페이지 1286 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NAND128W3AABN6F TR	Micron Technology Inc.	IC FLASH 128MBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Mb (16M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50ns Access Time: 50ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고4,816	FLASH	FLASH - NAND	128Mb (16M x 8)	Parallel	-	50ns	50ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
AS4C128M8D3L-12BINTR	Alliance Memory, Inc.	IC SDRAM 1GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	패키지: 78-TFBGA	재고2,656	DRAM	SDRAM - DDR3L	1Gb (128M x 8)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
MTFC16GJUEF-AIT TR	Micron Technology Inc.	IC FLASH 128GBIT 169TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 169-TFBGA Supplier Device Package: 169-TFBGA (14x18)	패키지: 169-TFBGA	재고7,136	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	169-TFBGA	169-TFBGA (14x18)
M95512-RMC6TG	STMicroelectronics	IC EEPROM 512KBIT 5MHZ 8MLP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 16MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-MLP (2x3)	패키지: 8-UFDFN Exposed Pad	재고3,024	EEPROM	EEPROM	512Kb (64K x 8)	SPI	16MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-MLP (2x3)
W25Q80BVSNIG	Winbond Electronics	IC FLASH 8MBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고29,724	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY7C1518KV18-333BZI	Cypress Semiconductor Corp	IC SRAM 72MBIT 333MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고4,240	SRAM	SRAM - Synchronous, DDR II	72Mb (4M x 18)	Parallel	333MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IDT71V3577S80PF8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고2,100	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	-	-	8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
RC28F128P33T85A	Micron Technology Inc.	IC FLASH 128MBIT 85NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (8x10)	패키지: 64-TBGA	재고4,560	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	52MHz	85ns	85ns	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	64-TBGA	64-EasyBGA (8x10)
M29F200BB70N6	Micron Technology Inc.	IC FLASH 2MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mb (256K x 8, 128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고4,816	FLASH	FLASH - NOR	2Mb (256K x 8, 128K x 16)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
DS1225AB-70	Maxim Integrated	IC NVSRAM 64KBIT 70NS 28EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.600", 15.24mm) Supplier Device Package: 28-EDIP	패키지: 28-DIP Module (0.600", 15.24mm)	재고2,768	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	Parallel	-	70ns	70ns	4.75 V ~ 5.25 V	0°C ~ 70°C (TA)	Through Hole	28-DIP Module (0.600", 15.24mm)	28-EDIP
AT27C512R-15RA	Microchip Technology	IC OTP 512KBIT 150NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고3,248	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	150ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
CY7C1041B-15VC	Cypress Semiconductor Corp	IC SRAM 4MBIT 15NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	패키지: 44-BSOJ (0.400", 10.16mm Width)	재고20,508	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
AT27BV040-15VI	Microchip Technology	IC OTP 4MBIT 150NS 32VSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 150ns Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	패키지: 32-TFSOP (0.488", 12.40mm Width)	재고6,432	EPROM	EPROM - OTP	4Mb (512K x 8)	Parallel	-	-	150ns	2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
7164L20YGI8	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 20NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	패키지: 28-BSOJ (0.300", 7.62mm Width)	재고7,744	SRAM	SRAM - Asynchronous	64Kb (8K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
W632GU6KB-15 TR	Winbond Electronics	IC SDRAM 2GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-WBGA (9x13)	패키지: 96-TFBGA	재고2,100	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	667MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-WBGA (9x13)
IS61C1024AL-12TLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 1MBIT 12NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP I	패키지: 32-TFSOP (0.724", 18.40mm Width)	재고110,220	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	12ns	12ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP I
CY7C1347S-133AXC	Cypress Semiconductor Corp	IC SRAM 4.5MBIT 133MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4ns Voltage - Supply: 3.15 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고5,584	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4ns	3.15 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
24LC08BT-I/MNY	Microchip Technology	IC EEPROM 8KBIT 400KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (256 x 8 x 4) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	패키지: 8-WFDFN Exposed Pad	재고4,816	EEPROM	EEPROM	8Kb (256 x 8 x 4)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
BR24L08FJ-WE2	Rohm Semiconductor	IC EEPROM 8KBIT 400KHZ 8SOP-J Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP-J	패키지: 8-SOIC (0.154", 3.90mm Width)	재고25,572	EEPROM	EEPROM	8Kb (1K x 8)	I2C	400kHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP-J
71024S20YGI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 20NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	패키지: 32-BSOJ (0.400", 10.16mm Width)	재고16,476	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
EDB4064B4PB-1DIT-F-D	Micron Technology Inc.	IC DRAM 4G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (64M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,896	DRAM	SDRAM - Mobile LPDDR2	4Gb (64M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	-	-	-
MT53E256M64D4NZ-053 WT:B	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,520	-	-	-	-	-	-	-	-	-	-	-	-
W632GU6NB12I	Winbond Electronics	IC SDRAM 2G DDR3 96WFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (7.5x13)	패키지: 96-VFBGA	재고7,744	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	800MHz	15ns	20ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (7.5x13)
MEM-CF-256U2GB-C	ProLabs	Cisco MEM-CF-256U2GB Compatible Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT55L256V18P1T-10	Micron Technology Inc.	IC SRAM 4MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, ZBT Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous, ZBT	4Mbit	Parallel	100 MHz	-	5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MB85AS8MTPW-G-KBAERE1	Kaga FEI America, Inc.	IC RAM 8MBIT SPI TYPE A 11WLCSP Memory Type: Non-Volatile Memory Format: RAM Technology: ReRAM (Resistive RAM) Memory Size: 8Mbit Memory Interface: SPI Clock Frequency: 10 MHz Write Cycle Time - Word, Page: 10ms Access Time: 35 ns Voltage - Supply: 1.6V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 11-XFBGA, WLBGA Supplier Device Package: 11-WLP (2.07x2.88)	패키지: -	Request a Quote	RAM	ReRAM (Resistive RAM)	8Mbit	SPI	10 MHz	10ms	35 ns	1.6V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	11-XFBGA, WLBGA	11-WLP (2.07x2.88)
MB85RS64VPNF-G-JNE1	Fujitsu Semiconductor Memory Solution	64KBIT FRAM WITH SPI SERIAL INTE Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 64Kbit Memory Interface: SPI Clock Frequency: 20 MHz Write Cycle Time - Word, Page: - Access Time: 20 ns Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	64Kbit	SPI	20 MHz	-	20 ns	3V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MT29F1T08EEHAFJ4-3ITF-A	Micron Technology Inc.	IC FLASH 1TBIT PARALLEL 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	패키지: -	Request a Quote	FLASH	FLASH - NAND	1Tbit	Parallel	333 MHz	-	-	2.5V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	132-VBGA	132-VBGA (12x18)

NAND128W3AABN6F TR

Micron Technology Inc.

IC FLASH 128MBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고4,816

FLASH

FLASH - NAND

128Mb (16M x 8)

Parallel

-

50ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

AS4C128M8D3L-12BINTR

Alliance Memory, Inc.

IC SDRAM 1GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

패키지: 78-TFBGA

재고2,656

DRAM

SDRAM - DDR3L

1Gb (128M x 8)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

MTFC16GJUEF-AIT TR

Micron Technology Inc.

IC FLASH 128GBIT 169TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 169-TFBGA
Supplier Device Package: 169-TFBGA (14x18)

패키지: 169-TFBGA

재고7,136

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

169-TFBGA

169-TFBGA (14x18)

M95512-RMC6TG

STMicroelectronics

IC EEPROM 512KBIT 5MHZ 8MLP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 16MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-MLP (2x3)

패키지: 8-UFDFN Exposed Pad

재고3,024

EEPROM

512Kb (64K x 8)

SPI

16MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-MLP (2x3)

W25Q80BVSNIG

Winbond Electronics

IC FLASH 8MBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고29,724

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY7C1518KV18-333BZI

Cypress Semiconductor Corp

IC SRAM 72MBIT 333MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고4,240

SRAM

SRAM - Synchronous, DDR II

72Mb (4M x 18)

Parallel

333MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IDT71V3577S80PF8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고2,100

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

-

8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

RC28F128P33T85A

Micron Technology Inc.

IC FLASH 128MBIT 85NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (8x10)

패키지: 64-TBGA

재고4,560

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

52MHz

85ns

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

64-TBGA

64-EasyBGA (8x10)

M29F200BB70N6

Micron Technology Inc.

IC FLASH 2MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8, 128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고4,816

FLASH

FLASH - NOR

2Mb (256K x 8, 128K x 16)

Parallel

-

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

DS1225AB-70

Maxim Integrated

IC NVSRAM 64KBIT 70NS 28EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP

패키지: 28-DIP Module (0.600", 15.24mm)

재고2,768

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

Parallel

-

70ns

4.75 V ~ 5.25 V

0°C ~ 70°C (TA)

Through Hole

28-DIP Module (0.600", 15.24mm)

28-EDIP

AT27C512R-15RA

Microchip Technology

IC OTP 512KBIT 150NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고3,248

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

150ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

CY7C1041B-15VC

Cypress Semiconductor Corp

IC SRAM 4MBIT 15NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

패키지: 44-BSOJ (0.400", 10.16mm Width)

재고20,508

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

AT27BV040-15VI

Microchip Technology

IC OTP 4MBIT 150NS 32VSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 150ns
Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

패키지: 32-TFSOP (0.488", 12.40mm Width)

재고6,432

EPROM

EPROM - OTP

4Mb (512K x 8)

Parallel

-

150ns

2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

7164L20YGI8

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

패키지: 28-BSOJ (0.300", 7.62mm Width)

재고7,744

SRAM

SRAM - Asynchronous

64Kb (8K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

W632GU6KB-15 TR

Winbond Electronics

IC SDRAM 2GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-WBGA (9x13)

패키지: 96-TFBGA

재고2,100

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

667MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-WBGA (9x13)

IS61C1024AL-12TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I

패키지: 32-TFSOP (0.724", 18.40mm Width)

재고110,220

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

12ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP I

CY7C1347S-133AXC

Cypress Semiconductor Corp

IC SRAM 4.5MBIT 133MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4ns
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고5,584

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4ns

3.15 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

24LC08BT-I/MNY

Microchip Technology

IC EEPROM 8KBIT 400KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (256 x 8 x 4)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

패키지: 8-WFDFN Exposed Pad

재고4,816

EEPROM

8Kb (256 x 8 x 4)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

BR24L08FJ-WE2

Rohm Semiconductor

IC EEPROM 8KBIT 400KHZ 8SOP-J

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP-J

패키지: 8-SOIC (0.154", 3.90mm Width)

재고25,572

EEPROM

8Kb (1K x 8)

I2C

400kHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP-J

71024S20YGI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

패키지: 32-BSOJ (0.400", 10.16mm Width)

재고16,476

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

EDB4064B4PB-1DIT-F-D

Micron Technology Inc.

IC DRAM 4G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (64M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,896

DRAM

SDRAM - Mobile LPDDR2

4Gb (64M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

-

MT53E256M64D4NZ-053 WT:B

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,520

-

W632GU6NB12I

Winbond Electronics

IC SDRAM 2G DDR3 96WFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)

패키지: 96-VFBGA

재고7,744

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

800MHz

15ns

20ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (7.5x13)

MEM-CF-256U2GB-C

ProLabs

Cisco MEM-CF-256U2GB Compatible

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT55L256V18P1T-10

Micron Technology Inc.

IC SRAM 4MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, ZBT
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous, ZBT

4Mbit

Parallel

100 MHz

-

5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MB85AS8MTPW-G-KBAERE1

Kaga FEI America, Inc.

IC RAM 8MBIT SPI TYPE A 11WLCSP

Memory Type: Non-Volatile
Memory Format: RAM
Technology: ReRAM (Resistive RAM)
Memory Size: 8Mbit
Memory Interface: SPI
Clock Frequency: 10 MHz
Write Cycle Time - Word, Page: 10ms
Access Time: 35 ns
Voltage - Supply: 1.6V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 11-XFBGA, WLBGA
Supplier Device Package: 11-WLP (2.07x2.88)

패키지: -

Request a Quote

RAM

ReRAM (Resistive RAM)

8Mbit

SPI

10 MHz

10ms

35 ns

1.6V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

11-XFBGA, WLBGA

11-WLP (2.07x2.88)

MB85RS64VPNF-G-JNE1

Fujitsu Semiconductor Memory Solution

64KBIT FRAM WITH SPI SERIAL INTE

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 64Kbit
Memory Interface: SPI
Clock Frequency: 20 MHz
Write Cycle Time - Word, Page: -
Access Time: 20 ns
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

64Kbit

SPI

20 MHz

-

20 ns

3V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MT29F1T08EEHAFJ4-3ITF-A

Micron Technology Inc.

IC FLASH 1TBIT PARALLEL 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

패키지: -

Request a Quote

FLASH

FLASH - NAND

1Tbit

Parallel

333 MHz

-

2.5V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

132-VBGA

132-VBGA (12x18)