페이지 1049 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS42SM16400K-6BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
패키지: 54-TFBGA
재고2,096
DRAM
SDRAM - Mobile
64Mb (4M x 16)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
CY7C1011CV33-12ZSXET
Cypress Semiconductor Corp

IC SRAM 2MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고5,968
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot IDT71P72804S250BQ
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 250MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.3ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
패키지: 165-TBGA
재고6,272
SRAM
SRAM - Synchronous, QDR II
18Mb (1M x 18)
Parallel
250MHz
-
6.3ns
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
IS42S81600D-6TL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고5,728
DRAM
SDRAM
128Mb (16M x 8)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
hot IS45S32400B-7TLA1
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
패키지: 86-TFSOP (0.400", 10.16mm Width)
재고98,232
DRAM
SDRAM
128Mb (4M x 32)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
CAT93C66LI-G
ON Semiconductor

IC EEPROM 4KBIT 2MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8, 256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고6,400
EEPROM
EEPROM
4Kb (512 x 8, 256 x 16)
SPI
2MHz
-
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
CY7C057V-15AXI
Cypress Semiconductor Corp

IC SRAM 1.152MBIT 15NS 144TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 1.152Mb (32K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-LQFP
  • Supplier Device Package: 144-TQFP (20x20)
패키지: 144-LQFP
재고5,856
SRAM
SRAM - Dual Port, Asynchronous
1.152Mb (32K x 36)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
144-LQFP
144-TQFP (20x20)
MT28F400B5SG-8 B
Micron Technology Inc.

IC FLASH 4MBIT 80NS 44SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 80ns
  • Access Time: 80ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-SOIC (0.496", 12.60mm Width)
  • Supplier Device Package: 44-SOP
패키지: 44-SOIC (0.496", 12.60mm Width)
재고6,544
FLASH
FLASH - NOR
4Mb (512K x 8, 256K x 16)
Parallel
-
80ns
80ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
44-SOIC (0.496", 12.60mm Width)
44-SOP
MT29F512G08CFCBBWP-10M:B TR
Micron Technology Inc.

IC FLASH 512GBIT 100MHZ 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,920
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
N25Q00AA13G1240E
Micron Technology Inc.

IC FLASH 1GBIT 108MHZ 24LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (256M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-LBGA
  • Supplier Device Package: 24-LPBGA (6x8)
패키지: 24-LBGA
재고7,952
FLASH
FLASH - NOR
1Gb (256M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-LBGA
24-LPBGA (6x8)
71V3556SA150BGG
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
패키지: 119-BGA
재고2,100
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
hot SST25VF040B-50-4C-SAF-T
Microchip Technology

IC FLASH 4MBIT 50MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 50MHz
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고48,180
FLASH
FLASH
4Mb (512K x 8)
SPI
50MHz
10µs
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
24LC024T/SN
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,472
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AS4C128M16D3L-12BAN
Alliance Memory, Inc.

IC SDRAM 2GBIT 800MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-BGA (13x9)
패키지: 96-TFBGA
재고6,072
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
800MHz
15ns
20ns
1.283 V ~ 1.45 V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-BGA (13x9)
CY7C25702KV18-400BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 400MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II+
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: 165-LBGA
재고6,960
SRAM
SRAM - Synchronous, DDR II+
72Mb (2M x 36)
Parallel
400MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
7005S35PFG
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 35NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: 64-LQFP
재고6,132
SRAM
SRAM - Dual Port, Asynchronous
64Kb (8K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
hot SST25VF080B-50-4C-S2AF
Microchip Technology

IC FLASH 8MBIT 50MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 50MHz
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.209", 5.30mm Width)
재고14,496
FLASH
FLASH
8Mb (1M x 8)
SPI
50MHz
10µs
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
BR25H080F-2CE2
Rohm Semiconductor

IC EEPROM 8K SPI 10MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.173", 4.40mm Width)
재고5,936
EEPROM
EEPROM
8Kb (1K x 8)
SPI
10MHz
4ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
S29PL032J55BFI120A
Cypress Semiconductor Corp

IC FLASH MEM NOR 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-FBGA (8.15x6.15)
패키지: 48-VFBGA
재고6,544
FLASH
FLASH - NOR
32Mb (2M x 16)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C
Surface Mount
48-VFBGA
48-FBGA (8.15x6.15)
CG8272AAT
Cypress Semiconductor Corp

IC SRAM

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,824
-
-
-
-
-
-
-
-
-
-
-
-
W25N02JWZEIC
Winbond Electronics

IC FLASH 2GBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 8 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
2Gbit
SPI - Quad I/O, DTR
166 MHz
700µs
8 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
SM671PXB-ADST
Silicon Motion, Inc.

IC FLASH 256GBIT UFS3.1 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 256Gbit
  • Memory Interface: UFS3.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (TLC)
256Gbit
UFS3.1
-
-
-
-
-25°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
IS46TR16512S2DL-125KBLA2
ISSI, Integrated Silicon Solution Inc

IC DRAM 8GBIT PARALLEL 96LWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-LFBGA
  • Supplier Device Package: 96-LWBGA (9x13)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
8Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
96-LFBGA
96-LWBGA (9x13)
M58BW016FB7T3F
Alliance Memory, Inc.

IC FLASH 16MBIT CFI 80PQFP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - Boot Block
  • Memory Size: 16Mbit
  • Memory Interface: CFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-BQFP
  • Supplier Device Package: 80-PQFP (14x20)
패키지: -
재고4,032
FLASH
FLASH - Boot Block
16Mbit
CFI
-
-
70 ns
2.7V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
80-BQFP
80-PQFP (14x20)
27C128-30MD
Rochester Electronics, LLC

IC EPROM 128KBIT PARALLEL

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 128Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 300 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
EPROM
EPROM - OTP
128Kbit
Parallel
-
-
300 ns
4.5V ~ 5.5V
-55°C ~ 125°C (TA)
-
-
-
W25Q32JWBYIG-TR
Winbond Electronics

IC FLSH 32MBIT SPI/QUAD 12WLCSP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 12-UFBGA, WLCSP
  • Supplier Device Package: 12-WLCSP (2.31x2.03)
패키지: -
Request a Quote
FLASH
FLASH - NOR
32Mbit
SPI - Quad I/O
133 MHz
5ms
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
12-UFBGA, WLCSP
12-WLCSP (2.31x2.03)
FEMC128GBA-E530
Flexxon Pte Ltd

IC FLASH 1TBIT EMMC 5.1 100FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 1Tbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-FBGA (14x18)
패키지: -
재고300
FLASH
FLASH - NAND (TLC)
1Tbit
eMMC_5.1
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C
Surface Mount
100-LBGA
100-FBGA (14x18)
MT53E256M16D1FW-046-AAT-B-TR
Micron Technology Inc.

LPDDR4 4G 256MX16 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
패키지: -
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DRAM
SDRAM - Mobile LPDDR4X
4Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-40°C ~ 105°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)