페이지 2123 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EDF8132A3PF-GD-F-D	Micron Technology Inc.	IC SDRAM 8GBIT 800MHZ 168FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,568	DRAM	SDRAM - Mobile LPDDR3	8Gb (256M x 32)	Parallel	800MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
IS45S32800D-6BLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고3,776	DRAM	SDRAM	256Mb (32M x 8)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
IDT71V65602S100BG8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 100MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고2,864	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS42S32400B-7BI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 143MHZ 90FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고7,008	DRAM	SDRAM	128Mb (4M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
MT48LC4M32LFB5-8 XT:G	Micron Technology Inc.	IC SDRAM 128MBIT 125MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 125MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -20°C ~ 75°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	패키지: 90-VFBGA	재고5,264	DRAM	SDRAM - Mobile LPSDR	128Mb (4M x 32)	Parallel	125MHz	15ns	7ns	3 V ~ 3.6 V	-20°C ~ 75°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
PSD833F2-90M	STMicroelectronics	IC FLASH 1MBIT 90NS 52QFP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-QFP Supplier Device Package: 52-PQFP (10x10)	패키지: 52-QFP	재고5,408	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	-	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-QFP	52-PQFP (10x10)
AT27LV520-90SC	Microchip Technology	IC OTP 512KBIT 90NS 20SOIC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC	패키지: 20-SOIC (0.295", 7.50mm Width)	재고13,668	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	90ns	3 V ~ 3.6 V, 4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SOIC
70V3399S133BC	IDT, Integrated Device Technology Inc	IC SRAM 2MBIT 133MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 2Mb (128K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고5,232	SRAM	SRAM - Dual Port, Synchronous	2Mb (128K x 18)	Parallel	133MHz	-	4.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
MT49H8M36SJ-TI:B TR	Micron Technology Inc.	IC RLDRAM 288MBIT 144FBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 288Mb (8M x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-FBGA (18.5x11)	패키지: 144-TFBGA	재고4,064	DRAM	DRAM	288Mb (8M x 36)	Parallel	-	-	-	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-FBGA (18.5x11)
MT40A1G8WE-083E AAT:B TR	Micron Technology Inc.	IC SDRAM 8GBIT 1.2GHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x12)	패키지: 78-TFBGA	재고4,336	DRAM	SDRAM - DDR4	8Gb (1G x 8)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 105°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x12)
IS61C5128AS-25HLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 25NS 32STSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-sTSOP I	패키지: 32-LFSOP (0.465", 11.80mm Width)	재고2,128	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-LFSOP (0.465", 11.80mm Width)	32-sTSOP I
BR25L040FV-WE2	Rohm Semiconductor	IC EEPROM 4KBIT 5MHZ 8-SSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-SSOPB	패키지: 8-LSSOP (0.173", 4.40mm Width)	재고3,088	EEPROM	EEPROM	4Kb (512 x 8)	SPI	5MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-LSSOP (0.173", 4.40mm Width)	8-SSOPB
FT24C512A-ETR-B	Fremont Micro Devices USA	IC EEPROM 512KBIT 8TSSOP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,792	-	-	-	-	-	-	-	-	-	-	-	-
FT24C02A-UMR-B	Fremont Micro Devices USA	IC EEPROM 2KBIT 1MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고17,232	EEPROM	EEPROM	2Kb (256 x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
S29GL256P11FFIV20	Cypress Semiconductor Corp	IC FLASH 256MBIT 110NS 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	패키지: 64-LBGA	재고3,600	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
BR24A02FVM-WMTR	Rohm Semiconductor	EEPROM SERIAL-I2C 2K-BIT 256 X 8 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-MSOP	패키지: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)	재고4,976	EEPROM	EEPROM	2Kb (256 x 8)	I²C	400kHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 105°C (TA)	Surface Mount	8-VSSOP, 8-MSOP (0.110", 2.80mm Width)	8-MSOP
W25Q32BVTBJP TR	Winbond Electronics	IC FLASH MEMORY 32MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,864	-	-	-	-	-	-	-	-	-	-	-	-
CY15V104QN-20LPXC	Cypress Semiconductor Corp	IC FRAM 4MBIT 20MHZ 8GQFN Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,184	-	-	-	-	-	-	-	-	-	-	-	-
MX25V1606FZNI03	Macronix	MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 16Mbit Memory Interface: SPI - Dual I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 75µs, 4ms Access Time: 6 ns Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	16Mbit	SPI - Dual I/O	104 MHz	75µs, 4ms	6 ns	2.3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
CY62256VNLL-70SNC	Cypress Semiconductor Corp	IC SRAM 256KBIT PARALLEL 28SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	256Kbit	Parallel	-	70ns	70 ns	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
MT62F1536M32D4DS-023-FAAT-B	Micron Technology Inc.	LPDDR5 48G 1.5GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	48Gbit	Parallel	4.266 GHz	-	-	-	-	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
CY62187EV30LL-70BAXI	Cypress Semiconductor Corp	IC SRAM 64MBIT PARALLEL 48FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 2.2V ~ 3.7V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-FBGA (8x9.5)	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	64Mbit	Parallel	-	70ns	70 ns	2.2V ~ 3.7V	-40°C ~ 85°C (TA)	Surface Mount	48-LFBGA	48-FBGA (8x9.5)
MX25R6435FM2KL0	Macronix	MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 64Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 80 MHz Write Cycle Time - Word, Page: 100µs, 3.6ms Access Time: 8 ns Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	64Mbit	SPI - Quad I/O	80 MHz	100µs, 3.6ms	8 ns	1.65V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOP
M5M5256DVP-70GI-BE	Renesas Electronics Corporation	STANDARD SRAM, 32KX8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F256G08EBHBFJ4-3ITF-B	Micron Technology Inc.	IC FLASH 256GBIT PAR 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 256Gbit Memory Interface: Parallel Clock Frequency: 333 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 132-VBGA Supplier Device Package: 132-VBGA (12x18)	패키지: -	Request a Quote	FLASH	FLASH - NAND (TLC)	256Gbit	Parallel	333 MHz	-	-	2.5V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	132-VBGA	132-VBGA (12x18)
MT62F1536M64D8EK-023-AAT-B	Micron Technology Inc.	LPDDR5 96G 1.5GX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 96Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	96Gbit	Parallel	4.266 GHz	-	-	-	-40°C ~ 105°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
S25HS512TFABHM013	Infineon Technologies	IC FLASH 512MBIT SPI/QUAD 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	512Mbit	SPI - Quad I/O, QPI	166 MHz	-	-	1.7V ~ 2V	-40°C ~ 125°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
W25M02GWTBIG	Winbond Electronics	IC FLASH 2GBIT SPI/QUAD 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 700µs Access Time: 8 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (8x6)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	SPI - Quad I/O	104 MHz	700µs	8 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (8x6)

EDF8132A3PF-GD-F-D

Micron Technology Inc.

IC SDRAM 8GBIT 800MHZ 168FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,568

DRAM

SDRAM - Mobile LPDDR3

8Gb (256M x 32)

Parallel

800MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

IS45S32800D-6BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고3,776

DRAM

SDRAM

256Mb (32M x 8)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

IDT71V65602S100BG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고2,864

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS42S32400B-7BI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 90FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고7,008

DRAM

SDRAM

128Mb (4M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

MT48LC4M32LFB5-8 XT:G

Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 125MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -20°C ~ 75°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

재고5,264

DRAM

SDRAM - Mobile LPSDR

128Mb (4M x 32)

Parallel

125MHz

15ns

7ns

3 V ~ 3.6 V

-20°C ~ 75°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

PSD833F2-90M

STMicroelectronics

IC FLASH 1MBIT 90NS 52QFP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-QFP
Supplier Device Package: 52-PQFP (10x10)

패키지: 52-QFP

재고5,408

FLASH

1Mb (128K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-QFP

52-PQFP (10x10)

AT27LV520-90SC

Microchip Technology

IC OTP 512KBIT 90NS 20SOIC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SOIC

패키지: 20-SOIC (0.295", 7.50mm Width)

재고13,668

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

90ns

3 V ~ 3.6 V, 4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

20-SOIC (0.295", 7.50mm Width)

20-SOIC

70V3399S133BC

IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 133MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 2Mb (128K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고5,232

SRAM

SRAM - Dual Port, Synchronous

2Mb (128K x 18)

Parallel

133MHz

-

4.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

MT49H8M36SJ-TI:B TR

Micron Technology Inc.

IC RLDRAM 288MBIT 144FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (8M x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FBGA (18.5x11)

패키지: 144-TFBGA

재고4,064

DRAM

288Mb (8M x 36)

Parallel

-

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-FBGA (18.5x11)

MT40A1G8WE-083E AAT:B TR

Micron Technology Inc.

IC SDRAM 8GBIT 1.2GHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x12)

패키지: 78-TFBGA

재고4,336

DRAM

SDRAM - DDR4

8Gb (1G x 8)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

-40°C ~ 105°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x12)

IS61C5128AS-25HLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 25NS 32STSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP I

패키지: 32-LFSOP (0.465", 11.80mm Width)

재고2,128

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-LFSOP (0.465", 11.80mm Width)

32-sTSOP I

BR25L040FV-WE2

Rohm Semiconductor

IC EEPROM 4KBIT 5MHZ 8-SSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-SSOPB

패키지: 8-LSSOP (0.173", 4.40mm Width)

재고3,088

EEPROM

4Kb (512 x 8)

SPI

5MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-LSSOP (0.173", 4.40mm Width)

8-SSOPB

FT24C512A-ETR-B

Fremont Micro Devices USA

IC EEPROM 512KBIT 8TSSOP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,792

-

FT24C02A-UMR-B

Fremont Micro Devices USA

IC EEPROM 2KBIT 1MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고17,232

EEPROM

2Kb (256 x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

S29GL256P11FFIV20

Cypress Semiconductor Corp

IC FLASH 256MBIT 110NS 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

패키지: 64-LBGA

재고3,600

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

BR24A02FVM-WMTR

Rohm Semiconductor

EEPROM SERIAL-I2C 2K-BIT 256 X 8

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

재고4,976

EEPROM

2Kb (256 x 8)

I²C

400kHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 105°C (TA)

Surface Mount

8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

8-MSOP

W25Q32BVTBJP TR

Winbond Electronics

IC FLASH MEMORY 32MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,864

-

CY15V104QN-20LPXC

Cypress Semiconductor Corp

IC FRAM 4MBIT 20MHZ 8GQFN

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,184

-

MX25V1606FZNI03

Macronix

MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 16Mbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 75µs, 4ms
Access Time: 6 ns
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

16Mbit

SPI - Dual I/O

104 MHz

75µs, 4ms

6 ns

2.3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

CY62256VNLL-70SNC

Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 28SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

256Kbit

Parallel

-

70ns

70 ns

2.7V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

MT62F1536M32D4DS-023-FAAT-B

Micron Technology Inc.

LPDDR5 48G 1.5GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

48Gbit

Parallel

4.266 GHz

-

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

CY62187EV30LL-70BAXI

Cypress Semiconductor Corp

IC SRAM 64MBIT PARALLEL 48FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 2.2V ~ 3.7V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-FBGA (8x9.5)

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

64Mbit

Parallel

-

70ns

70 ns

2.2V ~ 3.7V

-40°C ~ 85°C (TA)

Surface Mount

48-LFBGA

48-FBGA (8x9.5)

MX25R6435FM2KL0

Macronix

MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 80 MHz
Write Cycle Time - Word, Page: 100µs, 3.6ms
Access Time: 8 ns
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

64Mbit

SPI - Quad I/O

80 MHz

100µs, 3.6ms

8 ns

1.65V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOP

M5M5256DVP-70GI-BE

Renesas Electronics Corporation

STANDARD SRAM, 32KX8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT29F256G08EBHBFJ4-3ITF-B

Micron Technology Inc.

IC FLASH 256GBIT PAR 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 256Gbit
Memory Interface: Parallel
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-VBGA
Supplier Device Package: 132-VBGA (12x18)

패키지: -

Request a Quote

FLASH

FLASH - NAND (TLC)

256Gbit

Parallel

333 MHz

-

2.5V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

132-VBGA

132-VBGA (12x18)

MT62F1536M64D8EK-023-AAT-B

Micron Technology Inc.

LPDDR5 96G 1.5GX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 96Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

96Gbit

Parallel

4.266 GHz

-

-40°C ~ 105°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

S25HS512TFABHM013

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

512Mbit

SPI - Quad I/O, QPI

166 MHz

-

1.7V ~ 2V

-40°C ~ 125°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

W25M02GWTBIG

Winbond Electronics

IC FLASH 2GBIT SPI/QUAD 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 700µs
Access Time: 8 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (8x6)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

2Gbit

SPI - Quad I/O

104 MHz

700µs

8 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (8x6)