페이지 2087 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S99GL512P12TFIV20	Cypress Semiconductor Corp	IC FLASH 512MBIT 120NS SMD Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (18.4x14)	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고5,328	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	-	-	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (18.4x14)
AT93C46E-TH-T	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고21,660	EEPROM	EEPROM	1Kb (64 x 16)	SPI	2MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
N2M400HDB321A3CF	Micron Technology Inc.	IC FLASH 128GBIT 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (14x18)	패키지: 100-LBGA	재고3,888	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LBGA	100-LBGA (14x18)
IS25LQ016-JKLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 16MBIT 104MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: 8-WDFN Exposed Pad	재고3,056	FLASH	FLASH - NOR	16Mb (2M x 8)	SPI - Quad I/O	104MHz	2ms	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
IDT71V2576YS150PF	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고3,712	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71V2546S150PFI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고2,192	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
AT24C02N-10SU-2.7	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고13,932	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT49F001ANT-55JI	Microchip Technology	IC FLASH 1MBIT 55NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고345,600	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	50µs	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
LH28F160BJE-BTL90	Sharp Microelectronics	IC FLASH 16MBIT 90NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - Boot Block Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고43,212	FLASH	FLASH - Boot Block	16Mb (2M x 8, 1M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
DS1265W-100IND+	Maxim Integrated	IC NVSRAM 8MBIT 100NS 36EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 8Mb (1M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 36-DIP Module (0.600", 15.24mm) Supplier Device Package: 36-EDIP	패키지: 36-DIP Module (0.600", 15.24mm)	재고5,856	NVSRAM	NVSRAM (Non-Volatile SRAM)	8Mb (1M x 8)	Parallel	-	100ns	100ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Through Hole	36-DIP Module (0.600", 15.24mm)	36-EDIP
7024L35G	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 35NS 84PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 84-BPGA Supplier Device Package: 84-PGA (27.94x27.94)	패키지: 84-BPGA	재고5,568	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	84-BPGA	84-PGA (27.94x27.94)
71T75902S85BG	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 8.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고5,840	SRAM	SRAM - Synchronous ZBT	18Mb (1M x 18)	Parallel	-	-	8.5ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
CY7C1372KV33-200AXC	Cypress Semiconductor Corp	IC SRAM 18MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고6,688	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	200MHz	-	3ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
IS43DR16320D-25DBL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 400MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	패키지: 84-TFBGA	재고5,168	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
25AA512T-I/MF	Microchip Technology	IC EEPROM 512KBIT 20MHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN-S (6x5)	패키지: 8-VDFN Exposed Pad	재고7,056	EEPROM	EEPROM	512Kb (64K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-DFN-S (6x5)
93AA46AT-I/MS	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고72,000	EEPROM	EEPROM	1Kb (128 x 8)	SPI	2MHz	6ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
S29AL008J70BFI013	Cypress Semiconductor Corp	IC FLASH 8MBIT 70NS 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8.15x6.15)	패키지: 48-VFBGA	재고6,384	FLASH	FLASH - NOR	8Mb (1M x 8, 512K x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-FBGA (8.15x6.15)
MX29GL256FHT2I-90Q	Macronix	IC FLASH 256MBIT 90NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고13,176	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
IS43R86400F-6TLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고2,512	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
MX25U25645GXDI00	Macronix	IC FLASH 256MBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,200	-	-	-	-	-	-	-	-	-	-	-	-
568.262.011	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,416	-	-	-	-	-	-	-	-	-	-	-	-
SST26VF016B-80E/SM70SVAO	Microchip Technology	16MBIT SPI/SQI FLASH 125C AUTO 2 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16M (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIJ	패키지: 8-SOIC (0.209", 5.30mm Width)	재고7,840	FLASH	FLASH	16M (2M x 8)	SPI - Quad I/O	80MHz	1.5ms	-	2.3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIJ
LC3564CM-70U-TLM-E	onsemi	64K STATIC RAMS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S27KL0642DPBHI030	Infineon Technologies	IC PSRAM 64MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mbit Memory Interface: HyperBus Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 36ns Access Time: 36 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	패키지: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	64Mbit	HyperBus	166 MHz	36ns	36 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
HN58V65AFPI10E	Renesas Electronics Corporation	64K EEPROM (8KWORD X 8-BIT) Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 100 ns Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.330", 8.38mm Width) Supplier Device Package: 28-SOP	패키지: -	Request a Quote	EEPROM	EEPROM	64Kbit	Parallel	-	10ms	100 ns	2.7V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	28-SOIC (0.330", 8.38mm Width)	28-SOP
7140SA35PDG	Renesas Electronics Corporation	IC SRAM Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-PDIP	패키지: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	8Kbit	Parallel	-	35ns	35 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-PDIP
IS46QR16512A-075VBLA1-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 8G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 1.333 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (10x14)	패키지: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	Parallel	1.333 GHz	15ns	18 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (10x14)
EM016LXQAB313IS1T	Everspin Technologies Inc.	IC RAM 16MBIT XSPI/QUAD 24TBGA Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 16Mbit Memory Interface: xSPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TBGA (6x8)	패키지: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	16Mbit	xSPI - Quad I/O	133 MHz	-	-	1.65V ~ 2V	-40°C ~ 85°C	Surface Mount	24-TBGA	24-TBGA (6x8)

S99GL512P12TFIV20

Cypress Semiconductor Corp

IC FLASH 512MBIT 120NS SMD

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (18.4x14)

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고5,328

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (18.4x14)

AT93C46E-TH-T

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고21,660

EEPROM

1Kb (64 x 16)

SPI

2MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

N2M400HDB321A3CF

Micron Technology Inc.

IC FLASH 128GBIT 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (14x18)

패키지: 100-LBGA

재고3,888

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

52MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LBGA

100-LBGA (14x18)

IS25LQ016-JKLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 16MBIT 104MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: 8-WDFN Exposed Pad

재고3,056

FLASH

FLASH - NOR

16Mb (2M x 8)

SPI - Quad I/O

104MHz

2ms

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

IDT71V2576YS150PF

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고3,712

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71V2546S150PFI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고2,192

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

AT24C02N-10SU-2.7

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고13,932

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT49F001ANT-55JI

Microchip Technology

IC FLASH 1MBIT 55NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고345,600

FLASH

1Mb (128K x 8)

Parallel

-

50µs

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

LH28F160BJE-BTL90

Sharp Microelectronics

IC FLASH 16MBIT 90NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - Boot Block
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고43,212

FLASH

FLASH - Boot Block

16Mb (2M x 8, 1M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

DS1265W-100IND+

Maxim Integrated

IC NVSRAM 8MBIT 100NS 36EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 8Mb (1M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 36-DIP Module (0.600", 15.24mm)
Supplier Device Package: 36-EDIP

패키지: 36-DIP Module (0.600", 15.24mm)

재고5,856

NVSRAM

NVSRAM (Non-Volatile SRAM)

8Mb (1M x 8)

Parallel

-

100ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Through Hole

36-DIP Module (0.600", 15.24mm)

36-EDIP

7024L35G

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 35NS 84PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 84-BPGA
Supplier Device Package: 84-PGA (27.94x27.94)

패키지: 84-BPGA

재고5,568

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

84-BPGA

84-PGA (27.94x27.94)

71T75902S85BG

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 8.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고5,840

SRAM

SRAM - Synchronous ZBT

18Mb (1M x 18)

Parallel

-

8.5ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

CY7C1372KV33-200AXC

Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고6,688

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

200MHz

-

3ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

IS43DR16320D-25DBL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 400MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

패키지: 84-TFBGA

재고5,168

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

25AA512T-I/MF

Microchip Technology

IC EEPROM 512KBIT 20MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-S (6x5)

패키지: 8-VDFN Exposed Pad

재고7,056

EEPROM

512Kb (64K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-DFN-S (6x5)

93AA46AT-I/MS

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고72,000

EEPROM

1Kb (128 x 8)

SPI

2MHz

6ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

S29AL008J70BFI013

Cypress Semiconductor Corp

IC FLASH 8MBIT 70NS 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)

패키지: 48-VFBGA

재고6,384

FLASH

FLASH - NOR

8Mb (1M x 8, 512K x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-FBGA (8.15x6.15)

MX29GL256FHT2I-90Q

Macronix

IC FLASH 256MBIT 90NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고13,176

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

IS43R86400F-6TLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고2,512

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

MX25U25645GXDI00

Macronix

IC FLASH 256MBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,200

-

568.262.011

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,416

-

SST26VF016B-80E/SM70SVAO

Microchip Technology

16MBIT SPI/SQI FLASH 125C AUTO 2

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16M (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIJ

패키지: 8-SOIC (0.209", 5.30mm Width)

재고7,840

FLASH

16M (2M x 8)

SPI - Quad I/O

80MHz

1.5ms

-

2.3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIJ

LC3564CM-70U-TLM-E

onsemi

64K STATIC RAMS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

S27KL0642DPBHI030

Infineon Technologies

IC PSRAM 64MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mbit
Memory Interface: HyperBus
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 36ns
Access Time: 36 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

패키지: -

Request a Quote

PSRAM

PSRAM (Pseudo SRAM)

64Mbit

HyperBus

166 MHz

36ns

36 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

HN58V65AFPI10E

Renesas Electronics Corporation

64K EEPROM (8KWORD X 8-BIT)

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 100 ns
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.330", 8.38mm Width)
Supplier Device Package: 28-SOP

패키지: -

Request a Quote

EEPROM

64Kbit

Parallel

-

10ms

100 ns

2.7V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

28-SOIC (0.330", 8.38mm Width)

28-SOP

7140SA35PDG

Renesas Electronics Corporation

IC SRAM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-PDIP

패키지: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

8Kbit

Parallel

-

35ns

35 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-PDIP

IS46QR16512A-075VBLA1-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 1.333 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (10x14)

패키지: -

Request a Quote

DRAM

SDRAM - DDR4

8Gbit

Parallel

1.333 GHz

15ns

18 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (10x14)

EM016LXQAB313IS1T

Everspin Technologies Inc.

IC RAM 16MBIT XSPI/QUAD 24TBGA

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 16Mbit
Memory Interface: xSPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TBGA (6x8)

패키지: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

16Mbit

xSPI - Quad I/O

133 MHz

-

1.65V ~ 2V

-40°C ~ 85°C

Surface Mount

24-TBGA

24-TBGA (6x8)