페이지 2083 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
315-1345-000 AAA	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,384	-	-	-	-	-	-	-	-	-	-	-	-
IS42SM32400G-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고6,512	DRAM	SDRAM - Mobile	128Mb (4M x 32)	Parallel	166MHz	-	5.5ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
DS25LV02R+T&R	Maxim Integrated	IC OTP 1KBIT 1WIRE SOT23-5 Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Kb (1K x 1) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 15µs Voltage - Supply: 2.2 V ~ 5.5 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-23-5	패키지: SOT-23-5 Thin, TSOT-23-5	재고5,696	EPROM	EPROM - OTP	1Kb (1K x 1)	1-Wire?	-	-	15µs	2.2 V ~ 5.5 V	-30°C ~ 85°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSOT-23-5
AT49F040A-70TU-T	Microchip Technology	IC FLASH 4MBIT 70NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 40µs Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	패키지: 32-TFSOP (0.724", 18.40mm Width)	재고5,888	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	40µs	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
MT46V128M4BN-75:D TR	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (128M x 4) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 750ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (10x12.5)	패키지: 60-TFBGA	재고5,744	DRAM	SDRAM - DDR	512Mb (128M x 4)	Parallel	133MHz	15ns	750ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-FBGA (10x12.5)
PSD813F1VA-15M	STMicroelectronics	IC FLASH 1MBIT 150NS 52QFP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-QFP Supplier Device Package: 52-PQFP (10x10)	패키지: 52-QFP	재고5,328	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	-	150ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	52-QFP	52-PQFP (10x10)
AT29LV010A-25TI	Microchip Technology	IC FLASH 1MBIT 250NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ms Access Time: 250ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	패키지: 32-TFSOP (0.724", 18.40mm Width)	재고5,424	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	20ms	250ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
AT28C010E-12PC	Microchip Technology	IC EEPROM 1MBIT 120NS 32DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	패키지: 32-DIP (0.600", 15.24mm)	재고6,256	EEPROM	EEPROM	1Mb (128K x 8)	Parallel	-	10ms	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
709279L12PFI8	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 12NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고3,952	SRAM	SRAM - Dual Port, Synchronous	512Kb (32K x 16)	Parallel	-	-	12ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
S29CD032J1JFFM010	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (1M x 32) Memory Interface: Parallel Clock Frequency: 40MHz Write Cycle Time - Word, Page: 60ns Access Time: 54ns Voltage - Supply: 1.65 V ~ 2.75 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,816	FLASH	FLASH - NOR	32Mb (1M x 32)	Parallel	40MHz	60ns	54ns	1.65 V ~ 2.75 V	-40°C ~ 125°C (TA)	-	-	-
MT28EW01GABA1LJS-0AAT TR	Micron Technology Inc.	IC FLASH 1GBIT 105NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8, 64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 105ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고5,424	FLASH	FLASH - NOR	1Gb (128M x 8, 64M x 16)	Parallel	-	60ns	105ns	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
IS45S32200L-6BLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고5,776	DRAM	SDRAM	64Mb (2M x 32)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
BQ2024DBZRG4	Texas Instruments	IC OTP 1.5KBIT SDQ SOT23-3 Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1.5K (6 pages x 32 bytes) Memory Interface: Single Wire Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.65 V ~ 5.5 V Operating Temperature: -20°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고15,252	EPROM	EPROM - OTP	1.5K (6 pages x 32 bytes)	Single Wire	-	-	-	2.65 V ~ 5.5 V	-20°C ~ 70°C (TA)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
24LC00/ST	Microchip Technology	IC EEPROM 128BIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128b (16 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 4ms Access Time: 3500ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고29,832	EEPROM	EEPROM	128b (16 x 8)	I2C	400kHz	4ms	3500ns	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AS7C3256A-10JCN	Alliance Memory, Inc.	IC SRAM 256KBIT 10NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	패키지: 28-BSOJ (0.300", 7.62mm Width)	재고8,892	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
24LC512T-I/SM	Microchip Technology	IC EEPROM 512KBIT 400KHZ 8SOIJ Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIJ	패키지: 8-SOIC (0.209", 5.30mm Width)	재고404,928	EEPROM	EEPROM	512Kb (64K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIJ
24LC00/S	Microchip Technology	IC EEPROM 128 I2C 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128b (16 x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 4ms Access Time: 3500ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고5,968	EEPROM	EEPROM	128b (16 x 8)	I²C	400kHz	4ms	3500ns	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	Die	Die
IS61VPD102418A-250B3	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.6ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-PBGA (13x15)	패키지: 165-TBGA	재고4,224	SRAM	SRAM - Quad Port, Synchronous	18Mb (1M x 18)	Parallel	250MHz	-	2.6ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-PBGA (13x15)
FM25640B-G2TR	Cypress Semiconductor Corp	IC MEMORY 64KB NONVOL 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고360,000	FRAM	FRAM (Ferroelectric RAM)	64Kb (8K x 8)	SPI	-	-	-	4.5 V ~ 5.5 V	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT35XU02GCBA1G12-0AAT	Micron Technology Inc.	IC FLASH NOR 2G 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gb (256M x 8) Memory Interface: Xccela Bus Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고4,208	FLASH	FLASH - NOR	2Gb (256M x 8)	Xccela Bus	200MHz	-	-	1.7V ~ 2V	-40°C ~ 105°C	Surface Mount	24-TBGA	24-T-PBGA (6x8)
28055857A	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F768M64D4EK-023-AIT-B-TR	Micron Technology Inc.	LPDDR5 48G 768MX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	48Gbit	Parallel	3.2 GHz	-	-	-	-40°C ~ 95°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
NDL26PFJ-8KIT-TR	Insignis Technology Corporation	IC DRAM 2GBIT PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-FBGA (7.5x13)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3L	2Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-FBGA (7.5x13)
BR24G128F-5E2	Rohm Semiconductor	128KBIT, IC BUS, HIGH ENDURANCE, Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	EEPROM	EEPROM	128Kbit	I2C	1 MHz	5ms	-	1.6V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
MT29VZZZAD81SFSL-046-W-22C-TR	Micron Technology Inc.	ALL IN ONE MCP 544G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS21TF32G-JCLI	ISSI, Integrated Silicon Solution Inc	IC FLASH 256GBIT EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 256Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	패키지: -	재고927	FLASH	FLASH - NAND (TLC)	256Gbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
MT29F1G08ABAFAH4-AAT-F-TR	Micron Technology Inc.	IC FLASH 1GBIT PARALLEL 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	1Gbit	Parallel	-	20ns	20 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MT29F1T08EBLCEJ4-ES-C	Micron Technology Inc.	TLC 1T 128GX8 VBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

315-1345-000 AAA

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,384

-

IS42SM32400G-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고6,512

DRAM

SDRAM - Mobile

128Mb (4M x 32)

Parallel

166MHz

-

5.5ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

DS25LV02R+T&R

Maxim Integrated

IC OTP 1KBIT 1WIRE SOT23-5

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Kb (1K x 1)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 15µs
Voltage - Supply: 2.2 V ~ 5.5 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-23-5

패키지: SOT-23-5 Thin, TSOT-23-5

재고5,696

EPROM

EPROM - OTP

1Kb (1K x 1)

1-Wire?

-

15µs

2.2 V ~ 5.5 V

-30°C ~ 85°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSOT-23-5

AT49F040A-70TU-T

Microchip Technology

IC FLASH 4MBIT 70NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 40µs
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

패키지: 32-TFSOP (0.724", 18.40mm Width)

재고5,888

FLASH

4Mb (512K x 8)

Parallel

-

40µs

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

MT46V128M4BN-75:D TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (128M x 4)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 750ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (10x12.5)

패키지: 60-TFBGA

재고5,744

DRAM

SDRAM - DDR

512Mb (128M x 4)

Parallel

133MHz

15ns

750ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-FBGA (10x12.5)

PSD813F1VA-15M

STMicroelectronics

IC FLASH 1MBIT 150NS 52QFP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 150ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-QFP
Supplier Device Package: 52-PQFP (10x10)

패키지: 52-QFP

재고5,328

FLASH

1Mb (128K x 8)

Parallel

-

150ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

52-QFP

52-PQFP (10x10)

AT29LV010A-25TI

Microchip Technology

IC FLASH 1MBIT 250NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ms
Access Time: 250ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

패키지: 32-TFSOP (0.724", 18.40mm Width)

재고5,424

FLASH

1Mb (128K x 8)

Parallel

-

20ms

250ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

AT28C010E-12PC

Microchip Technology

IC EEPROM 1MBIT 120NS 32DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

패키지: 32-DIP (0.600", 15.24mm)

재고6,256

EEPROM

1Mb (128K x 8)

Parallel

-

10ms

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

709279L12PFI8

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 12NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고3,952

SRAM

SRAM - Dual Port, Synchronous

512Kb (32K x 16)

Parallel

-

12ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

S29CD032J1JFFM010

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (1M x 32)
Memory Interface: Parallel
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 54ns
Voltage - Supply: 1.65 V ~ 2.75 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,816

FLASH

FLASH - NOR

32Mb (1M x 32)

Parallel

40MHz

60ns

54ns

1.65 V ~ 2.75 V

-40°C ~ 125°C (TA)

-

MT28EW01GABA1LJS-0AAT TR

Micron Technology Inc.

IC FLASH 1GBIT 105NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8, 64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 105ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고5,424

FLASH

FLASH - NOR

1Gb (128M x 8, 64M x 16)

Parallel

-

60ns

105ns

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

IS45S32200L-6BLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고5,776

DRAM

SDRAM

64Mb (2M x 32)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

BQ2024DBZRG4

Texas Instruments

IC OTP 1.5KBIT SDQ SOT23-3

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1.5K (6 pages x 32 bytes)
Memory Interface: Single Wire
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.65 V ~ 5.5 V
Operating Temperature: -20°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고15,252

EPROM

EPROM - OTP

1.5K (6 pages x 32 bytes)

Single Wire

-

2.65 V ~ 5.5 V

-20°C ~ 70°C (TA)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

24LC00/ST

Microchip Technology

IC EEPROM 128BIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128b (16 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 4ms
Access Time: 3500ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고29,832

EEPROM

128b (16 x 8)

I2C

400kHz

4ms

3500ns

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AS7C3256A-10JCN

Alliance Memory, Inc.

IC SRAM 256KBIT 10NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

패키지: 28-BSOJ (0.300", 7.62mm Width)

재고8,892

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

10ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

24LC512T-I/SM

Microchip Technology

IC EEPROM 512KBIT 400KHZ 8SOIJ

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIJ

패키지: 8-SOIC (0.209", 5.30mm Width)

재고404,928

EEPROM

512Kb (64K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIJ

24LC00/S

Microchip Technology

IC EEPROM 128 I2C 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128b (16 x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 4ms
Access Time: 3500ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고5,968

EEPROM

128b (16 x 8)

I²C

400kHz

4ms

3500ns

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

Die

IS61VPD102418A-250B3

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.6ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-PBGA (13x15)

패키지: 165-TBGA

재고4,224

SRAM

SRAM - Quad Port, Synchronous

18Mb (1M x 18)

Parallel

250MHz

-

2.6ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-PBGA (13x15)

FM25640B-G2TR

Cypress Semiconductor Corp

IC MEMORY 64KB NONVOL 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고360,000

FRAM

FRAM (Ferroelectric RAM)

64Kb (8K x 8)

SPI

-

4.5 V ~ 5.5 V

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT35XU02GCBA1G12-0AAT

Micron Technology Inc.

IC FLASH NOR 2G 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고4,208

FLASH

FLASH - NOR

2Gb (256M x 8)

Xccela Bus

200MHz

-

1.7V ~ 2V

-40°C ~ 105°C

Surface Mount

24-TBGA

24-T-PBGA (6x8)

28055857A

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT62F768M64D4EK-023-AIT-B-TR

Micron Technology Inc.

LPDDR5 48G 768MX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

48Gbit

Parallel

3.2 GHz

-

-40°C ~ 95°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

NDL26PFJ-8KIT-TR

Insignis Technology Corporation

IC DRAM 2GBIT PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-FBGA (7.5x13)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3L

2Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-FBGA (7.5x13)

BR24G128F-5E2

Rohm Semiconductor

128KBIT, IC BUS, HIGH ENDURANCE,

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

EEPROM

128Kbit

I2C

1 MHz

5ms

-

1.6V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

MT29VZZZAD81SFSL-046-W-22C-TR

Micron Technology Inc.

ALL IN ONE MCP 544G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IS21TF32G-JCLI

ISSI, Integrated Silicon Solution Inc

IC FLASH 256GBIT EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 256Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

패키지: -

재고927

FLASH

FLASH - NAND (TLC)

256Gbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

MT29F1G08ABAFAH4-AAT-F-TR

Micron Technology Inc.

IC FLASH 1GBIT PARALLEL 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

1Gbit

Parallel

-

20ns

20 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MT29F1T08EBLCEJ4-ES-C

Micron Technology Inc.

TLC 1T 128GX8 VBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-