페이지 1415 - 메모리 | 집적 회로(IC) | Heisener Electronics
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메모리

기록 62,144
페이지  1,415/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IS45S16100E-7TLA1
ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 50TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 50-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 50-TSOP II
패키지: 50-TSOP (0.400", 10.16mm Width)
재고359,880
DRAM
SDRAM
16Mb (1M x 16)
Parallel
143MHz
-
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
50-TSOP (0.400", 10.16mm Width)
50-TSOP II
IS42S16160D-75ETLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고2,448
DRAM
SDRAM
256Mb (16M x 16)
Parallel
133MHz
-
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
hot AT26DF321-SU
Adesto Technologies

IC FLASH 32MBIT 66MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (256 Bytes x 16384 pages)
  • Memory Interface: SPI
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: 6µs, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.209", 5.30mm Width)
재고127,920
FLASH
FLASH
32Mb (256 Bytes x 16384 pages)
SPI
66MHz
6µs, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
CAT28C256H1315
ON Semiconductor

IC EEPROM 256KBIT 150NS 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
패키지: 28-TSSOP (0.465", 11.80mm Width)
재고5,424
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
5ms
150ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
hot M29F040B90N1
Micron Technology Inc.

IC FLASH 4MBIT 90NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP (8x20)
패키지: 32-TFSOP (0.724", 18.40mm Width)
재고6,108
FLASH
FLASH - NOR
4Mb (512K x 8)
Parallel
-
90ns
90ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP (8x20)
IS41LV16105B-50KLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 42SOJ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM - FP
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 42-BSOJ (0.400", 10.16mm)
  • Supplier Device Package: 42-SOJ
패키지: 42-BSOJ (0.400", 10.16mm)
재고5,440
DRAM
DRAM - FP
16Mb (1M x 16)
Parallel
-
-
25ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
42-BSOJ (0.400", 10.16mm)
42-SOJ
CY7C0851V-133AXC
Cypress Semiconductor Corp

IC SRAM 2MBIT 133MHZ 176TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 2Mb (64K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 176-LQFP
  • Supplier Device Package: 176-TQFP (24x24)
패키지: 176-LQFP
재고7,104
SRAM
SRAM - Dual Port, Synchronous
2Mb (64K x 36)
Parallel
133MHz
-
-
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
176-LQFP
176-TQFP (24x24)
AT29LV256-20TI
Microchip Technology

IC FLASH 256KBIT 200NS 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ms
  • Access Time: 200ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
패키지: 28-TSSOP (0.465", 11.80mm Width)
재고2,992
FLASH
FLASH
256Kb (32K x 8)
Parallel
-
20ms
200ns
3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
70T3519S133DRI
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 208QFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-BFQFP
  • Supplier Device Package: 208-PQFP (28x28)
패키지: 208-BFQFP
재고6,992
SRAM
SRAM - Dual Port, Synchronous
9Mb (256K x 36)
Parallel
133MHz
-
4.2ns
2.4 V ~ 2.6 V
-40°C ~ 85°C (TA)
Surface Mount
208-BFQFP
208-PQFP (28x28)
AT28C256E-25LM/883-815
Microchip Technology

IC EEPROM 256KBIT 250NS 32CLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 250ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,424
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
250ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
-
-
-
MTFC16GLWDM-4M AIT Z TR
Micron Technology Inc.

IC FLASH 128GBIT 153TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,200
FLASH
FLASH - NAND
128Gb (16G x 8)
MMC
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
70V06S55PF8
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: 64-LQFP
재고2,096
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
55ns
55ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
IS42S86400D-6TL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고5,360
DRAM
SDRAM
512Mb (64M x 8)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MTFC8GAKAJCN-1M WT TR
Micron Technology Inc.

IC FLASH 64GBIT 153VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,064
FLASH
FLASH - NAND
64Gb (8G x 8)
MMC
-
-
-
2.7 V ~ 3.6 V
-25°C ~ 85°C (TA)
-
-
-
CY7C1361C-100AXCT
Cypress Semiconductor Corp

IC SRAM 9MBIT 100MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고3,840
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
100MHz
-
8.5ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
24LC16BHT-E/MNY
Microchip Technology

IC EEPROM 16KBIT 400KHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
패키지: 8-WFDFN Exposed Pad
재고6,688
EEPROM
EEPROM
16Kb (2K x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
hot 24AA256-I/SM
Microchip Technology

IC EEPROM 256KBIT 400KHZ 8SOIJ

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIJ
패키지: 8-SOIC (0.209", 5.30mm Width)
재고7,056
EEPROM
EEPROM
256Kb (32K x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIJ
BR24S256FJ-WE2
Rohm Semiconductor

IC EEPROM 256KBIT 400KHZ 8SOP-J

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,808
EEPROM
EEPROM
256Kb (32K x 8)
I2C
400kHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
FT24C64A-ESG-T
Fremont Micro Devices Ltd

IC EEPROM 64KBIT I2C 1MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 500 ns
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
EEPROM
EEPROM
64Kbit
I2C
1 MHz
5ms
500 ns
1.8V ~ 5.5V
-40°C ~ 85°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
24CW160T-E-Q4B66KVAO
Microchip Technology

IC EEPROM 16KBIT I2C 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450 ns
  • Voltage - Supply: 1.6V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
패키지: -
Request a Quote
EEPROM
EEPROM
16Kbit
I2C
1 MHz
5ms
450 ns
1.6V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
71V67603ZS133PF
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 9Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: -
Request a Quote
SRAM
SRAM - Synchronous, SDR
9Mbit
Parallel
133 MHz
-
4.2 ns
3.135V ~ 3.465V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
S25HL01GTDPBHI033
Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (8x8)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
1Gbit
SPI - Quad I/O, QPI
133 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-VBGA
24-FBGA (8x8)
CG10146AFT
Infineon Technologies

IC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
94-4103PBF
Infineon Technologies

MOSFET

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
BR24H08FVT-5ACE2
Rohm Semiconductor

8KBIT, IC BUS, HIGH SPEED WRITE

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 3.5ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP-B
패키지: -
재고9,000
EEPROM
EEPROM
8Kbit
I2C
1 MHz
3.5ms
-
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP-B
S29GL064S90FHI013
Infineon Technologies

IC FLASH 64MBIT PARALLEL 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 90 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
패키지: -
Request a Quote
FLASH
FLASH - NOR
64Mbit
Parallel
-
60ns
90 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
MT25QL256BBB8ESF-CSIT
Micron Technology Inc.

IC FLASH 128MBIT SPI/QUAD 16SOP2

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 1.8ms
  • Access Time: 5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP2
패키지: -
Request a Quote
FLASH
FLASH - NOR
128Mbit
SPI - Quad I/O
133 MHz
1.8ms
5 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP2
24C01-P
Microchip Technology

IC EEPROM 1KBIT I2C 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kbit
  • Memory Interface: I2C
  • Clock Frequency: 400 kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 900 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
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EEPROM
EEPROM
1Kbit
I2C
400 kHz
10ms
900 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP