페이지 1075 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
M93C56-RDS6G	STMicroelectronics	IC EEPROM 2KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고2,288	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	2MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY7C1021BNV33L-15VXC	Cypress Semiconductor Corp	IC SRAM 1MBIT 15NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	패키지: 44-BSOJ (0.400", 10.16mm Width)	재고3,040	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
MT28F320J3BS-11 MET	Micron Technology Inc.	IC FLASH 32MBIT 110NS 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-FBGA Supplier Device Package: 64-FBGA (10x13)	패키지: 64-FBGA	재고5,328	FLASH	FLASH	32Mb (4M x 8, 2M x 16)	Parallel	-	-	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-FBGA	64-FBGA (10x13)
AT49F8192A-90TI	Microchip Technology	IC FLASH 8MBIT 90NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고5,760	FLASH	FLASH	8Mb (1M x 8, 512K x 16)	Parallel	-	50µs	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
70V3389S6PRF8	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 6NS 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (64K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	패키지: 128-LQFP	재고4,064	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (64K x 18)	Parallel	-	-	6ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
7054S35PRF	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 35NS 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	패키지: 128-LQFP	재고6,624	SRAM	SRAM - Quad Port, Asynchronous	32Kb (4K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
CY7C1061GE30-10BVJXI	Cypress Semiconductor Corp	IC SRAM 16MBIT 10NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	패키지: 48-VFBGA	재고5,856	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
71T75602S166BGG8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 166MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고5,712	SRAM	SRAM - Synchronous ZBT	18Mb (512K x 36)	Parallel	166MHz	-	3.5ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS64LPS25636A-166TQLA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9MBIT 166MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고6,192	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	-40°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
IS46TR16128B-15HBLA2	ISSI, Integrated Silicon Solution Inc	IC SDRAM 2GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고3,744	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	667MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
71V25761S200PFGI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고4,896	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
71V35761SA183BQG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 183MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 183MHz Write Cycle Time - Word, Page: - Access Time: 3.3ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고6,144	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	183MHz	-	3.3ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
RC28F640J3F75B TR	Micron Technology Inc.	IC FLASH NOR 640MBIT Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 75ns Access Time: 75ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,408	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	75ns	75ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
24LC1025T-E/SN	Microchip Technology	IC EEPROM 1MBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,776	EEPROM	EEPROM	1Mb (128K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AS4C8M16S-6TAN	Alliance Memory, Inc.	IC SDRAM 128MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 2ns Access Time: 5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고4,832	DRAM	SDRAM	128Mb (8M x 16)	Parallel	166MHz	2ns	5ns	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
23K256-E/ST	Microchip Technology	IC SRAM 256KBIT 20MHZ 8TSSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고2,448	SRAM	SRAM	256Kb (32K x 8)	SPI	20MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SST39LF401C-55-4C-EKE	Microchip Technology	IC FLASH 4MBIT 55NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10µs Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고7,680	FLASH	FLASH	4Mb (256K x 16)	Parallel	-	10µs	55ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
M25PE80-VMW6TG TR	Micron Technology Inc.	IC FLASH 8MBIT 75MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO W	패키지: 8-SOIC (0.209", 5.30mm Width)	재고7,616	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	75MHz	15ms, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO W
11LC160T-I/TT	Microchip Technology	IC EEPROM 16KBIT 100KHZ SOT23-3 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Single Wire Clock Frequency: 100kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,640	EEPROM	EEPROM	16Kb (2K x 8)	Single Wire	100kHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
CY7C1315KV18-250BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고4,832	SRAM	SRAM - Synchronous, QDR II	18Mb (512K x 36)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
W972GG6KB-25 TR	Winbond Electronics	IC DDR2 SDRAM 2GBIT 2.5NS 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-WBGA (8x12.5)	패키지: 84-TFBGA	재고4,912	DRAM	SDRAM - DDR2	2Gb (128M x 16)	Parallel	400MHz	15ns	400ps	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-WBGA (8x12.5)
AT24C02C-MAPD-E	Microchip Technology	1MHZ AUTO GRADE1 8-UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	패키지: 8-UFDFN Exposed Pad	재고3,840	EEPROM	EEPROM	2Kb (256 x 8)	I²C	1MHz	5ms	450ns	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
W25Q128JVFAM	Winbond Electronics	IC FLASH 128MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
S26HS512TGABHI000	Infineon Technologies	IC FLASH 512MBIT SPI 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: SPI Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	패키지: -	재고429	FLASH	FLASH - NOR	512Mbit	SPI	200 MHz	-	-	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
CY7C199C-20ZIT	Cypress Semiconductor Corp	IC SRAM 256KBIT PAR 28TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP I	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	256Kbit	Parallel	-	20ns	20 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP I
FEMC512GBE-E530	Flexxon Pte Ltd	IC FLASH 4TBIT EMMC 5.1 100FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 4Tbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-FBGA (14x18)	패키지: -	재고30	FLASH	FLASH - NAND (TLC)	4Tbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C	Surface Mount	100-LBGA	100-FBGA (14x18)
0LRAM-001-XTP	onsemi	IC EEPROM 256KB I2C CMOS 4WLCSP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
C-3200D4DR8N-16G	ProLabs	16GB DDR4-3200MHz Unbuffered Dua Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

M93C56-RDS6G

STMicroelectronics

IC EEPROM 2KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고2,288

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

2MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY7C1021BNV33L-15VXC

Cypress Semiconductor Corp

IC SRAM 1MBIT 15NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

패키지: 44-BSOJ (0.400", 10.16mm Width)

재고3,040

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

MT28F320J3BS-11 MET

Micron Technology Inc.

IC FLASH 32MBIT 110NS 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-FBGA
Supplier Device Package: 64-FBGA (10x13)

패키지: 64-FBGA

재고5,328

FLASH

32Mb (4M x 8, 2M x 16)

Parallel

-

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-FBGA

64-FBGA (10x13)

AT49F8192A-90TI

Microchip Technology

IC FLASH 8MBIT 90NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고5,760

FLASH

8Mb (1M x 8, 512K x 16)

Parallel

-

50µs

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

70V3389S6PRF8

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 6NS 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (64K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

패키지: 128-LQFP

재고4,064

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (64K x 18)

Parallel

-

6ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

7054S35PRF

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 35NS 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

패키지: 128-LQFP

재고6,624

SRAM

SRAM - Quad Port, Asynchronous

32Kb (4K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

CY7C1061GE30-10BVJXI

Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

패키지: 48-VFBGA

재고5,856

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

71T75602S166BGG8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 166MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고5,712

SRAM

SRAM - Synchronous ZBT

18Mb (512K x 36)

Parallel

166MHz

-

3.5ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS64LPS25636A-166TQLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 166MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고6,192

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

-40°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

IS46TR16128B-15HBLA2

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고3,744

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

667MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

71V25761S200PFGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고4,896

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

71V35761SA183BQG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 183MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 183MHz
Write Cycle Time - Word, Page: -
Access Time: 3.3ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고6,144

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

183MHz

-

3.3ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

RC28F640J3F75B TR

Micron Technology Inc.

IC FLASH NOR 640MBIT

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 75ns
Access Time: 75ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,408

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

75ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

24LC1025T-E/SN

Microchip Technology

IC EEPROM 1MBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,776

EEPROM

1Mb (128K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AS4C8M16S-6TAN

Alliance Memory, Inc.

IC SDRAM 128MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고4,832

DRAM

SDRAM

128Mb (8M x 16)

Parallel

166MHz

2ns

5ns

3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

23K256-E/ST

Microchip Technology

IC SRAM 256KBIT 20MHZ 8TSSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고2,448

SRAM

256Kb (32K x 8)

SPI

20MHz

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SST39LF401C-55-4C-EKE

Microchip Technology

IC FLASH 4MBIT 55NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10µs
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고7,680

FLASH

4Mb (256K x 16)

Parallel

-

10µs

55ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

M25PE80-VMW6TG TR

Micron Technology Inc.

IC FLASH 8MBIT 75MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO W

패키지: 8-SOIC (0.209", 5.30mm Width)

재고7,616

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

75MHz

15ms, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO W

11LC160T-I/TT

Microchip Technology

IC EEPROM 16KBIT 100KHZ SOT23-3

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Single Wire
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,640

EEPROM

16Kb (2K x 8)

Single Wire

100kHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

CY7C1315KV18-250BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고4,832

SRAM

SRAM - Synchronous, QDR II

18Mb (512K x 36)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

W972GG6KB-25 TR

Winbond Electronics

IC DDR2 SDRAM 2GBIT 2.5NS 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-WBGA (8x12.5)

패키지: 84-TFBGA

재고4,912

DRAM

SDRAM - DDR2

2Gb (128M x 16)

Parallel

400MHz

15ns

400ps

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-WBGA (8x12.5)

AT24C02C-MAPD-E

Microchip Technology

1MHZ AUTO GRADE1 8-UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

패키지: 8-UFDFN Exposed Pad

재고3,840

EEPROM

2Kb (256 x 8)

I²C

1MHz

5ms

450ns

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

W25Q128JVFAM

Winbond Electronics

IC FLASH 128MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: -

Request a Quote

FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

S26HS512TGABHI000

Infineon Technologies

IC FLASH 512MBIT SPI 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: SPI
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

패키지: -

재고429

FLASH

FLASH - NOR

512Mbit

SPI

200 MHz

-

1.7V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

CY7C199C-20ZIT

Cypress Semiconductor Corp

IC SRAM 256KBIT PAR 28TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP I

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

256Kbit

Parallel

-

20ns

20 ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP I

FEMC512GBE-E530

Flexxon Pte Ltd

IC FLASH 4TBIT EMMC 5.1 100FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 4Tbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-FBGA (14x18)

패키지: -

재고30

FLASH

FLASH - NAND (TLC)

4Tbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C

Surface Mount

100-LBGA

100-FBGA (14x18)

0LRAM-001-XTP

onsemi

IC EEPROM 256KB I2C CMOS 4WLCSP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

C-3200D4DR8N-16G

ProLabs

16GB DDR4-3200MHz Unbuffered Dua

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-