MOD MCP EMMC 16GB WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,656

FLASH

FLASH - NAND

32Gb (4G x 8)

MMC

-

2.7 V ~ 3.6 V

-25°C ~ 85°C (TA)

-

AT45DB041D-SSU-2.5-SL383

Adesto Technologies

IC FLASH 4MBIT 50MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (264 Bytes x 2048 pages)
Memory Interface: SPI
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,568

FLASH

4Mb (264 Bytes x 2048 pages)

SPI

50MHz

4ms

-

2.5 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT45DB021D-SH-B

Adesto Technologies

IC FLASH 2MBIT 66MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (264 Bytes x 1024 pages)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.209", 5.30mm Width)

재고11,892

FLASH

2Mb (264 Bytes x 1024 pages)

SPI

66MHz

4ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

MT42L128M32D2KL-3 IT:A

Micron Technology Inc.

IC SDRAM 4GBIT 333MHZ 168FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-FBGA (12x12)

패키지: 168-WFBGA

재고6,544

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

333MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

168-WFBGA

168-FBGA (12x12)

IS42S32400D-7BI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 90FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고4,320

DRAM

SDRAM

128Mb (4M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IS42S32200C1-7TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 143MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

패키지: 86-TFSOP (0.400", 10.16mm Width)

재고7,600

DRAM

SDRAM

64Mb (2M x 32)

Parallel

143MHz

-

5.5ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

CY62168DV30LL-55BVXIT

Cypress Semiconductor Corp

IC SRAM 16MBIT 55NS 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (8x9.5)

패키지: 48-VFBGA

재고3,456

SRAM

SRAM - Asynchronous

16Mb (2M x 8)

Parallel

-

55ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (8x9.5)

AT49BV802AT-70TU

Microchip Technology

IC FLASH 8MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200µs
Access Time: 70ns
Voltage - Supply: 2.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고94,104

FLASH

8Mb (1M x 8, 512K x 16)

Parallel

-

200µs

70ns

2.65 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

71V65803S133PFGI8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고5,328

SRAM

SRAM - Synchronous ZBT

9Mb (512K x 18)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

71V3556SA133BQ8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고7,616

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

S29VS064RABBHW010

Cypress Semiconductor Corp

IC FLASH 64MBIT 108MHZ 44VTBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-VFBGA
Supplier Device Package: 44-VTBGA (7.5x5)

패키지: 44-VFBGA

재고5,808

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

108MHz

60ns

80ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

44-VFBGA

44-VTBGA (7.5x5)

S29GL064S80TFIV60

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,256

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

-

60ns

80ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

AS4C2M43D1A-5BIN

Alliance Memory, Inc.

DDR SDRAM

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,272

DRAM

SDRAM

64Mb (2M x 32)

Parallel

200MHz

-

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

-

71V256SA15YGI8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 15NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

패키지: 28-BSOJ (0.300", 7.62mm Width)

재고2,528

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

15ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

24LC04B/ST

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고3,952

EEPROM

4Kb (256 x 8 x 2)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MX25U4035MI-25G

Macronix

IC FLASH 4MBIT 40MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 300µs, 7ms
Access Time: -
Voltage - Supply: 1.65 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고8,652

FLASH

FLASH - NOR

4Mb (512K x 8)

SPI

40MHz

300µs, 7ms

-

1.65 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SST26WF080B-104I/SN

Microchip Technology

IC FLASH 8MBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고17,688

FLASH

8Mb (1M x 8)

SPI - Quad I/O

104MHz

1.5ms

-

1.65 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY7C1415KV18-250BZXI

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고4,480

SRAM

SRAM - Synchronous, QDR II

36Mb (1M x 36)

Parallel

250MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

S26KS512SDGBHB030

Cypress Semiconductor Corp

IC 512 MEG

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 96ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

패키지: 24-VBGA

재고7,836

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

133MHz

-

96ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

BR93G86FVT-3GE2

Rohm Semiconductor

IC EEPROM 16KBIT 3MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8, 1K x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고27,750

EEPROM

16Kb (2K x 8, 1K x 16)

SPI

3MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

DS1245W-150+

Maxim Integrated

IC NVSRAM 1MBIT 150NS 32EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP Module (0.600", 15.24mm)
Supplier Device Package: 32-EDIP

패키지: 32-DIP Module (0.600", 15.24mm)

재고7,488

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

Parallel

-

150ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Through Hole

32-DIP Module (0.600", 15.24mm)

32-EDIP

MT28EW256ABA1LPC-0SIT

Micron Technology Inc.

IC FLASH 256MBIT 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8, 16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 95ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LBGA (11x13)

패키지: 64-LBGA

재고16,116

FLASH

FLASH - NOR

256Mb (32M x 8, 16M x 16)

Parallel

-

60ns

95ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-LBGA (11x13)

93AA46BT-I/OT

Microchip Technology

IC EEPROM 1KBIT 2MHZ SOT23-6

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: SOT-23-6

재고25,068

EEPROM

1Kb (64 x 16)

SPI

2MHz

6ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

SOT-23-6

70V9289L7PF

IDT, Integrated Device Technology Inc

IC SRAM 1M PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고6,048

SRAM

SRAM - Dual Port, Synchronous

1Mb (64K x 16)

Parallel

-

7.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT40A2G8SA-062E-IT-F-TR

Micron Technology Inc.

IC DRAM 16GBIT PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (7.5x11)

패키지: -

Request a Quote

DRAM

SDRAM - DDR4

16Gbit

Parallel

1.6 GHz

15ns

19 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (7.5x11)

W25M02GVSFJT

Winbond Electronics

IC FLASH 2GBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 700µs
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

2Gbit

SPI - Quad I/O

104 MHz

700µs

7 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IS25WX128-JHLA3-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/OCT 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 128Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

패키지: -

Request a Quote

FLASH

128Mbit

SPI - Octal I/O

200 MHz

-

1.7V ~ 2V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

MTFC128GAZAOTD-AAT-TR

Micron Technology Inc.

UFS 1T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,000

-