페이지 155 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
N25Q064A13EF640FN02 TR
Micron Technology Inc.

IC FLASH SER NOR SLC 16MX4 VDFPN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (16M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,008
FLASH
FLASH - NOR
64Mb (16M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
CY7C131E-55JXIT
Cypress Semiconductor Corp

IC SRAM 8KBIT 55NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
패키지: 52-LCC (J-Lead)
재고5,664
SRAM
SRAM - Dual Port, Asynchronous
8Kb (1K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
MTFC16GJTEC-IT TR
Micron Technology Inc.

IC FLASH 128GBIT 169WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,128
FLASH
FLASH - NAND
128Gb (16G x 8)
MMC
-
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
-
-
IDT71V256SA12PZI8
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 12NS 28TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
패키지: 28-TSSOP (0.465", 11.80mm Width)
재고6,112
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
IS42S81600E-6TLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고5,680
DRAM
SDRAM
128Mb (16M x 8)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
M59DR032EA10ZB6T
STMicroelectronics

IC FLASH 32MBIT 100NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 1.65 V ~ 2.2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA
  • Supplier Device Package: 48-TFBGA (7x12)
패키지: 48-LFBGA
재고2,960
FLASH
FLASH - NOR
32Mb (2M x 16)
Parallel
-
100ns
100ns
1.65 V ~ 2.2 V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA
48-TFBGA (7x12)
CY62136VNLL-70ZSXAT
Cypress Semiconductor Corp

IC SRAM 2MBIT 70NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고4,784
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
LHF00L31
Sharp Microelectronics

IC FLASH 16MBIT 70NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고5,056
FLASH
FLASH
16Mb (1M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
AT93C66-10SI-1.8
Microchip Technology

IC EEPROM 4KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8, 256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,928
EEPROM
EEPROM
4Kb (512 x 8, 256 x 16)
SPI
2MHz
10ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT49BV512-90TC
Microchip Technology

IC FLASH 512KBIT 90NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 30µs
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
패키지: 32-TFSOP (0.724", 18.40mm Width)
재고7,056
FLASH
FLASH
512Kb (64K x 8)
Parallel
-
30µs
90ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
CY7C1165KV18-550BZXC
Cypress Semiconductor Corp

IC SRAM 18MBIT 550MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 550MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: 165-LBGA
재고4,752
SRAM
SRAM - Synchronous, QDR II+
18Mb (512K x 36)
Parallel
550MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
IS46TR16128CL-15HBLA2
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: 96-TFBGA
재고4,752
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
667MHz
15ns
20ns
1.283 V ~ 1.45 V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
93LC56B-E/MS
Microchip Technology

IC EEPROM 2KBIT 2MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고2,624
EEPROM
EEPROM
2Kb (128 x 16)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
BR25G640F-3GE2
Rohm Semiconductor

IC EEPROM 64KBIT 20MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.173", 4.40mm Width)
재고2,368
EEPROM
EEPROM
64Kb (8K x 8)
SPI
20MHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
S29AL016J70TFN013
Cypress Semiconductor Corp

IC FLASH 16M PARALLEL 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8, 1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고4,448
FLASH
FLASH - NOR
16Mb (2M x 8, 1M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
BR93G86FV-3AGTE2
Rohm Semiconductor

MICROWIRE BUS 16KBIT(1024X16BIT)

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (1K x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SSOPB
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고3,072
EEPROM
EEPROM
16Kb (1K x 16)
SPI
3MHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-SSOPB
S29PL032J55BAI120
Cypress Semiconductor Corp

IC FLASH MEM NOR 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-FBGA (8.15x6.15)
패키지: 48-VFBGA
재고7,104
FLASH
FLASH - NOR
32Mb (2M x 16)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C
Surface Mount
48-VFBGA
48-FBGA (8.15x6.15)
MT29F256G08EBHBFB16C3WC1-FES
Micron Technology Inc.

IC FLASH 256G PARALLEL

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,784
-
-
-
-
-
-
-
-
-
-
-
-
W25Q32JVXGIM-TR
Winbond Electronics

IC FLASH 32MBIT SPI/QUAD 8XSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XDFN Exposed Pad
  • Supplier Device Package: 8-XSON (4x4)
패키지: -
Request a Quote
FLASH
FLASH - NOR
32Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
3ms
6 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-XDFN Exposed Pad
8-XSON (4x4)
S29AL008J70BFIC20E
Infineon Technologies

IC FLASH NOR 48FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
S-24C64CH-J8T2U3
ABLIC Inc.

LINEAR IC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kbit
  • Memory Interface: I2C
  • Clock Frequency: 400 kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900 ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP-J
패키지: -
Request a Quote
EEPROM
EEPROM
64Kbit
I2C
400 kHz
5ms
900 ns
2.5V ~ 5.5V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP-J
5962-9089909MYA
Intel

IC FLASH 1MBIT PARALLEL 32CLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-CLCC
  • Supplier Device Package: 32-CLCC
패키지: -
Request a Quote
FLASH
FLASH
1Mbit
Parallel
-
-
90 ns
4.5V ~ 5.5V
-55°C ~ 125°C (TC)
Surface Mount
32-CLCC
32-CLCC
R1EX25512ASA00A-S0
Renesas Electronics Corporation

EEPROM, 64KX8, SERIAL

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
GS81314LQ36GK-133I
GSI Technology Inc.

IC SRAM 144MBIT PAR 260BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Synchronous
  • Memory Size: 144Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.333 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V ~ 1.35V
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 260-BGA
  • Supplier Device Package: 260-BGA (22x14)
패키지: -
Request a Quote
SRAM
SRAM - Quad Port, Synchronous
144Mbit
Parallel
1.333 GHz
-
-
1.2V ~ 1.35V
-40°C ~ 100°C (TJ)
Surface Mount
260-BGA
260-BGA (22x14)
W978H6KBVX1E
Winbond Electronics

IC DRAM 256MBIT HSUL 12 134VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4B
  • Memory Size: 256Mbit
  • Memory Interface: HSUL_12
  • Clock Frequency: 533 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-VFBGA
  • Supplier Device Package: 134-VFBGA (10x11.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR2-S4B
256Mbit
HSUL_12
533 MHz
15ns
5.5 ns
1.14V ~ 1.3V, 1.7V ~ 1.95V
-25°C ~ 85°C (TC)
Surface Mount
134-VFBGA
134-VFBGA (10x11.5)
70824S20PFI8
Renesas Electronics Corporation

IC RAM

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: 40 MHz
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-TQFP (14x14)
패키지: -
Request a Quote
SRAM
SRAM
64Kbit
Parallel
40 MHz
20ns
20 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
80-LQFP
80-TQFP (14x14)
IS43TR16256ECL-125LB2LI-TR
ISSI, Integrated Silicon Solution Inc

4G, 1.35V, DDR3L w/ ECC,256Mx16,

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 96-BGA
  • Supplier Device Package: 96-BGA
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
4Gbit
Parallel
800 MHz
-
-
-
-40°C ~ 85°C
Surface Mount
96-BGA
96-BGA
W66AP6NBHAFJ-TR
Winbond Electronics

1GB LPDDR4, X16, 1600MHZ, -40C~1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 1Gbit
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.6 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 100-VFBGA
  • Supplier Device Package: 100-VFBGA (10x7.5)
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DRAM
SDRAM - Mobile LPDDR4
1Gbit
LVSTL_11
1.6 GHz
18ns
3.6 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
100-VFBGA
100-VFBGA (10x7.5)