페이지 2086 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CY7C11481KV18-400BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 400MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II+ Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고4,176	SRAM	SRAM - Synchronous, DDR II+	18Mb (1M x 18)	Parallel	400MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IS42S16100E-7BI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 143MHZ 60TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (6.4x10.1)	패키지: 60-TFBGA	재고4,944	DRAM	SDRAM	16Mb (1M x 16)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (6.4x10.1)
MT28F400B5SG-8 TET	Micron Technology Inc.	IC FLASH 4MBIT 80NS 44SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 80ns Access Time: 80ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-SOIC (0.496", 12.60mm Width) Supplier Device Package: 44-SOP	패키지: 44-SOIC (0.496", 12.60mm Width)	재고4,688	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	80ns	80ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-SOIC (0.496", 12.60mm Width)	44-SOP
93AA46XT/SN	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8 , 64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,288	EEPROM	EEPROM	1Kb (128 x 8 , 64 x 16)	SPI	2MHz	10ms	-	1.8 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
7130SA25J	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 25NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	패키지: 52-LCC (J-Lead)	재고2,944	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
MT28GU256AAA1EGC-0SIT TR	Micron Technology Inc.	IC FLASH Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 96ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-TBGA (10x8)	패키지: 64-TBGA	재고7,824	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	133MHz	-	96ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-TBGA (10x8)
71V3577S85BGG	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 87MHz Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고6,768	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	87MHz	-	8.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
M58WR032KB70ZB6W TR	Micron Technology Inc.	IC FLASH 32MBIT 70NS 56VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (2M x 16) Memory Interface: Parallel Clock Frequency: 66MHz Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-VFBGA Supplier Device Package: 56-VFBGA (7.7x9)	패키지: 56-VFBGA	재고3,936	FLASH	FLASH - NOR	32Mb (2M x 16)	Parallel	66MHz	70ns	70ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	56-VFBGA	56-VFBGA (7.7x9)
MT29F2G08ABAFAH4-IT:F TR	Micron Technology Inc.	IC FLASH 2GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,224	FLASH	FLASH - NAND	2Gb (256M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
IS43R16800E-6TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고2,592	DRAM	SDRAM - DDR	128Mb (8M x 16)	Parallel	166MHz	12ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
MX25V1635FM1I	Macronix	IC FLASH 16MBIT 80MHZ 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI Clock Frequency: 80MHz Write Cycle Time - Word, Page: 100µs, 4ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고11,064	FLASH	FLASH - NOR	16Mb (2M x 8)	SPI	80MHz	100µs, 4ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
CY7C0832AV-167AXC	Cypress Semiconductor Corp	IC SRAM 4.5MBIT 167MHZ 120TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 120-LQFP Supplier Device Package: 120-TQFP (14x14)	패키지: 120-LQFP	재고7,920	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	167MHz	-	-	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	120-LQFP	120-TQFP (14x14)
FT24C128A-UTG-T	Fremont Micro Devices USA	IC EEPROM 128KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고6,336	EEPROM	EEPROM	128Kb (16K x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SST26VF064B-104I/MN	Microchip Technology	IC FLASH 64MBIT 104MHZ 8WDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WDFN (6x8)	패키지: 8-WDFN Exposed Pad	재고40,140	FLASH	FLASH	64Mb (8M x 8)	SPI - Quad I/O	104MHz	1.5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WDFN (6x8)
NM27C256Q200	ON Semiconductor	IC EPROM 256K PARALLEL 28CDIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - UV Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Window Supplier Device Package: 28-CDIP	패키지: 28-CDIP (0.600", 15.24mm) Window	재고2,256	EPROM	EPROM - UV	256Kb (32K x 8)	Parallel	-	-	200ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm) Window	28-CDIP
S25FL064LABNFM011	Cypress Semiconductor Corp	IC FLASH 64M SPI 108MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-WSON (5x6)	패키지: 8-WFDFN Exposed Pad	재고3,568	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-WSON (5x6)
MT52L256M32D1PF-107 WT:B	Micron Technology Inc.	IC DRAM 8G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,312	DRAM	SDRAM - Mobile LPDDR3	8Gb (256M x 32)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT38Q50DEB10DBDXAU.Y74	Micron Technology Inc.	IC MEM DDR MULTICHIP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,312	-	-	-	-	-	-	-	-	-	-	-	-
IS49NLC18320A-18WBLI	ISSI, Integrated Silicon Solution Inc	RLDRAM2 Memory, 576Mbit, x18, Co Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 2 Memory Size: 576Mbit Memory Interface: HSTL Clock Frequency: 533 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: -	Request a Quote	DRAM	RLDRAM 2	576Mbit	HSTL	533 MHz	-	15 ns	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount	144-TFBGA	144-TWBGA (11x18.5)
04368ETLAB-33	IBM	IC SRAM 8MBIT HSTL 153BGA Memory Type: - Memory Format: SRAM Technology: - Memory Size: 8Mbit Memory Interface: HSTL Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 153-BBGA Supplier Device Package: 153-BGA	패키지: -	Request a Quote	SRAM	-	8Mbit	HSTL	-	-	-	-	-	Surface Mount	153-BBGA	153-BGA
W958D8NWSX4I-TR	Winbond Electronics	256MB HYPERRAM X8, 250MHZ, IND T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고9,000	-	-	-	-	-	-	-	-	-	-	-	-
S70KL1282GABHV020	Infineon Technologies	IC PSRAM 128MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 128Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	패키지: -	재고8,445	PSRAM	PSRAM (Pseudo SRAM)	128Mbit	HyperBus	200 MHz	35ns	35 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
MT62F512M64D4BG-031-WT-B-TR	Micron Technology Inc.	LPDDR5 32G 512MX64 FBGA QDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	3.2 GHz	-	-	-	-25°C ~ 85°C	-	-	-
CY7C1911KV18-300BZCKG	Cypress Semiconductor Corp	IC SRAM 18MBIT PARALLEL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 300 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous, QDR II	18Mbit	Parallel	300 MHz	-	-	1.7V ~ 1.9V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
27S03-BEA	Rochester Electronics, LLC	27S03 - SRAM - DUAL MARKED (8605 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS26KL512S-DABLI00	Infineon Technologies	INFINEON Memory Type: Non-Volatile Memory Format: FLASH Technology: HyperFlash Memory Size: 512Mbit Memory Interface: HyperBus Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 96 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-VFBGA (6x8)	패키지: -	Request a Quote	FLASH	HyperFlash	512Mbit	HyperBus	100 MHz	-	96 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-VFBGA (6x8)
MX60UF8G18AC-XKI	Macronix	MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 8Gbit Memory Interface: ONFI Clock Frequency: - Write Cycle Time - Word, Page: 25ns, 600µs Access Time: 22 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	8Gbit	ONFI	-	25ns, 600µs	22 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
041841QLAD-5	IBM	IC SRAM 4MBIT HSTL 119BGA Memory Type: - Memory Format: SRAM Technology: - Memory Size: 4Mbit Memory Interface: HSTL Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3.3V Operating Temperature: - Mounting Type: Surface Mount Package / Case: 119-BBGA Supplier Device Package: 119-BGA (17x7)	패키지: -	Request a Quote	SRAM	-	4Mbit	HSTL	-	-	-	3.3V	-	Surface Mount	119-BBGA	119-BGA (17x7)

CY7C11481KV18-400BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 400MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고4,176

SRAM

SRAM - Synchronous, DDR II+

18Mb (1M x 18)

Parallel

400MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IS42S16100E-7BI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 60TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (6.4x10.1)

패키지: 60-TFBGA

재고4,944

DRAM

SDRAM

16Mb (1M x 16)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (6.4x10.1)

MT28F400B5SG-8 TET

Micron Technology Inc.

IC FLASH 4MBIT 80NS 44SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 80ns
Access Time: 80ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SOP

패키지: 44-SOIC (0.496", 12.60mm Width)

재고4,688

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

80ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-SOIC (0.496", 12.60mm Width)

44-SOP

93AA46XT/SN

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8 , 64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,288

EEPROM

1Kb (128 x 8 , 64 x 16)

SPI

2MHz

10ms

-

1.8 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

7130SA25J

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 25NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

패키지: 52-LCC (J-Lead)

재고2,944

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

MT28GU256AAA1EGC-0SIT TR

Micron Technology Inc.

IC FLASH

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 96ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-TBGA (10x8)

패키지: 64-TBGA

재고7,824

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

133MHz

-

96ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-TBGA (10x8)

71V3577S85BGG

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 87MHz
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고6,768

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

87MHz

-

8.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

M58WR032KB70ZB6W TR

Micron Technology Inc.

IC FLASH 32MBIT 70NS 56VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (2M x 16)
Memory Interface: Parallel
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Supplier Device Package: 56-VFBGA (7.7x9)

패키지: 56-VFBGA

재고3,936

FLASH

FLASH - NOR

32Mb (2M x 16)

Parallel

66MHz

70ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

56-VFBGA

56-VFBGA (7.7x9)

MT29F2G08ABAFAH4-IT:F TR

Micron Technology Inc.

IC FLASH 2GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,224

FLASH

FLASH - NAND

2Gb (256M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

IS43R16800E-6TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고2,592

DRAM

SDRAM - DDR

128Mb (8M x 16)

Parallel

166MHz

12ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

MX25V1635FM1I

Macronix

IC FLASH 16MBIT 80MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 100µs, 4ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고11,064

FLASH

FLASH - NOR

16Mb (2M x 8)

SPI

80MHz

100µs, 4ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

CY7C0832AV-167AXC

Cypress Semiconductor Corp

IC SRAM 4.5MBIT 167MHZ 120TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Supplier Device Package: 120-TQFP (14x14)

패키지: 120-LQFP

재고7,920

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

167MHz

-

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

120-LQFP

120-TQFP (14x14)

FT24C128A-UTG-T

Fremont Micro Devices USA

IC EEPROM 128KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고6,336

EEPROM

128Kb (16K x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SST26VF064B-104I/MN

Microchip Technology

IC FLASH 64MBIT 104MHZ 8WDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WDFN (6x8)

패키지: 8-WDFN Exposed Pad

재고40,140

FLASH

64Mb (8M x 8)

SPI - Quad I/O

104MHz

1.5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WDFN (6x8)

NM27C256Q200

ON Semiconductor

IC EPROM 256K PARALLEL 28CDIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - UV
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm) Window
Supplier Device Package: 28-CDIP

패키지: 28-CDIP (0.600", 15.24mm) Window

재고2,256

EPROM

EPROM - UV

256Kb (32K x 8)

Parallel

-

200ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm) Window

28-CDIP

S25FL064LABNFM011

Cypress Semiconductor Corp

IC FLASH 64M SPI 108MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-WSON (5x6)

패키지: 8-WFDFN Exposed Pad

재고3,568

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-WSON (5x6)

MT52L256M32D1PF-107 WT:B

Micron Technology Inc.

IC DRAM 8G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,312

DRAM

SDRAM - Mobile LPDDR3

8Gb (256M x 32)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT38Q50DEB10DBDXAU.Y74

Micron Technology Inc.

IC MEM DDR MULTICHIP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,312

-

IS49NLC18320A-18WBLI

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 576Mbit, x18, Co

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 2
Memory Size: 576Mbit
Memory Interface: HSTL
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: -

Request a Quote

DRAM

RLDRAM 2

576Mbit

HSTL

533 MHz

-

15 ns

1.7V ~ 1.9V

-40°C ~ 85°C (TA)

Surface Mount

144-TFBGA

144-TWBGA (11x18.5)

04368ETLAB-33

IBM

IC SRAM 8MBIT HSTL 153BGA

Memory Type: -
Memory Format: SRAM
Technology: -
Memory Size: 8Mbit
Memory Interface: HSTL
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 153-BBGA
Supplier Device Package: 153-BGA

패키지: -

Request a Quote

SRAM

-

8Mbit

HSTL

-

Surface Mount

153-BBGA

153-BGA

W958D8NWSX4I-TR

Winbond Electronics

256MB HYPERRAM X8, 250MHZ, IND T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고9,000

-

S70KL1282GABHV020

Infineon Technologies

IC PSRAM 128MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 128Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

패키지: -

재고8,445

PSRAM

PSRAM (Pseudo SRAM)

128Mbit

HyperBus

200 MHz

35ns

35 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

MT62F512M64D4BG-031-WT-B-TR

Micron Technology Inc.

LPDDR5 32G 512MX64 FBGA QDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

3.2 GHz

-

-25°C ~ 85°C

-

CY7C1911KV18-300BZCKG

Cypress Semiconductor Corp

IC SRAM 18MBIT PARALLEL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 300 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous, QDR II

18Mbit

Parallel

300 MHz

-

1.7V ~ 1.9V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

27S03-BEA

Rochester Electronics, LLC

27S03 - SRAM - DUAL MARKED (8605

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IS26KL512S-DABLI00

Infineon Technologies

INFINEON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: HyperFlash
Memory Size: 512Mbit
Memory Interface: HyperBus
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 96 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-VFBGA (6x8)

패키지: -

Request a Quote

FLASH

HyperFlash

512Mbit

HyperBus

100 MHz

-

96 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-VFBGA (6x8)

MX60UF8G18AC-XKI

Macronix

MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 8Gbit
Memory Interface: ONFI
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns, 600µs
Access Time: 22 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

8Gbit

ONFI

-

25ns, 600µs

22 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

041841QLAD-5

IBM

IC SRAM 4MBIT HSTL 119BGA

Memory Type: -
Memory Format: SRAM
Technology: -
Memory Size: 4Mbit
Memory Interface: HSTL
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3.3V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 119-BBGA
Supplier Device Package: 119-BGA (17x7)

패키지: -

Request a Quote

SRAM

-

4Mbit

HSTL

-

3.3V

-

Surface Mount

119-BBGA

119-BGA (17x7)