페이지 2122 - 메모리 | 집적 회로(IC) | Heisener Electronics
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메모리

기록 62,144
페이지  2,122/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IDT6116SA35SOI8
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 24SOIC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 24-SOIC
패키지: 24-SOIC (0.295", 7.50mm Width)
재고6,128
SRAM
SRAM - Asynchronous
16Kb (2K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
24-SOIC (0.295", 7.50mm Width)
24-SOIC
IS61LV6416-10TI
ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고5,888
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
10ns
10ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS42S16400D-6TL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고2,656
DRAM
SDRAM
64Mb (4M x 16)
Parallel
166MHz
-
5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IS42S16100C1-7BL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 60TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (6.4x10.1)
패키지: 60-TFBGA
재고7,088
DRAM
SDRAM
16Mb (1M x 16)
Parallel
143MHz
-
5.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (6.4x10.1)
IS42S16100C1-5TL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 200MHZ 50TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 50-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 50-TSOP II
패키지: 50-TSOP (0.400", 10.16mm Width)
재고6,480
DRAM
SDRAM
16Mb (1M x 16)
Parallel
200MHz
-
5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
50-TSOP (0.400", 10.16mm Width)
50-TSOP II
hot AT25010N-10SI-2.7
Microchip Technology

IC EEPROM 1KBIT 2.1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고113,040
EEPROM
EEPROM
1Kb (128 x 8)
SPI
3MHz
5ms
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot CY14B256KA-SP25XI
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 25NS 48SSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: 48-SSOP
패키지: 48-BSSOP (0.295", 7.50mm Width)
재고6,672
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-BSSOP (0.295", 7.50mm Width)
48-SSOP
24LC024-E/MC
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-DFN (2x3)
패키지: 8-VFDFN Exposed Pad
재고2,100
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-VFDFN Exposed Pad
8-DFN (2x3)
hot CAT25040VP2I-GT3
ON Semiconductor

IC EEPROM 4KBIT 10MHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
패키지: 8-WFDFN Exposed Pad
재고5,024
EEPROM
EEPROM
4Kb (512 x 8)
SPI
10MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
hot 24LC1025-E/SM
Microchip Technology

IC EEPROM 1MBIT 400KHZ 8SOIJ

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIJ
패키지: 8-SOIC (0.209", 5.30mm Width)
재고26,964
EEPROM
EEPROM
1Mb (128K x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIJ
hot FM24V05-G
Cypress Semiconductor Corp

IC FRAM 512KBIT 3.4MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 3.4MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 130ns
  • Voltage - Supply: 2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,968
FRAM
FRAM (Ferroelectric RAM)
512Kb (64K x 8)
I2C
3.4MHz
-
130ns
2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot M95320-DRMN3TP/K
STMicroelectronics

IC EEPROM 32KBIT 20MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고22,296
EEPROM
EEPROM
32Kb (4K x 8)
SPI
20MHz
4ms
-
1.8 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
S25FL256SDPBHIC03
Cypress Semiconductor Corp

IC FLASH 256M SPI 66MHZ 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
패키지: 24-TBGA
재고3,664
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O
66MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
IS25LP128-JMLE-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 128M SPI 133MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 1ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.295", 7.50mm Width)
재고5,920
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O, QPI
133MHz
1ms
-
2.3 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
S25FL256SDPNFB000
Cypress Semiconductor Corp

IC FLASH 256M SPI 66MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
패키지: 8-WDFN Exposed Pad
재고9,540
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O
66MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
MTA9ASF1G72PZ-2G9E1
Micron Technology Inc.

IC DRAM 72G PARALLEL 1467MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 72Gb (1G x 72)
  • Memory Interface: Parallel
  • Clock Frequency: 1467MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,304
DRAM
SDRAM - DDR4
72Gb (1G x 72)
Parallel
1467MHz
-
-
1.2V
0°C ~ 95°C (TC)
-
-
-
70261S25PF/C
IDT, Integrated Device Technology Inc

IC SRAM 256K PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (16K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고3,424
SRAM
SRAM - Dual Port, Asynchronous
256Kb (16K x 16)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
71V321LA25PF8
IDT, Integrated Device Technology Inc

IC SRAM 16K PARALLEL 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: 64-LQFP
재고2,480
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
25ns
25ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
BR25H256NUX-5ACTR
Rohm Semiconductor

256KBIT, SPI BUS, HIGH SPEED WRI

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: 3.5ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: VSON008X2030
패키지: -
재고12,000
EEPROM
EEPROM
256Kbit
SPI
20 MHz
3.5ms
-
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-UFDFN Exposed Pad
VSON008X2030
GD25Q128EYIGR
GigaDevice Semiconductor (HK) Limited

128MBIT, 3.3V, WSON8 8*6MM, INDU

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 70µs, 2.4ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
패키지: -
재고8,469
FLASH
FLASH - NOR (SLC)
128Mbit
SPI - Quad I/O
133 MHz
70µs, 2.4ms
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
SM662GEE-BDSS
Silicon Motion, Inc.

IC FLASH 640GBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 640Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
640Gbit
eMMC
-
-
-
-
-40°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
HM5-8808-9
Harris Corporation

IC SRAM 64KBIT PARALLEL 28DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module
  • Supplier Device Package: 28-DIP Module
패키지: -
Request a Quote
SRAM
SRAM - Asynchronous
64Kbit
Parallel
-
150ns
150 ns
4.5V ~ 5.5V
-55°C ~ 125°C (TA)
Through Hole
28-DIP Module
28-DIP Module
IS34ML01G081-BLI-TR
ISSI, Integrated Silicon Solution Inc

1 Gbit(x8, 1 bit ECC), 63 Ball V

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 20 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (9x11)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
1Gbit
Parallel
-
25ns
20 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (9x11)
CY7C1360S-200AXC
Cypress Semiconductor Corp

IC SRAM 9MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 9Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3 ns
  • Voltage - Supply: 3.14V ~ 3.63V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: -
Request a Quote
SRAM
SRAM - Synchronous, SDR
9Mbit
Parallel
200 MHz
-
3 ns
3.14V ~ 3.63V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
MT29F4T08ELLCHL4-QA-C
Micron Technology Inc.

TLC 4T 512GX8 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
S26HS01GTGABHA023
Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 5.45 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (8x8)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
1Gbit
HyperBus
200 MHz
1.7ms
5.45 ns
1.7V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
24-VBGA
24-FBGA (8x8)
W77Q32JWSFIS
Winbond Electronics

IC FLASH 32MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
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FLASH
FLASH
32Mbit
SPI - Quad I/O, QPI
104 MHz
-
-
1.7V ~ 1.95V
-40°C ~ 85°C
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
NDQ48PFQ-8XET
Insignis Technology Corporation

DDR4 4GB X8 2400MHZ CL17 7.5X10.

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gbit
  • Memory Interface: POD
  • Clock Frequency: 1.2 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 18 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-FBGA (7.5x10.6)
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DRAM
SDRAM - DDR4
4Gbit
POD
1.2 GHz
15ns
18 ns
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (7.5x10.6)