페이지 2096 - 메모리 | 집적 회로(IC) | Heisener Electronics
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부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT29RZ4B2DZZHGSK-18 W.80E
Micron Technology Inc.

IC FLASH 6G DDR2

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDDR2)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,944
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDDR2)
Parallel
533MHz
-
-
1.8V
-25°C ~ 85°C (TA)
-
-
-
23LCV512T-E/SN
Microchip Technology

IC SRAM 512KBIT 20MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI - Dual I/O
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,544
NVSRAM
NVSRAM (Non-Volatile SRAM)
512Kb (64K x 8)
SPI - Dual I/O
20MHz
-
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IDT71V65602S150PFGI8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고3,632
SRAM
SRAM - Synchronous ZBT
9Mb (256K x 36)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IS42S32800B-6BI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고5,760
DRAM
SDRAM
256Mb (8M x 32)
Parallel
166MHz
-
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
M58LW032D90ZA6
STMicroelectronics

IC FLASH 32MBIT 90NS 64TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-TBGA (10x13)
패키지: 64-TBGA
재고2,288
FLASH
FLASH - NOR
32Mb (4M x 8, 2M x 16)
Parallel
-
-
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-TBGA (10x13)
CY7C1069AV33-8ZXC
Cypress Semiconductor Corp

IC SRAM 16MBIT 8NS 54TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 8ns
  • Access Time: 8ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고3,520
SRAM
SRAM - Asynchronous
16Mb (2M x 8)
Parallel
-
8ns
8ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
AT49BV322AT-70CU
Microchip Technology

IC FLASH 32MBIT 70NS 48CBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 200µs
  • Access Time: 70ns
  • Voltage - Supply: 2.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA, CSPBGA
  • Supplier Device Package: 48-CBGA (6x8)
패키지: 48-TFBGA, CSPBGA
재고2,336
FLASH
FLASH
32Mb (4M x 8, 2M x 16)
Parallel
-
200µs
70ns
2.65 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
48-TFBGA, CSPBGA
48-CBGA (6x8)
70V25L20PF
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 20NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고3,664
SRAM
SRAM - Dual Port, Asynchronous
128Kb (8K x 16)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MT29TZZZ8D5BKFAH-125 W.95K TR
Micron Technology Inc.

MCP 8GX8/256X32 PLASTIC VFBGA 3.

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,936
-
-
-
-
-
-
-
-
-
-
-
-
S70FL01GSDPMFV011
Cypress Semiconductor Corp

IC FLASH 1GBIT 80MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 80MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO
패키지: 16-SOIC (0.295", 7.50mm Width)
재고2,560
FLASH
FLASH - NOR
1Gb (128M x 8)
SPI - Quad I/O
80MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SO
IS43LR16200D-6BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 32MBIT 166MHZ 60BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (8x10)
패키지: 60-TFBGA
재고2,800
DRAM
SDRAM - Mobile DDR
32Mb (2M x 16)
Parallel
166MHz
15ns
5.5ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (8x10)
71024S12TYGI
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 32-SOJ
패키지: 32-BSOJ (0.300", 7.62mm Width)
재고3,296
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-BSOJ (0.300", 7.62mm Width)
32-SOJ
hot DS28E22P+
Maxim Integrated

IC EEPROM 2KBIT 1WIRE 6TSOC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (2K x 1)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 2.97 V ~ 3.63 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-LSOJ (0.148", 3.76mm Width)
  • Supplier Device Package: 6-TSOC
패키지: 6-LSOJ (0.148", 3.76mm Width)
재고4,400
EEPROM
EEPROM
2Kb (2K x 1)
1-Wire?
-
-
2µs
2.97 V ~ 3.63 V
-40°C ~ 85°C (TA)
Surface Mount
6-LSOJ (0.148", 3.76mm Width)
6-TSOC
AT27C4096-90JU
Microchip Technology

IC OTP 4MBIT 90NS 44PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead)
  • Supplier Device Package: 44-PLCC (16.59x16.59)
패키지: 44-LCC (J-Lead)
재고22,764
EPROM
EPROM - OTP
4Mb (256K x 16)
Parallel
-
-
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
44-LCC (J-Lead)
44-PLCC (16.59x16.59)
hot IS61WV25616BLL-10TLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고524,052
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
S29GL512T10FHI033
Cypress Semiconductor Corp

IC NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
패키지: 64-LBGA
재고7,664
-
-
-
-
-
-
-
-
-
Surface Mount
64-LBGA
64-FBGA (13x11)
MT53D384M32D2DS-053 WT:C TR
Micron Technology Inc.

IC DRAM 12G 1866MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 12Gb (384M x 32)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,344
DRAM
SDRAM - Mobile LPDDR4
12Gb (384M x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT29F2T08EMHAFJ4-3TES:A TR
Micron Technology Inc.

IC FLASH 2T PARALLEL 333MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Tb (256G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,472
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MT53E1G64D4HJ-046-WT-C
Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 64Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 556-TFBGA
  • Supplier Device Package: 556-WFBGA (12.4x12.4)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
64Gbit
Parallel
2.133 GHz
18ns
3.5 ns
1.06V ~ 1.17V
-30°C ~ 85°C (TC)
Surface Mount
556-TFBGA
556-WFBGA (12.4x12.4)
NM93C46LEN
Fairchild Semiconductor

IC EEPROM 1KBIT MICROWIRE 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 250 kHz
  • Write Cycle Time - Word, Page: 15ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: -
Request a Quote
EEPROM
EEPROM
1Kbit
Microwire
250 kHz
15ms
-
2.7V ~ 5.5V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
W25N02JWZEIF
Winbond Electronics

IC FLASH 2GBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
2Gbit
SPI - Quad I/O, DTR
166 MHz
700µs
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
CAT93C86V-TE13
onsemi

IC EEPROM 16KBIT MICROWIRE 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 3 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 100 ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
EEPROM
EEPROM
16Kbit
Microwire
3 MHz
-
100 ns
2.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
GS81280Z36GT-250I
GSI Technology Inc.

IC SRAM 144MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, ZBT
  • Memory Size: 144Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 250 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (20x14)
패키지: -
Request a Quote
SRAM
SRAM - Synchronous, ZBT
144Mbit
Parallel
250 MHz
-
-
2.3V ~ 2.7V, 3V ~ 3.6V
-40°C ~ 100°C (TJ)
Surface Mount
100-LQFP
100-TQFP (20x14)
24CS512-E-SM
Microchip Technology

IC EEPROM 512KBIT I2C 8SOIJ

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kbit
  • Memory Interface: I2C
  • Clock Frequency: 3.4 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 400 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIJ
패키지: -
재고768
EEPROM
EEPROM
512Kbit
I2C
3.4 MHz
5ms
400 ns
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIJ
CG9080AA
Infineon Technologies

IC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS42S32800J-6BI
ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PARALLEL 90TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: -
Request a Quote
DRAM
SDRAM
256Mbit
Parallel
166 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
MT29F1T08EELEEJ4-T-E-TR
Micron Technology Inc.

TLC 1T 128GX8 VBGA DDP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 1Tbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.6V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 132-VBGA
  • Supplier Device Package: 132-VBGA (12x18)
패키지: -
Request a Quote
FLASH
FLASH - NAND (TLC)
1Tbit
Parallel
-
-
-
2.6V ~ 3.6V
0°C ~ 70°C
Surface Mount
132-VBGA
132-VBGA (12x18)
24FC04-E-SN36KVAO
Microchip Technology

IC EEPROM 4KBIT I2C 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
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EEPROM
EEPROM
4Kbit
I2C
1 MHz
5ms
450 ns
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC