페이지 2098 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EDBA232B2PD-1D-F-D
Micron Technology Inc.

IC SDRAM 16GBIT 533MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 16Gb (512M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,264
DRAM
SDRAM - Mobile LPDDR2
16Gb (512M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
-
-
-
70V3399S133BFGI
IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 133MHZ 208FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 2Mb (128K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
패키지: 208-LFBGA
재고4,496
SRAM
SRAM - Dual Port, Synchronous
2Mb (128K x 18)
Parallel
133MHz
-
4.2ns
3.15 V ~ 3.45 V
-40°C ~ 85°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
N25Q032A13ESFA0F TR
Micron Technology Inc.

IC FLASH 32MBIT 108MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (8M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP2
패키지: 16-SOIC (0.295", 7.50mm Width)
재고7,152
FLASH
FLASH - NOR
32Mb (8M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP2
hot MT48LC8M16A2P-75 IT:G
Micron Technology Inc.

IC SDRAM 128MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고24,000
DRAM
SDRAM
128Mb (8M x 16)
Parallel
133MHz
15ns
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IDT71P74804S167BQG
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 167MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.4ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
패키지: 165-TBGA
재고5,504
SRAM
SRAM - Synchronous, QDR II
18Mb (1M x 18)
Parallel
167MHz
-
8.4ns
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
hot AT24C32A-10TU-1.8
Microchip Technology

IC EEPROM 32KBIT 400KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고123,300
EEPROM
EEPROM
32Kb (4K x 8)
I2C
400kHz
5ms
900ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
AT27LV256A-70JI
Microchip Technology

IC OTP 256KBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 70ns
  • Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고3,584
EPROM
EPROM - OTP
256Kb (32K x 8)
Parallel
-
-
70ns
3 V ~ 3.6 V, 4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
CY62167G30-45ZXA
Cypress Semiconductor Corp

MICROPOWER SRAMS

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,960
SRAM
SRAM - Asynchronous
16Mb (1M x 16)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
7015S35PF8
IDT, Integrated Device Technology Inc

IC SRAM 72KBIT 35NS 80TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 72Kb (8K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-TQFP (14x14)
패키지: 80-LQFP
재고2,240
SRAM
SRAM - Dual Port, Asynchronous
72Kb (8K x 9)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
80-LQFP
80-TQFP (14x14)
CY7C1061G30-10BV1XIT
Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
패키지: 48-VFBGA
재고4,288
SRAM
SRAM - Asynchronous
16Mb (1M x 16)
Parallel
-
10ns
10ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
AS7C3513B-15JCN
Alliance Memory, Inc.

IC SRAM 512KBIT 15NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 512Kb (32K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
패키지: 44-BSOJ (0.400", 10.16mm Width)
재고4,624
SRAM
SRAM - Asynchronous
512Kb (32K x 16)
Parallel
-
15ns
15ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
M29W320EB70ZE6F TR
Micron Technology Inc.

IC FLASH 32MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
패키지: 48-TFBGA
재고5,616
FLASH
FLASH - NOR
32Mb (4M x 8, 2M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
93C66A-I/ST
Microchip Technology

IC EEPROM 4KBIT 2MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 2ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고5,776
EEPROM
EEPROM
4Kb (512 x 8)
SPI
2MHz
2ms
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
24AA044T-I/ST
Microchip Technology

IC EEPROM 4KBIT 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 8 x 2)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 400ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고3,024
EEPROM
EEPROM
4Kb (256 x 8 x 2)
I2C
1MHz
5ms
400ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SST26WF064CT-104I/TD
Microchip Technology

64MBIT 1.8V SQI FLASH

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,888
-
-
-
-
-
-
-
-
-
-
-
-
93AA66C/WF15K
Microchip Technology

IC EEPROM 4K SPI 3MHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8, 256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,800
EEPROM
EEPROM
4Kb (512 x 8, 256 x 16)
SPI
3MHz
6ms
-
1.8 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
Die
Die
BR24A01AF-WME2
Rohm Semiconductor

EEPROM SERIAL-I2C 1K-BIT 128 X 8

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I²C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.173", 4.40mm Width)
재고21,384
EEPROM
EEPROM
1Kb (128 x 8)
I²C
400kHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
AT28C010-20DM/883
Microchip Technology

IC EEPROM 1M PARALLEL 32CDIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 200ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 32-CDIP (0.600", 15.24mm) Window
  • Supplier Device Package: 32-CDIP
패키지: 32-CDIP (0.600", 15.24mm) Window
재고4,688
EEPROM
EEPROM
1Mb (128K x 8)
Parallel
-
10ms
200ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
Through Hole
32-CDIP (0.600", 15.24mm) Window
32-CDIP
S25FL256SAGBHVD00
Cypress Semiconductor Corp

IC FLASH 256M SPI 133MHZ 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (6x8)
패키지: 24-TBGA
재고4,944
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-BGA (6x8)
MT53D768M32D2DS-046 WT:A TR
Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,232
-
-
-
-
-
-
-
-
-
-
-
-
IS25LE256E-RMLE-TY
Enfis

IC FLASH 256MB SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 50µs, 2ms
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
Request a Quote
FLASH
FLASH - NOR
256Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
50µs, 2ms
-
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
AF064GEC5X-2001A3
ATP Electronics, Inc.

IC FLASH 512GBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (MLC)
  • Memory Size: 512Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-FBGA
  • Supplier Device Package: 153-BGA (11.5x13)
패키지: -
재고27
FLASH
FLASH - NAND (MLC)
512Gbit
eMMC
-
-
-
-
-40°C ~ 85°C
Surface Mount
153-FBGA
153-BGA (11.5x13)
HM6-6642-883
Harris Corporation

IC PROM 4KBIT PARALLEL 24SBDIP

  • Memory Type: Non-Volatile
  • Memory Format: PROM
  • Technology: -
  • Memory Size: 4Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 200 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 24-CDIP (0.600", 15.24mm)
  • Supplier Device Package: 24-SBDIP
패키지: -
Request a Quote
PROM
-
4Kbit
Parallel
-
-
200 ns
4.5V ~ 5.5V
-55°C ~ 125°C (TA)
Through Hole
24-CDIP (0.600", 15.24mm)
24-SBDIP
IS25WE256E-RMLE-TR
ISSI, Integrated Silicon Solution Inc

256Mb QPI/QSPI, 16-pin SOP 300Mi

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 50µs, 1ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
50µs, 1ms
-
1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
CY7C1356C-200AXI
Infineon Technologies

IC SRAM 9MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 9Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.2 ns
  • Voltage - Supply: 3.135V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: -
재고432
SRAM
SRAM - Synchronous, SDR
9Mbit
Parallel
200 MHz
-
3.2 ns
3.135V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
IS46TR16512BL-125KBLA1-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (10x14)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
8Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (10x14)
W25N01JWSFIT
Winbond Electronics

IC FLASH 1GBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 6 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
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FLASH
FLASH - NAND (SLC)
1Gbit
SPI - Quad I/O, DTR
166 MHz
700µs
6 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
EM008LXQADG13IS1R
Everspin Technologies Inc.

IC RAM 8MBIT XSPI/QUAD 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 8Mbit
  • Memory Interface: xSPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (6x8)
패키지: -
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RAM
MRAM (Magnetoresistive RAM)
8Mbit
xSPI - Quad I/O
133 MHz
-
-
1.65V ~ 2V
-40°C ~ 85°C
Surface Mount
8-VDFN Exposed Pad
8-DFN (6x8)