페이지 2173 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
W25Q256FVCIF TR
Winbond Electronics

IC FLASH 256MBIT 104MHZ 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
패키지: 24-TBGA
재고4,368
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI
104MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS49NLC96400-25BL
ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 400MHZ 144BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 576Mb (64M x 9)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-TFBGA
  • Supplier Device Package: 144-FCBGA (11x18.5)
패키지: 144-TFBGA
재고4,544
DRAM
DRAM
576Mb (64M x 9)
Parallel
400MHz
-
20ns
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
144-TFBGA
144-FCBGA (11x18.5)
MT46H8M16LFBF-5:K TR
Micron Technology Inc.

IC SDRAM 128MBIT 200MHZ 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-VFBGA
  • Supplier Device Package: 60-VFBGA (8x9)
패키지: 60-VFBGA
재고5,008
DRAM
SDRAM - Mobile LPDDR
128Mb (8M x 16)
Parallel
200MHz
15ns
5.0ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
60-VFBGA
60-VFBGA (8x9)
IDT71V3557S75BQ
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 7.5NS 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
패키지: 165-TBGA
재고4,064
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
-
-
7.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
hot NAND128W3A0BN6E
Micron Technology Inc.

IC FLASH 128MBIT 50NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50ns
  • Access Time: 50ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고49,992
FLASH
FLASH - NAND
128Mb (16M x 8)
Parallel
-
50ns
50ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
AT27C020-90TU
Microchip Technology

IC OTP 2MBIT 90NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
패키지: 32-TFSOP (0.724", 18.40mm Width)
재고7,728
EPROM
EPROM - OTP
2Mb (256K x 8)
Parallel
-
-
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
AT24C16AN-10SU-1.8-T
Microchip Technology

IC EEPROM 16KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 4.5µs
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,688
EEPROM
EEPROM
16Kb (2K x 8)
I2C
400kHz
5ms
4.5µs
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DS1230W-150
Maxim Integrated

IC NVSRAM 256KBIT 150NS 28EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 28-EDIP
패키지: 28-DIP Module (0.600", 15.24mm)
재고7,328
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
150ns
150ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Through Hole
28-DIP Module (0.600", 15.24mm)
28-EDIP
AT49BV002T-12JC
Microchip Technology

IC FLASH 2MBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 120ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고6,944
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
50µs
120ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT28C256E-25UM/883-815
Microchip Technology

IC EEPROM 256KBIT 250NS 28PIN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 250ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 28-BCPGA
  • Supplier Device Package: 28-CPGA (13.55x15.06)
패키지: 28-BCPGA
재고2,832
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
250ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TC)
Through Hole
28-BCPGA
28-CPGA (13.55x15.06)
70V06S25PF
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 25NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: 64-LQFP
재고3,072
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
25ns
25ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
71V65603S100BQI
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
패키지: 165-TBGA
재고6,848
SRAM
SRAM - Synchronous ZBT
9Mb (256K x 36)
Parallel
100MHz
-
5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
EMF8132A3MA-DV-F-D
Micron Technology Inc.

LPDDR3 SPECIAL/CUSTOM PLASTIC GR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,192
-
-
-
-
-
-
-
-
-
-
-
-
IS43DR16320D-25DBI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 400MHZ 84BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-TWBGA (8x12.5)
패키지: 84-TFBGA
재고4,992
DRAM
SDRAM - DDR2
512Mb (32M x 16)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
84-TFBGA
84-TWBGA (8x12.5)
MT48LC16M16A2P-7E IT:G TR
Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고5,360
DRAM
SDRAM
256Mb (16M x 16)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
W25Q32FWZPIG
Winbond Electronics

IC FLASH 32MBIT 104MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
패키지: 8-WDFN Exposed Pad
재고4,896
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI
104MHz
5ms
-
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
AT25DF256-MAHNGU-T
Adesto Technologies

IC FLASH 256KBIT 85MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 8µs, 2.5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
패키지: 8-UFDFN Exposed Pad
재고6,032
FLASH
FLASH
256Kb (32K x 8)
SPI
104MHz
8µs, 2.5ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
93AA56AT-I/SN
Microchip Technology

IC EEPROM 2KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,736
EEPROM
EEPROM
2Kb (256 x 8)
SPI
2MHz
6ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot AT24C64D-SSHM-B
Microchip Technology

IC EEPROM 64KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,048
EEPROM
EEPROM
64Kb (8K x 8)
I2C
1MHz
5ms
550ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SST38VF6403B-70I/CD
Microchip Technology

IC FLASH 64MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
패키지: 48-TFBGA
재고10,236
FLASH
FLASH
64Mb (4M x 16)
Parallel
-
10µs
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
MX25L6439EMBI-10G
Macronix

IC FLASH 64MBIT

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 50µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-VSOP
패키지: 8-SOIC (0.209", 5.30mm Width)
재고2,256
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI
104MHz
50µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-VSOP
IS43DR81280C-3DBI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TWBGA (8x10.5)
패키지: 60-TFBGA
재고7,504
DRAM
SDRAM - DDR2
1Gb (128M x 8)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TWBGA (8x10.5)
IS43DR81280B-25EBL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 60TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TWBGA (8x10.5)
패키지: 60-TFBGA
재고5,040
DRAM
SDRAM - DDR2
1Gb (128M x 8)
Parallel
400MHz
15ns
450ps
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TWBGA (8x10.5)
R1EV5801MBSDRDI-B0
Renesas Electronics Corporation

IC EEPROM 1MBIT PARALLEL 32SOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 150 ns
  • Voltage - Supply: 2.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.445", 11.30mm Width)
  • Supplier Device Package: 32-SOP
패키지: -
Request a Quote
EEPROM
EEPROM
1Mbit
Parallel
-
10ms
150 ns
2.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.445", 11.30mm Width)
32-SOP
W25R128JVSIQ-TR
Winbond Electronics

IC FLASH 128MBIT SPI/QUAD 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
재고11,967
FLASH
FLASH - NOR
128Mbit
SPI - Quad I/O
104 MHz
3ms
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
W25Q16JVZPSM
Winbond Electronics

IC FLASH 16MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
패키지: -
Request a Quote
FLASH
FLASH - NOR
16Mbit
SPI - Quad I/O
133 MHz
3ms
6 ns
2.7V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
MT53E768M32D4DT-046-AUT-E-TR
Micron Technology Inc.

IC DRAM 24GBIT 2.133GHZ FBGA QDP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 24Gbit
  • Memory Interface: -
  • Clock Frequency: 2.133 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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DRAM
SDRAM - Mobile LPDDR4
24Gbit
-
2.133 GHz
-
-
1.1V
-40°C ~ 125°C (TC)
-
-
-
FEMC032G-M10
Flexxon Pte Ltd

IC FLSH 256GBIT EMMC 5.1 153FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 256Gbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-FBGA (11.5x13)
패키지: -
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FLASH
FLASH - NAND (TLC)
256Gbit
eMMC_5.1
200 MHz
-
-
2.7V ~ 3.6V
-25°C ~ 85°C
Surface Mount
153-VFBGA
153-FBGA (11.5x13)