페이지 1285 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IDT71V25761YSA200BQI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 200MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고7,856	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	200MHz	-	5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IS62WV5128BLL-55HI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 55NS 32STSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-sTSOP I	패키지: 32-LFSOP (0.465", 11.80mm Width)	재고2,944	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	55ns	55ns	2.5 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-LFSOP (0.465", 11.80mm Width)	32-sTSOP I
CY7C1347G-250AXCT	Cypress Semiconductor Corp	IC SRAM 4.5MBIT 250MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.6ns Voltage - Supply: 3.15 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고5,616	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	250MHz	-	2.6ns	3.15 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
CY62157EV18LL-45BVXI	Cypress Semiconductor Corp	IC SRAM 8MBIT 45NS 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 1.65 V ~ 2.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	패키지: 48-VFBGA	재고7,648	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	45ns	45ns	1.65 V ~ 2.25 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
AT25160AN-10SU-2.7	Microchip Technology	IC EEPROM 16KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고312,168	EEPROM	EEPROM	16Kb (2K x 8)	SPI	20MHz	5ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT49F512-70VC	Microchip Technology	IC FLASH 512KBIT 70NS 32VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	패키지: 32-TFSOP (0.488", 12.40mm Width)	재고5,232	FLASH	FLASH	512Kb (64K x 8)	Parallel	-	50µs	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
AT28C17E-15PI	Microchip Technology	IC EEPROM 16KBIT 150NS 28DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200µs Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	패키지: 28-DIP (0.600", 15.24mm)	재고4,800	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	200µs	150ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
AT25020-10PI	Microchip Technology	IC EEPROM 2KBIT 2.1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고5,808	EEPROM	EEPROM	2Kb (256 x 8)	SPI	3MHz	5ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
70T3589S166BF	IDT, Integrated Device Technology Inc	IC SRAM 2MBIT 166MHZ 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 2Mb (64K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.6ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	패키지: 208-LFBGA	재고6,576	SRAM	SRAM - Dual Port, Synchronous	2Mb (64K x 36)	Parallel	166MHz	-	3.6ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
70V3569S4BF	IDT, Integrated Device Technology Inc	IC SRAM 576KBIT 4.2NS 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 576Kb (16K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	패키지: 208-LFBGA	재고2,912	SRAM	SRAM - Dual Port, Synchronous	576Kb (16K x 36)	Parallel	-	-	4.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
MT29F1T08CMCBBJ4-37ES:B TR	Micron Technology Inc.	IC FLASH 1TBIT 267MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,712	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	267MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
CY7C1462KV25-167BZI	Cypress Semiconductor Corp	IC SRAM 36MBIT 167MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	패키지: 165-LBGA	재고5,328	SRAM	SRAM - Synchronous	36Mb (2M x 18)	Parallel	167MHz	-	3.4ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
7133LA25JGI8	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 25NS 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (2K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	패키지: 68-LCC (J-Lead)	재고6,720	SRAM	SRAM - Dual Port, Asynchronous	32Kb (2K x 16)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
6116SA45TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 45NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고7,568	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
MT40A1G4RH-075E:B TR	Micron Technology Inc.	IC SDRAM 4GBIT 1.33GHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (1G x 4) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x10.5)	패키지: 78-TFBGA	재고3,792	DRAM	SDRAM - DDR4	4Gb (1G x 4)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9x10.5)
MT48LC4M32B2P-6A AAT:L TR	Micron Technology Inc.	IC SDRAM 128MBIT 166MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	패키지: 86-TFSOP (0.400", 10.16mm Width)	재고5,008	DRAM	SDRAM	128Mb (4M x 32)	Parallel	167MHz	12ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
24AA256T-I/CS16K	Microchip Technology	IC EEPROM 256KBIT 400KHZ 8CSP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFBGA, CSPBGA Supplier Device Package: 8-CSP	패키지: 8-UFBGA, CSPBGA	재고5,008	EEPROM	EEPROM	256Kb (32K x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFBGA, CSPBGA	8-CSP
MT47H64M4BP-37E:B TR	Micron Technology Inc.	IC SDRAM 256MBIT 266MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 256Mb (64M x 4) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: 15ns Access Time: 500ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-FBGA Supplier Device Package: 60-FBGA (8x12)	패키지: 60-FBGA	재고4,304	DRAM	SDRAM - DDR2	256Mb (64M x 4)	Parallel	267MHz	15ns	500ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-FBGA	60-FBGA (8x12)
IS49NLS93200-25WBLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 288M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 288Mb (32M x 9) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고4,976	DRAM	DRAM	288Mb (32M x 9)	Parallel	400MHz	-	20ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
S29GL128P90FFSS70	Cypress Semiconductor Corp	IC FLASH 128M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고6,336	FLASH	FLASH - NOR	128Mb (16M x 8)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	0°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
MT53D512M32D2NP-053 WT:D TR	Micron Technology Inc.	IC DRAM 16G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,544	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
93LC56CT-E/MC15KVAO	Microchip Technology	2K 256X8 OR 128X16 SERIAL EE EXT Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x3)	패키지: 8-VFDFN Exposed Pad	재고6,016	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	2MHz	6ms	-	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x3)
GS816218DGD-250I	GSI Technology Inc.	IC SRAM 18MBIT PARALLEL 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, Standard Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 250 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (15x13)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous, Standard	18Mbit	Parallel	250 MHz	-	-	2.3V ~ 2.7V, 3V ~ 3.6V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (15x13)
GS81284Z36GB-250I	GSI Technology Inc.	IC SRAM 144MBIT PAR 119FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, ZBT Memory Size: 144Mbit Memory Interface: Parallel Clock Frequency: 250 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-FPBGA (22x14)	패키지: -	재고339	SRAM	SRAM - Synchronous, ZBT	144Mbit	Parallel	250 MHz	-	-	2.3V ~ 2.7V, 3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-FPBGA (22x14)
AS7C316098B-10BIN	Alliance Memory, Inc.	IC SRAM 16MBIT PARALLEL 48TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: -	재고1,440	SRAM	SRAM - Asynchronous	16Mbit	Parallel	-	10ns	10 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-LFBGA	48-TFBGA (6x8)
NDB56PFC-4DIT	Insignis Technology Corporation	DDR2 512MB X16 FBGA 8X12.5(X1.2) Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mbit Memory Interface: SSTL_18 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 400 ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	패키지: -	재고627	DRAM	SDRAM - DDR2	512Mbit	SSTL_18	400 MHz	15ns	400 ps	1.7V ~ 1.9V	-40°C ~ 95°C (TC)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
CY62137CVSL-70BAIT	Cypress Semiconductor Corp	IC SRAM 2MBIT PARALLEL 48FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-FBGA (7x7)	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	2Mbit	Parallel	-	70ns	70 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-FBGA (7x7)
M5M5256DFP-55LL-SM	Renesas Electronics Corporation	STANDARD SRAM, 32KX8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IDT71V25761YSA200BQI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 200MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고7,856

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

200MHz

-

5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IS62WV5128BLL-55HI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 32STSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP I

패키지: 32-LFSOP (0.465", 11.80mm Width)

재고2,944

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

55ns

2.5 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-LFSOP (0.465", 11.80mm Width)

32-sTSOP I

CY7C1347G-250AXCT

Cypress Semiconductor Corp

IC SRAM 4.5MBIT 250MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.6ns
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고5,616

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

250MHz

-

2.6ns

3.15 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

CY62157EV18LL-45BVXI

Cypress Semiconductor Corp

IC SRAM 8MBIT 45NS 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 1.65 V ~ 2.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

패키지: 48-VFBGA

재고7,648

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

45ns

1.65 V ~ 2.25 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

AT25160AN-10SU-2.7

Microchip Technology

IC EEPROM 16KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고312,168

EEPROM

16Kb (2K x 8)

SPI

20MHz

5ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT49F512-70VC

Microchip Technology

IC FLASH 512KBIT 70NS 32VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

패키지: 32-TFSOP (0.488", 12.40mm Width)

재고5,232

FLASH

512Kb (64K x 8)

Parallel

-

50µs

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

AT28C17E-15PI

Microchip Technology

IC EEPROM 16KBIT 150NS 28DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200µs
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

패키지: 28-DIP (0.600", 15.24mm)

재고4,800

EEPROM

16Kb (2K x 8)

Parallel

-

200µs

150ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

AT25020-10PI

Microchip Technology

IC EEPROM 2KBIT 2.1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고5,808

EEPROM

2Kb (256 x 8)

SPI

3MHz

5ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

70T3589S166BF

IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 166MHZ 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 2Mb (64K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.6ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

패키지: 208-LFBGA

재고6,576

SRAM

SRAM - Dual Port, Synchronous

2Mb (64K x 36)

Parallel

166MHz

-

3.6ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

70V3569S4BF

IDT, Integrated Device Technology Inc

IC SRAM 576KBIT 4.2NS 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 576Kb (16K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

패키지: 208-LFBGA

재고2,912

SRAM

SRAM - Dual Port, Synchronous

576Kb (16K x 36)

Parallel

-

4.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

MT29F1T08CMCBBJ4-37ES:B TR

Micron Technology Inc.

IC FLASH 1TBIT 267MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,712

FLASH

FLASH - NAND

1Tb (128G x 8)

Parallel

267MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

CY7C1462KV25-167BZI

Cypress Semiconductor Corp

IC SRAM 36MBIT 167MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

패키지: 165-LBGA

재고5,328

SRAM

SRAM - Synchronous

36Mb (2M x 18)

Parallel

167MHz

-

3.4ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

7133LA25JGI8

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 25NS 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

패키지: 68-LCC (J-Lead)

재고6,720

SRAM

SRAM - Dual Port, Asynchronous

32Kb (2K x 16)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

6116SA45TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 45NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고7,568

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

MT40A1G4RH-075E:B TR

Micron Technology Inc.

IC SDRAM 4GBIT 1.33GHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (1G x 4)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x10.5)

패키지: 78-TFBGA

재고3,792

DRAM

SDRAM - DDR4

4Gb (1G x 4)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9x10.5)

MT48LC4M32B2P-6A AAT:L TR

Micron Technology Inc.

IC SDRAM 128MBIT 166MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

패키지: 86-TFSOP (0.400", 10.16mm Width)

재고5,008

DRAM

SDRAM

128Mb (4M x 32)

Parallel

167MHz

12ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

24AA256T-I/CS16K

Microchip Technology

IC EEPROM 256KBIT 400KHZ 8CSP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFBGA, CSPBGA
Supplier Device Package: 8-CSP

패키지: 8-UFBGA, CSPBGA

재고5,008

EEPROM

256Kb (32K x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFBGA, CSPBGA

8-CSP

MT47H64M4BP-37E:B TR

Micron Technology Inc.

IC SDRAM 256MBIT 266MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 256Mb (64M x 4)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 500ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-FBGA
Supplier Device Package: 60-FBGA (8x12)

패키지: 60-FBGA

재고4,304

DRAM

SDRAM - DDR2

256Mb (64M x 4)

Parallel

267MHz

15ns

500ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-FBGA

60-FBGA (8x12)

IS49NLS93200-25WBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 288M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (32M x 9)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고4,976

DRAM

288Mb (32M x 9)

Parallel

400MHz

-

20ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

S29GL128P90FFSS70

Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고6,336

FLASH

FLASH - NOR

128Mb (16M x 8)

Parallel

-

90ns

2.7 V ~ 3.6 V

0°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

MT53D512M32D2NP-053 WT:D TR

Micron Technology Inc.

IC DRAM 16G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,544

DRAM

SDRAM - Mobile LPDDR4

16Gb (512M x 32)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

93LC56CT-E/MC15KVAO

Microchip Technology

2K 256X8 OR 128X16 SERIAL EE EXT

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x3)

패키지: 8-VFDFN Exposed Pad

재고6,016

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

2MHz

6ms

-

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x3)

GS816218DGD-250I

GSI Technology Inc.

IC SRAM 18MBIT PARALLEL 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, Standard
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 250 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (15x13)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous, Standard

18Mbit

Parallel

250 MHz

-

2.3V ~ 2.7V, 3V ~ 3.6V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (15x13)

GS81284Z36GB-250I

GSI Technology Inc.

IC SRAM 144MBIT PAR 119FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, ZBT
Memory Size: 144Mbit
Memory Interface: Parallel
Clock Frequency: 250 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-FPBGA (22x14)

패키지: -

재고339

SRAM

SRAM - Synchronous, ZBT

144Mbit

Parallel

250 MHz

-

2.3V ~ 2.7V, 3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-FPBGA (22x14)

AS7C316098B-10BIN

Alliance Memory, Inc.

IC SRAM 16MBIT PARALLEL 48TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: -

재고1,440

SRAM

SRAM - Asynchronous

16Mbit

Parallel

-

10ns

10 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-LFBGA

48-TFBGA (6x8)

NDB56PFC-4DIT

Insignis Technology Corporation

DDR2 512MB X16 FBGA 8X12.5(X1.2)

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mbit
Memory Interface: SSTL_18
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

패키지: -

재고627

DRAM

SDRAM - DDR2

512Mbit

SSTL_18

400 MHz

15ns

400 ps

1.7V ~ 1.9V

-40°C ~ 95°C (TC)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

CY62137CVSL-70BAIT

Cypress Semiconductor Corp

IC SRAM 2MBIT PARALLEL 48FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (7x7)

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

2Mbit

Parallel

-

70ns

70 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-FBGA (7x7)

M5M5256DFP-55LL-SM

Renesas Electronics Corporation

STANDARD SRAM, 32KX8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-