페이지 1417 - 메모리 | 집적 회로(IC) | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559 x831
Language Translation

* Please refer to the English Version as our Official Version.

메모리

기록 62,144
페이지  1,417/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS29GL128S-10TFV020
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 100ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,704
FLASH
FLASH - NOR
128Mb (16M x 8)
Parallel
-
60ns
100ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
IS43LR16400B-6BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (8x10)
패키지: 60-TFBGA
재고3,344
DRAM
SDRAM - Mobile DDR
64Mb (4M x 16)
Parallel
166MHz
15ns
5.5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (8x10)
CY7C1470BV33-200BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 200MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
패키지: 165-LBGA
재고4,128
SRAM
SRAM - Synchronous
72Mb (2M x 36)
Parallel
200MHz
-
3ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
IS45S32400B-6TLA1-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
패키지: 86-TFSOP (0.400", 10.16mm Width)
재고5,744
DRAM
SDRAM
128Mb (4M x 32)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
MT45W256KW16BEGB-708 WT TR
Micron Technology Inc.

IC PSRAM 4MBIT 70NS 54VFBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (6x8)
패키지: 54-VFBGA
재고4,640
PSRAM
PSRAM (Pseudo SRAM)
4Mb (256K x 16)
Parallel
-
70ns
70ns
1.7 V ~ 1.95 V
-30°C ~ 85°C (TC)
Surface Mount
54-VFBGA
54-VFBGA (6x8)
hot W25X16VSFIG
Winbond Electronics

IC FLASH 16MBIT 75MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.295", 7.50mm Width)
재고6,336
FLASH
FLASH
16Mb (2M x 8)
SPI
75MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
hot MT48LC2M32B2P-6 IT:G
Micron Technology Inc.

IC SDRAM 64MBIT 167MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
패키지: 86-TFSOP (0.400", 10.16mm Width)
재고16,812
DRAM
SDRAM
64Mb (2M x 32)
Parallel
167MHz
12ns
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
AT24C512-10TU-2.7-T
Microchip Technology

IC EEPROM 512KBIT 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 550ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고4,496
EEPROM
EEPROM
512Kb (64K x 8)
I2C
1MHz
10ms
550ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot M24C02-WDW6T
STMicroelectronics

IC EEPROM 2KBIT 400KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고113,988
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
AT29BV010A-12JI
Microchip Technology

IC FLASH 1MBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ms
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고5,488
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
20ms
120ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT49F001N-70TI
Microchip Technology

IC FLASH 1MBIT 70NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
패키지: 32-TFSOP (0.724", 18.40mm Width)
재고6,416
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
AT24C04A-10PI-2.5
Microchip Technology

IC EEPROM 4KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고3,040
EEPROM
EEPROM
4Kb (512 x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
IS61QDPB21M36A-333M3L
ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 333MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QUADP
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.4ns
  • Voltage - Supply: 1.71 V ~ 1.89 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-LFBGA (15x17)
패키지: 165-LBGA
재고3,472
SRAM
SRAM - Synchronous, QUADP
36Mb (1M x 36)
Parallel
333MHz
-
8.4ns
1.71 V ~ 1.89 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-LFBGA (15x17)
7016L35J
IDT, Integrated Device Technology Inc

IC SRAM 144KBIT 35NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 144Kb (16K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
패키지: 68-LCC (J-Lead)
재고2,288
SRAM
SRAM - Dual Port, Asynchronous
144Kb (16K x 9)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
MT52L256M32D1PD-107 WT:B TR
Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 8Gb (256M x 32)
  • Memory Interface: -
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,080
DRAM
SDRAM - Mobile LPDDR3
8Gb (256M x 32)
-
933MHz
-
-
1.2V
-30°C ~ 85°C (TC)
-
-
-
CY7S1041G30-10VXIT
Cypress Semiconductor Corp

ASYNC SRAMS

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,368
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
IS61LF12836EC-7.5TQLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 7.5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
패키지: 100-LQFP
재고4,016
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
117MHz
-
7.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
SST39VF3202-70-4I-B3KE
Microchip Technology

IC FLASH 32MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
패키지: 48-TFBGA
재고8,784
FLASH
FLASH
32Mb (2M x 16)
Parallel
-
10µs
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
hot 24AA08T-I/SN
Microchip Technology

IC EEPROM 8KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (256 x 8 x 4)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고15,564
EEPROM
EEPROM
8Kb (256 x 8 x 4)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S29GL256P11TAIV20
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
패키지: 56-TFSOP (0.724", 18.40mm Width)
재고3,568
FLASH
FLASH - NOR
256Mb (32M x 8)
Parallel
-
110ns
110ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
S25FL128LAGNFV013
Cypress Semiconductor Corp

IC NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (5x6)
패키지: 8-WDFN Exposed Pad
재고7,184
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O, QPI
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (5x6)
71342SA55PFI8
IDT, Integrated Device Technology Inc

IC SRAM 32K PARALLEL 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: 64-LQFP
재고5,472
SRAM
SRAM - Dual Port, Asynchronous
32Kb (4K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
CG8204AA
Cypress Semiconductor Corp

MEMORY SRAM ASYNC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,560
-
-
-
-
-
-
-
-
-
-
-
-
MT58L512Y36PF-10
Micron Technology Inc.

IC SRAM 18MBIT PAR 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5 ns
  • Voltage - Supply: 3.135V ~ 3.465V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: -
Request a Quote
SRAM
SRAM
18Mbit
Parallel
100 MHz
-
5 ns
3.135V ~ 3.465V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-FBGA (13x15)
BR24H128F-5ACE2
Rohm Semiconductor

IC EEPROM 128KBIT I2C 1MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 3.5ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
재고795
EEPROM
EEPROM
128Kbit
I2C
1 MHz
3.5ms
-
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
CAT93C56V
onsemi

IC EEPROM 2KBIT MICROWIRE 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 2 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 250 ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
EEPROM
EEPROM
2Kbit
Microwire
2 MHz
-
250 ns
2.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT25FF161A-MMUN-T
Renesas Electronics Corporation

IC FLASH 16MBIT SPI/QUAD 8WDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 50µs, 7ms
  • Access Time: 8 ns
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WDFN (5x6)
패키지: -
재고13,626
FLASH
FLASH - NOR
16Mbit
SPI - Quad I/O
133 MHz
50µs, 7ms
8 ns
1.65V ~ 3.6V
-40°C ~ 85°C (TC)
Surface Mount
8-WDFN Exposed Pad
8-WDFN (5x6)
CAT25C128XI-T2
onsemi

CAT25C128 - 128-KBit SPI Serial

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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