페이지 1072 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F256G08CKCABH2-10Z:A	Micron Technology Inc.	IC FLASH 256GBIT 100MHZ 100TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-TBGA Supplier Device Package: 100-TBGA (12x18)	패키지: 100-TBGA	재고4,016	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-TBGA	100-TBGA (12x18)
AT25DN011-MAHFGP-Y	Adesto Technologies	IC FLASH 1MBIT 104MHZ 8UDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 8µs, 1.75ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	패키지: 8-UFDFN Exposed Pad	재고2,496	FLASH	FLASH	1Mb (128K x 8)	SPI	104MHz	8µs, 1.75ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
IDT71V2556S166BG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고4,336	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS63LV1024L-12BI	ISSI, Integrated Silicon Solution Inc	IC SRAM 1MBIT 12NS 36MINIBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-MBGA Supplier Device Package: 36-miniBGA (8x10)	패키지: 36-MBGA	재고3,600	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	12ns	12ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	36-MBGA	36-miniBGA (8x10)
CY62256L-70SNXC	Cypress Semiconductor Corp	IC SRAM 256KBIT 70NS 28SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	패키지: 28-SOIC (0.295", 7.50mm Width)	재고6,880	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
MT48V8M16LFF4-8:G TR	Micron Technology Inc.	IC SDRAM 128MBIT 125MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 125MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x8)	패키지: 54-VFBGA	재고3,360	DRAM	SDRAM - Mobile LPSDR	128Mb (8M x 16)	Parallel	125MHz	15ns	7ns	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x8)
AT25010A-10TI-1.8	Microchip Technology	IC EEPROM 1KBIT 20MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고4,240	EEPROM	EEPROM	1Kb (128 x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AT49F001NT-12JC	Microchip Technology	IC FLASH 1MBIT 120NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고180,000	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	50µs	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT45D041A-TC	Microchip Technology	IC FLASH 4MBIT 15MHZ 28TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (264 Bytes x 2048 pages) Memory Interface: SPI Clock Frequency: 15MHz Write Cycle Time - Word, Page: 14ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	패키지: 28-TSSOP (0.465", 11.80mm Width)	재고5,120	FLASH	FLASH	4Mb (264 Bytes x 2048 pages)	SPI	15MHz	14ms	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
CY7C1550KV18-400BZC	Cypress Semiconductor Corp	IC SRAM 72MBIT 400MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II+ Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고4,928	SRAM	SRAM - Synchronous, DDR II+	72Mb (2M x 36)	Parallel	400MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CY7C1461KV33-133AXI	Cypress Semiconductor Corp	SYNC SRAMS Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,008	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	133MHz	-	6.5ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
7005L15PF8	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 15NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고7,344	SRAM	SRAM - Dual Port, Asynchronous	64Kb (8K x 8)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
MX29GL512FDXFI-12G	Macronix	IC FLASH 512MBIT 120NS 64LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 120ns Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA, CSPBGA Supplier Device Package: 64-LFBGA, CSP (11x13)	패키지: 64-LBGA, CSPBGA	재고2,816	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	-	120ns	120ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA, CSPBGA	64-LFBGA, CSP (11x13)
71V416S12BEG8	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 12NS 48CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-CABGA (9x9)	패키지: 48-TFBGA	재고6,784	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFBGA	48-CABGA (9x9)
MT29F2G08ABAFAH4-ITS:F TR	Micron Technology Inc.	IC FLASH 2GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고7,952	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
71016S12PHG	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 12NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고6,224	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
602-20012	Parallax Inc.	IC EEPROM 128KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,296	EEPROM	EEPROM	128Kb (16K x 8)	I2C	1MHz	5ms	400ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
25AA160D-I/SN	Microchip Technology	IC EEPROM 16KBIT 10MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,696	EEPROM	EEPROM	16Kb (2K x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24LC32A-E/ST	Microchip Technology	IC EEPROM 32KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고2,624	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
24LCS22AT-I/SN	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고271,140	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	10ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MX25L4006EM2I-12G	Macronix	IC FLASH 4MBIT 86MHZ 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 86MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.209", 5.30mm Width)	재고247,152	FLASH	FLASH - NOR	4Mb (512K x 8)	SPI	86MHz	50µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOP
IS25LQ020B-JNLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 2MBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mb (256K x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고29,196	FLASH	FLASH - NOR	2Mb (256K x 8)	SPI - Quad I/O	104MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24AA08-I/SN	Microchip Technology	IC EEPROM 8KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (256 x 8 x 4) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고35,676	EEPROM	EEPROM	8Kb (256 x 8 x 4)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS43TR16128C-107MBLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 195ps Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고5,056	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	933MHz	15ns	195ps	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
71V632S8PFG	IDT, Integrated Device Technology Inc	IC SRAM 2MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8 ns Voltage - Supply: 3.135V ~ 3.63V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	2Mbit	Parallel	-	-	8 ns	3.135V ~ 3.63V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
S29GL256N11FAI010	Infineon Technologies	IC FLASH 256MBIT PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: -	Request a Quote	FLASH	FLASH - NOR	256Mbit	Parallel	-	110ns	110 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
R1LV0416DBG-7LI-B0	Renesas Electronics Corporation	IC SRAM 4MBIT PARALLEL 48TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (7.5x8.5)	패키지: -	Request a Quote	SRAM	SRAM	4Mbit	Parallel	-	70ns	70 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (7.5x8.5)
MTFC64GASAONS-IT	Micron Technology Inc.	IC FLASH 512GBIT UFS2.1 153TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gbit Memory Interface: UFS2.1 Clock Frequency: 52 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-TFBGA (11.5x13)	패키지: -	재고3,555	FLASH	FLASH - NAND	512Gbit	UFS2.1	52 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 95°C (TC)	Surface Mount	153-TFBGA	153-TFBGA (11.5x13)

MT29F256G08CKCABH2-10Z:A

Micron Technology Inc.

IC FLASH 256GBIT 100MHZ 100TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TBGA
Supplier Device Package: 100-TBGA (12x18)

패키지: 100-TBGA

재고4,016

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-TBGA

100-TBGA (12x18)

AT25DN011-MAHFGP-Y

Adesto Technologies

IC FLASH 1MBIT 104MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 8µs, 1.75ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

패키지: 8-UFDFN Exposed Pad

재고2,496

FLASH

1Mb (128K x 8)

SPI

104MHz

8µs, 1.75ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

IDT71V2556S166BG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고4,336

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS63LV1024L-12BI

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 36MINIBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-MBGA
Supplier Device Package: 36-miniBGA (8x10)

패키지: 36-MBGA

재고3,600

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

12ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

36-MBGA

36-miniBGA (8x10)

CY62256L-70SNXC

Cypress Semiconductor Corp

IC SRAM 256KBIT 70NS 28SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

재고6,880

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

MT48V8M16LFF4-8:G TR

Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 125MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x8)

패키지: 54-VFBGA

재고3,360

DRAM

SDRAM - Mobile LPSDR

128Mb (8M x 16)

Parallel

125MHz

15ns

7ns

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x8)

AT25010A-10TI-1.8

Microchip Technology

IC EEPROM 1KBIT 20MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고4,240

EEPROM

1Kb (128 x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AT49F001NT-12JC

Microchip Technology

IC FLASH 1MBIT 120NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고180,000

FLASH

1Mb (128K x 8)

Parallel

-

50µs

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT45D041A-TC

Microchip Technology

IC FLASH 4MBIT 15MHZ 28TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (264 Bytes x 2048 pages)
Memory Interface: SPI
Clock Frequency: 15MHz
Write Cycle Time - Word, Page: 14ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

패키지: 28-TSSOP (0.465", 11.80mm Width)

재고5,120

FLASH

4Mb (264 Bytes x 2048 pages)

SPI

15MHz

14ms

-

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

CY7C1550KV18-400BZC

Cypress Semiconductor Corp

IC SRAM 72MBIT 400MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고4,928

SRAM

SRAM - Synchronous, DDR II+

72Mb (2M x 36)

Parallel

400MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CY7C1461KV33-133AXI

Cypress Semiconductor Corp

SYNC SRAMS

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,008

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

133MHz

-

6.5ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

7005L15PF8

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 15NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고7,344

SRAM

SRAM - Dual Port, Asynchronous

64Kb (8K x 8)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

MX29GL512FDXFI-12G

Macronix

IC FLASH 512MBIT 120NS 64LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA, CSPBGA
Supplier Device Package: 64-LFBGA, CSP (11x13)

패키지: 64-LBGA, CSPBGA

재고2,816

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

-

120ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA, CSPBGA

64-LFBGA, CSP (11x13)

71V416S12BEG8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 48CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-CABGA (9x9)

패키지: 48-TFBGA

재고6,784

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFBGA

48-CABGA (9x9)

MT29F2G08ABAFAH4-ITS:F TR

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고7,952

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

71016S12PHG

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고6,224

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

12ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

602-20012

Parallax Inc.

IC EEPROM 128KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,296

EEPROM

128Kb (16K x 8)

I2C

1MHz

5ms

400ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

25AA160D-I/SN

Microchip Technology

IC EEPROM 16KBIT 10MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,696

EEPROM

16Kb (2K x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24LC32A-E/ST

Microchip Technology

IC EEPROM 32KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고2,624

EEPROM

32Kb (4K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

24LCS22AT-I/SN

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고271,140

EEPROM

2Kb (256 x 8)

I2C

400kHz

10ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MX25L4006EM2I-12G

Macronix

IC FLASH 4MBIT 86MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 86MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.209", 5.30mm Width)

재고247,152

FLASH

FLASH - NOR

4Mb (512K x 8)

SPI

86MHz

50µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOP

IS25LQ020B-JNLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 2MBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고29,196

FLASH

FLASH - NOR

2Mb (256K x 8)

SPI - Quad I/O

104MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24AA08-I/SN

Microchip Technology

IC EEPROM 8KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (256 x 8 x 4)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고35,676

EEPROM

8Kb (256 x 8 x 4)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS43TR16128C-107MBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 195ps
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고5,056

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

933MHz

15ns

195ps

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

71V632S8PFG

IDT, Integrated Device Technology Inc

IC SRAM 2MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8 ns
Voltage - Supply: 3.135V ~ 3.63V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous, SDR

2Mbit

Parallel

-

8 ns

3.135V ~ 3.63V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

S29GL256N11FAI010

Infineon Technologies

IC FLASH 256MBIT PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: -

Request a Quote

FLASH

FLASH - NOR

256Mbit

Parallel

-

110ns

110 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

R1LV0416DBG-7LI-B0

Renesas Electronics Corporation

IC SRAM 4MBIT PARALLEL 48TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (7.5x8.5)

패키지: -

Request a Quote

SRAM

4Mbit

Parallel

-

70ns

70 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (7.5x8.5)

MTFC64GASAONS-IT

Micron Technology Inc.

IC FLASH 512GBIT UFS2.1 153TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gbit
Memory Interface: UFS2.1
Clock Frequency: 52 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-TFBGA (11.5x13)

패키지: -

재고3,555

FLASH

FLASH - NAND

512Gbit

UFS2.1

52 MHz

-

2.7V ~ 3.6V

-40°C ~ 95°C (TC)

Surface Mount

153-TFBGA

153-TFBGA (11.5x13)