페이지 362 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SST39VF040-70-4C-B3KE
Microchip Technology

IC FLASH 4MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
패키지: 48-TFBGA
재고4,800
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
20µs
70ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
hot M25P40-VMP6
STMicroelectronics

IC FLASH 4MBIT 40MHZ 8VFDFPN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 50MHz
  • Write Cycle Time - Word, Page: 5ms, 15ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VFDFPN (6x5)
패키지: 8-VDFN Exposed Pad
재고9,926,208
FLASH
FLASH - NOR
4Mb (512K x 8)
SPI
50MHz
5ms, 15ms
-
2.3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-VFDFPN (6x5)
AT93C57-10SC
Microchip Technology

IC EEPROM 2KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8, 128 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,960
EEPROM
EEPROM
2Kb (256 x 8, 128 x 16)
SPI
2MHz
10ms
-
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
CY7C1420KV18-250BZCT
Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: 165-LBGA
재고3,472
SRAM
SRAM - Synchronous, DDR II
36Mb (1M x 36)
Parallel
250MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
709359L6PF8
IDT, Integrated Device Technology Inc

IC SRAM 144KBIT 6.5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 144Kb (8K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.5ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고7,920
SRAM
SRAM - Dual Port, Synchronous
144Kb (8K x 18)
Parallel
-
-
6.5ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
70V06L35PF8
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 35NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: 64-LQFP
재고5,024
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
35ns
35ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
IS46TR16128CL-125KBLA1-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: 96-TFBGA
재고3,120
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
800MHz
15ns
20ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
CY14E256Q5A-SXQT
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 40MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,200
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
SPI
40MHz
-
-
4.5 V ~ 5.5 V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IS43TR81280B-125JBLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 800MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (8x10.5)
패키지: 78-TFBGA
재고5,120
DRAM
SDRAM - DDR3
1Gb (128M x 8)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (8x10.5)
CG8275AAT
Cypress Semiconductor Corp

IC MEMORY F-RAM PAR 28SOIC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,128
-
-
-
-
-
-
-
-
-
-
-
-
11AA080T-I/SN
Microchip Technology

IC EEPROM 8KBIT 100KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: Single Wire
  • Clock Frequency: 100kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,128
EEPROM
EEPROM
8Kb (1K x 8)
Single Wire
100kHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SFEM4096B1EA1TO-I-GE-111-STD1
Swissbit

INDUSTRIAL EMBEDDED MMC, EM-20,

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,960
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
400MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C
-
-
-
S-93C46BD0I-K8T3U
SII Semiconductor Corporation

EEPROM

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (64 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 8ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: 8-TMSOP
패키지: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
재고5,248
EEPROM
EEPROM
1Kb (64 x 16)
SPI
2MHz
8ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
8-TMSOP
hot CY14B256LA-SP45XI
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 45NS 48SSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: 48-SSOP
패키지: 48-BSSOP (0.295", 7.50mm Width)
재고28,920
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
45ns
45ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-BSSOP (0.295", 7.50mm Width)
48-SSOP
AT28HC256-70JU-T
Microchip Technology

70NS, PLCC, IND TEMP, GREEN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고16,428
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
10ms
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
24LC04B-I/S15K
Microchip Technology

IC EEPROM 4K I2C 400KHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 8 x 2)
  • Memory Interface: I²C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고7,888
EEPROM
EEPROM
4Kb (256 x 8 x 2)
I²C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
Die
Die
S29VS256RABBHW000
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 44FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 80ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-VFBGA
  • Supplier Device Package: 44-FBGA (7.5x5)
패키지: 44-VFBGA
재고7,488
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
108MHz
60ns
80ns
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
Surface Mount
44-VFBGA
44-FBGA (7.5x5)
S25FL128LDPMFI003
Cypress Semiconductor Corp

IC 128 MB FLASH MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.295", 7.50mm Width)
재고3,104
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O, QPI
66MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
MT53D384M16D1NP-046 XT ES:D
Micron Technology Inc.

LPDDR4 6G 384MX16 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,992
-
-
-
-
-
-
-
-
-
-
-
-
71V321S55PFI
IDT, Integrated Device Technology Inc

IC SRAM 16K PARALLEL 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: 64-LQFP
재고3,488
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
55ns
55ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
MT29F128G08CBCEBJ4-37ITR:E TR
Micron Technology Inc.

IC FLASH NAND 128G PAR VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,728
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
267MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
-
-
IS43TR16128D-125KBLI
ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: 96-TFBGA
재고4,800
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
800MHz
15ns
20ns
1.425V ~ 1.575V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
W66BP6NBUAFJ-TR
Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
2Gbit
LVSTL_11
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
IMC1B1A3C3A9A5I3A3A0000
Intelligent Memory Ltd.

EMMC, 11.5X13 153 BALL, 4GB, -40

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 32Gbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-FBGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
32Gbit
eMMC_5.1
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
153-VFBGA
153-FBGA (11.5x13)
W77Q32JWSFIO-TR
Winbond Electronics

IC FLASH 32MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
Request a Quote
FLASH
FLASH
32Mbit
SPI - Quad I/O, QPI
104 MHz
-
-
1.7V ~ 1.95V
-40°C ~ 85°C
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
AM29LV116DT-90EI
Advanced Micro Devices

IC FLASH 16MBIT PARALLEL 40TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - Boot Block
  • Memory Size: 16Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 40-TSOP
패키지: -
Request a Quote
FLASH
FLASH - Boot Block
16Mbit
Parallel
-
90ns
90 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
40-TFSOP (0.724", 18.40mm Width)
40-TSOP
W74M00AVSNIG-TR
Winbond Electronics

IC FLASH 80MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: 80 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
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FLASH
FLASH - NAND
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80 MHz
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2.7V ~ 3.6V
-40°C ~ 85°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
UPD44165182BF5-E33-EQ3
Renesas Electronics Corporation

QDR SRAM, 1MX18, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
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