페이지 2170 - 메모리 | 집적 회로(IC) | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-827
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

메모리

기록 62,144
페이지  2,170/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT41J64M16JT-15E AAT:G TR
Micron Technology Inc.

IC SDRAM 1GBIT 667MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (8x14)
패키지: 96-TFBGA
재고2,752
DRAM
SDRAM - DDR3
1Gb (64M x 16)
Parallel
667MHz
-
-
1.425 V ~ 1.575 V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
hot MT48H16M16LFBF-6 IT:H
Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x9)
패키지: 54-VFBGA
재고4,624
DRAM
SDRAM - Mobile LPSDR
256Mb (16M x 16)
Parallel
166MHz
15ns
5ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x9)
M25PX32-VMP6F TR
Micron Technology Inc.

IC FLASH 32MBIT 75MHZ 8VFDFPN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: 15ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VFQFPN (6x5)
패키지: 8-VDFN Exposed Pad
재고7,008
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI
75MHz
15ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-VFQFPN (6x5)
IDT71V3556S133BQI
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
패키지: 165-TBGA
재고4,992
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
133MHz
-
4.2ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
IDT71T016SA12BFI
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 48CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LFBGA
  • Supplier Device Package: 48-CABGA (7x7)
패키지: 48-LFBGA
재고7,136
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
48-LFBGA
48-CABGA (7x7)
IS45S32200E-7BLA1
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 143MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고6,976
DRAM
SDRAM
64Mb (2M x 32)
Parallel
143MHz
-
5.5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
AT49F002N-70JC
Microchip Technology

IC FLASH 2MBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고6,528
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
50µs
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT28C17E-15JI
Microchip Technology

IC EEPROM 16KBIT 150NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 200µs
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고4,320
EEPROM
EEPROM
16Kb (2K x 8)
Parallel
-
200µs
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
70V3319S133BF8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 208CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
패키지: 208-LFBGA
재고5,168
SRAM
SRAM - Dual Port, Synchronous
4.5Mb (256K x 18)
Parallel
133MHz
-
4.2ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
70V18L20PFI
IDT, Integrated Device Technology Inc

IC SRAM 576KBIT 20NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 576Kb (64K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고5,600
SRAM
SRAM - Dual Port, Asynchronous
576Kb (64K x 9)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
71V2556S150PFGI8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고7,680
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
AS7C4096A-20TINTR
Alliance Memory, Inc.

IC SRAM 4MBIT 20NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고7,456
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
SST39VF1682-70-4C-B3KE
Microchip Technology

IC FLASH 16MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
패키지: 48-TFBGA
재고7,168
FLASH
FLASH
16Mb (2M x 8)
Parallel
-
10µs
70ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
71V016SA20YG8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 44SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
패키지: 44-BSOJ (0.400", 10.16mm Width)
재고3,456
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
IS63LV1024-12KL
ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 32-SOJ
패키지: 32-BSOJ (0.400", 10.16mm Width)
재고5,008
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
32-BSOJ (0.400", 10.16mm Width)
32-SOJ
SST39VF040-70-4C-WHE-T
Microchip Technology

IC FLASH 4MBIT 70NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-TSOP
패키지: 32-TFSOP (0.488", 12.40mm Width)
재고4,896
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
20µs
70ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-TSOP
hot 24C02CT/ST
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 1.5ms
  • Access Time: 3500ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고27,456
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
1.5ms
3500ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
M24128-DRDW3TP/K
STMicroelectronics

IC EEPROM 128KBIT 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: 450ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고27,816
EEPROM
EEPROM
128Kb (16K x 8)
I2C
1MHz
4ms
450ns
1.8 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MT53D1G64D8NW-062 WT:D
Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA 8DP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,416
-
-
-
-
-
-
-
-
-
-
-
-
THGBMHT0C8LBAIG
Kioxia America, Inc.

IC FLASH 128GBIT EMMC 153WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gbit
  • Memory Interface: eMMC
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-WFBGA
  • Supplier Device Package: 153-WFBGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND
128Gbit
eMMC
200 MHz
-
-
2.7V ~ 3.6V
-25°C ~ 85°C (TA)
Surface Mount
153-WFBGA
153-WFBGA (11.5x13)
MT29GZ5A3BPGGA-046IT-87K-TR
Micron Technology Inc.

NAND MCP 6G

  • Memory Type: Non-Volatile, Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND (SLC), DRAM - LPDDR4
  • Memory Size: 4Gbit
  • Memory Interface: ONFI
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 30ns
  • Access Time: 25 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 149-WFBGA
  • Supplier Device Package: 149-WFBGA (8x9.5)
패키지: -
Request a Quote
FLASH, RAM
FLASH - NAND (SLC), DRAM - LPDDR4
4Gbit
ONFI
-
30ns
25 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
149-WFBGA
149-WFBGA (8x9.5)
BR25H010FVM-5ACTR
Rohm Semiconductor

1KBIT, SPI BUS, SERIAL EEPROM FO

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: 3.5ms
  • Access Time: 2 µs
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: 8-MSOP
패키지: -
Request a Quote
EEPROM
EEPROM
1Kbit
SPI
20 MHz
3.5ms
2 µs
1.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
8-MSOP
MX25U64356ZBI02
Macronix

MEMORY

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CAT93C56WI-GT3
onsemi

IC EEPROM 2KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 2 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
EEPROM
EEPROM
2Kbit
Microwire
2 MHz
-
-
1.8V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IMC1B1A8C2A2A1E3A8A0000
Intelligent Memory Ltd.

EMMC, 11.5X13 153 BALL, 64GB, -2

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 512Gbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-FBGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
512Gbit
eMMC_5.1
-
-
-
-
-25°C ~ 85°C (TA)
Surface Mount
153-VFBGA
153-FBGA (11.5x13)
CY7C1021CV26-15XEKJ
Cypress Semiconductor Corp

CY7C1021 - STANDARD SRAM, 64KX16

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
S26HL512TFPBHI000
Infineon Technologies

IC FLASH 512MBIT SPI 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: SPI
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
패키지: -
재고954
FLASH
FLASH - NOR
512Mbit
SPI
166 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-VBGA
24-FBGA (6x8)
W71NW20GF3FW
Winbond Electronics

IC FLASH RAM 2GBIT 400MHZ

  • Memory Type: Non-Volatile, Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, DRAM - LPDDR2
  • Memory Size: 2Gbit (NAND), 1Gbit (LPDDR2)
  • Memory Interface: -
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
FLASH, RAM
FLASH - NAND, DRAM - LPDDR2
2Gbit (NAND), 1Gbit (LPDDR2)
-
400 MHz
-
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
-
-
-