페이지 154 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS25LQ010A-JNLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 8MBIT 80MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Mb (128K x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: 400µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,232	FLASH	FLASH - NOR	1Mb (128K x 8)	SPI - Quad I/O	80MHz	400µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY7C10612DV33-10ZSXI	Cypress Semiconductor Corp	IC SRAM 16MBIT 10NS 54TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고2,640	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IDT71V3559SA85BQGI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8.5NS 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고7,168	SRAM	SRAM - Synchronous ZBT	4.5Mb (256K x 18)	Parallel	-	-	8.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
CY7C1460AV25-250AXCT	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.6ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고3,712	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	250MHz	-	2.6ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
AT24C02B-TH-T	Microchip Technology	IC EEPROM 2KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고25,476	EEPROM	EEPROM	2Kb (256 x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AT93C56-10PI-2.5	Microchip Technology	IC EEPROM 2KBIT 2MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고2,080	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	2MHz	10ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AT27C4096-90JI	Microchip Technology	IC OTP 4MBIT 90NS 44PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 44-LCC (J-Lead) Supplier Device Package: 44-PLCC (16.59x16.59)	패키지: 44-LCC (J-Lead)	재고5,232	EPROM	EPROM - OTP	4Mb (256K x 16)	Parallel	-	-	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	44-LCC (J-Lead)	44-PLCC (16.59x16.59)
AT27C020-70TC	Microchip Technology	IC OTP 2MBIT 70NS 32TSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	패키지: 32-TFSOP (0.724", 18.40mm Width)	재고2,048	EPROM	EPROM - OTP	2Mb (256K x 8)	Parallel	-	-	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
AT28HC256F-90TC	Microchip Technology	IC EEPROM 256KBIT 90NS 28TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 3ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	패키지: 28-TSSOP (0.465", 11.80mm Width)	재고3,008	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	3ms	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
7026L20JI8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 20NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	패키지: 84-LCC (J-Lead)	재고2,912	SRAM	SRAM - Dual Port, Asynchronous	256Kb (16K x 16)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
CY7C1061G-10BV1XIT	Cypress Semiconductor Corp	IC SRAM 16MBIT 10NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	패키지: 48-VFBGA	재고7,856	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
MX25L12835FZ2I-10G	Macronix	IC FLASH 128MBIT 104MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 30µs, 1.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	패키지: 8-WDFN Exposed Pad	재고13,932	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	104MHz	30µs, 1.5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
SST26VF016BT-104V/SN	Microchip Technology	IC FLASH 16MBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,032	FLASH	FLASH	16Mb (2M x 8)	SPI - Quad I/O	104MHz	1.5ms	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24C02CT-I/SN	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 1ms Access Time: 900ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고10,164	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	1ms	900ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT48LC16M16A2P-6A:G	Micron Technology Inc.	IC SDRAM 256MBIT 167MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고20,376	DRAM	SDRAM	256Mb (16M x 16)	Parallel	167MHz	12ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
AT25640B-XHL-T	Microchip Technology	IC EEPROM 64KBIT 20MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고3,984	EEPROM	EEPROM	64Kb (8K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
7130LA100PDG	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 100NS 48DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-PDIP	패키지: 48-DIP (0.600", 15.24mm)	재고6,432	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	100ns	100ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-PDIP
MT48LC4M32B2TG-6A:L	Alliance Memory, Inc.	IC SDRAM 128MBIT 167MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	패키지: 86-TFSOP (0.400", 10.16mm Width)	재고26,400	DRAM	SDRAM	128Mb (4M x 32)	Parallel	167MHz	12ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
24AA256SC-I/W16K	Microchip Technology	IC EEPROM 256K I2C 400KHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고5,088	EEPROM	EEPROM	256Kb (32K x 8)	I²C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
IS25WP080D-JKLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 8M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: 8-WDFN Exposed Pad	재고13,620	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
S25FS256SDSBHM200	Cypress Semiconductor Corp	IC NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	패키지: 24-TBGA	재고5,232	-	-	-	-	-	-	-	-	-	Surface Mount	24-TBGA	24-BGA (8x6)
MB85RS64TUPN-G-AMEWE1	Fujitsu Electronics America, Inc.	64KBIT FRAM WITH SPI 1.8-3.6V Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,200	-	-	-	-	-	-	-	-	-	-	-	-
MT61K256M32JE-12:A	Micron Technology Inc.	IC RAM 8G PARALLEL 1.5GHZ FBGA Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR6 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 1.5GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.31 V ~ 1.39 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 180-TFBGA Supplier Device Package: -	패키지: 180-TFBGA	재고4,528	RAM	SGRAM - GDDR6	8Gb (256M x 32)	Parallel	1.5GHz	-	-	1.31 V ~ 1.39 V	0°C ~ 95°C (TC)	Surface Mount	180-TFBGA	-
MT53D1024M32D4DT-046 AUT:D	Micron Technology Inc.	IC DRAM 32G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,504	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	2133MHz	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
MT53B128M32D1DS-062 AIT:A	Micron Technology Inc.	IC DRAM 4G 1600MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gb (128M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: -	패키지: 200-WFBGA	재고13,968	DRAM	SDRAM - Mobile LPDDR4	4Gb (128M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 85°C (TA)	Surface Mount	200-WFBGA	-
MX30LF1G28AD-TI	Macronix	IC FLASH 1GBIT PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	1Gbit	Parallel	-	20ns	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
IS43LQ32128AL-062TBLI-TR	ISSI, Integrated Silicon Solution Inc	4G, 0.57-0.65V/1.06-1.17/1.70-1. Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 4Gbit Memory Interface: LVSTL Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	4Gbit	LVSTL	1.6 GHz	-	-	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
S29GL512N10TFI010	Infineon Technologies	IC FLASH 512MBIT PARALLEL 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: -	Request a Quote	FLASH	FLASH - NOR	512Mbit	Parallel	-	100ns	100 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP

IS25LQ010A-JNLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 8MBIT 80MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 400µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,232

FLASH

FLASH - NOR

1Mb (128K x 8)

SPI - Quad I/O

80MHz

400µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY7C10612DV33-10ZSXI

Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 54TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고2,640

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IDT71V3559SA85BQGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고7,168

SRAM

SRAM - Synchronous ZBT

4.5Mb (256K x 18)

Parallel

-

8.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

CY7C1460AV25-250AXCT

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.6ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고3,712

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

250MHz

-

2.6ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

AT24C02B-TH-T

Microchip Technology

IC EEPROM 2KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고25,476

EEPROM

2Kb (256 x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AT93C56-10PI-2.5

Microchip Technology

IC EEPROM 2KBIT 2MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고2,080

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

2MHz

10ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AT27C4096-90JI

Microchip Technology

IC OTP 4MBIT 90NS 44PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Supplier Device Package: 44-PLCC (16.59x16.59)

패키지: 44-LCC (J-Lead)

재고5,232

EPROM

EPROM - OTP

4Mb (256K x 16)

Parallel

-

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

44-LCC (J-Lead)

44-PLCC (16.59x16.59)

AT27C020-70TC

Microchip Technology

IC OTP 2MBIT 70NS 32TSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

패키지: 32-TFSOP (0.724", 18.40mm Width)

재고2,048

EPROM

EPROM - OTP

2Mb (256K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

AT28HC256F-90TC

Microchip Technology

IC EEPROM 256KBIT 90NS 28TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 3ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

패키지: 28-TSSOP (0.465", 11.80mm Width)

재고3,008

EEPROM

256Kb (32K x 8)

Parallel

-

3ms

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

7026L20JI8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 20NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

패키지: 84-LCC (J-Lead)

재고2,912

SRAM

SRAM - Dual Port, Asynchronous

256Kb (16K x 16)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

CY7C1061G-10BV1XIT

Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

패키지: 48-VFBGA

재고7,856

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

MX25L12835FZ2I-10G

Macronix

IC FLASH 128MBIT 104MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 30µs, 1.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

패키지: 8-WDFN Exposed Pad

재고13,932

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

104MHz

30µs, 1.5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

SST26VF016BT-104V/SN

Microchip Technology

IC FLASH 16MBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,032

FLASH

16Mb (2M x 8)

SPI - Quad I/O

104MHz

1.5ms

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24C02CT-I/SN

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 1ms
Access Time: 900ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고10,164

EEPROM

2Kb (256 x 8)

I2C

400kHz

1ms

900ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT48LC16M16A2P-6A:G

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고20,376

DRAM

SDRAM

256Mb (16M x 16)

Parallel

167MHz

12ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

AT25640B-XHL-T

Microchip Technology

IC EEPROM 64KBIT 20MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고3,984

EEPROM

64Kb (8K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

7130LA100PDG

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 100NS 48DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-PDIP

패키지: 48-DIP (0.600", 15.24mm)

재고6,432

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

100ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-PDIP

MT48LC4M32B2TG-6A:L

Alliance Memory, Inc.

IC SDRAM 128MBIT 167MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

패키지: 86-TFSOP (0.400", 10.16mm Width)

재고26,400

DRAM

SDRAM

128Mb (4M x 32)

Parallel

167MHz

12ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

24AA256SC-I/W16K

Microchip Technology

IC EEPROM 256K I2C 400KHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고5,088

EEPROM

256Kb (32K x 8)

I²C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

IS25WP080D-JKLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 8M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: 8-WDFN Exposed Pad

재고13,620

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

S25FS256SDSBHM200

Cypress Semiconductor Corp

IC NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

패키지: 24-TBGA

재고5,232

-

Surface Mount

24-TBGA

24-BGA (8x6)

MB85RS64TUPN-G-AMEWE1

Fujitsu Electronics America, Inc.

64KBIT FRAM WITH SPI 1.8-3.6V

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,200

-

MT61K256M32JE-12:A

Micron Technology Inc.

IC RAM 8G PARALLEL 1.5GHZ FBGA

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR6
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 1.5GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.31 V ~ 1.39 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 180-TFBGA
Supplier Device Package: -

패키지: 180-TFBGA

재고4,528

RAM

SGRAM - GDDR6

8Gb (256M x 32)

Parallel

1.5GHz

-

1.31 V ~ 1.39 V

0°C ~ 95°C (TC)

Surface Mount

180-TFBGA

-

MT53D1024M32D4DT-046 AUT:D

Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,504

DRAM

SDRAM - Mobile LPDDR4

32Gb (1G x 32)

-

2133MHz

-

1.1V

-40°C ~ 125°C (TC)

-

MT53B128M32D1DS-062 AIT:A

Micron Technology Inc.

IC DRAM 4G 1600MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gb (128M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: -

패키지: 200-WFBGA

재고13,968

DRAM

SDRAM - Mobile LPDDR4

4Gb (128M x 32)

-

1600MHz

-

1.1V

-40°C ~ 85°C (TA)

Surface Mount

200-WFBGA

-

MX30LF1G28AD-TI

Macronix

IC FLASH 1GBIT PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

1Gbit

Parallel

-

20ns

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

IS43LQ32128AL-062TBLI-TR

ISSI, Integrated Silicon Solution Inc

4G, 0.57-0.65V/1.06-1.17/1.70-1.

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 4Gbit
Memory Interface: LVSTL
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

4Gbit

LVSTL

1.6 GHz

-

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

S29GL512N10TFI010

Infineon Technologies

IC FLASH 512MBIT PARALLEL 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: -

Request a Quote

FLASH

FLASH - NOR

512Mbit

Parallel

-

100ns

100 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP